Integration of Cooling Function into 3-D Power Module Packaging Zhenxian Liang Power Electronics and Electric Machinery Group OAK RIDGE NATIONAL LABORATORY 2360 Cherahala Boulevard Knoxville, Tennessee 37932 TEL: (865) 946-1467 FAX: (865) 946-1262 EMAIL: [email protected]http://peemrc.ornl.gov APEC 2014_ Industrial Session_3-D Power Packaging March 20, 2014 This presentation does not contain any proprietary, confidential, or otherwise restricted information
Transcript
Integration of Cooling Function into 3-D Power Module Packaging
Zhenxian Liang
Power Electronics and Electric Machinery Group OAK RIDGE NATIONAL LABORATORY 2360 Cherahala Boulevard Knoxville, Tennessee 37932 TEL: (865) 946-1467 FAX: (865) 946-1262 EMAIL: [email protected] http://peemrc.ornl.gov
APEC 2014_ Industrial Session_3-D Power Packaging March 20, 2014
This presentation does not contain any proprietary, confidential, or otherwise restricted information
Power Electronics Packaging Functions Power Electronics Packaging Assessment Advancement of 3-D Power Electronics Packaging Integration
Development of Integrated Cooling Packaging Power Electronics Packaging Thermal Performance Characterization Integrated packaging I: Pin_fin Baseplate Integrated packaging II: Cold-Baseplate
Integration of Cooling Function into 3-D Power Module Packaging Planar-Bond-All: 3-D Power Module Packaging Process Integration 3-D Packaging of Cooling and Power Modules
Summary
3
Power Module Passive Component
Control and Drive Boards Sensors
Power Electronics System
Power Electronics Packaging: Assembly of Multiple Components
Cold Plate
Vdc M
Iw Iv Iu
Gate Drive Controller
C
Power Semiconductor Module
Capacitor Power Supply
Load
4
Courtesy of ABB
Power Module Multiple Power
Semiconductor Devices Integration
Monitoring and Protection Electrical Interconnection Cooling (Thermal
Management) Thermo-mechanical and
Mechanical Support
Power Electronics Packaging: Multi-function Integration
5
Discrete Components Hierarchical Electrical
Interconnection Interfacial Thermal
Management Complicated Manufacture
Power Electronics Packaging: State-of-the-Art
Cost Performance Power Density Reliability
6
Power Electronics Packaging: Technical Metrics
Electrical Parasitics
0.44 mΩ
11.3 nH14.4 nH
Positive
7 mΩ19.6 nH
Negative
Neutral
7 mΩ19.6 nH
0.33 mΩ
0.17 mΩ0.18 mΩ7.3 nH 6.5 nH
0.44 mΩ11.3 nH14.4 nH
0.33 mΩ
0.17 mΩ0.18 mΩ7.3 nH 6.5 nH
Conduction
Switching
Thermal Impedance
R1
R3
R2
R4
R5
C1
C2
C3
C4
C5
Ta
Tj
Thermal-mechanical Property
Power Conversion Performance
)/exp()1(Re
)()1($
/)Pr(1
,
maf
aj
spja
kTETaTj
Nliability
TTBA
kWCost
PinpPlpPswPconEfficiency
⋅−
⋅=→
−
⋅−⋅+=→
+++−=→
βα
θηη
7
3-D Power Electronics Packaging: Schemes for Integration
Built-in Passives and Circuitry
Embedded or Stacked Power Semiconductor
Reduced Electrical Interconnection
Cost-effective Manufacturability
Embedded Sensors and Monitoring
Integrated Electronics
Integral Efficient Cooling
8
Outline Introduction
Power Electronics Packaging Functions Power Electronics Packaging Assessment Advancement of 3-D Power Electronics Packaging Integration
Development of Integrated Cooling Packaging Power Electronics Packaging Thermal Performance Characterization Integrated packaging I: Pin_fin Baseplate Integrated packaging II: Cold-Baseplate
Integration of Cooling Function into 3-D Power Module Packaging Planar-Bond-All: 3-D Power Module Packaging Process Integration 3-D Packaging of Cooling and Power Modules
Summary
9
Power Electronics Packaging: Thermal Performance Characterization_Experimental
1.0E-3
1.0E-2
1.0E-1
1.0E+0
1.0E+1
0 1 2 3 4 5 6Ther
mal
Tim
e C
onst
ant (
S)
Order Number
Dissipation Current Ip Measurement
current Im
Heating Phase
Cooling Phase
Ice
Vce
Tj
Vce
Temperature (Tj)
Calibration Curve
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3-D Thermal Model of Power Module with Cooler
IGBT, Diode Power loss; Coolant flow rate; Pressure Drop;
Coolant inlet temperature; Single- or Double-sided cooling.
