www.imt.ro

IMT- Bucharest in European reserach ProjectsRaluca Müller

IMT-Bucuresti este un institut national in coordonarea Ministerului Educatiei Nationale si Cercetarii Stiintifice

Institutul Național de Cercetare Dezvoltare pentru Microtehnologie

IMT-București(din 1996)

Institutul Național de Cercetare Dezvoltare pentru Microtehnologie

IMT-București(din 1996)

Institutul de MicrotehnologieIMT

(înființat în 1991)

Institutul de MicrotehnologieIMT

(înființat în 1991)

Institutul de Cercetări pentru Componente Electronice

ICCE (înființat în 1969)

Institutul de Cercetări pentru Componente Electronice

ICCE (înființat în 1969)

Mission: Integrating R&D with education and training and with support for industry (services, technology transfer); networking at national and international level innovation, in the field of micro-nanotechnologies, micro-nanoelectronic and microsystems (RF-MEMS, photonics devices and circuits, sensors and actuators, bio-nano-technologies, CNT and graphene based sensors and nanodevices, (bio)sensors, integrated nano-bio systems, microfluidics, microactuators).Main targeted applications: communications, environment, biomedical, health, automotive, space, energy, robotics.Training activities: master courses, internships, hands-on labs

for students, PhD supervising and post-doc programs.

Main research directions

Four of the 6 KETs

• Micro- and nano-electronics• Photonics • Nanotechnologies• Advanced Materials

IMT history: Timeline

1991 1993 1994 1996 1997-98 2007-2011 2009

Est. of Center for Microtechnologies(CMT) -microelectronic technologies for microsensors and microsystems(MEMS, MOEMS)

Est. of IMT -Institute of Microtechnology- the first research institute with this profile in Eastern Europe

Microtechnologies- i.e,microsystemtechnologies, MST -are included in EU programmes for research grants

Est. of the National Institute for R&D in Microtechnologies-IMT Bucharest -by decision HG 1318/1996 of the Romanian Government (IMT merged with ICCE (an 1969-created Research institute for semiconductor devices)

IMT-Bucharestreceives its 1st EC grant (FP4) -MEMSWAVE project (1998-2001); later nominated among 10 finalists for the EC-Descartes prize. First, and for a long term the only EC IST project coordinated by an Eastern European country.

IMT gains a stable participation in EC projects: • in FP6 -coordinates 3 SSA's, partner in 12 projects in IST, NMP. • in FP7 and FP7-related -coordinates the REGPOT-type European Centre of Excellence MIMOMEMS,partner in 10 FP7, 4 ENIAC, 5 ERA-NET, 1 COST, 1 Leonardo daVinci.

...

Launched the IMT-MINAFABexperimental facility for micro-nanotech: state-of-the-art, open to multidisciplinary research, education and industry cooperation. Cleanroom+specialized labs (~700 sqm), advanced equipmentsworth ~8Meuro.

IMT history: Timeline

2010 2011 2012 2013

Starts 3 Structural Funds Projects

Graphen based devicesand nanoelectronic

device based on EBL litography

Partner in 3 new FP7 Projects: 2 IP and 1 Strep

CVD Facility Fully in used

Co-organizer of ESSCIRC/ESSDERC Conference, Sept 2013

-NEW EU Project LIFE+ 2012

Start of a trsansfrontalierRO-BG project

Up grade of processing and characterization Facility

Temescal Metal deposition systemand others

1 new FP7 Strepand 1 new ERANET project

2014

POS-CCE-CENASICNew building

Submition of projects in Horizont 2020calls

2015

CENASICNew clean roomNew pricessing Equipments

3 ESA projects

1 H2020 ECSEL

Staff involved in multi and interdisvciplinary research

Staff: 191Technical and scientific personnel: 130Research Staff: 70 researchers + 11 assistant reserchers (64 % PhDs, 18% PhD students)

OrganizationDepartment for Scientific and Technological Research

4 centers, grouping 10 R&D laboratories

► MIMOMEMS: European Research Centre of Excellence “Micro- and nano systems for radiofrequency and photonics”

► CNT- IMT: Centre of Nanotechnologies” (under the aegis of the Romanian Academy)

