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TrenchStop 5 High speed IGBT
16
IGBT High speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N120H3 1200V high speed switching series third generation Data sheet Industrial Power Control
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Page 1: Infineon Ikw40n120h3

IGBTHighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiode

IKW40N120H31200Vhighspeedswitchingseriesthirdgeneration

Datasheet

IndustrialPowerControl

Page 2: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fastrecoveryanti-paralleldiodeFeatures:

TRENCHSTOPTMtechnologyoffering•verylowVCEsat•lowEMI•Verysoft,fastrecoveryanti-paralleldiode•maximumjunctiontemperature175°C•qualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•completeproductspectrumandPSpiceModels:http://www.infineon.com/igbt/

Applications:

•uninterruptiblepowersupplies•weldingconverters•converterswithhighswitchingfrequency

G

C

E

GC

E

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW40N120H3 1200V 40A 2.05V 175°C K40H1203 PG-TO247-3

Page 3: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emitter voltage VCE 1200 V

DCcollectorcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IC 80.040.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A

TurnoffsafeoperatingareaVCE≤1200V,Tvj≤175°C - 160.0 A

Diodeforwardcurrent,limitedbyTvjmaxTC=25°CTC=100°C

IF 40.020.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand timeVGE=15.0V,VCC≤600VAllowed number of short circuits < 1000Time between short circuits: ≥ 1.0sTvj=175°C

tSC

10

µs

PowerdissipationTC=25°CPowerdissipationTC=100°C Ptot

483.0220.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.Value UnitCharacteristic

IGBT thermal resistance,junction - case Rth(j-c) 0.31 K/W

Diode thermal resistance,junction - case Rth(j-c) 1.11 K/W

Thermal resistancejunction - ambient Rth(j-a) 40 K/W

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

StaticCharacteristic

Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA 1200 - - V

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=40.0ATvj=25°CTvj=125°CTvj=175°C

---

2.052.502.70

2.40--

V

Diode forward voltage VF

VGE=0V,IF=20.0ATvj=25°CTvj=175°C

--

1.801.85

2.35-

V

Diode forward voltage VF

VGE=0V,IF=40.0ATvj=25°CTvj=125°CTvj=175°C

---

2.402.602.60

3.05--

V

Gate-emitter threshold voltage VGE(th) IC=1.00mA,VCE=VGE 5.0 5.8 6.5 V

Zero gate voltage collector current ICESVCE=1200V,VGE=0VTvj=25°CTvj=175°C

--

--

250.02500.0

µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 600 nA

Transconductance gfs VCE=20V,IC=15.0A - 20.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.

Parameter Symbol Conditions Unit

DynamicCharacteristic

Input capacitance Cies - 2330 -

Output capacitance Coes - 185 -

Reverse transfer capacitance Cres - 130 -

VCE=25V,VGE=0V,f=1MHz pF

Gate charge QGVCC=960V,IC=40.0A,VGE=15V - 185.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

Short circuit collector currentMax. 1000 short circuitsTime between short circuits: ≥ 1.0s

IC(SC)VGE=15.0V,VCC≤600V,tSC≤10µsTvj=175°C

- 139 - A

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.

Parameter Symbol Conditions Unit

IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 30 - ns

Rise time tr - 57 - ns

Turn-off delay time td(off) - 290 - ns

Fall time tf - 16 - ns

Turn-on energy Eon - 3.20 - mJ

Turn-off energy Eoff - 1.20 - mJ

Total switching energy Ets - 4.40 - mJ

Tvj=25°C,VCC=600V,IC=40.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=70nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

DiodeCharacteristic,atTvj=25°C

Diode reverse recovery time trr - 355 - ns

Diode reverse recovery charge Qrr - 1.90 - µC

Diode peak reverse recovery current Irrm - 12.8 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -150 - A/µs

Tvj=25°C,VR=600V,IF=40.0A,diF/dt=500A/µs

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.

