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Stress workshop 2010 1 Electronic Thin Film Lab Improved interconnect properties for nano-twinned copper: Microstructure and thermal stability Department of Materials Science and Engineering, University of California at Los Angeles K. N. Tu, Di Xu, and Hsin-Ping Chen
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Page 1: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 1 Electronic Thin Film Lab

Improved interconnect properties for nano-twinned copper: Microstructure and thermal stability

Department of Materials Science and Engineering,University of California at Los Angeles

K. N. Tu, Di Xu, and Hsin-Ping Chen

Page 2: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 2 Electronic Thin Film Lab

Acknowledgement

Nanotwinned Cu work is supported by NSF/NIRT-0506841: "Nanostructured Materials for Interconnect and Packaging Technology”

Our collaborators:

UCLA: Prof. Vidvuds OzolinsAMD Dresden: Ehrenfried Zschech, Inka Zienert, Holm Geisler, Petra HofmannNIST: Dr. Gery R. StaffordIBM: Dr. C. K. HuNational Tsing Hua University : Prof. L.J. Chen, Prof. Chien-Neng LiaoNational Chiao Tung University: Prof. Wen-Wei Wu

Page 3: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 3 Electronic Thin Film Lab

Outline

•Background and motivation• Processing and Characterization• Nanotwin formation mechanism• Effect of nanotwins on physical properties of Cu

Hardness and microstructure Grain growth behavior of nanotwinned Cu Thermal stability of (111) and (112) twins Electromigration behavior

• Summary

Page 4: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 4 Electronic Thin Film Lab

Background on Nano-twinned copper

Lu L. et al, Science 304 (2004), 422-426

Nanotwinned Cu shows veryhigh mechanical strength andgood electrical conductivity

Page 5: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 5 Electronic Thin Film Lab

In-situ TEM observation of atom diffusion at twin boundaries in Cu

Twin boundaries can effectively block the EM induced atomic migration.

K.C Chen, W.W.Wu, C.N. Liao, L.J.Chen and K.N.Tu, Science 321, (2008).

Promising applications in Cu interconnects and other fields

Page 6: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 6 Electronic Thin Film Lab

Processing: Pulse electroplating

• On TimeHigh current density high volume of nuclei

• Off-time Recrystallization Grain Growth Nano twins may form

Cu Ni Ti Si Si

Cu column

Cu thin film (1~5 μm thick) Cu TSV (10~50 μm diameter) Cu lines (100nm~3 μm wide)

Page 7: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 7 Electronic Thin Film Lab

Nanotwin Characterization

Advantage Disadvantage

X-ray diffraction

crystallinity, preferred orientationNon-destructive, large penetration depth

No microstructure imaging, cannot show twin boundaries

SEM Morphology information, easy access

small penetration depth, low contrast for twinned grains

TEM Accurate identification of twin, high resolution

Time consuming sample preparation process

EBSD Simple sample preparation,Grain and boundary info over large surface area

Only surface information (~50 nm depth)

FIB Cross section microstructure,TEMsample preparation

Destructive, Gacontamination

100nm

Page 8: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 8 Electronic Thin Film Lab

Stoney’s equation:

In Situ Stress MeasurementNational Institute of Standards and Technology

)/,/(6

22

mJmNfRtEF ss

w

avg Fw

t f

f

winc dt

Fd

Fw (t )dt0

t f

(film growth)

Stress relaxation occurs at pulse off time during pulse electrodeposition

Page 9: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 9 Electronic Thin Film Lab

Nanotwin formation mechanism• Recrystallization occurs during pulse off time• Effect of biaxial stress on nanotwin formation by First principles

calculations

When the strain is high enough (either compressive or tensile) in Cu, it’s easy to form twinning structure during stress

relaxation

Di Xu et al., Appl. Phys. Lett., 91, 254105 (2007)

Page 10: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 10 Electronic Thin Film Lab

In-situ stress measurements

The energy (per atom) of a system with m layers separating twin boundaries can be given by :

%)2.0()( twinFCC E

mAEmE

Twin spacing about 28 nm

400 MPa stress

Page 11: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 11 Electronic Thin Film Lab

Comparison with twin in Al [strain in (111) plane]