► CINTECH: Research Centre for integration of technologies” (micro-nano-biotechnologies)

► CENASIC: Research Centre for nanotechnologies andcarbon – based nanomaterials”

Technological Department

● Clean rooms – class 1000, and 10 000● Mask shop including: pattern generator – DWL 66fs Laser

Lithography System from Heidelberg Instruments Mikrotechnik GmbH ● EBL: Electron Beam Nanolitography from RAITH- nanoenginering

work station

The research laboratories of IMT-Bucharest are involved in joint research with international and national partners, including companies, based on a multidisciplinary approach, promoting the convergence of micro-nano-bio- info technologies. Main topics:

► RF-MEMS devices and circuits: design, modelling and manufacturing of dielectric membrane supported inductors, capacitors, filters and antennae based on silicon and GaAs micromachining; micromachined millimetre and sub millimetre wave receiver modules, SAW interdigitated traducers► Photonic devices and MOEMS (waveguides, optical couplers, µring filters and resonators; grating-based microstructures, tuneable interferometers based on movable micromirrors, optical sensors), photonic circuits for optical interconnections►MEMS based microsensors and actuators for bio-medical, environmental, automotive, space applications and robotics: pressure sensors, accelerometers, microgrippers► Microfluidic devices

The research laboratories of IMT-Bucharest are also developing:► Graphene and CNT based micro-nanostructures for sensing and interconnections► Biochips for biological materials investigation and detection (proteins, DNA, enzymes) on various substrates (silicon, glass, polymers), microarrays, biosensors► silicon nanoelectrode arrays, porous silicon layers (El, PL and bio-active properties); field emission nanostructures; ► magnetic nanostructures

Research topics

Facilities for Micro-nanofabrication: IMT-MINAFAB

Services at IMT

Silicon Wafer

Photolitographic mask

Processed wafer Wire bonding(part of packaging

process)

Processing chain

Testing

Services at IMT

Research projects & main directions

IMT involvement in EU Projects

► IMT was involve in 15 FP6 European projects(STREPs, IPs, NoE, CA, SSA, Marie Curie RTN, Leonardo da

Vinci) priorities IST (ICT) and NMP

► IMT was and is involved in 12 FP7 projects, priorities ICT, NMP, HEALTH, ENVIROMENT

► IMT was involved in 4 ENIAC (Nanoelectronics) projects► IMT was/is involved in 8 MNT ERA-NET and 5 COST projects

IMT visibility at European scale

Highlights► IMT- Bucharest was the first coordinator from Eastern Europe of an European Project in IST - FP4 - last call (1998-2001), nominanated as finalist of the Descartes Price in 2002: “MEMSWAVE” project ► IMT- Bucharest- 2011: Innovation Union Competitiveness Report of EC

► The first National Institute and the 5th of Romanian entities-regarding the Most active organization in terms of EC contribution granted to the FP7 research projects

► Digital Agenda 2013 -results for ICT for period 2007-2012 IMT- Bucharest is ranked on the first place among the national institutes in ICT, on 4 th place in Romania

► Romania, through IMT is the only country from Eastern Europe participating every year (since 2007), by invitation, to the World Micromachine Summit (devoted to micro- and nanotechnologies and systems), with the main actors in the field from all continents, providing a picture to worldwide industrial, academic and government initiatives

Highlights

FP 7 projects (1)REGPOT - FP7 project coordinated by IMT-BUCHAREST

• MIMOMEMS- European Centre of Excellence in Microwave, Millimeter Wave and Optical Devices, based on Micro-Electro-Mechanical Systems for Advanced Communication Systems and Sensors, REGPOT call 2007-1, ICT Contract no. 202897, 2008-2011 Coordinator: IMT-Bucharest

IP projects

• SMARTPOWER- Smart integration of GaN & SiC high power electronics for industrial and RF applications ", IP FP7-ICT-2011.3.2, contract no. 288801, 2011 - 2015 Coordinator: Thales SA - Thales Research & Technology, FranceIMT role: partner

• NANOTEC- Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems ", IP FP7-ICT-2011.3.2, contract no. 288531, 2011 - 2015 Coordinator: Thales SA - Thales Research & Technology, FranceIMT role: partner

FP 7 projects (2)

