7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 1/13

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 2/13

IKA15N60TTrenchStop Series q

Power Semiconductors 2 Rev. 2.1 July 06

®

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

CharacteristicIGBT thermal resistance,

junction – case

R t h J C 4.2

Diode thermal resistance,

junction – case

R t h J C D 4.8

Thermal resistance,

junction – ambient

R t h J A 80

K/W

Electrical Characteristic, at T j = 25 °C, unless otherwise specified

ValueParameter Symbol Conditions

min. Typ. max.Unit

Static Characteristic

Collector-emitter breakdown voltage V ( B R ) C E S V G E =0V, I C =0 .2mA 600 - -

Collector-emitter saturation voltage V C E ( s a t ) V G E = 15V, I C =15A

T j =25 ° C

T j =175 ° C

-

-

1.5

1.9

2.05

-

Diode forward voltage V F V G E =0V, I F =15A

T j =25 ° C

T j =175 ° C

-

-

1.65

1.6

2.05

-

Gate-emitter threshold voltage V G E ( t h ) I C =210µA, V C E = V G E 4.1 4.9 5.7

V

Zero gate voltage collector current I C E S V C E =600V ,V G E =0V

T j =25 ° C

T j =175 ° C -

-

-

-

40

1000

µA

Gate-emitter leakage current I G E S V C E =0V, V G E =20V - - 100 nA

Transconductance g f s V C E =20V, I C =15A - 8.7 - S

Integrated gate resistor R G i n t - Ω

Dynamic CharacteristicInput capacitance C i s s - 860 -

Output capacitance C o s s - 55 -

Reverse transfer capacitance C r s s

V C E =25V,

V G E =0V,

f =1MHz - 24 -

pF

Gate charge Q G a t e V C C =480V, I C =15A

V G E =15V

- 87 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE - 7 - nH

Short circuit collector current 1) I C ( S C ) V G E =15V, t S C ≤ 5 µ sV C C = 400V,T j ≤ 150 ° C

- 137.5 - A

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 3/13

IKA15N60TTrenchStop Series q

Power Semiconductors 3 Rev. 2.1 July 06

®

Switching Characteristic, Inductive Load, at T j=25 °C

ValueParameter Symbol Conditions min. Typ. max. Unit

IGBT Characteristic

Turn-on delay time t d ( o n ) - 17 -

Rise time t r - 11 -

Turn-off delay time t d ( o f f ) - 188 -

Fall time t f - 50 -

ns

Turn-on energy E o n - 0.22 -

Turn-off energy E o f f - 0.35 -

Total switching energy E t s

T j =25 ° C, V C C =400V, I C =15A,V G E =0 /15V,R G =15 Ω , L σ

1 ) =154nH,C σ

1 ) =39pFEnergy losses include“tail” and diodereverse recovery. - 0.57 -

mJ

Anti-Parallel Diode CharacteristicDiode reverse recovery time t r r - 34 - ns

Diode reverse recovery charge Q r r - 0.24 - µC

Diode peak reverse recovery current I r r m - 10.4 - A

Diode peak rate of fall of reverserecovery current during t b

d i r r /d t

T j =25 ° C,

V R =400V, I F =15A,

d i F / d t =825A/ µ s

- 718 - A/µs

Switching Characteristic, Inductive Load, at T j=175 °C

ValueParameter Symbol Conditions

min. Typ. max.

Unit

IGBT Characteristic

Turn-on delay time t d ( o n ) - 17 -

Rise time t r - 15 -

Turn-off delay time t d ( o f f ) - 212 -

Fall time t f - 79 -

ns

Turn-on energy E o n - 0.34 -

Turn-off energy E o f f - 0.47 -

Total switching energy E t s

T j =175 ° C, V C C =400V, I C =15A,V G E =0/15V,R G = 15 Ω L σ

1 ) =154nH,C σ

1 ) =39pFEnergy losses include“tail” and diodereverse recovery. - 0.81 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time t r r - 140 - ns

Diode reverse recovery charge Q r r - 1.0 - µC

Diode peak reverse recovery current I r r m - 14.7 - A

Diode peak rate of fall of reverserecovery current during t b

d i r r /d t

T j =175 ° C

V R =400V, I F =15A,

d i F / d t =825A/ µ s

- 495 - A/µs

1) Leakage inductance L σ and Stray capacity C σ due to dynamic test circuit in Figure E.

