Infineon Technologies AG - Farnell element14 · ˇˆ˙˝ ˘ ˇ ˛ ˚ ˜˛ ˇˆ!˙"# ˇ ˚ ˜ ˝ ˝...

MOSFETMetal Oxide Semiconductor Field Effect Transistor

CoolMOS™ C6 650V 650V CoolMOS™ C6 Power TransistorIPW65R037C6

Data SheetRev. 2.0Final

Industrial & Multimarket

2

650V CoolMOS™ C6 Power Transistor

IPW65R037C6

Rev. 2.0, 2011-10-13Final Data Sheet

TO-247

drainpin 2

gatepin 1

sourcepin 3

1 DescriptionCoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ C6 series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The resulting devices provide all benefits of a fast switching SJ MOSFETwhile not sacrificing ease of use. Extremely low switching and conductionlosses make switching applications even more efficient, more compact,lighter and cooler.

Features• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen free mold compound• Qualified for industrial grade applications according to JEDEC (J-STD20and JESD22)

ApplicationsPFC stages, hard switching PWM stages and resonant switching PWMstages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,Telecom, UPS and Solar.

Please note: For MOSFET paralleling the use of ferrite beads onthe gate or separate totem poles is generally recommended.

Table 1 Key Performance ParametersParameterParameterParameterParameter ValueValueValueValue UnitUnitUnitUnit

V‡» @ TÎ ÑÈà 700 V

RDS(on),max 0.037 Â

Qg,typ 330 nC

ID,pulse 297 A

Eoss @ 400V 24.5 µJ

Body diode di/dt 300 A/µs

Type / Ordering CodeType / Ordering CodeType / Ordering CodeType / Ordering Code PackagePackagePackagePackage MarkingMarkingMarkingMarking Related LinksRelated LinksRelated LinksRelated Links

IPW65R037C6 PG-TO 247 65C6037 see Appendix A

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IPW65R037C6


Table of ContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4


IPW65R037C6


2 Maximum ratingsat TÎ = 25°C, unless otherwise specified

Table 2 Maximum ratingsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Continuous drain current1) I ‡ 83.2 A T† = 25°C

52.6 T† = 100°C

Pulsed drain current2) I ‡‚ÔÛÐÙþ 297 A T† = 25°C

Avalanche energy, single pulse Eƒ» 2185 mJ I‡ = 14.4A, V‡‡ = 50V

Avalanche energy, repetitive Eƒ¸ 3.31 mJ I‡ = 14.4A, V‡‡ = 50V

Avalanche current, repetitive I ƒ¸ 14.4 A

MOSFET dv/dt ruggedness dv/dt 50 V/ns V‡» = 0 ... 480V

Gate source voltage V•» -20 20 V static

-30 30 AC (f > 1 Hz)

Power dissipation (non FullPAK)TO-247 PÚÓÚ 500.0 W T† = 25°C

Operating and storage temperature TÎ‚TÙÚÃ -55 150 °C

Mounting torque (non FullPAK)TO-247 60 Ncm M3 and M3.5 screws

Continuous diode forward current I » 72.1 A T† = 25°C

Diode pulse current I »‚ÔÛÐÙþ 297 A T† = 25°C

Reverse diode dv/dt3) dv/dt 15 V/ns V‡» = 0 ... 400V, I»‡ ù I‡,TÎ = 25°C

Maximum diode commutation speed diË/dt 300 A/µs

1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.752) Pulse width tÔ limited by TÎ ÑÈà3) VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low and high side switch with same Rg

5


IPW65R037C6


3 Thermal characteristics

Table 3 Thermal characteristics TO-247Values


Thermal resistance, junction - case RÚÌœ† 0.25 °C/W

Thermal resistance, junction - ambient RÚÌœƒ 62 °C/W leaded

Soldering temperature, wavesoldering onlyallowed at leads TÙÓÐÁ 260 °C 1.6 mm (0.063 in.) from case for

10s

6


IPW65R037C6


4 Electrical characteristicsat TÎ = 25°C, unless otherwise specified

Table 4 Static characteristicsValues


Drain-source breakdown voltage Vñ…¸ò‡»» 650 V V•» = 0V, I‡ = 1mA

Gate threshold voltage V•»ñÚÌò 2.5 3 3.5 V V‡» = V•», I‡ = 3.3mA

Zero gate voltage drain current I ‡»» 2 µA V‡» = 650V, V•» = 0V, TÎ = 25°C

50 V‡» = 650V, V•» = 0V,TÎ = 150°C

Gate-source leakage current I •»» 100 nA V•» = 20V, V‡» = 0V

Drain-source on-state resistance R‡»ñÓÒò 0.033 0.037 Â V•» = 10V, I‡ = 33.1A, TÎ = 25°C