•FlexPAET- Flexible Patterning of Complex Micro Structures using Adaptive Embossing Technology, IP, NMP, 2008-2010Coordinator: Fraunhofer Gesellschaft zur Förderung der angewandtenForschung e.V. Fraunhofer Institut für Produktionstechnolgie (IPT), Germany, IMT role: partner

•NanoValid- Development of reference methods for hazard identification, risk assessment and LCA of engineered nanomaterials, FP7 Large-scale integrating Collaborative Project 2011-2015, IP, NMP. Coordinator: NordMiljö AB (NOMI), SwedenIMT role: partner

IP projects

Laboratory of Nanobiotechnology

European Projects ►►►► On-going ProjectsFP7 Collaborative Project (Small or medium-scale focused research projects)█ Development of sustainable solutions for nanotechnology basedproducts based on hazard characterization and LCA - NanoSustain” –(2010 – 2013)

FP7 Large-scale Integrating Collaborative Project█ Development of reference methods for hazard identification, riskassessment and LCA of engineered nanomaterials – NanoValid” - (2011 – 2015)

LIFE+ (Environment Policy and Governance) Project

█ “Development of an interactive tool for the implementation of environmental legislation in Nanoparticle manufacturers” - (Aug. 2013 –2015)

Related FP 7 projectsParticipation in JTU ENIAC (Nanoelectronics)

• SE2A- Nanoelectronics for Safe, Fuel Efficient and Environment Friendly Automotive SolutionENIAC2008-1, Coordinator: NXP Semiconductor Netherlands BV, The Netherlands.IMT role: partner, Dr. Alexandru Muller• MERCURE- Micro and Nano Technologies based on wide band gap materials for future transmitting receiving and sensing systemsENIAC2009-1, Coord: Thales Research and Technology, France. IMT role: partner, Dr. Alexandru Muller• NANOCOM- Reconfigurable Microsystem Based on Wide Band Gap Materials, Miniaturized and Nanostructured RF-MEMSCoordinator Thales Research and Technology, France•IMT role: partner, Dr. Mircea Dragoman•MotorBrain- Nanoelectronics for Electric Vehicle Intelligent Failsafe Drive Train;ENIAC-2010-1, Coordinator: Infineon AG, Germany IMT role: partner, Dr. Gabriel Moagar-Poladian

Example: Mix and match lithography

Carbon nAnotube Technology for High-speed nExt-geneRation nano-InterconNEcts – CATHERINE- FP7- ICT -

STREP(2008-2010)Vertical interconnects - proof of concept

Micro-Nanoelectronics

100 nm wide fingers/interdigitspacing

GaN membrane supported UVPhotodetector‐

Published in  Thin Solid Films (2011) pp 

2158‐2161

• Very thin membrane layer(0.4 m, obtain by DRIE)to minimize the absorption of the radiation in the GaN

· (Possibility of localized backside illumination with application in UV images

• Increased responsivity (for front and backside illumination)

Schematic cross-section of the membrane MSM UV detector structure.

MSM photodetectors on silicon

Graphene-based plasmonic photodetector

Nanoelectronics + Photonics

Temescal FC 2000 is a clean‐room compatible, bell‐jar shaped, loadlocked PVD system equipped with both e‐beam ant thermal evaporation sources

Interdigitated electrodes with 100 nm width, fabricated by E‐Beam lLthographyand highly directional metal evaporation of 10nm Cr and 100 nm Au. 

European Centre of Excellence in Microwave, Millimetre Wave and Optical Devices, based on Micro-Electro-Mechanical Systems for Advanced Communication Systems and Sensors-“MIMOMEMS”- FP7 Project No 202897 (2008-2011), REGPOT call 2007-1

Coordinator Dr. Alexandru Muller

The overall aim of the MIMOMEMS project was to bring research activity in Radio Frequency (RF) and Optical Micro‐Electro‐Mechanical Systems (MEMS) at the National Institute for Research and Development in Microtechnologies (IMT‐BUCHAREST), Romania, to the highest European level, and create a European Centre of Excellence in microwave, millimetre wave and optical devices, based on Micro‐Electro‐Mechanical Systems for Advanced Communication Systems and Sensors.

