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inst.eecs.berkeley.edu/~ee241b Borivoje Nikolić EE241B : Advanced Digital Circuits Lecture 18 – Power-Performance Tradeoffs EECS241B L18 LOW POWER DESIGN 1 Micron Exits 3D XPoint Market, Eyes CXL Opportunities Company looking at other technologies to build out a cost- effective memory hierarchy. Micron Technology’s exit from the 3D XPoint market should come as little surprise. The memory maker’s decision follows on several years of not talking much about a technology it jointly developed with Intel Corp. Launched with a great deal of fanfare in July 2015, 3D XPoint sparked a lot of conversation about what the new class of memory technology might be able to do, as well as what it actually was. By Gary Hilson, EETimes, 03.25.2021
Transcript
PowerPoint PresentationEECS241B L18 LOW POWER DESIGN 1
Micron Exits 3D XPoint Market, Eyes CXL Opportunities Company looking at other technologies to build out a cost- effective memory hierarchy. Micron Technology’s exit from the 3D XPoint market should come as little surprise. The memory maker’s decision follows on several years of not talking much about a technology it jointly developed with Intel Corp. Launched with a great deal of fanfare in July 2015, 3D XPoint sparked a lot of conversation about what the new class of memory technology might be able to do, as well as what it actually was.
By Gary Hilson, EETimes, 03.25.2021
EECS241B L18 LOW POWER DESIGN 2
Outline
4.J 6T SRAM Alternatives
WWL
WBL
L. Chang, VLSI Circuits 2005
• Dual-port read/write capability (register-file-like cells)
• N0, N1 separates read and write • No Read SNM constraint • Half-selected cells still undergo read
• Stacked transistors reduce leakage
eDRAM
• Process cost: Added trench capacitor
Barth, ISSCC’07, Wang, IEDM’06 EECS241B L18 LOW POWER DESIGN 6
Crosspoint Memories • Barrett, IRE Trans. Comp. 1961.
EECS241B L18 LOW POWER DESIGN 7
Crosspoint Memories
• Neale, Nelson, Moore, Electronics’70 • 16 x 16 array (256b) of ‘read-mostly memory’
EECS241B L18 LOW POWER DESIGN 8
Crosspoint Memory
3D Crosspoint Arrays
• Yeh, JSSC’15
Ou, JSSC’11
Kau, IEDM’09
Crosspoint Arrays
In the News…
Optane DDR
5. Low-Power Design
Importance of Power Awareness • Energy: Crucial for Portable Applications
• Determines battery lifetime
• Performance is what sells products
• Power: Crucial for High-Performance Applications • Determines cooling and energy costs
• Most designs today are power limited
• Still need maximum performance
The Old Design Philosophy
• Maximum performance is primary goal • Minimum delay at circuit level
• Architecture implements the required function with target throughput, latency
• At circuit level, supplies, thresholds set to achieve maximum performance, subject to reliability constraints
• Performance achieved through optimum sizing, logic mapping, architectural transformations
EECS241B L18 LOW POWER DESIGN 16
Constant Field Scaling Model
While slowing down voltage scaling
EECS241B L18 LOW POWER DESIGN 17
2001 Picture: Power As a Problem
5KW 18KW
1.5KW 500W
4004 800880808085
8086 286
386 486
Pentium® proc
Po w
er (W
at ts
S. Borkar
The New Design Philosophy
• Maximum performance is too power-hungry, and/or not even practically achievable
• Extract maximum performance under a power/energy envelope
• Excess performance (as offered by technology) to be used for energy/power reduction
Trading off speed for power EECS241B L18 LOW POWER DESIGN 19
5.A Power and Energy Basics
20EECS241B L18 LOW POWER DESIGN
Portability: Battery Limits
• Little change in basic technology • store energy using a chemical reaction
• Battery capacity doubles every 10 years • Has slowed down
• Energy density/size, safe handling are limiting factor
Energy density of material
Energy density of material
First Commercial Use
NiCd SLA NiMH Li-Ion Reusable Alkaline
Li- Polymer
Chart2
1950
1955
1960
1965
1970
1975
1980
1985
1990
1991
1992
1995
2001
5.B Power-Performance Tradeoffs
Know Your Enemy
• Switching (dynamic) power • Charging capacitors
• Leakage power • Transistors are imperfect switches
• Short-circuit power • Both pull-up and pull-down on during transition
• Static currents • Biasing currents
Summary of Power Dissipation Sources
• α – switching activity
• CL – load capacitance
• CCS – short-circuit “capacitance”
• Vswing – voltage swing
powerstaticrate operation energyP +×=
CMOS Performance Optimization • Reminder - sizing: Optimal performance with equal fanout per stage
• Extendable to general logic cone through ‘logical effort’
• Equal effective fanouts (giCi+1/Ci) per stage
• Optimal fanout is around 4
CL
CL
predecoder
word driver
addr input
word line
[Ref: I. Sutherland, Morgan-Kaufman‘98]EECS241B L18 LOW POWER DESIGN 27
Performance Optimization
Performance Optimization
Achieve the highest performance under the power cap
Delay
Achieve the highest performance under the power cap
Delay
Achieve the highest performance under the power cap
Delay
How far away are we from the optimal solution?
Delay
Global optimum – best performance
Minimize energy for given throughput
Delay
topology A
• There are many sets of parameters to adjust • Tuning variables
• Circuit (sizing, supply, threshold)
• Micro-architecture (parallel, pipelined)
Power-Performance Optimization
• There are many sets of parameters to adjust • Tuning variables
• Circuit (sizing, supply, threshold)
• Micro-architecture (parallel, pipelined)
EECS241B L18 LOW POWER DESIGN 37
topology A
Delay
D0
Solution: Equal Sensitivities
Next Lecture
EE241B : Advanced Digital Circuits Lecture 18 – Power-Performance Tradeoffs
Announcements
Outline
The New Design Philosophy
Portability: Battery Limits
CMOS Performance Optimization

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