Power Electronics Packaging: Thermal Performance Characterization_Simulation
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Ther
mal
Res
istiv
ity o
f lay
er
(Kcm
2 /W)
0.3
0
0.2
0.1
Material Layer in Package
Thermal Grease
Cu Baseplate
Solder
DBC Cu
DBC Cu
DBC Ceramic
Solder Si Die
Thermal Resistance In State of the Art Power Module Assembly
Thermal Network
R1
R3
R2
R4
R5
C1
C2
C3
C4
C5
Ta
Tj
12 Managed by UT-Battelle for the U.S. Department of Energy
188 105 180 170 160 140 150 120 130 110
Integrated Cooling Packaging I: Pin-fin Baseplate
Insulated Substrate (DBC)
Baseplate with pin fin
Die
Cold plate element
Wirebond Integrated SingleCooling
Specific ThermalResistance
(°C×cm2/W)0.541 0.470
0.42
0.44
0.46
0.48
0.5
0.52
0.54
0.56
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Integrated Cooling Packaging II: Cold-baseplate
14
Thermal Performance Characterization
Thermal Resistance Comparison
y = -2.45x + 900.25 R² = 0.9988
720
740
760
780
800
820
840
860
0 20 40 60 80
Temperature (°C)
Vf (m
V)
Vf-T calibration curve of body diode in SiC MOSFET
-1
-0.95
-0.9
-0.85
-0.8
-0.75
-0.7
0 20000 40000 60000 80000 100000
Vf (V
)
Time (µS) Vf decay of body diode in SiC MOSFET during cooling down
CFD Simulation: Temperature distribution in
an Integrated SiC power module
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SiC Module 1 SiC Module 2
Performance Evaluation in a High Frequency Converter
100A/1200V SiC Power Modules: Conventional packaging (left); Integrated cooling packaging (right)
Two 100A/1200V SiC Power Modules in a HF (48KHz) converter: Converter packaging (left); Waveforms (right)
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Current density allowed for different power semiconductor and cooling combinations at ∆Tj=100°C for a typical operation (D=0.5, ƒ=5kHz)
Current Density Jd (A/cm2) 65.35 144.97 97.57 184.98
Performance Estimation in a System
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Outline Introduction
Power Electronics Packaging Functions Power Electronics Packaging Assessment Advancement of 3-D Power Electronics Packaging Integration
Development of Integrated Cooling Packaging Power Electronics Packaging Thermal Performance Characterization Integrated packaging I: Pin_fin Baseplate Integrated packaging II: Cold-Baseplate
Integration of Cooling Function into 3-D Power Module Packaging Planar-Bond-All: 3-D Power Module Packaging Process Integration 3-D Packaging of Cooling and Power Modules
Summary
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Planar Bond All Integrated Power Module
3-D, Planar Power Interconnection Integrated, Double Sided Cooling Symmetrically Mechanical Structure Simplified Manufacture Power Semiconductors stage
Integrated Advanced Cooler
Integrated Advanced Cooler
*Patent Pending: Pub No: 2013/0020694 A1
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Develop Integration Packaging Process Technology
*Patent Pending: Pub No: 2013/0020694 A1
Wire Bond Packaging
1 Substrate Preparation
3 Substrate Attach
2 Die Attach 4 Terminal Frame Attach
5 Wire Bond 6 Encapsulate 7 assembly
Planar_Bond_All*
20
Patent Pending: Pub No. 2013/0020694 A1
Planar Bond Power Module Stage
Double Cooled Power Module Electrical Connection
Bare Semiconductor Dies
Prototype: Planar_Bond_All Power Modules
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0
50
100
150
200
250
300
350
400
0 0.5 1 1.5 2 2.5
Ice
(A)
Vce (V)
IGBT I-V Curve
WireBond,
PlanarBond
Inductance (nH) Experimental Value Calculated Value
Planar Bond_Lower IGBT 10.5 6.3
Wire Bond-Lower IGBT 31.9 23.5
Electrical Performance Characterization
050100150200250300350400450500
020406080
100120140160180200
0 500 1000 1500 2000
Volta
ge (V
)
Cur
rent
(A)
Time (nS)
∆Vce(WB)=156V ∆Vce(PB)=72V
Ice Vce
IGBT Switching Curve
Electrical Parameters Comparison
Planar Bond Module
Wire Bond Module
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Thermal Performance Characterization
WirebondIntegrated
SingleCooling
Planar_Bond_All
Specific ThermalResistance(°C×cm2/W)
0.541 0.470 0.334
0
0.1
0.2
0.3
0.4
0.5
0.6
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Design of 3-D Packaging of Cooling and Power Modules
Flow rate: 0.5 gpm, pressure drop: 22 psi 0.291 ⁰C/W for center module
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Summary Advance power module packaging technologies, focusing on improvements in cost, reliability, power efficiency and density through structure, material and processing integration.
A group of power modules with double sided planar interconnections and integrated heat exchangers has been prototyped.
Their three dimensional power interconnection configuration has been proven to offer low parasitic electric inductance and resistance, leading to high efficiency power conversion
The double sided cooling reduces dramatically thermal resistance. Additionally, the package allows for ease of fabrication and low manufacturing costs.
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Research sponsored by the Advanced Power Electronics and Electric Motors Program, DOE Office of Vehicle Technologies, under contract DE-AC05-00OR22725 with UT-Battelle, LLC.