►Collaborative scientific work and state‐of‐the‐art devices and technologies have been developed in collaboration with the twining partners: FORTH Heraklion and LAAS Toulouse

Highlights:

GaN based 5.3 GHz SAW structure (A Muller, D.Neculoiu, G Konstantinidis, et al,  IEEE Electron Devices Lett., vol 31, no. 12, 2010, pp 1398‐1400)

► Three experienced scientists (post‐docs) have been recruited. At the end of the project, the researchers became full time IMT employees

► Upgrade the research equipment ( 50% of founds)

Millimeter wave characterization equipment up to 110 GHz

Scanning Near Field 

Microscope SNOM WitecAlpha 300S

Au plating facility for semiconductor wafers

Frequency syntesizer up to 

110 GHz

► Organisation of workshops and conferences, ► Dissemination and promotional activities

• 10 ISI ranked papers published in journals in cooperation with twining partners (IEEE Electron Device Lett., Electronic Letters, Appl. Optics, Microelectronics Journal, J. Opt. A: Pure Appl. Opt, Thin Solid Films, etc) • 25 papers submitted and accepted to prestigious international conferences (Asia Pacific Microwave Conference, EMRS, NATO Workshop, European Microwave Conference, MEMSWAVE, CAS, MME, EOS Topical Meeting on Optical Microsystems)• One  chapter in a book (Springer)• Organizing of two Scientific Workshops and one Strategic Workshop devoted to the MIMOMEMS project at the IEEE International Semiconductor Conference, CAS 2008 ‐ 2010 in Sinaia• 20 projects proposals in FP7 and FP7 related calls have been submitted having the support of the MIMOMEMS project. Two IPs in the FP7‐ICT‐2011‐7 call (SMARTPOWER and NANOTEC) and 4 projects in calls related to FP7 (ENIAC and MNT ERANET) have been successful.

GaN membrane supported UV photodetector(A Muller, G. Konstantinidis, A. Dinescu et al, Thin Solid Films, 520 (2012) 2158–2161)

-Upgrade to 110 GHz the 65 GHz “on wafer” characterization set-up: -Upgrade of the VNA up to 110 GHz ( Anritsu)

Photo image of 77 GHz antenna and its S22parameter measured with the new equipment

Photo image of 94 GHz filter and its S parameter measured with the new equipment

New frequency syntesiserup to 110 GHz (Agilent)

installed in IMT

The near field scaning optical microscope Witec Alpha 300S

The Au plating facility for

semiconductor wafers

Experimental set-up for UV photodetector responsivity

Participation in FP7 STREP MEMS-4-MMIC (2008-2012)“Enabling MEMS-MMIC technology for cost-effective multifunctional

RF-system integration” (http://www.mems4mmic.comhttp://www.mems4mmic.com)• Coordinator: IMST GmbH (Germany)• Partners:

– Technical Research Centre of Finland (VTT)– Ommic – France– Swedish Defence Research Agency (FOI)– Institut d’Electronique, de Microélectronique

et de Nanotechnologie (CNRS-IEMN) –France

– SAAB Microwave Systems – Sweden– IMT Bucharest – Romania

77 GHz receiver designed by IMT Bucharest and processed at VTT FinlandMicromachined Structures, Microwave Circuits and Devices Lab. (RF MEMS)

Project meeting in Bucharest, March 2012

IMT involvement: design and characterization of millimeter wave circuits in the K and W band

The MEMS‐4‐MMIC project was aimed at the integration of RF‐MEMS switches onto MMIC creating highly  integrated multifunctional building blocks  for high‐value applications. The project has been concluded successfully and a whole range of RF‐MEMS MMIC components has been realized.

