Intelligent Epitaxy Technology, Inc.2006
Intelligent Epitaxy Technology, Inc.
Company Information
IntelliEPI1250 E. Collins Blvd.
Richardson, TX 75081USA
E-mail: [email protected] Site: www.IntelliEPI.com
Japanese Agent: ATN JapanE-mail: [email protected] Site: www.ATNJapan.com
Intelligent Epitaxy Technology, Inc.2006
Company Information Update• Facility and Products• Capabilities and in-situ monitoring technology
Selected Product Highlights• HBT Activities (InP-based HBT, HBT w/ GaAaSb base)• PIN & QWIP
RecognitionsSummary
IntelliEPI: Outline
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: The Company
• A Texas semiconductor manufacturing company located in Richardson, TX, since January 1999
• Founded by Dr. Yung-Chung Kao (from TI), Dr. Paul Pinsukanjana (from JPL/UCSB), and 2 co-founders (TI), combining experiences in electronics and optoelectronics
MissionTo serve the III-V semiconductor industries with proprietary MBE
growth monitoring and manufacturing know-how to fabricate best-valued epitaxial wafers for wireless telecommunication and
optoelectronics applications
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Facility at Richardson, Texas
Current facility since January 2002: 1250 E. Collins, Richardson, TX • 23,000 ft2 (production: 13,000 ft2; Office: 10,000 ft2)• Currently hosts 7 MBE systems (Set up for 8 production systems)• Class 100 clean room for post growth testing and Large Area
Device processing
Intelligent Epitaxy Technology, Inc.2006
MBE Facility at IntelliEPI’s Facility in Richardson, Texas
• 7 MBE reactors:– One Riber 7000 (7x6”, 14x4”)– Three Riber 6000 (4x6”, 9x4”, 15x3”)– Three Riber 49 (4x4”, 5x3”)
• Dedicated operation and cleaning facilities designed to handle phosphorous for all 7 MBE systems
Riber 7000
Intelligent Epitaxy Technology, Inc.2006
Post-growth Characterization Capability• Class 100 clean room:
(2000 ft2)
• Characterization tools: – X-ray diffraction– PL mapping– Surface particle scan– Hall measurement– Contactless resistivity mapping– Electro-chemical CV profiling– White light reflection
spectrometer– Electrical CV profiling– Mercury probe CV
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Current Available Products
RF and microwave
High Speed Digital
Optoelectronics
Applications
• RF components in handsets
• Automotive radar
• Defense related
• OC768- 40Gbps network
• OC192-10Gbps network
• Fiber optic network light sources and Photo-detectors
Device Structure
(Red in Production mode)
• GaAs pHEMT • GaAs mHEMT • InP HEMT • InP HBT
• InP HBT • InP HEMT • GaAs mHEMT • GaAsSb DHBT • GaAs mHBT
• GaAs PIN • InP PIN/APD • QWIP • VCSEL • 980 pump laser
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Thickness Uniformity Across Platen for 7x6” MBE
• Thickness variation across platen < 1% across 7X6” platen configuration• Si doping GaAs layer uniformity by contactless resistivity mapping:
– 6” wafer doping variation < 1%– Difference from center wafer to outside wafer < 0.5%
2,500Å GaAs
2,000Å AlAs
GaAs substrate
7X6” platen
Riber 7000 thickness uniformitymeasured by white light reflection
97.0
98.0
99.0
100.0
101.0
102.0
103.0
0 50 100 150 200 250Platen radial position (mm)
Nor
mal
ized
thic
knes
s (%
)
GaAl
Center wafer Outside wafer
Intelligent Epitaxy Technology, Inc.2006
CBr4 Carbon Doping of P-type InGaAs
Sheet resistance measurement using Lehighton showsthe resistivity across 4” wafer grown from a 4x4 MBE system. The epi layer is a 350 nm thick InGaAs doped at 4e19 cm-3.
