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Group 1:

Kien Thi Thuy Linh Nguyen Thi Yen Nhi Nguyen Hoang AnhLe Trung Hieu

Teacher:

Luu Thuy Quyen

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Outline

Introduction Cement Silicates

Asbestos Carbon C

eramics Superconductors Zeolite

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S ilicon dioxide

The repeating general structural of rock, sand, dirt, SiO2 can be described as a three-dimensional network

constructed from tetrahedral cells, with four oxygen atoms

surrounding a silicon atom

Figure . S tructure of S iO2

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Two forms: Amorphous Quartz

S ilicon dioxide

Figure . Network of S iO2

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G lass

G lass is amorphous silicate, usual mixedimpurities to control desire property.

G lass is transparent.Thermal and electric conduction depend onimpurity levels.

Thermal stable and high hardness.

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G lass is made by heating silica sand and powder additives in aspecified manner

M elting point of S iO2 : 2.000 C (3.632 F). In processing of G lass, addition of compound to reduce Tm.

Additives are usual : Na2C

O3; K2C

O3.C

aC

O3 to recover dissoluble of Na2 C O3

G lass

Form oxides which become

intergrate into the S iliconstructure

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G lass

Why Glass is amorphous ??? G lass: short- range order & long-range disorder .

The impurities encourage the glass to cool to an amorphousstructure since the different-size of metal ions

Figure .S

tructure of G

lass

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G lass

Silica sand 72% Soda Ash 15%

Lime 9%Other 4%

P r tag f I gr i ts i G lass

sili a sas a ashlim

th r i gr i ts72%

15%4%

9%

Figure . Ingredient of S oda-lime glass

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M ixing and weightinginto proper proportion

Send to furnaces inhoppers

operated by natural gas heat the mixture at 1300-

1600 degrees C elsius into

soften or molten state

Glass

Figure . Process of manufacture glass

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G lassMoldin --- molten glass flows to forming machine to moldinto desire shapes

Annealin --- reheating the glass in an oven to ensure even cooling of glass for strengthening of the products

Coolin p ocess --- C ool for 30 min to an hour for safe tohandle.

G lass p oducts are then decorated, inspected again andfinally packaged and shipped to our customers.

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Applications o G lass

Figure . Application of G lass

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Q ua tz Is a kind of silicon crystallizes, a major components of

ingenous rocksThree mainly forms- quartz, tridymite,cristobalite. Depend ontemp, it exist in different formsQuartz exhibitz an important property called the piezoelectriceffect.

Figure . Quartz

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The unit cell of crystal silicon dioxide

-

+

+

-

+

-

+ = S ilicon

- = Oxygen

By definition : A unit cell is the s mallest parallele pi ped(6 sided parallelo gram) that will descri be the molecule .

Q ua tz

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-

+

+

-

+

-

U nit C ell at Rest-

+

+

-

+

-

Ne utral Charg e

U nit C ell U nder M echanicalC ompression ( pushing force):Electrical polarity as shown

-

+

+--

U nit C ell U nder mechanicalTension ( pulling force):Electrical polarity reverses.

+ + +

- - -

+ + +

- - -

+

Q ua tz

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-

+

+

-

+

-

-

+

+

-

+

-

+ + +

- - -

U nit C ell at Rest

Ne utral Charg e N ot caus e e l e ctric ene rgy

2 compression forces inopposite directions...

Will also r e sult i n e l e ctrical ene rgy!

Q ua tz

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Application o Q ua tz

Figure . Application of Quartz

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S ilicon c ips1958,"The C hip" was invented by both Jack

Kilby and Robert Noyce.

It is an intergrate circuit that is design to

work for an funtion or diferent purpose

Figure . S ilicon chips

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S ilicon c ips

Figure . Process of manufacture C hips

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S ilicon c ips

S iO2 + C S i + CO2

D esign Wafer:

I t is pure silic, purity

above 99,9999%

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S ilicon c ips

Treat Wafer Wet process: C lean wafers bychemical solutions. Ex:AP M (NH4OH/H2O2/H2O);HP M

(HC l/H2O2/H2O)

Oxidation: formthin layer of S iO2 ( 1-2nm)

Ion implantation :V ary the impurities.Ex: ion As to form

n+ layer

P hotolithography Sputtering

Anealing Treat surface

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Process of manufacture chip is multistepsThe purity is above 99,9999% or impurity

level is 1ppb

S ilicon c ips