MOSFETMetal Oxide Semiconductor Field Effect Transistor

CoolMOS™ C6 600V600V CoolMOS™ C6 Power TransistorIPU60R600C6

Data SheetRev. 2.1Final

Industrial & Multimarket

2

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

IPAK

drainpin 2

gatepin 1

sourcepin 3

1 DescriptionCoolMOS™ is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS™ C6 series combines theexperience of the leading SJ MOSFET supplier with high class innovation.The resulting devices provide all benefits of a fast switching SJ MOSFETwhile not sacrificing ease of use. Extremely low switching and conductionlosses make switching applications even more efficient, more compact,lighter and cooler.

Features• Extremely low losses due to very low FOM Rdson*Qg and Eoss• Very high commutation ruggedness• Easy to use/drive• Pb-free plating, Halogen free mold compound• Qualified for industrial grade applications according to JEDEC (J-STD20and JESD22)

ApplicationsPFC stages, hard switching PWM stages and resonant switching PWMstages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server,Telecom, UPS.

Table 1 Key Performance ParametersParameterParameterParameterParameter ValueValueValueValue UnitUnitUnitUnit

V‡» @ TÎ ÑÈà 650 V

RDS(on),max 0.6 Â

Qg,typ 20.5 nC

ID,pulse 19 A

Eoss @ 400V 1.9 µJ

Body diode di/dt 500 A/µs

Type / Ordering CodeType / Ordering CodeType / Ordering CodeType / Ordering Code PackagePackagePackagePackage MarkingMarkingMarkingMarking Related LinksRelated LinksRelated LinksRelated Links

IPU60R600C6 PG-TO 251 6R600C6 see Appendix A

3

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Table of ContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

4

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

2 Maximum ratingsat TÎ = 25°C, unless otherwise specified

Table 2 Maximum ratingsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Continuous drain current1) I ‡ 7.3 A T† = 25°C

4.6 T† = 100°C

Pulsed drain current2) I ‡‚ÔÛÐÙþ 19 A T† = 25°C

Avalanche energy, single pulse Eƒ» 133 mJ I ‡ = 1.3A, V‡‡ = 50V(see table 18)

Avalanche energy, repetitive Eƒ¸ 0.20 mJ I ‡ = 1.3A, V‡‡ = 50V

Avalanche current, repetitive I ƒ¸ 1.3 A

MOSFET dv/dt ruggedness dv/dt 50 V/ns V‡» = 0 ... 480V

Gate source voltage V•» -20 20 V static

-30 30 AC (f > 1 Hz)

Operating and storage temperature T΂TÙÚà -55 150 °C

Continuous diode forward current I » 6.3 A T† = 25°C

Diode pulse current I »‚ÔÛÐÙþ 19 A T† = 25°C

Reverse diode dv/dt3) dv/dt 15 V/ns V‡» = 0 ... 400V, I »‡ ù I ‡,TÎ = 25°C(see table 16)

Maximum diode commutation speed diË/dt 500 A/µs

Power dissipation PÚÓÚ 63 W T†=25°C

1) Limited by TÎ ÑÈà. Maximum duty cycle D=0.752) Pulse width tÔ limited by TÎ ÑÈà3) Identical low side and high side switch with identical R•

5

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

3 Thermal characteristicsTable 3 Thermal characteristics IPAK

Values

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Thermal resistance, junction - case RÚÌœ† 2 °C/W

Thermal resistance, junction - ambient1) RÚÌœƒ 62 °C/W SMD version, device on PCB,minimal footprint

35 SMD version, device on PCB,6cm² cooling area

Soldering temperature, wave- &reflowsoldering allowed TÙÓÐÁ 260 °C reflow MSL

1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.PCB is vertical without air stream cooling.

6

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

4 Electrical characteristicsat TÎ = 25°C, unless otherwise specified

Table 4 Static characteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Drain-source breakdown voltage Vñ…¸ò‡»» 600 V V•» = 0V, I ‡ = 0.25mA

Gate threshold voltage V•»ñÚÌò 2.5 3 3.5 V V‡» = V•», I ‡ = 0.2mA

Zero gate voltage drain current I ‡»» 1 µA V‡» = 600V, V•» = 0V, TÎ = 25°C

10 V‡» = 600V, V•» = 0V,TÎ = 150°C

Gate-source leakage current I •»» 100 nA V•» = 20V, V‡» = 0V

Drain-source on-state resistance R‡»ñÓÒò 0.540 0.6  V•» = 10V, I ‡ = 2.4A, TÎ = 25°C