0.086 V•» = 10V, I‡ = 33.1A,TÎ = 150°C

Gate resistance R• 0.7 Â f = 1MHz, open drain

Table 5 Dynamic characteristicsValues


Input capacitance CÍÙÙ 7240 pF V•» = 0V, V‡» = 100V, f = 1MHz

Output capacitance CÓÙÙ 380 pF

Effective output capacitance, energyrelated1) CÓñþØò 270 pF V•» = 0V, V‡» = 0 ... 480V

Effective output capacitance, time related2) CÓñÚØò 1360 pF I‡ = constant, V•» = 0V,V‡» = 0 ... 480V

Turn-on delay time tÁñÓÒò 22 ns V‡‡ = 400V, V•» = 13V,I‡ = 49.6A, R• = 1.7Â

Rise time tØ 32 ns

Turn-off delay time tÁñÓËËò 140 ns

Fall time tË 7 ns

Table 6 Gate charge characteristicsValues


Gate to source charge QÃÙ 40 nC V‡‡ = 480V, I‡ = 49.6A,V•» = 0 to 10V

Gate to drain charge QÃÁ 170 nC

Gate charge total QÃ 330 nC

Gate plateau voltage VÔÐÈÚþÈÛ 5.5 V

1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 480V2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 480V

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IPW65R037C6


Table 7 Reverse diode characteristicsValues


Diode forward voltage V»‡ 0.85 V V•» = 0V, IŒ = 49.6A, TÎ = 25°C

Reverse recovery time tØØ 1020 ns V¸ = 400V, IŒ = 49.6A,diŒ/dt = 100A/µs

Reverse recovery charge QØØ 36 µC

Peak reverse recovery current I ØØÑ 67 A

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IPW65R037C6


5 Electrical characteristics diagrams

Table 8Power dissipationPower dissipationPower dissipationPower dissipation

TTTTCCCC [°C] [°C] [°C] [°C]

PP PPtot

tot

tot

tot [W]

[W]

[W]

[W]

0 40 80 120 1600

100

200

300

400

500

600

Ptot=f(TC)

Safe operating areaSafe operating areaSafe operating areaSafe operating area

VVVVDSDSDSDS [V] [V] [V] [V]

II II DD DD [A]

[A]

[A]

[A]

100 101 102 10310-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS); TC=25 °C; D=0; parameter: tp; Vgs>7V;

Table 9Safe operating areaSafe operating areaSafe operating areaSafe operating area


II II DD DD [A]

[A]

[A]

[A]

100 101 102 10310-2

10-1

100

101

102

103

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS); TC=80 °C; D=0; parameter: tp; Vgs>7V;

Max. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedance

ttttpppp [s] [s] [s] [s]

ZZ ZZthJC

thJC

thJC

thJC [K/W

] [K/W

] [K/W

] [K/W

]

10-5 10-4 10-3 10-2 10-1 10010-3

10-2

10-1

100

0.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC =f(tP); parameter: D=tp/T

9


IPW65R037C6


Table 10Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics


II II DD DD [A]

[A]

[A]

[A]

0 5 10 15 200

50

100

150

200

250

300

35020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS); Tj=25 °C; parameter: VGS

Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics


II II DD DD [A]

[A]

[A]

[A]

0 5 10 15 200

50

100

150

200

25020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS); Tj=125 °C; parameter: VGS

Table 11Typ. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistance

IIIIDDDD [A] [A] [A] [A]

RR RRDS(on)

DS(on)

DS(on)

DS(on) [Â]

[Â]

[Â]

[Â]

0 20 40 60 80 100 120 140 1600.00

0.10

0.20

0.30

0.40

0.50

0.60

0.70

0.80

0.90

1.00

5 V 5.5 V 6 V 6.5 V 7 V

10 V

RDS(on)=f(ID); Tj=125 °C; parameter: VGS

Drain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistance

TTTTjjjj [°C] [°C] [°C] [°C]