Monolithic integration of a Schottkydiode with a double folded slot antenna

Micromachined Doppler speed sensor for automotive industry (SUV vehicles)

Micromachined Structures, Microwave Circuits and Devices Lab. (RF MEMS)

Tape speed: 1 m/s

Calc. speed: 1.1 m/s

Applications: •True speed measurement for high risk situations where wheel rotation speed measurement failsProof of concept: Doppler sensor at 77 GHz •emitted signal illuminates backside of the dual beam micromachined antenna and is reradiated•the signal reaches the moving surface and is reflected back with a frequency shift, due to the Doppler effect•the difference in frequencies is extracted by the diode

true speed measurement

3D EM modeling GaAs micromachining

Project SE2A (2008-2011) coordinated by NXP Netherlands

Characterization

Silicon micromachining Hybrid integration

Front end for W-band (75 - 110 GHz) passive imaging for security applications

*http://www.boulder.nist.gov

Project ERA-NET MEMIS (2010-2013) coord. LAAS-CNRS Toulouse, France

Low-cost imaging sensor•design and characterization of micromachined high gain antennasworking in the 75 -110 GHz band•Antennas supported by 1.4 µm thin dielectric membranes•Hybrid integration with a detector diode and a low noise amplifier for improved sensitivity

Security applicationsCharacterization

3D EM modeling

ENIAC (2010 – 2015) coord. Thales Research & TechnologyMERCURE- Micro and Nano Technologies based on wide band gap materials for future transmitting receiving and sensing systemsHumidity sensing device

Coated FBAR structure under test

Experimental set‐up

Wafer under testTechnology based on film bulk acoustic resonator (FBAR) structures operating in the GHz frequency range- The work was done in cooperation with FORTH HeraklionGreece, University of Science and Technology Krakow Poland and Via Electronics Jena Germany.FBAR structures obtained by micromachining and nano-processing of GaN/Si.State of the art technology in GaN acoustic devices: resonance at 6.3 GHz /FBARsApplications: humidity monitoring.

___________________________________________________________________________Micromachined Structures, Microwave Circuits and Devices Lab.

(RF MEMS)

PCB holder FBAR humidity sensor and resonance frequency

shift measurement

GaN SAW based sensor for on-chip temperature monitoring

Smart integration of GaN & SiC high power electronics for industrial and RF applications ", IP FP7-ICT

FP7 IP SMARTPOWER (2011-2016), Coord. Thales R&T, France

• Applications: temperature monitoring of GaN based MMICs working in high power radars

• Single resonator SAW with interdigital transducers (IDT) having 200 nm wide digit/interdigit spacing; 100 µm digit lengths; 100 – 200 digits and 50 reflectors, placed on both sides of the IDT

• The SAW based temperature sensors structures were characterized, in the –268 °C to +150°C temperature range

• measured sensitivity for T=[–40°C; +150°C] -> linear behaviour (200 nm wide digit/interdigit spacing)

• sensitivity = 344 kHz/°C • temperature coefficient of frequency TCF=63 ppm/°C

Nano‐lithography Temperature sensor characterization

Temperature dependence 

SMARTPOWER (FP7 2011‐2016)Smart integration of GaN & SiC high power electronics for industrial and RF 

applications.www.smart‐power.com

Remote temperature sensing device

SAW structure of "single resonator" type. Nanometric interdigitsdetails. 

Based on GHz-range surface acoustic wave (SAW) on GaN substrate.Original "single resonator" structure in IMT's SAW technology: nanolithography with 100-200 nm features.High sensitivity remote sensing -55°C... +150°C; 359.7 kHz/°C ,i.e., 67 ppm /°C.FP7-ICT-2011.3.2, 2011 - 2016, coord. Thales Research & Technology.Applications: monitor the temperature of GaN MMIC s (radar front-ends), monitor the temperature in harsh environmental conditions; aerospace and transport, climate etc.

Micromachined Structures, Microwave Circuits and Devices Laboratory (RF MEMS)

Participation in FP7 IP NANOTEC (2011‐2015)“Nanostructured materials and RF‐MEMS RFIC/MMIC technologies for 

highly adaptive and reliable RF systems”

The  NANOTEC project  aims  to  generate  innovative approaches  towards  novel  RF/mm‐wave  systems  with increased  functionality  and  potentially  lower  cost addressing future needs of European industry.