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 4/13

IKA15N60TTrenchStop Series q

Power Semiconductors 4 Rev. 2.1 July 06

®

I C , C

O L L E C T O R C U R R E N T

10Hz 100Hz 1kHz 10kHz 100kHz0A

10A

20A

30A

T C=110°C

T C=80°C

I C , C

O L L E C T O R C U R R E N T

1V 10V 100V 1000V

0.1A

1A

10A 10µs

50µs

1ms

DC

t p=2µs

10ms

f , SWITCHING FREQUENCY V CE , COLLECTOR -EMITTER VOLTAGE Figure 1. Collector current as a function of

switching frequency(T j ≤ 175 °C, D = 0.5, V CE = 400V,V GE = 0/+15V, R G = 15 Ω)

Figure 2. Safe operating area(D = 0, T C = 25 °C, T j ≤175 °C;V GE =15V)

P t o t , P

O W E R D I S S I P A T I O N

25°C 50°C 75°C 100°C 125°C 150°C0W

5W

10W

15W

20W

25W

30W

35W

I C , C O

L L E C T O R C U R R E N T

25°C 75°C 125°C0A

5A

10A

T C, CASE TEMPERATURE T C, CASE TEMPERATURE Figure 3. Power dissipation as a function of

case temperature(T j ≤ 175 °C)

Figure 4. Collector current as a function of case temperature(V GE ≥ 15V, T j ≤ 175 °C)

I c

I c

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 5/13

IKA15N60TTrenchStop Series q

Power Semiconductors 5 Rev. 2.1 July 06

®

I C , C

O L L E C T O R C U R R E N T

0V 1V 2V 3V0A

5A

10 A

15 A

20 A

25 A

30 A

35 A

40 A

15 V

7V

9V

11 V

13 V

V GE =20V

I C , C

O L L E C T O R C U R R E N T

0V 1V 2V 3V0A

5A

10 A

15 A

20 A

25 A

30 A

35 A

40 A

15 V

7V

9V

11 V

13 V

V GE =20V

V CE , COLLECTOR -EMITTER VOLTAGE V CE , COLLECTOR -EMITTER VOLTAGE Figure 5. Typical output characteristic

(T j = 25°C)Figure 6. Typical output characteristic

(T j = 175°C)

I C , C O

L L E C T O R C U R R E N T

0V 2V 4V 6V 8V0A

5A

10A

15A

20A

25A

30A

35A

25°C

T J =175°C

V C E ( s a t ) ,

C O L L E C T O R - E M I T T S A T U R A T I O N V O L T A G E

0°C 50°C 100°C 150°C0.0V

0.5V

1.0V

1.5V

2.0V

2.5V

I C =15A

I C =30A

I C =7.5A

V GE , GATE-EMITTER VOLTAGE T J , JUNCTION TEMPERATURE Figure 7. Typical transfer characteristic

(VCE =20V) Figure 8. Typical collector-emitter

saturation voltage as a function of junction temperature(V GE = 15V)

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 6/13

IKA15N60TTrenchStop Series q

Power Semiconductors 6 Rev. 2.1 July 06

®

t , S W I T C H I N G T I M E S

0A 5A 10A 15A 20A 25A

1n s

10ns

100ns

t r

t d(on)

t f

t d(off)

t , S W I T C H I N G T I M E S

10Ω 20Ω 30Ω 40Ω 50Ω10ns

100ns

t r

t d(on)

t f

t d(off)

I C , COLLECTOR CURRENT R G, GATE RESISTOR Figure 9. Typical switching times as a

function of collector current(inductive load, T J=175°C,V CE = 400V, V GE = 0/15V, R G = 15 ,Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 15A,Dynamic test circuit in Figure E)

t , S W I T C H I N G T I M E S

25°C 50°C 75°C 100°C 125°C 150°C

10ns

100ns

t r

t d(on)

t f

t d(off)

V G E ( t h ) ,

G A T E - E M I T T T R S H O L D V O L T A G E

-50°C 0°C 50°C 100°C 150°C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.max.

T J , JUNCTION TEMPERATURE T J , JUNCTION TEMPERATURE Figure 11. Typical switching times as a

function of junction temperature(inductive load, V CE = 400V,VGE = 0/15V, I C = 15A, R G=15 ,Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature (I C = 0.21mA)

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 7/13

IKA15N60TTrenchStop Series q

Power Semiconductors 7 Rev. 2.1 July 06

®

E , S

W I T C H I N G E N E R G Y L O S S E S

0A 5A 10A 15A 20A 25A0.0mJ

0.4mJ

0.8mJ

1.2mJ

1.6mJ

E ts *

E off

*) E on an d E ts include losses

due to diode recovery

E on *

E , S

W I T C H I N G E N E R G Y L O S S E S

0Ω 10Ω 20Ω 30Ω 40Ω 50Ω 60Ω 70Ω 80Ω0.2 mJ

0.4 mJ

0.6 mJ

0.8 mJ

1.0 mJ

1.2 mJ

1.4 mJ

1.6 mJ

E ts *

E on *

*) E on and E ts include losses

due to diode recovery

E off

I C , COLLECTOR CURRENT R G, GATE RESISTOR Figure 13. Typical switching energy losses

as a function of collector current(inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, R G = 15 ,Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor (inductive load, T J = 175°C,V CE = 400V, V GE = 0/15V, I C = 15A,Dynamic test circuit in Figure E)