Parameter Symbol Conditions Unit

IGBTCharacteristic,atTvj=175°CTurn-on delay time td(on) - 29 - ns

Rise time tr - 49 - ns

Turn-off delay time td(off) - 366 - ns

Fall time tf - 48 - ns

Turn-on energy Eon - 4.40 - mJ

Turn-off energy Eoff - 2.60 - mJ

Total switching energy Ets - 7.00 - mJ

Tvj=175°C,VCC=600V,IC=40.0A,VGE=0.0/15.0V,RG(on)=12.0Ω,RG(off)=12.0Ω,Lσ=70nH,Cσ=67pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

DiodeCharacteristic,atTvj=175°C

Diode reverse recovery time trr - 639 - ns

Diode reverse recovery charge Qrr - 4.30 - µC

Diode peak reverse recovery current Irrm - 16.0 - A

Diode peak rate of fall of reverserecoverycurrentduringtb dirr/dt - -105 - A/µs

Tvj=175°C,VR=600V,IF=40.0A,diF/dt=500A/µs

Page 7: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 1. Collectorcurrentasafunctionofswitchingfrequency(Tj≤175°C,D=0.5,VCE=600V,VGE=15/0V,rG=12Ω)

f,SWITCHINGFREQUENCY[kHz]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000

20

40

60

80

100

120

140

160

TC=80°

TC=110°

TC=80°

TC=110°

Figure 2. Forwardbiassafeoperatingarea(D=0,TC=25°C,Tj≤175°C;VGE=15V)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

1 10 100 10000.1

1

10

100

tp=1µs

10µs

50µs

100µs

200µs

500µs

DC

Figure 3. Powerdissipationasafunctionofcasetemperature(Tj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,POWERDISSIPATION[W

]

25 50 75 100 125 150 1750

100

200

300

400

500

Figure 4. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLECTO

RCURRENT[A]

25 50 75 100 125 150 1750

20

40

60

80

Page 8: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 5. Typicaloutputcharacteristic(Tj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 1 2 3 4 5 60

20

40

60

80

100

120

140

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 6. Typicaloutputcharacteristic(Tj=175°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

0 2 4 6 80

20

40

60

80

100

120

140

160

180

VGE=20V

17V

15V

13V

11V

9V

7V

5V

Figure 7. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLECTO

RCURRENT[A]

5 10 150

50

100

150Tj=25°CTj=175°C

Figure 8. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tj,JUNCTIONTEMPERATURE[°C]

VCE(sat) ,COLLECTO

R-EMITTE

RSATU

RATION[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0IC=20AIC=40AIC=80A

Venkat
Line
Page 9: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 9. Typicalswitchingtimesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=12Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

t,SWITCHINGTIMES[ns]

5 15 25 35 45 55 65 7510

100

1000td(off)

tftd(on)

tr

Figure 10. Typicalswitchingtimesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=40A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

t,SWITCHINGTIMES[ns]

0 10 20 30 4010

100

1000td(off)

tftd(on)

tr

Figure 11. Typicalswitchingtimesasafunctionofjunctiontemperature(ind.load,VCE=600V,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)

Tj,JUNCTIONTEMPERATURE[°C]

t,SWITCHINGTIMES[ns]

25 50 75 100 125 150 17510

100

1000td(off)

tftd(on)

tr

Figure 12. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=1mA)

Tj,JUNCTIONTEMPERATURE[°C]

VGE(th) ,GATE

-EMITTE

RTHRESHOLD

VOLTAGE[V

]

0 25 50 75 100 125 150 1752

3

4

5

6

7typ.min.max.

Page 10: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 13. Typicalswitchingenergylossesasafunctionofcollectorcurrent(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,rG=12Ω,testcircuitinFig.E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENERGYLOSSES[m

J]

5 15 25 35 45 55 65 750

2

4

6

8

10

12

14

16

18

20Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofgateresistor(ind.load,Tj=175°C,VCE=600V,VGE=15/0V,IC=40A,testcircuitinFig.E)

rG,GATERESISTOR[Ω]

E,S

WITCHINGENERGYLOSSES[m

J]

0 10 20 30 400

2

4

6

8

10

12Eoff

Eon

Ets

Figure 15. Typicalswitchingenergylossesasafunctionofjunctiontemperature(indload,VCE=600V,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)

Tj,JUNCTIONTEMPERATURE[°C]

E,S

WITCHINGENERGYLOSSES[m

J]

25 50 75 100 125 150 1750

2

4

6

8Eoff

Eon

Ets

Figure 16. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(ind.load,Tj=175°C,VGE=15/0V,IC=40A,rG=12Ω,testcircuitinFig.E)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

E,S

WITCHINGENERGYLOSSES[m

J]

400 500 600 700 8000

2

4

6

8

10Eoff

Eon

Ets

Page 11: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 17. Typicalgatecharge(IC=40A)

