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HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014o
HV-CMOS Hybridization
G. Darbo – INFN / GenovaFuture Pixel Chip Design – Vidyo 18 Mar 2014
On Behalf of Genova ATLAS Pixel& Genova Low Temperature Detector (LTD) Lab
Indico agenda:https://indico.cern.ch/event/289724/
HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 2
How to Glue HV2FEI4 to FE-I4Requirements:
• Thin uniform dielectric layer (5 µm?) • Precise alignment of the two chips (bumps are 18µm diameter and minimum
50µm pitch on FE-I4 side)
Issues on “glue & press”• Difficult to keep parallelism• Difficult to keep calibrated spacing
(~impossible once HV-CMOS reachesfull size)
• How to align chips in XY (if capacitors are not cantered cross-talk)
FE-I4 CHIP
FE-I4 CHIP
HV2FEI4Apply pressure
Deposit Glue
HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 3
CCPD HV-CMOS - HybridizationHow to improve – process steps:• Use spacers: patterned photoresist pillars on FE-I4• Spin SU-8 photoresist (rad-hard) on FE-I4 to desired
thickness • Use mask for making pillars and clean rest of the surface• Apply glue (or SU-8 again) to have a thin layer• Apply pressure until pillars are in contact with HV2FEI4• Test done – see talk at 9th Trento WS by M. Biasotti:
http://indico.cern.ch/event/273880/session/5/contribution/68/material/slides/0.pdf
The tiny HV2FEI4p1 prototype glued on the large FE-I4
HV2FEI42.2 × 4.4 mm2
60 columns × 24rows
FE-I4
R/O CHIP
R/O CHIP
Spin SU-8 photoresistPattern pillars by mask
Glue deposition
R/O CHIPDETECTOR CHIPAlign & pressure
Pillar 1 5.92
Pillar 2 6.07
Pillar 3 5.92
Pillar 4 5.92
2x2 pillar height test: - distance 4 mm - height in µm
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HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 4
How Genova May Contribute to CCPD Hybridization
Genova has expertise and instruments• >20 years development of pixel detectors (ATLAS) and
low temperature detectors (LTD)• Process on dies (not full wafer)• We may consider to do more than gluing – look at the
combined facilities at the same department floor!
Collaboration between • ATLAS Pixel Lab (APL)• Low Temperature Detector (LTD)
Genova Lab (see next slides)
ATLAS Pixel Lab (Genova) – APL
KLA-TENCOR P7 stylus profilerScan length: 150mm - 6” waferRepeatability/reproducibility: 4/15 ÅVertical resolution: 0.01/0.60 Å
Manual flip-chip machine
HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 5
Micro-fabrication and Thin Film Facility - Genoa LTD Lab
Class1000-CR for lithography
PLD film deposition
Laser shot for Ir, W, Re deposition
TES on SiN membrane
Thin Film Growth Systems2 E-guns 4 material each @ 10-9 mbar
2 AC & 1 DC Magnetron Sputtering Systems
Pulsed Laser Deposition System @ 10-10 mbar
Micro-fabricationReactive Ion Etching, Plasma & Wet etching
2 Mask Aligners, Oxygen Plasma & Ion Beam
Critical Point Dryer
HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 6
Bolometer for 145 GHz-Back etched and spiderweb shaped SiN membrane
on Si wfr
250 µm
10 µm
Cryogenic Silicon Ballistic Phonon detector for GeV cosmic protons for L2
orbit payload
5 µm
Micro-fabrication and Thin Film Facility - Genoa LTD Lab
HV-CMOS – FE-I4 HybridizationG. Darbo – INFN / Genova 18 March 2014 7
Next StepsTry pillars technique on full size 2x2 cm2
• Glue face-to-face FE-I4 to FE-I4• Deposit SU-8 on FE-I4, mask off and leave columns, measure height• Glue and align second FE-I4 using manual flip-chip machine• Make sections and measure thickness
Then…• … proceed with functional components