Major IMT contributions: design of the 94 GHz high‐sensitivity antenna front‐end for passive imaging & characterization of the RF‐MEMS low‐noise blocks for 94GHz

• Coordinator: Thales Research & Technology, France• Partners: 17 partners from 7 countries, including 

7 research institutes and universities, 6 SMEs and 4 subsidiaries of a major industry

Membrane

Manufacturing & MeasurementsElectromagnetic design

Dielectric lens

Antenna

Flexible Patterning of Complex Micro Structures using Adaptive Embossing Technology FLEXPAET– FP7 project (IP -priority NMP)

• light ceiling

Aim: development of an innovative process chain and of a machine for high volume production of large-area masters micro structured surfaces for diffractive optial elements

App

licat

ions

• light ceiling

• backlight technology

Results in EU Projects

IMT Role: Development of an algorithm for embossing optimization of large areas DOEs for obtaining the required optical properties

Optimized embossing-

resultsEmbossed test slide 90mm x 250mm backlight

38

FP7 STREP NANO RF «Carbon Based Smart System for Wireless Application»

Coordinator: Thales Research & Technology, France (2011-2016)

The concept of NANO‐RF is to develop a new approach for future generation of T/R modules by using CNT  and  graphene technologies  leading  to  a  revolutionary new “nano T/R module” working at very high frequencies (up to 80 GHz).Major  IMT contributions: The  IMT  role  is  the design of CNT and graphene devices and circuits. 

graphene 36 μm

SEM image of the CPW line over graphene

Graphene antenna - design

Design of the CNT based RF switch

44--electrodeelectrode designdesign

IMT: Micromachined Structures, Microwave Circuits and Devices Lab. (RF MEMS); Coordinator Dr. Mircea Dragoman

Research Highlights

Silicon pillars obtained using ICP plasma etching, and combined dry and wet etching - front-surface texturing of solar cells.

ZnO interconnected nanowire networks grown from solution on patterned substrate (MNT ERA-NET, MULTINANOWIRES)

Integrated Platform for Pesticides Detection (PESTIPLAT) MNT ERA NET Transnational Call 2011Duration: 2011 - 2014

The  platform  developed  within  PESTIPLAT can  be used  in  food  security monitoring  (fruits,  vegetables, drinking  water,  milk  etc.)  and  agriculture  research laboratories.It  is  a  user  friendly  tool  able  to  perform  fast measurements  (10  minutes),  to  diagnose  the pesticide  presence,  to  alert  and  to  record  data  for monitoring  and  statistical  purposes,  addressing important issues within the food security

Consortium members:‐ Coordinator: Carmen Moldovan (IMT‐Bucharest), Romania ‐Partnes: Romelgen SRL, RO; ‐HSG‐IMIT c/o IMTEK, DE; ‐Scienion AG Research and Development, DE

Micro immunosensors platform

Sensors chip for impedimetric measurements (right) and detail (left inset)

Multiparametric, miniaturized micro immunosensors platform - integrated with temperature and pH sensors into micro fluidic channels.Novel technology able to replace the standard “ELISA”, chemi-luminescence, particle-enhanced immunonephelometry and lateral flow immunoassay techniques.Applications: health (e.g., early investigation of the metabolic syndrome).

42

MEMS Electro-thermally actuated Polymeric MicrogrippersApplications:

manipulation of MEMS and optic components: lens, fibers;micromanipulation of cells and biological tissues

Coupled electro-thermo-mechanical simulations with CoventorWare: Microgripper structures on a chip

ERA.Net Project “3-Scale modelling for robust-design of vibrating micro sensors” - 3SMVIBNational Project - “Microsisteme MEMS de manipulare pentru micro-robotica”

Electrostatically actuated microgrippers Vibrating structures

- we started from the principle “all-on-the-shaft”all the components (transducer, sensors, etc.) mounted on the shaft the energy supply / signal extraction acquired by capacitive means

The initial transducer structure. Left: lateral view of half of the transducer; Center: axial view of half of the transducer; Right: izometric view of half of the transducer. 

Simulation results for the initial transducer (half part). Far left: Total deformation due to centrifugal force; Left: Radial deformation under centrifugal force; Right: Axial deformation under centrifugal force; Far right: Relative elastic deformation

under centrifugal force.

