Infineon Technologies AG - Farnell element14 · ˇˆ˙˝ ˘ ˇ ˛ ˚ ˜˛ˇˆ !"# ˇ ˚ ˜ ˝ ˝ ˜...

MOSFETMetal Oxide Semiconductor Field Effect Transistor

CoolMOS™ C6 650V 650V CoolMOS™ C6 Power TransistorIPS65R1K4C6

Data SheetRev. 2.0Final

Industrial & Multimarket

2

650V CoolMOS™ C6 Power Transistor

IPS65R1K4C6

Rev. 2.0, 2012-07-06Final Data Sheet

IPAK SL

drainpin 2

gatepin 1

sourcepin 3

1 DescriptionCoolMOS™ is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) principle and pioneered byInfineon Technologies. CoolMOS™ C6 series combines the experience of theleading SJ MOSFET supplier with high class innovation. The resulting devicesprovide all benefits of a fast switching SJ MOSFET while not sacrificing ease ofuse. Extremely low switching and conduction losses make switchingapplications even more efficient, more compact, lighter and cooler.

Features• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen free mold compound• Qualified for industrial grade applications according to JEDEC (J-STD20 andJESD22)

ApplicationsPFC stages, hard switching PWM stages and resonant switching PWM stagesfor e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom andUPS.

Table 1 Key Performance ParametersParameterParameterParameterParameter ValueValueValueValue UnitUnitUnitUnit

V‡» @ TÎ ÑÈà 700 V

RDS(on),max 1.4 Â

Qg,typ 10.5 nC

ID,pulse 8.3 A

Eoss @ 400V 1.15 µJ

Body diode di/dt 500 A/µs

Type / Ordering CodeType / Ordering CodeType / Ordering CodeType / Ordering Code PackagePackagePackagePackage MarkingMarkingMarkingMarking Related LinksRelated LinksRelated LinksRelated Links

IPS65R1K4C6 PG-TO 251 65C61K4 see Appendix A

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IPS65R1K4C6


Table of ContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

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IPS65R1K4C6


2 Maximum ratingsat TÎ = 25°C, unless otherwise specified

Table 2 Maximum ratingsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Continuous drain current1) I ‡ 3.2 A T† = 25°C

2.0 T† = 100°C

Pulsed drain current2) I ‡‚ÔÛÐÙþ 8.3 A T† = 25°C

Avalanche energy, single pulse Eƒ» 26 mJ I ‡ = 0.6A, V‡‡ = 50V(see table 18)

Avalanche energy, repetitive Eƒ¸ 0.10 mJ I ‡ = 0.6A, V‡‡ = 50V

Avalanche current, repetitive I ƒ¸ 0.6 A

MOSFET dv/dt ruggedness dv/dt 50 V/ns V‡» = 0 ... 480V

Gate source voltage V•» -20 20 V static

-30 30 AC (f > 1 Hz)

Operating and storage temperature TÎ‚TÙÚÃ -55 150 °C

Continuous diode forward current I » 2.8 A T† = 25°C

Diode pulse current I »‚ÔÛÐÙþ 8.3 A T† = 25°C

Reverse diode dv/dt3) dv/dt 15 V/ns V‡» = 0 ... 400V, I »‡ ù I ‡,TÎ = 25°C(see table 16)

Maximum diode commutation speed diË/dt 500 A/µs

Power dissipation PÚÓÚ 28 W T†=25°C

1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.752) Pulse width tÔ limited by TÎ ÑÈà3) Identical low side and high side switch with identical R•

5


IPS65R1K4C6


3 Thermal characteristicsTable 3 Thermal characteristics IPAK SL

Values


Thermal resistance, junction - case RÚÌœ† 4.4 °C/W

Thermal resistance, junction - ambient1) RÚÌœƒ 62 °C/W leaded

35 SMD version, device on PCB, 6cm²cooling area

Soldering temperature, wave- &reflowsoldering allowed TÙÓÐÁ 260 °C 1.6 mm (0.063 in.) from case for

10s

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB isvertical without air stream cooling.