2 10193 10194 1019
5 10196 10197 10198 1019
9 10191 1020
0 2 10-8 4 10-8 6 10-8 8 10-8
CBr4
CBr4 BEP (Torr)
0.0 2 1019 4 1019 6 1019 8 1019 1 102030
40
50
60
70
Condition 1Condition 2Condition 3
Hole concentration (cm-3)
Intelligent Epitaxy Technology, Inc.2006
Production MBE Operation Improvement by In Situ Sensors
• Run-to-run reproducibility:– Maintaining critical specification ranges– Verification of growth process details (condition and layers)
• Limitations of ex-situ characterization:– Slow post-growth feedback– Additional wafer handling and cost– Limited information about growth condition profile vs. epi-depth
• New product development:– Faster development cycle time– Improved performance for more demanding specifications
• Bad run detection/correction/termination:– Loss of wafers: very expensive for larger systems and for InP– Wasted machine time, materials, & operating expenses
Intelligent Epitaxy Technology, Inc.2006
Overview of IntelliEPI in-situ Sensor Technologies• Substrate temperature
– Pyrometry– Absorption Band-Edge Spectroscopy
(ABES): band-gap dependence on temp
• Materials composition– Optical-based Flux Monitor (OFM):
atomic absorption of group III fluxes
• Growth rate– Optical Reflectometry– Pyrometric Interferometry
ABES light source:Light pipe, orHeater filament
Optical Pyrometer
Optical Reflectometry
OFM
OFM setup
Absorption Band-Edge Spectroscopy,Pyrometer, and
Laser Reflection.
Intelligent Epitaxy Technology, Inc.2006
PHEMT In-situ Composition Monitoring with OFM
• Direct composition monitoring for each critical layer• In-situ composition monitoring for key layers:
– InGaAs Channel: Accurate x-ray measurement– AlGaAs Gate: X-ray represents average of SL and Gate– InGaP Etch Stop: Very thin layer limits x-ray accuracy
0
10
20
30
2000 2500 3000 3500
AlGaIn
atom
ic a
bosr
ptio
n (%
)
time (sec)
30348D
n+ GaAs Cap
n InGaP Etch Stop
n AlGaAs Gate
AlGaAs Spacer
InGaAs Channel
AlGaAs Spacer
AlGaAs
GaAs
AlGaAs
GaAs Buffer
GaAs Substrate
SL
Si - delta
PHEMT Structure
OFM Profile During PHEMT Growth
AlGaAsGate
InGaPEtchStop
InGaAsChannel
GaAs/AlGaAsSL
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: InP SHBT/DHBT StatusStrong Customer Base Facilitates Fast Structure Optimization• US and Japan foundries and companies• Both C and Be doped SHBTs and DHBTs• HBT-PIN and HBT-Opto structure integration
In-House Large Area Device (LAD) Fabrication Capability• Fast turn around (~8 hours)• Correlation with customers device characteristics• CV measurements for device fine tune• Correlation with in-house in situ growth database
Developed GaAsSb-base HBT under DARPA TFAST Program• GaAsSb-base up to 1e20 cm-3 carbon doping
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: InP-HBT Experience HighlightsPohang University of Science and Technology (POSTECH): InP-HBT results• Fmax = 689 GHz (Postech/IntelliEPI, IEDM, San Francisco, December 2004)
University of Illinois, Urbana Champaign: InP-HBT results• Most recent data: Ft = 710 GHz (Hafez et al. Appl. Phys. Lett., 87, 2005)
Vitesse: IntelliEPI is the epi materials supplier for all the InP efforts• High level of integration VIP-1 SHBT: ~5000 transistors inside 3 mm square die• 100% transistor yield for VIP-2 DHBT: over 450 GHz Ft and Fmax (DARPA – TFAST)
IntelliEPI works with several companies in US, Japan, and Taiwan to explore the PA applications using InP DHBTs
Emitter
Base
Collector
0.25 µm
Emitter
Base
Collector
0.25 µm
Intelligent Epitaxy Technology, Inc.2006
InP/InGaAs SHBT with High Base doping DC Characteristics
Layer comment Material Thickness (Å)
Dopant Level (/cm3)
