Image Sensor Pixel Cross-Sectional Analysis

2Image Sensor Die Utilization Analysis

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EXM-1234-000JMRF

Revision: 1.0 Published: February 28, 2011

3Image Sensor Die Utilization Analysis

Table of Contents (all modules)

Module 1: Overview– Introduction, Device Summary, Product Teardown, Die Photograph, Die Features

Module 2: Die Utilization, Basic Functional Analysis– Annotated Metal 1 Die Photograph, Die Utilization Analysis, Standard Logic Cell Size, SRAM Cell Size

Module 3: Planar Pixel Analysis– Pixel Design Summary, Pixel Schematic, Pixel Bevel SEM Analyses, Related Horizontal Pixel Dimensions

Module 4: Pixel Cross-Sectional Analysis– Pixel Process Summary, Pixel Horizontal and Vertical Cross-Sectional SEM Analysis, TEM Analysis of a Pixel

Transistor and Gate Oxide, Related Pixel Dimensions

Module 5: Substrate Dopant Analysis– Pixel Bevel SCM Analysis, Pixel Cross-Sectional SCM Analysis, SRP of Pixel Substrate, SRP and SCM Analyses of

Peripheral Substrate

Module 6: Peripheral Cross-Sectional and Process Analysis– SEM and TEM Analyses of General Structure, Dielectrics, Metals, Vias and Contacts, Column Capacitors, MOS

Transistors, Isolation, Results of SEM and TEM EDS Analyses (BSI Process Features if present)

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Module 4 Contents

Cross Section Reference Parallel to Row Select

– Overview of Pixel Array Edge (Vertical, Section A)– Detail of Pixel Array Edge (Vertical, Section A)– Pixels Near Array Center (Section C)– Pixels Near Array Edge (Section C)– Metal 0 and Floating Diffusion Contact (Section F)– Transfer Transistors (T1, T2) Gate Contacts (Section D)– TEM of Edge of Transfer Gate (Section G)– TEM of Transfer Gate Oxide Thickness (Section G)– Reset Transistor (T3) Gate Width (Section B)– TEM off Pixel AR Layer (Section G)– Source Follower (T4) Gate Width (Section E)– Row Select Transistor (T5) Gate Width (Section A)– Red and Green Color Filters (Section E)– Green and Blue Color Filters (Section E)

Parallel to Column Out– Overview of Pixel Array Edge (Horizontal, Section X)– Microlens Horizontal Shift (Section X)– Reset Transistor (T3) Gate Length (Section X)– Source Follower and Row Select (T4/T5) Transistor Gate Lengths (Section Z)

Pixel Vertical Dimensions Pixel Transistor Dimensions

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Analysis Sites

The die photograph is annotated to show the planes of SEM, TEM, and SCM pixel cross sections Subsequent SEM images are labeled with the cross section references (P2BSx)

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Cross Section Reference

Pixel cross sections – poly

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Overview of Pixel Array Edge (Vertical, Section A)

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Detail of Pixel Array Edge (Vertical, Section A)

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Pixels Near Array Center (Section C)

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Pixels Near Array Edge (Section C)

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Metal 0 and Floating Diffusion Contact (Section F)

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Transfer Transistors (T1, T2) Gate Contacts (Section D)

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TEM of Edge of Transfer Gate (Section G)

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TEM of Transfer Gate Oxide Thickness (Section G)

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Reset Transistor (T3) Gate Width (Section B)

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TEM off Pixel AR Layer (Section G)

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Source Follower (T4) Gate Width (Section E)

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Row Select Transistor (T5) Gate Width (Section A)

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Red and Green Color Filters (Section E)

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Green and Blue Color Filters (Section E)

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Overview of Pixel Array Edge (Horizontal, Section X)

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Microlens Horizontal Shift (Section X)

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Reset Transistor (T3) Gate Length (Section X)

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Source Follower and Row Select (T4/T5) Transistor Gate Lengths (Section Z)

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Pixel Vertical Dimensions

31°Pixel field of view

0.90Red filter thickness

0.95Green filter thickness

1.0Blue filter thickness

11°Chief ray angle, vertical

15°Chief ray angle, horizontal (estimated)

34 nmPixel AR thickness

1.5/1.3Microlens major/minor axes (elliptical)

6.5 nmTransfer transistor gate oxide thickness

3.0Optical stack height (top of microlens to silicon substrate)

Dimension (µm)Feature

26Image Sensor Die Utilization Analysis

Pixel Transistor Dimensions

0.28

0.44

0.30

Variable (0.2 – 0.4)

Gate Length (µm)

0.24Row select (T5)

0.24Source follower (T4)

0.23Reset (T3)

Variable (0.35 – 0.65)Transfer (T1, T2)

Gate Width (µm)Transistor

27Image Sensor Die Utilization Analysis

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