Full text on our homepage at; http://www.pss-c.com
Papers presented at
6th International Conference on
Nitride Semiconductors (ICNS-6)Bremen, Germany, 28 August-2 September 2005
Guest Editors: Stefan Hildebrandt, Liverios Lymperakis, Jorg Neugebauer, and Martin Stutzmann
Growth
Molecular beam epitaxy for high-efficiency nitride optoelectronics
J. Heffernan, M. Kauer, J. Windle, S. E. Hooper, V. Bousquet, C. Zellweger, and J. M. Barnes 1379-1382
Radio-frequency MBE growth of cubic GaN on BP(001)/Si(001) hetero-structure
T. Kikuchi, A. S. Somintac, M. Odawara, T. Udagawa, and T. Ohachi 1383-1387
Novel buffer layer for the growth of GaN on c-sapphireWookhyun Lee, Seogwoo Lee, Hiroki Goto, Hyunchul Ko, Meoungwhan Cho,
and Takafumi Yao 1388-1391
Critical aspects ofhigh temperature MOCVD growth ofA1N epilayers on 6H-SiC substrates
K. Balakrishnan, N. Fujimoto, T. Kitano, A. Bartdoh, M. Imura, K. Nakano, M. Iwaya,S. Kamiyama, H. Amano, I. Akasaki, T. Takagi, T. Noro, K. Shimono, T. Riemann,
and J. Christen 1392-1395
Two to three dimensional transitions ofInGaN and the impact ofGaN overgrowthT. Yamaguchi, S. Einfeldt, S. Gangopadhyay, A. Pretorius, A. Rosenauer, J, Falta,andD. Homtnel 1396-1399
Effect of growth temperature on AlGalnN layers: a TEM analysis
D. Mendez, M. Albrecht, E. Monroy, D. Jalabert, H. P. Strank, A. M. Sanchez,
and R. Garcia 1400-1403
Radio-frequency MBE growth of cubic GaN on 3C-SiC(001 )/Si(001) templateT. Ohachi, T. Kikuchi, A, Somintac, S. Yamaguchi, T. Yasuda, and M. Wada 1404-1407
Effect of carrier gas on GaN epilayer characteristics
Y. S. Cho, H. Hardtdegen, N. Kaluza, N. Thillosen, R. Steins, Z. Sofer, and H. Lttth 1408-1411
Large bandgap bowing of In.vGa| _„N films and growth ofblue/green In^Gai ^N/GaN MQWson highly tensile strained GaN/Si(l 11) hetero structures
Kang Jea Lee, Tae Su Oh, Tae Ki Kim, Gye Mo Yang, and Kee Young Lim 1412-1415
Si diffusion in epitaxial GaNRafal Jakiela, Adam Barcz, Ewa Dumiszewska, and Andrzej Jagoda 1416-1419
Doping efficiency and segregation ofSi in A1N grown by molecular beam epitaxy
V. Lebedev, F. M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok,
J. A. Schaefer, and O. Ambacher 1420-1424
p-type conduction in a C-doped (llOl)GaN grown on a 7-degree-off oriented (001)Si substrate
by selective MOVPE
T. Hikosaka, N. Koidc, Y. Honda, M. Yamaguchi, and N. Sawaki 1425-1428
1364 Contents
On the incorporation mechanism of Fe in GaN grown by metal-organic vapour phase epitaxy
R. S. Balmer, D. E. J. Soley, A. J. Simons, J. D. Mace, L. Koker, P. O. Jackson, D. J. Wallis,
M. J. Uren, and T.Martin 1429-1434
n-type conductivity control of AlGaN with high Al mole fraction
Freestanding two inch c-plane GaN layers grown on (100) y-lithium aluminium oxide
by hydride vapour phase epitaxyE. Richter, Ch. Hennig, U. Zeimer, M. Weyers, G. TrSnkle, P. Reiche, S. Ganschow, R. Uecker,
and K. Peters 1439-1443
InN-based layers grown by modified HVPE
A. Syrkin, A. Usikov, V. Soukhoveev, 0. Kovalenkov, V. Ivantsov, V. Dmitriev, C. Collins,E. Readinger, N. Shmidt, V. Davydov, S. Nikishin, V. Kuryatkov, D. Song, D. Rosenbladt,
andMarkHoltz 1444-1447
Polishing and characterization of thick A1N layers grown on SiC substrates