7 InGaAs:Si In(x)Ga(1-x)As 500 Si 2.00E+196 InP :Si InP 500 Si 1.0E+195 InP :Si InP 500 Si 5.0E+174 InGaAs :C In(x)Ga(1-x)As 400 C 8.0E+193 InGaAs :Si In(x)Ga(1-x)As 2,000 Si 2.0E+162 InP :Si InP 100 Si 2.00E+191 InGaAs :Si In(x)Ga(1-x)As 4,000 Si 2.00E+19
Substrate InP
Gain vs Current Density
0
5
10
15
20
25
30
1.E+00 1.E+01 1.E+02 1.E+03 1.E+04
Current Density(A/cm2)
Cur
rent
Gai
n
1E-11
1E-09
1E-07
1E-05
1E-03
1E-01
1E+01
0.0 0.5 1.0Vbe (V)
Cur
rent
(A)
ICIB
Gummel Plots
• Current Gain24 @ 10A/cm2, 25 @ 100A/cm2,26 @ 1kA/cm2
• Base Rbs (TLM)406 Ohm/sq
• Current cross-over< 1.0E-9 A
• Von @ 5A/cm2542 mV
Intelligent Epitaxy Technology, Inc.2006
X-ray data of GaAsSb uniformity across 4x4” platen
-1500 -1000 -500 0 500 1000 1500
Diffaction Angle (arc-sec)
Inte
nsity
(arb
uni
ts)
r = 118.5 mmr = 113.5 mmr = 98.5 mmr = 78.5 mmr = 58.5 mmr = 43.5 mmr = 38.5 mm
Center of Platen
Outside of platen
0.490
0.495
0.500
0.505
0.510
0.515
0.520
0 50 100Position on Platen (mm)
Sb C
ompo
sito
n (x
)
4 X 4" platen
5 X 3" platen
• GaAsSb composition uniformity is within ±0.1 atomic percent across 4x4” platen
4”
11
Intelligent Epitaxy Technology, Inc.2006
• Current Gain34.3 @ 10A/cm2, 36.6 @ 100A/cm2,38.1 @ 1kA/cm2
• Base Rbs (TLM)885.9 Ohm/sq
• Current cross-over< 1.0E-9 A
• nc = 1.10; nb = 1.29
InAlAs emitter GaAsSb DHBT (Improved E-B junction )
InAlAs/GaAsSb/InP DHBT DC characteristics
1.0E-091.0E-081.0E-071.0E-061.0E-051.0E-041.0E-031.0E-021.0E-01
0.0 0.5 1.0 1.5Vbe (V)
Cur
rent
(A)
ICIB
I-V Characteristics, 50x50 um 2
0.0E+002.0E-034.0E-036.0E-038.0E-031.0E-021.2E-021.4E-021.6E-021.8E-022.0E-02
0.0 2.0 4.0Vce (V)
Ic (A
)
Layer Comment Material x Thick. (Å) Dop. Level (/cm3)
Type
8 Emitter cap In(x)Ga(1-x)As 0.532 1,000 Si 3.0E+19 N+7 Emitter cap InP 300 Si 5.0E+18 N+6 Emitter InP 300 Si 5.0E+17 N5 Emitter In(x)Al(1-x)As 0.522 150 Si 5.0E+17 N4 Base GaAs(1-x)Sb(x) 0.513 400 C 4.5E+19 P+3 Collector InP 2,000 Si 3.0E+16 N2 Subcollector 1 InP 500 Si 5.0E+18 N1 Etch stop In(x)Ga(1-x)As 0.532 2,000 Si 3.0E+19 N+
Substrate
Intelligent Epitaxy Technology, Inc.2006
• Gain18.8 @ 10A/cm2,20.5 @ 100A/cm2,22.1 @ 1kA/cm2
• Base Rbs (TLM)956.4
• Current cross-over1.0E-9 A
• nc =1.08; nb = 1.30
InAlAs emitter GaAsSb DHBT (Thin Base/Heavy Doping )
InAlAs/GaAsSb(1E20 cm-3)/InP DHBT DC Characteristics
Layer Comment Material x Thick. (Å) Dop. Level (/cm3)
Type
8 Emitter cap In(x)Ga(1-x)As 0.532 1,000 Si 3.0E+19 N+7 Emitter cap InP 300 Si 5.0E+18 N+6 Emitter InP 300 Si 1.0E+18 N5 Emitter In(x)Al(1-x)As 0.532 150 Si 1.0E+18 N4 Base GaAs(1-x)Sb(x) 0.513 200 C 1.0E+20 P+3 Collector InP 2,000 Si 3.0E+16 N2 Subcollector 1 InP 500 Si 5.0E+18 N1 Etch stop In(x)Ga(1-x)As 0.532 2,000 Si 3.0E+19 N+
Substrate
1.0E-091.0E-081.0E-071.0E-061.0E-051.0E-041.0E-031.0E-021.0E-01
0.0 0.5 1.0 1.5
Vbe (V)
Cur
rent
(A)
ICIB
I-V Characteristics, 50x50 um 2
0.0E+00
2.0E-03
4.0E-03
6.0E-03
8.0E-03
1.0E-02
1.2E-02
0.0 2.0 4.0 6.0Vce (V)
Ic (A
)
Intelligent Epitaxy Technology, Inc.2006
Low Intrinsic Background InGaAs on InP
IntelliEPI’s optimized MBE PIN advantages:• Nearly depleted at 0V bias• Background doping level better than
MOCVD• Intrinsic InGaAs mobility from 10 –
12x103 cm2/V·sec
0
0.05
0.1
0.15
-10-8-6-4-202
MOCVDTypical MBEOptimized MBE
Cap
/Are
a (fF
/µm
2 )
V bias (V)
1013
1014
1015
1016
1017
5000 1 104 1.5 104 2 104 2.5 104
Ne (c
m-3
)
Depletion Depth (Å)
CV profile comparison CV Doping profile vs. depth
P+ layer (InP)
i-layer (2um InGaAs)
N+ layer (InP)InP substrate
5,000
7,000
9,000
11,000
13,000
15,000
1.00E+14 1.00E+15 1.00E+16Electron Concentration (cm-3)
Hal
l Mob
ility
(cm
2 /Vs) IET typical conditions