6


IPS65R1K4C6


4 Electrical characteristicsat TÎ = 25°C, unless otherwise specified

Table 4 Static characteristicsValues


Drain-source breakdown voltage Vñ…¸ò‡»» 650 V V•» = 0V, I ‡ = 1mA

Gate threshold voltage V•»ñÚÌò 2.5 3 3.5 V V‡» = V•», I ‡ = 0.1mA

Zero gate voltage drain current I ‡»» 1 µA V‡» = 650V, V•» = 0V, TÎ = 25°C

10 V‡» = 650V, V•» = 0V, TÎ = 150°C

Gate-source leakage current I •»» 100 nA V•» = 20V, V‡» = 0V

Drain-source on-state resistance R‡»ñÓÒò 1.260 1.4 Â V•» = 10V, I ‡ = 1.0A, TÎ = 25°C

3.280 V•» = 10V, I ‡ = 1A, TÎ = 150°C

Gate resistance R• 6.5 Â f = 1MHz, open drain

Table 5 Dynamic characteristicsValues


Input capacitance CÍÙÙ 225 pF V•» = 0V, V‡» = 100V, f = 1MHz

Output capacitance CÓÙÙ 18 pF

Effective output capacitance, energyrelated1) CÓñþØò 10 pF V•» = 0V, V‡» = 0 ... 480V

Effective output capacitance, time related2)CÓñÚØò 42 pF I ‡ = constant, V•» = 0V,

V‡» = 0 ... 480V

Turn-on delay time tÁñÓÒò 7.7 ns V‡‡ = 400V, V•» = 13V, I ‡ = 1.5A,R• = 10.2Â(see table 17)Rise time tØ 5.9 ns

Turn-off delay time tÁñÓËËò 33 ns

Fall time tË 18.2 ns

Table 6 Gate charge characteristicsValues


Gate to source charge QÃÙ 1.3 nC V‡‡ = 480V, I ‡ = 1.5A,V•» = 0 to 10V

Gate to drain charge QÃÁ 5.8 nC

Gate charge total QÃ 10.5 nC

Gate plateau voltage VÔÐÈÚþÈÛ 5.4 V

1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»

7


IPS65R1K4C6


Table 7 Reverse diode characteristicsValues


Diode forward voltage V»‡ 0.9 V V•» = 0V, I Œ = 1.5A, TÎ = 25°C

Reverse recovery time tØØ 200 ns V¸ = 400V, I Œ = 1.5A,di Œ/dt = 100A/µs(see table 16)Reverse recovery charge QØØ 0.9 µC

Peak reverse recovery current I ØØÑ 8 A

8


IPS65R1K4C6


5 Electrical characteristics diagrams

Table 8Power dissipationPower dissipationPower dissipationPower dissipation

TTTTCCCC [°C] [°C] [°C] [°C]

PP PPto

tto

tto

tto

t [W

] [

W]

[W

] [

W]

0 40 80 120 1600

5

10

15

20

25

30

Ptot=f(TC)

Max. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedance

ttttpppp [s] [s] [s] [s]

ZZ ZZth

JC

thJ

Cth

JC

thJ

C [

K/W

] [

K/W

] [

K/W

] [

K/W

]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.05

0.02

0.01single pulse

ZthJC =f(tP); parameter: D=tp/T

Table 9Safe operating areaSafe operating areaSafe operating areaSafe operating area

VVVVDSDSDSDS [V] [V] [V] [V]

I I I I DD DD

[A

] [

A]

[A

] [

A]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

I D=f(VDS); VGS>7V;TC=25°C; D=0; parameter: tp

Safe operating areaSafe operating areaSafe operating areaSafe operating area


I I I I DD DD

[A

] [

A]

[A

] [

A]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

I D=f(VDS); VGS>7V;TC=80°C; D=0; parameter: tp

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IPS65R1K4C6


Table 10Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics


I I I I DD DD

[A

] [

A]

[A

] [

A]

0 5 10 15 200

2

4

6

8

10

12

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

I D=f(VDS); Tj=25 °C; parameter: VGS

Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics


I I I I DD DD

[A

] [

A]

[A

] [

A]

0 5 10 15 200

1

2

3

4

5

6

7

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

I D=f(VDS); Tj=125 °C; parameter: VGS

Table 11Typ. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistance

I I I I DDDD [A] [A] [A] [A]

RR RRD

S(o

n)

DS

(on

)D

S(o

n)

DS

(on

) [Â

] [

Â]

[Â

] [

Â]

0 1 2 3 4 5 61

2

3

4

5

6

7

8

6 V5.5V5 V 6.5 V 7 V

10 V

RDS(on)=f(I D); Tj=125 °C; parameter: VGS

Drain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistance

TTTTjjjj [°C] [°C] [°C] [°C]

RR RRD

S(o

n)