by stress control hydride vapor phase epitaxyH. Mank, B. Amstatt, D. Turover, E. Bellet-Amalric, B. Daudin, V. Ivantsov, V. Dmitriev,and V. Maslermikov 1448-1452
Crystallization offree standing bulk GaN by HVPE
B. Lucznik, B. Pastuszka, I. Grzegory, M. Bo6kowski, G. Kamler, J. Domagala, G. Nowak,P. Prystawko, S. Krukowski, and S. Porowski 1453-1456
Thermodynamic study on the role ofhydrogen during hydride vapor phase epitaxy of Al,Gai _^.N
H. Murakami, J. Kikuchi, Y. Kumagai, and A. Koukitu 1457-1460
Growth and doping ofAlGaN and electroluminescence of SAG-InGaN/AlGaN heterostructure
by mixed-source HVPE
K. H. Kim, H. S. Ahn, M. Yang, K. S. Jang, S. L. Hwang, W. J. Choi, C. R. Cho, S. W. Kim,
Y. Honda, M. Yamaguchi, N. Sawaki, J. Yoo, S.M.Lee, and M.Koike 1461-1465
Bowing ofthick GaN layers grown by HVPE using ELOGCh. Hennig, E. Richter, U. Zeimer, M. Weyers, and G. Trankle 1466-1470
HVPE growth of high quality GaN layersPeter Bruckner, Frank Habel, and Ferdinand Scholz 1471-1474
Bending in HVPE GaN free-standing films: effects of laser lift-off, polishingand high-pressure annealing
T. Paskova, V. Darakchieva, P. P. Paskov, B. Monemar, M. Bukowski, T. Suski, N. Ashkenov,M. Schubert, and D. Hommel 1475-1478
AlGaN epitaxial layers grown by HVPE on sapphire substrates
V. Soukhoveev, O. Kovalenkov, L. Shapovalova, V. Ivantsov, A. Usikov, V. Dmitriev,V. Davydov, and A. Smirnov 1483-1486
Growth of GaN on patterned thick HVPE free standing GaN substrates by high pressure
solution method
M. Bodkowski, I. Grzegory, G. Nowak, B. Lucznik, B. Pastuszka, G. Kamler, M. Wroblewski,P. Kwiatkowski, K. Jasik, W. Wawer, S. Krukowski, and S. Porowski 1487-1490
Contents1365
Growth ofA1N films and their characterization
Rakesh B. Jain, Ying Gao, Jianping Zhang, R. S. Qhaleed Fareed, Remis Gaska, Jiawei Li,Arulchakkravarthi Arjunan, Edmundas Kuokstis, Jinwei Yang, and M. Asif Khan 1491-1494
Specific heat calculations ofIII-N bulk materials
A. AlShaikhi and G. P. Srivastava 1495-1498
Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layersP. P. Paskov, R. Schifano, T. Malinauskas, T. Paskova, J. P. Bergman, B. Monemar, S. Figge,D. Hommel, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura 1499-1502
Impact ofIII/V ratio on polytype and crystalline quality ofA1N grown on 4H-SiC (1120) substrate
by molecular-beam epitaxyM. Horita, J. Suda, andT. Kimoto 1503-1506
Effects of GaN-buffer etching in atmospheric-pressure MOVPE growth of InN on sapphireA. Yamamoto, Y. Nagai, H. Miwa, and A. Hashimoto 1507-1510
Towards fabrication ofIn-polar InN films and InN/GaN MQWsWataru Yamaguchi, Song-Bek Che, Naohiro Kikukawa, Yoshihiro Ishitani,and Akihiko Yoshikawa
1511-1514
RF-MBE growth ofcubic InN films on MgO (001) substrates
Y. Iwahashi, H. Yaguchi, A. Nishimoto, M. Orihara, Y. Hijikata, and S. Yoshida 1515-1518
A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN
W. J. Wang, H. Miwa, A. Hashimoto, and A. Yamamoto 1519-1522
Polarity and microstructure in InN thin layers grown by MOVPEN. Kuwano, Y. Nakahara, and H. Amano 1523-1526
NH3/TMI molar ratio dependence ofelectrical and optical propertiesfor atmospheric-pressure MOVPE InN
