1

Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

11th Workshop on Electronics for LHC and Future Experiments

12. - 16. 9. 2005, Heidelberg

2Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Themenschwerpunkte

•LHC Maschienenstatus•Mikroelektronik, Strahlenhärte•Triggersysteme der LHC-Experimente•Massenproduktion / Test der

Elektronikkomponenten•Pixeldetektoren•Spannungsversorgung

3Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Schwerpunkt Mikroelektronik

•Migration zu 0,13 µm• AMS: MOS Transistor Modelling

• Massimo Manghisoni: Untersuchungen an 0,13 µm CMOS Strukturen

•Neue Chips• Hugo Furtado: Delay25

• Frederico Faccio: Strahlungstoleranter LD Spannungsregler

•Microtelectronic Workgroup Meeting

4Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Ehrenfried Seebacher (AMS)

CMOS Transistor Modelling

•Für moderne CMOS-Prozesse werden immer genauere Transistormodelle erforderlich

•BSIM3 bis 0,18 µm State of the art•< 0,18 µm: Weitere Effekte spielen immer

größere Rolle•Gate channel Leakage•Short channel Effect

•Daher ab 0,13 µm CMOS BSIM4

5Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Massimo Manghisoni (CERN)

0.13 um CMOS technologies for analog front-end

circuits in LHC detector upgrades

•Untersuchung am 0,13 µm CMOS Prozess von STMicroelectronics

•Besonderes Gewicht auf Rauscheigenschaften und Strahlungseffekte

6Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Massimo Manghisoni (CERN)

0.13 um CMOS technologies for analog front-end circuits in LHC detector upgrades

7Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

ü Characteristics unaffected for VGS ³ VT (very small threshold voltage shift)

ü Radiation-induced changes are apparent in the constant leakage current zone for both devices

ü increase in the subthreshold region in NMOS (edge effects due to radiation-induced charge at the STI oxide). Effect larger in devices with a shorter channel

Massimo Manghisoni (CERN)

0.13 um CMOS technologies for analog front-end circuits in LHC detector upgrades

8Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Hugo Furtado (CERN)

Delay25

•Programmierbare, 4-Kanal-CMOS Delayline•Strahlungstolerant und Selbstkalibrierend•Clocksignal als Zeitreferenz•Zeitauflösung 0,5 ns

9Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Hugo Furtado (CERN)

Delay25

DLL zur Selbstkalibration

Kan

äle

1 -

4

10Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Frederico Faccio (CERN)

A radiation-tolerant LDO voltage regulator for HEP

applications

•Motivation• Power distribution in LHC experiments is a real challenge• Need for voltage regulation close to the electronics to be powered:

linear regulators are often used• To limit (useless) power dissipation, LDO regulators are desired,

having drop-out voltages as low as 100-150mV• Rad-hard regulators with these characteristics are prohibitively

expensive• A rad-hard LDO regulator with limited current capability (300mA) can

be developed as an ASIC using “our” quarter micron CMOS process at low cost!

11Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Min Typ Max Comment

Output V (V) 2.5 Fixed in this version

Input V (V) 2.65 2.7 3.5

Output I (mA) 0 250 300

Dropout V (mV) 150 At 300mA current

Quiescent I (mA) 1

Over-V prot. (V) 3.5 Protects regulator itself

Over-I prot. (mA) 400 600 Switch to current regulation

Over-T prot. (oC) 150 170

Disable in/out yes Possible to disable, output flag

Frederico Faccio (CERN)

A radiation-tolerant LDO voltage regulator for HEP

applications

12Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

offOver-Vmonitor

Over-Tmonitor

Switchesfor disable

Over-Imonitor

Error amplifier

R1

R2

Bandgap

Vin Vout

Gnd

Disable in

Disable flag

Frederico Faccio (CERN)

A radiation-tolerant LDO voltage regulator for HEP

applications

13Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Frederico Faccio (CERN)

A radiation-tolerant LDO voltage regulator for HEP

applications

14Holger Flemming, GSI, EE

DVEE-Palaver, 15.11.2005

Alesandro Marchioro (CERN)

Microelectronic Workgroup meeting

•CERN lässt Vertrag mit IBM über 0,25 µm CMOS ASIC Produktion auslaufen

•Derzeit werden 0,13 µm Prozesse von verschiedenen Herstellern evaluiert

•Es wird diskutiert, ob wieder eine Strahlenharte Digitalbibliothek erstellt wird

•Bündelung der Kräfte ?