TORQUE SENSOR CONCEPT DEVELOPMENT – Initial structure

Nanoelectronics for Electric Vehicle Intelligent Failsafe PowerTrain (MotorBrain)Coordinator: Infineon Technologies AG (Germany)

New ESA Projects

ESA (European Space Agency)► Project: 0-level encapsulation of reliable MEMS switch structures for RF applications (2014-2016) ESA Contract No. 4000110819/14/NL/CBi

►Project: Proba 3 Coronograph System A proposal for ESA, submitted by CSL & the Coronograph System Consortium in response to RFQ/3-13899/13/NL/GLC (2014-2017)

IMT-Bucharest responsible partner for “Occulted Position Sensor Emitters Heads”

►Project: Microwave filters based on GaN/Si SAW resonators, operating at frequencies above 5GHz" ESA Contract No. 4000115202/15/NL/Cbi, (2015- 2017)

IMT Implication in FP7 Projects – partner with airspace companies

●Thales Systèmes Aéroportés (TSA), France:

-Smart Power Smart integration of GaN & SiC high power electronics for industrial and RF applications. - Nano-RF Carbon Based Smart Systems For wireless applications.

● Thales Systèmes Aéroportés (TSA), France● EADS Deutschland GmbH, Germany

-NANOTEC- Nanostructured materials and RF-MEMS RFIC/MMIC technologies for highly adaptive and reliable RF systems-NANOCOM- Reconfigurable Microsystem Based on Wide Band Gap Materials, Miniaturized and Nanostructured RF-MEMS - ENIAC

Other EU Projects

SEE- Romania- Norvegia (2014-2017)“Engineered group III-N-(As) alloys and low-dimensional heterostructures for high efficiency intermediate band solar

cells- N-IBCell”

H2020 EU Projects

►3CCar- Integrated Components for Complexity Control in affordable electrified cars - H2020-ECSEL (2015-2018)Coordinator: Infineon AG, GermanyIMT role: partner

► SelectX: Integrated Crossbar of MicroelectromechanicalSelectors and Non-Volatile Memory Devices for NeuromorphicComputing- H2020 -Marie Sklodowska-Curie; Type of action: RI

Research Centre for Integrated Systems Nanotechnologies and Research Centre for Integrated Systems Nanotechnologies and Carbon Based Nanomaterials Carbon Based Nanomaterials POSPOS--CCECCE

www.imt.rowww.imt.ro/CENASIC/CENASIC

A new infrastructure within IMT

Bucharest dedicated to

technologies based on Carbon

nanomaterials: SiC, graphene,

nanocrystalline diamond

Under construction!

► New building - 1000 sqm•4 levels: clean room, technical level, 2 levels for labs and offices•New spaces for: R&D/education/collaborations► Dedicated technological facilities:• Clean room – 200 sqm, class 1000/100 (adjacent and complementary to the CVD and Dry-etching clean room)• Advanced equipment for synthesis, processing, characterization, simulation• New 10 positions for researchers

MAIN OBJECTIVES

In use since November 2015 !

► SiC technologies and functional micro-nanostructures; Processes for SiC-based micro- and nanostructures►Technologies for graphene and hybrid MEMS/NEMS► Technologies for nanocrystalline diamond and applications in MEMS/NEMS and precision mechanics

RESEARCH DIRECTIONS

1. Multiprocess furnace (oxidation, diffusion, annealing)

2. PECVD (graphene, CNTs, SiC, nanocristalline diamond)

3. RF sputtering (dielectric layers)4. ALD (high-precision films of

oxides and metals)5. MBE (growth of wide bandgap

materials: AlN, GaN)6. FTIR spectrometer (wide range)

1. Laboratory for Thermal processes2. Laboratory for Processing of carbon based

nanomaterials and nanostructures3. Laboratory for Thin layer spectrometry4. Laboratory for Graphene technologies5. Laboratory for Chemistry of hybrid

interfaces6. Electro-mechanical and sample preparation

room7. Laboratory for Electromechanical testing

and reliability8. Laboratory for Simulation and design for

carbon-based MEMS/NEMS

NEW LABORATORIESNEW EQUIPMENT

Array of 18 BG‐FETs on graphene

A back gated FET on graphene 

ribbon

Contact: Dr.Adrian Dinescu

Testarea tranzistoarelor realizate pegrafenă depusă pe plachetă de siliciu: M. Dragoman, A.Dinescu and D.Dragoman, “Negative differential resistance in graphenebasedballistic field-effect transistor with oblique top gate”, Nanotechnology 25 415201 (2014).

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