DS

(on

)D

S(o

n)

DS

(on

)[Â

][Â

][Â

][Â

]

-60 -20 20 60 100 140 1800

1

2

3

4

98% typ

RDS(on)=f(Tj); I D=1.0 A; VGS=10 V

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IPS65R1K4C6


Table 12Typ. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristics

VVVVGSGSGSGS [V] [V] [V] [V]

I I I I DD DD

[A

] [

A]

[A

] [

A]

0 2 4 6 8 100

2

4

6

8

10

150 °C

25 °C

I D=f(VGS); VDS = 20V; parameter: Tj

Typ. gate chargeTyp. gate chargeTyp. gate chargeTyp. gate charge

QQQQgategategategate [nC] [nC] [nC] [nC]

VV VVG

SG

SG

SG

S [

V]

[V

] [

V]

[V

]

0 5 10 150

1

2

3

4

5

6

7

8

9

10

480 V120 V

VGS=f(Qgate); I D=1.5 A pulsed; parameter: VDD

Table 13Avalanche energyAvalanche energyAvalanche energyAvalanche energy


EE EEA

SA

SA

SA

S [

mJ]

[m

J] [

mJ]

[m

J]

0 50 100 150 2000

5

10

15

20

25

30

EAS=f(Tj); I D=0.6 A; VDD=50 V

Drain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltage


VV VVB

R(D

SS

)B

R(D

SS

)B

R(D

SS

)B

R(D

SS

) [V

] [

V]

[V

] [

V]

-60 -20 20 60 100 140 180550

575

600

625

650

675

700

725

750

VBR(DSS)=f(Tj); I D=1.0 mA

11


IPS65R1K4C6


Table 14Typ. capacitancesTyp. capacitancesTyp. capacitancesTyp. capacitances


CC CC [

pF

] [

pF

] [

pF

] [

pF

]

0 100 200 300 400 500 600100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS); VGS=0 V; f=1 MHz

Typ. Coss stored energyTyp. Coss stored energyTyp. Coss stored energyTyp. Coss stored energy


EE EEo

ss

os

so

ss

os

s [

µJ]

[µ

J] [

µJ]

[µ

J]

0 100 200 300 400 500 6000.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

1.80

2.00

Eoss=f(VDS)

Table 15Forward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diode

VVVVSDSDSDSD [V] [V] [V] [V]

I I I I FF FF

[A

] [

A]

[A

] [

A]

0.0 0.5 1.0 1.5 2.010-1

100

101

125 °C 25 °C

I F=f(VSD); parameter: Tj

12


IPS65R1K4C6


6 Test Circuits

Table 16 Diode characteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IDRG1

RG2

RG1 = RG2

Table 17 Switching times

VDSVGS

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

Switching times test circuit for inductive load Switching times waveform

Table 18 Unclamped inductiveUnclamped inductive load test circuit Unclamped inductive waveform

VDSID

VDS

VD

V(BR)DS

IDVDS

13


IPS65R1K4C6


7 Package Outlines

Figure 1 Outline PG-TO 251, dimensions in mm/inches

14


IPS65R1K4C6


8 Appendix A

Table 19 Related Links

• IFX C6 Product Brief:

http://www.infineon.com/dgdl/Product+Brief+600V+CoolMOS+C6+.pdf?folderId=db3a3043156fd5730115939eb6b506db&fileId=db3a304320d39d590121ca3c002f00db

• IFX C6 Portfolio:http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=ip*c6

• IFX CoolMOS Webpage:http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8

• IFX Design Tools:http://www.infineon.com/cms/en/product/promopages/designtools/index.html

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IPS65R1K4C6


Revision HistoryIPS65R1K4C6

Revision: 2012-07-06, Rev. 2.0Revision: 2012-07-06, Rev. 2.0Revision: 2012-07-06, Rev. 2.0Revision: 2012-07-06, Rev. 2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

0.9 2011-12-19 Release of target datasheet

2.0 2012-07-06 Release of final version

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuouslyimprove the quality of this document. Please send your proposal (including a reference to this document) to:[email protected]

Edition 2011-08-01Published byInfineon Technologies AG81726 München, Germany© 2011 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respectto any examples or hints given herein, any typical values stated herein and/or any information regarding the application of thedevice, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation,warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest Infineon TechnologiesOffice (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, pleasecontact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if afailure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospacedevice or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to beimplanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable toassume that the health of the user or other persons may be endangered.

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