RR RRDS(on)

DS(on)

DS(on)

DS(on)[Â]

[Â]

[Â]

[Â]

-60 -40 -20 0 20 40 60 80 100 120 140 160 1800.00

0.02

0.04

0.06

0.08

0.10

0.12

98% typ

RDS(on)=f(Tj); ID=33.1; VGS=10 V

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IPW65R037C6


Table 12Typ. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristics

VVVVGSGSGSGS [V] [V] [V] [V]

II II DD DD [A]

[A]

[A]

[A]

0 2 4 6 8 100

50

100

150

200

250

300

350

150 °C

25 °C

ID=f(VGS); |VDS|=20V;

Typ. gate chargeTyp. gate chargeTyp. gate chargeTyp. gate charge

QQQQgategategategate [nC] [nC] [nC] [nC]

VV VVGS

GS

GS

GS [V]

[V]

[V]

[V]

0 100 200 300 4000

1

2

3

4

5

6

7

8

9

10

120 V 480 V

VGS=f(Qgate); ID=49.6 A pulsed; parameter: VDD

Table 13Forward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diode

VVVVSDSDSDSD [V] [V] [V] [V]

II II FF FF [A]

[A]

[A]

[A]

0.0 0.5 1.0 1.510-1

100

101

102

103

125 °C 25 °C

IF=f(VSD); parameter: Tj

Avalanche energyAvalanche energyAvalanche energyAvalanche energy


EE EEAS

AS

AS

AS [mJ]

[mJ]

[mJ]

[mJ]

0 50 100 150 2000

500

1000

1500

2000

2500

EAS=f(Tj); ID=14.4 A; VDD=50 V

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IPW65R037C6


Table 14Drain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltage


VV VVBR(D

SS)

BR(D

SS)

BR(D

SS)

BR(D

SS) [V]

[V]

[V]

[V]

-60 -40 -20 0 20 40 60 80 100 120 140 160 180540

560

580

600

620

640

660

680

700

720

740

760

VBR(DSS)=f(Tj); ID=1 mA

Typ. capacitancesTyp. capacitancesTyp. capacitancesTyp. capacitances


CC CC [pF]

[pF]

[pF]

[pF]

0 100 200 300 400 500 600100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS); VGS=0 V; f=1 MHz

Table 15Typ. Coss stored energyTyp. Coss stored energyTyp. Coss stored energyTyp. Coss stored energy


EE EEoss

oss

oss

oss [µJ]

[µJ]

[µJ]

[µJ]

0 100 200 300 400 500 6000

5

10

15

20

25

30

35

40

45

50

Eoss=f(VDS)

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IPW65R037C6


6 Test Circuits

Table 16 Diode_characteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IDRG1

RG2

RG1 = RG2

Table 17 Switching_times

VDSVGS

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

Switching times test circuit for inductive load Switching times waveform

Table 18 Unclamped_inductiveUnclamped inductive load test circuit Unclamped inductive waveform

VDSID

VDS

VD

V(BR)DS

IDVDS

13


IPW65R037C6


7 Package Outlines

Figure 1 Outline PG-TO 247, dimensions in mm/inches

14


IPW65R037C6


8 Appendix A

Table 19 Related Links

• IFX C6 Product Brief:

http://www.infineon.com/dgdl/Product+Brief+600V+CoolMOS+C6+.pdf?folderId=db3a3043156fd5730115939eb6b506db&fileId=db3a304320d39d590121ca3c002f00db

• IFX C6 Portfolio:http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=ip*c6

• IFX CoolMOS Webpage:http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8

• IFX Design Tools:http://www.infineon.com/cms/en/product/promopages/designtools/index.html

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IPW65R037C6


Revision HistoryIPW65R037C6

Revision: 2011-10-13, Rev. 2.0Revision: 2011-10-13, Rev. 2.0Revision: 2011-10-13, Rev. 2.0Revision: 2011-10-13, Rev. 2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

1.9 2011-09-29 release of preliminary datasheet

2.0 2011-10-13 release of final datasheet

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us tocontinuously improve the quality of this document. Please send your proposal (including a reference to this document) to:[email protected]

Edition 2011-08-01Published byInfineon Technologies AG81726 München, Germany© 2011 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Withrespect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, includingwithout limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systemsare intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If theyfail, it is reasonable to assume that the health of the user or other persons may be endangered.

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