IET optimized conditionsPublished data from MBEPublished data from MOCVD
Comparison of InGaAs Hall Mobility
Intelligent Epitaxy Technology, Inc.2006
High Speed InGaAs/InP PIN Photodetector from MBE
• Average 3 dB bandwidth of ~ 4.6 GHz @ –2V• Dark current well below 1 nA @ –2V
1.E-10
1.E-09
1.E-08
0 5 10 15 20 25 30Reverse bias voltage (V)
Dar
k cu
rren
t (A
)
0.80.820.840.860.880.9
0.920.940.960.98
1
-5-4-3-2-10Applied voltage (V)
Res
pons
ivity
(A/W
)
0C40C80C120C
0.E+00
2.E+09
4.E+09
6.E+09
8.E+09
-5-4-3-2-10Applied voltage (V)
Freq
uenc
y (H
z)
40C
0200400600800
10001200
2.0
2.4
2.8
3.2
3.6
4.0
4.4
4.8
5.2
5.6
6.0
3dB Bandwidth (GHz)
Num
ber o
f Res
ults
Standard I-layer Doping
Improved I-layer Doping
Data Courtesy
ofVITESSE
75 µm Diameter Active Area
Dark Current
Photo response @ 1550 nm
3 dB Bandwidth @ 1550 nm
3 dB Bandwidth Histogram Across 4” Wafer
Bias@ –2V
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: QWIP Production Experience
• Stability of growth rate during long repeated structure as indicated by narrow x-ray peaks
• Excellent interface and materials quality as indicated by sharp x-ray peaks• ±0.5% thickness uniformity across 6 inch diameter wafer based on x-ray• Achieved 100% pixel yield with 320x256 format FPA
Riber60004x6” Platen
Courtesy of QmagiQ
8.6 µm thermal image taken with large format 640x512 QWIP FPA IntelliEPI. Die size ~16x13 mm2.1
10
100
1000
104
105
106
-4000 -2000 0 2000 4000
Platencenter6" Inner6" center6" outerC
ount
Angle (Arcsec)
10511F
004 x-ray scans across platen
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Device Data for QWIP FPA
0
0.2
0.4
0.6
0.8
1
1.2
5 6 7 8 9 10 11
Normalized Spectra
-5V-4V-3V-2V-1V
Nor
mal
ized
Inte
nsity
Wavelength (µm) 0
5
10
15
20
25
30
35
-5 -4 -3 -2 -1 0 1 2 3 4 5
Blackbody Responsivity
123456789
RB
B (mA
/W)
Bias (V)
Blackbody Source Temperature = 500 K
10 15 20 25 30 35 400
500
1000
1500
2000
2500
3000
3500
4000
NETD Value (mK)
Num
ber o
f Occ
uren
ces
NETD (mK) for 25-C Scene Temperature
mean = 22.3 mKsigma = 2.8 mKsigma/mean = 12.5%
F/4 Optics
320x256
37 38 39 40 41 42 43 440
1000
2000
3000
4000
5000
6000Photoresponse (mV/degree) @ 25 C
Photoresponse Value (mV/degree)
Num
ber o
f Occ
uren
ces
mean = 39.7 mV/K
sigma = 0.79 mV/K
sigma/mean = 2%
F/4 Optics
320x256
664400xx551122
332200xx225566
• 320x256 and 640x512 formats• LWIR band, 8.6-mm peak wavelength• Optical response uniformity ≈ 2%• Average NEDT less than 25 mK at F/4• Operability greater than 99.8%
Data Courtesy
of QmagiQ
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Dual-color QWIP
• 2-color per pixel in 320x256 format • Dual-band for MWIR and LWIR• Epi materials on 6” GaAs
Data Courtesy
of QmagiQ
Intelligent Epitaxy Technology, Inc.2006
QA/QC Procedures• SPC process is implemented to all production jobs• System Calibrations to ensure accuracy and consistency in
–Doping concentration–Growth rate and composition–Temperature control for different platens and loading –Reproducible system conditions for growth
• Incoming materials QC to ensure all substrates qualification• Final products QC to maintain consistency in epi-wafer
quality and documentation accuracy• Currently on schedule to be ISO9001 compliant in 1Q/05 and
ISO certified within 2005
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Sample SPC Charts – Total Sheet Resistivity
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Sample SPC Charts – Defect Density
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Sample SPC Charts – Haze ppm
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Customer Feedback Data Analysis (Idss)