1.400 V•» = 10V, I ‡ = 2.4A, TÎ = 150°C

Gate resistance R• 17.5 Â f = 1MHz, open drain

Table 5 Dynamic characteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Input capacitance CÍÙÙ 440 pF V•» = 0V, V‡» = 100V, f = 1MHz

Output capacitance CÓÙÙ 30 pF

Effective output capacitance, energyrelated1) CÓñþØò 21 pF V•» = 0V, V‡» = 0 ... 480V

Effective output capacitance, time related2) CÓñÚØò 88 pF I ‡ = constant, V•» = 0V,V‡» = 0 ... 480V

Turn-on delay time tÁñÓÒò 12 ns V‡‡ = 400V, V•» = 13V,I ‡ = 3.0A, R• = 6.8Â(see table 17)Rise time tØ 9 ns

Turn-off delay time tÁñÓËËò 80 ns

Fall time tË 13 ns

Table 6 Gate charge characteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Gate to source charge QÃÙ 2.5 nC V‡‡ = 480V, I ‡ = 3A,V•» = 0 to 10V

Gate to drain charge QÃÁ 10.5 nC

Gate charge total QÃ 20.5 nC

Gate plateau voltage VÔÐÈÚþÈÛ 5.4 V

1) CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»2) CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 80% Vñ…¸ò‡»»

7

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Table 7 Reverse diode characteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note / Test Condition

Diode forward voltage V»‡ 0.9 V V•» = 0V, I Œ = 3.0A, TÎ = 25°C

Reverse recovery time tØØ 250 ns V¸ = 400V, I Œ = 3.0A,di Œ/dt = 100A/µs(see table 16)Reverse recovery charge QØØ 2.1 µC

Peak reverse recovery current I ØØÑ 16 A

8

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

5 Electrical characteristics diagrams

Table 8Power dissipationPower dissipationPower dissipationPower dissipation

TTTTCCCC [°C] [°C] [°C] [°C]

PP PPto

tto

tto

tto

t [W

] [W

] [W

] [W

]

0 40 80 120 1600

10

20

30

40

50

60

70

Ptot=f(TC)

Max. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedanceMax. transient thermal impedance

ttttpppp [s] [s] [s] [s]

ZZ ZZth

JC

thJC

thJC

thJC [K/W

] [K/W

] [K/W

] [K/W

]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

1010.5

0.2

0.1

0.05

0.02

0.01

single pulse

ZthJC =f(tP); parameter: D=tp/T

Table 9Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)

VVVVDSDSDSDS [V] [V] [V] [V]

I I I I DD DD [A]

[A]

[A]

[A]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

I D=f(VDS); VGS>7V; TC=25 °C; D=0; parameter: tp

Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)Safe operating area (limited by on-state resistance)

VVVVDSDSDSDS [V] [V] [V] [V]

I I I I DD DD [A]

[A]

[A]

[A]

100 101 102 10310-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

I D=f(VDS); VGS>7V; TC=80 °C; D=0; parameter: tp

9

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Table 10Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics

VVVVDSDSDSDS [V] [V] [V] [V]

I I I I DD DD [A]

[A]

[A]

[A]

0 5 10 15 200

5

10

15

2020 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

I D=f(VDS); Tj=25 °C; parameter: VGS

Typ. output characteristicsTyp. output characteristicsTyp. output characteristicsTyp. output characteristics

VVVVDSDSDSDS [V] [V] [V] [V]

I I I I DD DD [A]

[A]

[A]

[A]

0 5 10 15 200

2

4

6

8

10

12

14

20 V

10 V

8 V

7 V

6 V

5.5 V

5 V

4.5 V

I D=f(VDS); Tj=125 °C; parameter: VGS

Table 11Typ. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistanceTyp. drain-source on-state resistance

I I I I DDDD [A] [A] [A] [A]

RR RRD

S(o

n)

DS(o

n)

DS(o

n)

DS(o

n) [Â

] [Â

] [Â

] [Â

]

0 2 4 6 8 10 12 140.80

1.00

1.20

1.40

1.60

1.80

2.00

6 V5.5 V5 V 6.5 V 7 V 10 V

RDS(on)=f(I D); Tj=125 °C; parameter: VGS

Drain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistanceDrain-source on-state resistance

TTTTjjjj [°C] [°C] [°C] [°C]

RR RRD

S(o

n)

DS(o

n)

DS(o

n)

DS(o

n)[Â

][Â

][Â

][Â

]

-60 -20 20 60 100 140 1800.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

1.60

98% typ

RDS(on)=f(Tj); I D=2.4 A; VGS=10 V

10

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Table 12Typ. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristicsTyp. transfer characteristics

VVVVGSGSGSGS [V] [V] [V] [V]