QGE,GATECHARGE[nC]

VGE,G

ATE

-EMITTE

RVOLTAGE[V

]

0 40 80 120 160 2000

2

4

6

8

10

12

14

16240V960V

Figure 18. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=1MHz)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

C,C

APACITANCE[pF]

0 10 20 3010

100

1000Cies

Coes

Cres

Figure 19. Typicalshortcircuitcollectorcurrentasafunctionofgate-emittervoltage(VCE≤600V,startatTj=25°C)

VGE,GATE-EMITTERVOLTAGE[V]

IC(SC) ,SHORTCIRCUITCOLLECTO

RCURRENT[A]

10 12 14 16 1850

100

150

200

250

300

Figure 20. Shortcircuitwithstandtimeasafunctionofgate-emittervoltage(VCE≤600V,startatTj≤150°C)

VGE,GATE-EMITTERVOLTAGE[V]

tSC,S

HORTCIRCUITW

ITHSTA

NDTIME[µs]

10 12 14 16 18 200

10

20

30

40

50

Page 12: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 21. IGBTtransientthermalimpedance(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1 D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.064143.7E-4

20.0740553.9E-3

30.1623150.01916724

410.0E-30.3399433

Figure 22. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

ZthJC,TRANSIENTTH

ERMALIMPEDANCE[K

/W]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.2907752.7E-4

20.433772.6E-3

30.3630150.01477471

40.027810.1784607

Figure 23. Typicalreverserecoverytimeasafunctionofdiodecurrentslope(VR=600V)

diF/dt,DIODECURRENTSLOPE[A/µs]

trr,R

EVERSERECOVERYTIME[ns]

200 400 600 800 1000200

300

400

500

600

700

800Tj=25°C, IF = 40ATj=175°C, IF = 40A

Figure 24. Typicalreverserecoverychargeasafunctionofdiodecurrentslope(VR=600V)

diF/dt,DIODECURRENTSLOPE[A/µs]

Qrr,R

EVERSERECOVERYCHARGE[µC]

200 400 600 800 10000

1

2

3

4

Tj=25°C, IF = 40ATj=175°C, IF = 40A

Page 13: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

Figure 25. Typicalreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)

diF/dt,DIODECURRENTSLOPE[A/µs]

Irr,R

EVERSERECOVERYCURRENT[A]

200 400 600 800 10006

8

10

12

14

16

18

20

22Tj=25°C, IF = 40ATj=175°C, IF = 40A

Figure 26. Typicaldiodepeakrateoffallofreverserecoverycurrentasafunctionofdiodecurrentslope(VR=600V)

diF/dt,DIODECURRENTSLOPE[A/µs]

dIrr/dt,diodepeakrateoffallofI

rr[A

/µs]

200 400 600 800 1000-300

-250

-200

-150

-100

-50

0Tj=25°C, IF = 40ATj=175°C, IF = 40A

Figure 27. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWARDCURRENT[A]

0 1 2 3 40

20

40

60

80

100

120Tj=25°CTj=175°C

Figure 28. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature

Tj,JUNCTIONTEMPERATURE[°C]

VF ,FO

RWARDVOLTAGE[V

]

0 25 50 75 100 125 150 1751.0

1.5

2.0

2.5

3.0

3.5

4.0IF=10AIF=20AIF=40A

Venkat
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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

PG-TO247-3

Page 15: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

t

a

a

b

b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

vGE

(t)

t

t

IC(t)

vCE

(t)

90% VGE

vGE

(t)

t

t

vCE

(t)

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

parasitic

relief

dI/dt

dI

I,V

Figure A.

Figure B.

Figure C.

Figure E.

Figure D.

IC(t)

Page 16: Infineon Ikw40n120h3

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IKW40N120H3Highspeedswitchingseriesthirdgeneration

Rev.2.1,2014-11-26

RevisionHistory

IKW40N120H3

Revision:2014-11-26,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2009-12-03 -

1.2 2010-02-10 -

2.1 2014-11-26 Final data sheet

WeListentoYourCommentsAnyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected]

PublishedbyInfineonTechnologiesAG81726Munich,Germany81726München,Germany©2014InfineonTechnologiesAGAllRightsReserved.

LegalDisclaimerTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

InformationForfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineonTechnologiesOffice(www.infineon.com).

WarningsDuetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,pleasecontactthenearestInfineonTechnologiesOffice.TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.


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