• Very tight Idss data distribution (~3%) for 5,000 pHEMTs over 4 campaigns• Slight adjust-up based on customer preference in the latest campaign
43.442.040.639.237.836.435.033.6
System
F-01F-03
D-03D-04
Median
Mean
39.02539.00038.97538.95038.92538.900
A nderson-Darling Normality Test
V ariance 2.073Skewness -0.192924Kurtosis 0.109487N 4969
Minimum 33.800
A -Squared
1st Q uartile 37.960Median 38.9803rd Q uartile 39.960Maximum 43.880
95% C onfidence Interv al for Mean
38.885
2.61
38.965
95% C onfidence Interv al for Median
38.920 39.020
95% C onfidence Interv al for StDev
1.412 1.469
P-V alue < 0.005
Mean 38.925StDev 1.440
95% Confidence Intervals
Summary for Avg_Idss
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Customer Feedback Data Analysis (Vpinch-off)
• Vp data distribution tight (< 6%) for 4 campaigns• Very little machine/campaign dependence found in Vp data
-0.63-0.70-0.77-0.84-0.91-0.98-1.05
System
F-01F-03
D-03D-04
Median
Mean
-0.875-0.876-0.877-0.878-0.879-0.880
A nderson-Darling Normality Test
V ariance 0.00294Skewness 0.29836Kurtosis 1.23699N 3613
Minimum -1.08000
A -Squared
1st Q uartile -0.91000Median -0.880003rd Q uartile -0.84000Maximum -0.58000
95% C onfidence Interv al for Mean
-0.87915
10.12
-0.87561
95% C onfidence Interv al for Median
-0.88000 -0.88000
95% C onfidence Interv al for StDev
0.05302 0.05552
P-V alue < 0.005
Mean -0.87738StDev 0.05424
95% Confidence Intervals
Summary for MED_Vp
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: 4-Times (01-04) Supplier of the Year Award from VITESSE
• Vitesse is World’s leading InP foundry
• All Vitesse’s 10G and 40G InP circuits (HBT and PIN) are solely based on IntelliEPI’s epi-wafers
• IntelliEPI supplies all InP epi-wafers for production and development
• IntelliEPI received awards due to quality, price, service, and innovation
• IntelliEPI’s in-growth sensor data is open to Vitesse processing correlation
• IntelliEPI provides 100% customer satisfaction guaranty
VITESSE SEMICONDUCTOR CORPORATION
VITESSE
741 Calle Plano Camarillo, CA 93012 Tel (805) 388-3700 Fax (805) 987- 5896
April 15, 2002
Dr. Yung-chung Kao President/CEO Intelligent Epitaxy Technology, Inc. 201 East Apapaho Road, Suite 200 Richardson, TX 75081 Dear Dr. Kao: It is my pleasure to advise you that Intelligent Epitaxy Technology, Inc. has been selected as one of eleven Suppliers of the Year for 2001.
As you may know, we have a Supplier and Subcontractor Rating Procedure in place and we use the rating results to recognize top performers. The rating definitions are Quality, Flexibility, Pricing, Customer Service and Strategic Advantage.
In past years, we have held a Supplier of the Year Dinner. However, due to the industry downturn and in order to curb expense for all of us, I would like you to accept the enclosed Plaque with my congratulations for a job well done.
It is my sincere and earnest hope that we continue to maintain this mutually beneficial relationship in the years ahead.
Sincerely,
Louis R. Thomasetta
President Chief Executive Officer c.c. Mr. Jim Fang Sales Marketing Director
Intelligent Epitaxy Technology, Inc.2006
IntelliEPI: Summary
IntelliEPI’s real-time sensors monitor growth and maintain reproducible conditions• Non-invasive; early identification of problems during run:
immediate feedback• Yield improvement, fast product development and delivery
IntelliEPI developed advanced MBE growth technology and materials• High volume GaAs product such as PHEMTs for handset switch
applications• High performance InP based HBTs and PINs for fiber optical
applicationsIntelliEPI provides 100% customer satisfaction guaranty