I I I I DD DD [A]

[A]

[A]

[A]

0 2 4 6 8 100

5

10

15

20

150 °C

25 °C

I D=f(VGS); VDS=20 V

Typ. gate chargeTyp. gate chargeTyp. gate chargeTyp. gate charge

QQQQgategategategate [nC] [nC] [nC] [nC]

VV VVG

SG

SG

SG

S [V]

[V]

[V]

[V]

0 5 10 15 20 250

1

2

3

4

5

6

7

8

9

10

120 V 480 V

VGS=f(Qgate); I D=3 A pulsed; parameter: VDD

Table 13Avalanche energyAvalanche energyAvalanche energyAvalanche energy

TTTTjjjj [°C] [°C] [°C] [°C]

EE EEAS

AS

AS

AS [m

J] [m

J] [m

J] [m

J]

20 60 100 140 1800

25

50

75

100

125

150

EAS=f(Tj); I D=1.3 A; VDD=50 V

Drain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltageDrain-source breakdown voltage

TTTTjjjj [°C] [°C] [°C] [°C]

VV VVBR

(DSS)

BR

(DSS)

BR

(DSS)

BR

(DSS) [V

] [V]

[V]

[V]

-60 -20 20 60 100 140 180540

560

580

600

620

640

660

680

VBR(DSS)=f(Tj); I D=0.25 mA

11

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Table 14Typ. capacitancesTyp. capacitancesTyp. capacitancesTyp. capacitances

VVVVDSDSDSDS [V] [V] [V] [V]

CC CC [pF]

[pF]

[pF]

[pF]

0 100 200 300 400 500 600100

101

102

103

104

Ciss

Coss

Crss

C=f(VDS); VGS=0 V; f=1 MHz

Typ. CÓÙÙ stored energyTyp. CÓÙÙ stored energyTyp. CÓÙÙ stored energyTyp. CÓÙÙ stored energy

VVVVDSDSDSDS [V] [V] [V] [V]

EE EEoss

oss

oss

oss [µJ]

[µJ]

[µJ]

[µJ]

0 100 200 300 400 500 6000

1

2

3

4

Eoss=f(VDS)

Table 15Forward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diodeForward characteristics of reverse diode

VVVVSDSDSDSD [V] [V] [V] [V]

I I I I FF FF [A]

[A]

[A]

[A]

0.0 0.5 1.0 1.510-1

100

101

102

125 °C 25 °C

I F=f(VSD); parameter: Tj

12

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

6 Test Circuits

Table 16 Diode characteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IDRG1

RG2

RG1 = RG2

Table 17 Switching times

VDSVGS

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

Switching times test circuit for inductive load Switching times waveform

Table 18 Unclamped inductiveUnclamped inductive load test circuit Unclamped inductive waveform

VDSID

VDS

VD

V(BR)DS

IDVDS

13

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

7 Package Outlines

Figure 1 Outline PG-TO 251, dimensions in mm/inches

14

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

8 Appendix A

Table 19 Related Links

• IFX C6 Product Brief:

http://www.infineon.com/dgdl/Product+Brief+600V+CoolMOS+C6+.pdf?folderId=db3a3043156fd5730115939eb6b506db&fileId=db3a304320d39d590121ca3c002f00db

• IFX C6 Portfolio:http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=ip*c6

• IFX CoolMOS Webpage:http://www.infineon.com/cms/en/product/channel.html?channel=ff80808112ab681d0112ab6a628704d8

• IFX Design Tools:http://www.infineon.com/cms/en/product/promopages/designtools/index.html

15

600V CoolMOS™ C6 Power Transistor

IPU60R600C6

Rev. 2.1, 2012-02-02Final Data Sheet

Revision HistoryIPU60R600C6

Revision: 2012-02-02, Rev. 2.1Revision: 2012-02-02, Rev. 2.1Revision: 2012-02-02, Rev. 2.1Revision: 2012-02-02, Rev. 2.1

Previous Revision

Revision Date Subjects (major changes since last revision)

2.1 2012-02-02 Final datasheet release

We Listen to Your CommentsAny information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us tocontinuously improve the quality of this document. Please send your proposal (including a reference to this document) to:erratum@infineon.com

Edition 2011-08-01Published byInfineon Technologies AG81726 München, Germany© 2011 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Withrespect to any examples or hints given herein, any typical values stated herein and/or any information regarding theapplication of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, includingwithout limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices please contact your nearest InfineonTechnologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question,please contact the nearest Infineon Technologies Office.The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/orautomotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation andaerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systemsare intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If theyfail, it is reasonable to assume that the health of the user or other persons may be endangered.