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Infineon DF11MR12W1M1_B11CoolSiC 1200V 50A MOSFET Module Power Semiconductor report by Elena Barbarini & Farid Hamrani February 2018 – version 1
SUMMARY
Overview / Introduction 4
o Executive Summary
o Reverse Costing Methodology
Company Profile 9
o Infineon
Physical Analysis 18
o Synthesis of the Physical Analysis
o Package analysis
Package opening
Package Cross-Section
o SiC MOSFET Die
MOSFET Die View & Dimensions
MOSFET Die Process
MOSFET Die Cross-Section
o SiC Diode Die
Diode Die View & Dimensions
Diode Die Process
Diode Die Cross-Section
o Si Diode Die
Diode Die View & Dimensions
Diode Die Process
Diode Die Cross-Section
Manufacturing Process 88
o SiC MOSFET & SiC diode Front-End Process
o SiC MOSFET & SiC diode Fabrication Unit
o Si Diode Die Front-End Process
o Si Diode Die Fabrication Unit
o Final Test & Packaging Fabrication unit
Cost Analysis 104
o Synthesis of the cost analysis
o Yields Explanation & Hypotheses
o MOSFET die
MOSFET Front-End Cost
MOSFET Die Probe Test, Thinning & Dicing
MOSFET Wafer Cost
MOSFET Die Cost
o SiC Diode die
Diode Front-End Cost
Diode Die Probe Test, Thinning & Dicing
Diode Wafer Cost
Diode Die Cost
o Si Diode die
Diode Front-End Cost
Diode Die Probe Test, Thinning & Dicing
Diode Wafer Cost
Diode Die Cost
o Complete Module
Packaging Cost
Final Test Cost
Component Cost
Price Analysis 125
o Estimation of selling price
Comparison 128
o Comparison with Rohm, Cree and ST 1200V SiC MOSFET
Feedbacks 132
Company services 134
Overview / Introductiono Executive Summaryo Marketo Reverse Costing
Methodology
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Executive Summary
The market outlook for SiC devices is promising, with a compound annual growth rate (CAGR) of 28% from 2016 - 2020. This will increase to 40% from 2020 - 2022 due to growth in industrial applications. In total, the SiC market will exceed $1B in 2022. In the photovoltaic sector, SiC devices have an actual value of $71M, which will increase by around 28% in 2022. The reason for this relates to market forces pushing for loss reduction, not only for the sake of improved efficiency but also for smaller packages.
Capitalizing on Infineon’s years of experience and know-how, the CoolSiC™ MOSFET product line enables drastically new system designs compared to the usual silicon-based converters. Infineon’s new boost converter targets the entire photovoltaic conversion chain (inverter, battery charging, and energy storage). Based on a 1200V 23mΩ SiC Trench MOSFET, this product’s best-in-class performance enables highly efficient energy harvesting.
Supported by a full teardown of the module’s components and housing, this report reveals Infineon’s innovative assets, such as its unique shifted doping implantation design, which brings several advantages to the 1200V SiC MOSFET: superior gate-oxide reliability, switching performance and conduction losses, the highest transconductance level (gain), a threshold voltage of Vth = 4 V, and short-circuit robustness.
Another of this module’s assets is the use of cutting-edge SiC Schottky Diodes from Infineon’s thinQ!™ product line. This component is based on an MPS (merged-pin-Schottky) structure that combines the shielding of the electric field from the Schottky barrier and an increased surge current capability via hole injection.
Thanks to its EasyDUAL™ 1B package design, Infineon’s new device is very cost-competitive. Also, the modules lack base plates, and the screw clamp provides a new, fast, reliable, low-cost mounting concept for this DBC-based housing.
Based on a teardown of the entire module, this report details the complete bill of materials (BoM), die manufacturing, and packaging processes. An estimated manufacturing cost and selling price is also included. Moreover, this report proposes a comparison with competitors’ 1200V SiC MOSFET solutions, and analyses the approach used by Infineon to package its Si IGBT and SiC MOSFETs vs. the solutions proposed by Rohm for its 1700V SiC MOSFET module.