-0.020 -0.015 -0.010 -0.005 0.000 0.005 0.010 0.015 0.020

-3.696

-3.694

-3.692

-3.690

-3.688

-3.686

-3.684

-3.682

-3.680

-3.678

Tota

l ene

rgy

(eV/

atom

)strain in (111) plane

Al with twinAl FCC

It’s much easier to form twinning structure in Cu than in Al

-0.020 -0.015 -0.010 -0.005 0.000 0.005 0.010 0.015 0.020

-3.766

-3.764

-3.762

-3.760

-3.758

-3.756

-3.754

-3.752

-3.750

-3.748

Tota

l ene

rgy

(eV/

atom

)

strain in (111) plane

Cu with twinCu FCC

Page 12: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 12 Electronic Thin Film Lab

Microstructure investigation by FIB

Di Xu et al., J. Appl. Phys. 105, 023521 (2009)

Page 13: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 13 Electronic Thin Film Lab

Microstructure studies on nano-twinned Cu

• Nano-indentation study

• Nanotwin effect on Grain growth of Cu

• Thermal stability of (211) incoherent twin

• Electromigration study

Page 14: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 14 Electronic Thin Film Lab

Nanotwin effect on hardness

bottom middle topL.Xu, K.N. Tu et al., Applied Physics Letters, 90, 033111 2007

Page 15: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 15 Electronic Thin Film Lab

Nanotwin effect on hardness

Combination of EBSD & nanoindentation:To study effect of twin boundaries on hardness of Cu at different locations

Twin effects on mechanical strength:• The density of nanotwins•The twin spacing•Twin intersection with grain boundaries

Page 16: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 16 Electronic Thin Film Lab

Current studies on nano-twinned Cu

• Nano-indentation study

• Nanotwin effect on grain growth of Cu– Grain growth at 200C for 1 hr

– Self annealing at RT for 1 year

• Thermal stability of (211) incoherent twin

• Electromigration study

Page 17: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 17 Electronic Thin Film Lab

Grain growth and abnormal grain growth

Abnormal grain growth

1 year at RT

Grain growth at 200 C

2 um

DC electroplated samples with few twins after deposition

Xu D., Sriram V., Tu K.N. et al Microelectronics Engineering. 85(2008), 2155

Page 18: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 18 Electronic Thin Film Lab

Grain growth and abnormal grain growthPulse electroplated samples with many twins after deposition

Page 19: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 19 Electronic Thin Film Lab

Thermal stability of (111) and (112) twin boundary

Time=0, 10.5 nm Time=15 minutes, 9.31 nm, 1.19 nm moved

Time=45 minutes, 7.4 nm, 3.1 nm moved

Temperature=473K

The distance of the observed two 111 twin boundary is

2.72 nm, or about 13{111} spacing

Move of 112 twin boundary

111

111

111

Page 20: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 20 Electronic Thin Film Lab

(112) Incoherent twin boundaries

Page 21: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 21 Electronic Thin Film Lab

Possible (111) twin nucleation mechanism

Twin grows

Twin disappear

Stress at grain boundaries

Page 22: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 22 Electronic Thin Film Lab

Current studies on nano-twinned Cu

• Nano-indentation study

• Nanotwin effect on grain growth of Cu

• Thermal stability of (211) incoherent twin

• Electromigration study– Electromigration test on IBM samples

– In situ TEM observation of 112 boundary motion under EM

Page 23: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 23 Electronic Thin Film Lab

*j xZ e

23

e-

Electron wind force direction

Back stress direction

Al strip10 m

Critical product:

jeZkTDC

dxd

kTDCJ *

Higher yield stress could give longer critical length.

Page 24: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 24 Electronic Thin Film Lab

Nanotwin effect on Electromigration (sample from IBM, Dr. C. K. Hu)

Power+ ‐

V

e‐Cu line

Segment 1

Segment 2

Segment 3

100 um

e‐

Page 25: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 25 Electronic Thin Film Lab

Possible effect of twins on electromigration

Page 26: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 26 Electronic Thin Film Lab

Summary

• Nanotwinned Cu thin films and interconnects have been produ-ced by pulse electroplating and illustrated by various characterization techniques

• Effect of stress on nanotwin boundary formation has been inve-stigated by first principles calculations, in situ stress measurements and microstructure characterization

• Effect of twin boundaries on hardness, grain growth and electromigration behavior have been studied by various measurement methods combined with microstructure characterization techniques

• Cu with high density of nanotwins can improve the mechanical properties and electromigration reliability of metal interconnects

Page 27: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 27 Electronic Thin Film Lab

Thank you for your attention!

Page 28: Improved interconnect properties for nano-twinned copper ...stress.malab.com/downloads/sws2010_t08_tu.pdf · Stress workshop 2010 3 Electronic Thin Film Lab Outline •Background

Stress workshop 2010 28 Electronic Thin Film Lab


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