E , S

W I T C

H I N G E N E R G Y L O S S E S

25°C 50°C 75°C 100°C 125°C 150°C0.2mJ

0.3mJ

0.4mJ

0.5mJ

0.6mJ

0.7mJ

0.8mJ

. m

E ts *

E on *

*) E on an d E ts include losses

due to diode recovery

E off

E , S

W I T C

H I N G E N E R G Y L O S S E S

300V 350V 400V 450V0.0mJ

0.2mJ

0.4mJ

0.6mJ

0.8mJ

1.0mJ

. m

E ts *

E on *

*) E on and E ts include losses

due to diode recovery

E off

T J , JUNCTION TEMPERATURE V CE , COLLECTOR -EMITTER VOLTAGE Figure 15. Typical switching energy losses

as a function of junctiontemperature(inductive load, V CE = 400V,VGE = 0/15V, I C = 15A, R G = 15 ,Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emitter voltage(inductive load, T J = 175°C,V GE = 0/15V, I C = 15A, R G = 15 ,Dynamic test circuit in Figure E)

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 8/13

IKA15N60TTrenchStop Series q

Power Semiconductors 8 Rev. 2.1 July 06

®

V G E , G

A T E - E M I T T E R V O L T A G E

0nC 20nC 40nC 60nC 80nC 100nC0V

5V

10V

15V

480V

120V

c , C A P A C I T A N C E

0V 10V 20V 30V 40V 50V10pF

100pF

1n F

C rss

C oss

C iss

Q GE , GATE CHARGE V CE , COLLECTOR -EMITTER VOLTAGE Figure 17. Typical gate charge

(I C=15 A)Figure 18. Typical capacitance as a function

of collector-emitter voltage(V GE =0V, f = 1 MHz)

I C ( s c ) , s h o r t c

i r c u i t C O L L E C T O R C U R R E N T

12V 14V 16V 18V0A

50 A

100A

150A

200A

t S C , S

H O R T C I R C U I T W I T H S T A N D T I M E

10V 11V 12V 13V 14V0µ s

2µ s

4µ s

6µ s

8µ s

10µs

12µs

V GE , GATE -EMITTETR VOLTAGE V GE , GATE -EMITETR VOLTAGE Figure 19. Typical short circuit collector

current as a function of gate-emitter voltage(V CE ≤ 400V, T j ≤ 150 °C)

Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(V CE =600V , start at T J=25°C,T Jmax <150°C)

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 9/13

IKA15N60TTrenchStop Series q

Power Semiconductors 9 Rev. 2.1 July 06

®

Z t h J C

, T R A N S I E N T T H E R M A L R E S I S T A N C E

10µs 100µs 1ms 10ms 100ms 1s 10s

10 -1K/W

10 0K/W

single pulse0.01

0.020.05

0.1

0.2

D=0.5

Z t h J C

, T R A N S I E N T T H E R M A L R E S I S T A N C E

10µs 100µs 1ms 10ms 100ms 1s 10s10 -2K/W

10 -1K/W

10 0K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

t P , PULSE WIDTH t P , PULSE WIDTH Figure 21. IGBT transient thermal resistance

(D = t p / T ) Figure 22. Diode transient thermal

impedance as a function of pulsewidth(D=t P /T )

t r r , R

E V E R S E R E C O V E R Y T I M E

400A/µs 600A/µs 800A/µs0ns

40ns

80ns

120ns

160ns

200ns

T J =25°C

T J=175°C

Q r r ,

R E V E R S E R E C O V E R Y C H A R G E

400A/µs 600A/µs 800A/µs0.0µC

0.2µC

0.4µC

0.6µC

0.8µC

1.0µC

T J =25°C

T J =175°C

di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE Figure 23. Typical reverse recovery time as

a function of diode current slope(V R=400V, I F=15A,Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope(V R = 400V, I F = 15A,Dynamic test circuit in Figure E)

R , ( K / W ) τ , ( s ) 1.7757 1.11*10 -1 1.4115 2.552*10 -2

0.5014 3.914*10 -3 0.3862 4.92*10 -4 0.445 7.19*10 -5 0.3188 7.4*10 -6

C 1 = τ 1 /R 1

R 1 R 2

C 2 = τ 2 /R 2

R , ( K / W ) τ , ( s ) 1.634 4.131.541 1.00

0.423 3.83*10 -2 0.223 3.26*10 -3 0.236 4.82*10 -4 0.122 6.64*10 -5

C 1 = τ 1 /R 1

R 1 R 2

C 2 = τ 2 /R 2

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 10/13

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 11/13

IKA15N60TTrenchStop Series q

Power Semiconductors 11 Rev. 2.1 July 06

®

Please refer to mounting instructions

PG-TO220-3-31

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 12/13

7/27/2019 IKA15N60T Data Sheets

http://slidepdf.com/reader/full/ika15n60t-data-sheets 13/13

IKA15N60TTrenchStop Series q ®

Edition 2006-01

Published byInfineon Technologies AG81726 München, Germany

© Infineon Technologies AG 7/10/06.All Rights Reserved.

Attention please!

The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typicalvalues stated herein and/or any information regarding the application of the device, Infineon Technologieshereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearestInfineon Technologies Office ( www.infineon.com ).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the typesin question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the expresswritten approval of Infineon Technologies, if a failure of such components can reasonably be expected tocause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to supportand/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the healthof the user or other persons may be endangered.