Overview / Introduction
Company Profile & Supply Chain o Infineon Profileo Infineon Product
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Infineon DF11MR12W1M1_B11 Datasheet
Overview / Introduction
Company Profile & Supply Chain o Infineon Profileo Infineon Product
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Infineon DF11MR12W1M1_B11 Datasheet
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
DBC Substrate – Physical Analysis
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die process
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
MPS process
1200 V thinQ!™ SiC Schottky diode generation 5 design. MPS(merged-pin-Schottky) structure combines the shielding of theelectric field from the Schottky barrier and an increased surgecurrent capability by hole injection. Dashed lines (left) showcurrent density at higher currents. Cell design (right) of anoptimized cell structure with hexagonal p+ islands.
MPS Schottky Diode Implantation (Courtesy of Infineon)
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section
Overview / Introduction
Company Profile & SupplyChain
Physical Analysiso Synthesiso Packageo Die designo Die Cross-Section
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Die cross section – Back side
MANUFACTURINGPROCESS FLOW
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo MOSFET Fab Unito MOSFET Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Process Flow (2/4)
Implantation
• SiO2 deposition
•Pattern SiO2
•P+ source implantation
Trench
•Trench
Gate oxide
•Thin Gate Oxide growth and pattern
Drawing not to Scale
0 000
0 000
0 000
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flowo MOSFET Fab Unito MOSFET Process Flowo Packaging Fab Unit
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Module Process Flow
Depostion
• Screen Printing of brazing paste on the DBC
Test
• Automated Solder Paste Inspection
Placement
• Components Pick & Place (dies and studs)
C O S TANALYSIS
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
Main steps of economic analysis
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
Yields Explanation
The wafers and dies are tested during the process flow. There are 2 types of test :
The tests on the physical characteristics of the wafer like the thickness deposited.
The tests on the electrical functionalities of the die.
The difference is important because with the physical test, a bad result means a problem on a step and all the dies on the wafer are defective, so the wafer is scrapped. Usually these yields are good for mature technologies.
The tests on the dies are different. Each die is tested, one by one or simultaneously using “parallel” tests, and only the defective dies are scraped. During the probe test which is realized on the wafer, the defective dies are marked and are not assembled in package.
Yield Apply on Description
Manufacturing Yield MOSFET+Diode The defective wafers are scraped
Probe yield MOSFET+ Diode
The defective dies are scrapedThe number of good dies is function of the probe yield. Only the good dies are assembled in the package
Dicing Yield MOSFET+ Diode The defective dies are scraped
Packaging yield MOSFET+ Diode + Package The defective components are scraped
Final test yield MOSFET+ Diode + Package The defective components are scraped
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
MOSFET Front-End Cost
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
Housing – Plastic Cover Cost Calculation
Overview / Introduction
Company Profile & SupplyChain
Physical Analysis
Manufacturing Process Flow
Cost Analysiso Synthesiso Die Costo Packaging Costo Component Cost
Selling Price Analysis
Comparison
Feedback
About System Plus
Final Module Cost
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Plus
Estimated Manufacturer Price
Overview / Introduction
Company Profile & Supply Chain
Physical Analysis
Manufacturing Process Flow
Cost Analysis
Selling Price Analysis
Comparison
Feedback
About System Pluso Company serviceso Related reportso Contacto Legal
REVERSE COSTING ANALYSES - SYSTEM PLUS CONSULTING
POWER SEMICONDUCTORS & COMPOUND• Wolfspeed C2M0025120D SiC MOSFET• Infineon FF400R07A01E3 Double Side Cooling IGBT Module• Infineon FS820R08A6P2B HybridPACK Drive IGBT Module• ROHM 1700V SiC MOSFET SCT2H12NZGC11 Discrete• STMicroelectronics 1200V SiC MOSFET STC30N120• 1200V Si IGBT vs SiC MOSFET Technology and Cost comparison• ROHM _BSM180D12P3C007_1200V Trench SiC MOSFET• Wolfspeed C3MTM Platform SiC 900V MOSFET• Semikron SKiM306GD12E4 1200V 300A IGBT Solderless Module• CREE CAS300M17BM2 SiC MOSFET• CREE CAS120M12BM2 1200VSiC Module• Infineon S100R12PT4 EconoPACK ™4 1200V IGBT4 Module FS100R12PT4
EconoPACK4 IGBT• Rohm SCH2080KE – SiC power MOSFET with SiC-SBD
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