A. Yamamoto, H. Miwa, Y. Shibata, and A. Hashimoto 1527-1530
Growth ofInN on 6H-SiC by plasma assisted molecular beam epitaxyApril S. Brown, Tong-Ho Kim, Soojeong Choi, Pae Wu, Michael Morse, Maria Losurdo,Maria M. Giangregorio, Giovanni Bruno, and Akihiro Moto 1531-1535
Deterioration ofMOVPE InN films on sapphire during growth and post-growth annealingHiroshi Miwa, Akihiro Hashimoto, and Akio Yamamoto 1536-1539
Study on influence of atomic hydrogen irradiation on growth and properties ofN-polarity InNSong-Bek Che, Koichiro Akasaka, Yoshihiro Ishitani, and Akihiko Yoshikawa 1540-1543
Towards a better understanding of nano-islands formed during atmospheric pressure MOVPE
N. K. van der Laak, R. A. Oliver, J. S. Barnard, P. D. Cherns, M. J. Kappers,and C. J. Humphreys 1544-1547
Investigation of growth mechanisms of GaN quantum dots on (0001)A1N surface
by ammonia MBEV. G, Mansurov, Yu. G. Galitsyn, A. Yu. Nikitin, K. S. Zhuravlev, and Ph. Vennegues .... 1548-1551
Three methods for the growth of InGaN nanostructures by MOVPE
R. A. Oliver, M. J. Kappers, N. K. van der Laak, and C. J. Humphreys 1552-1556
Growth and morphology of MOVPE grown InGaN/GaN islands
S. Gangopadhyay, Th. Schmidt, S. Einfeldt, T. Yamaguchi, D. Hommel, and J. Falta 1557-1560
Growth of In-polar and N-polar InN nanocolumns on GaN templates by molecular beam epitaxyXinqiang Wang, Song-Bek Che, Yoshihiro Ishitani, and Akihiko Yoshikawa 1561-1565
1366 Contents
Dislocation behaviour in Ill-nitride epitaxial films grown on vicinal sapphire (0001) substrates
X. Q. Shen, H. Matsuhata, and H. Okumura 1566-1569
The effect of Si on the growth mode of GaN
J. von Pezold, R. A. Oliver, M. J. Kappers, P. D. Bristowe, and C. J. Humphreys 1570-1574
The initial growth stage hi PVT growth of aluminum nitride
P. Hermann, B.M. Epelbaum, M. Bickermann, S. Nagata, and A. Winnacker 1575-1578
Investigation ofA1N nucleation layers for AlGaN/GaN heterostructures on 4H-S1C
S. Boeykens, M. R. Leys, M. Germain, K. Cheng, J. Derluyn, B. Van Daele, G. Van Tendeloo,
R. Belmans, and G. Borghs 1579-1582
Real time spectroscopic ellipsometry investigation ofhomoepitaxial GaN grown
by plasma assisted molecular beam epitaxy
Tong-Ho Kim, Soojeong Choi, Pae Wu, April Brown, Maria Losurdo, Maria M. Giangregorio,Giovanni Bruno, and Akihiro Moto 1583-1586
Investigations on local Ga and In incorporation ofGalnN quantum wells on facets
of selectively grown GaN stripes
B. Neubert, F. Habel, P. Bruckner, F. Scholz, M. Schirra, M. Feneberg, K. Thonke, T. Riemann,
J. Christen, M. Beer, J. Zweck, G. Moutchnik, and M. Jetter 1587-1590
Fabrication ofInN/AlInN MQWs by RF-MBE
W. Terashima, S. B. Che, Y. Ishitani, and A. Yoshikawa 1591-1594
In-plane anisotropy in uniaxially-strained GaN films detected by optical diffraction techniqueSatoru Adachi, Yasunori Toda, Tetsuro Ishiguro, Katsuyuki Hoshino, and Yasuhiko Arakawa 1595 -1598
Fabrication ofInN/InGaN multiple quantum well structures by RF-MBE
M. Kurouchi, H. Na, H. Naoi, D. Muto, S. Takado, T. Araki, T. Miyajima, and Y. Nanishi. . . 1599-1603
Growth ofternary and quaternary cubic Ill-nitrides on 3C-SiC substrates
J. SchOrmann, S. Potthast, M. Schnietz, S. F. Li, D. J. As, and K. Lischka 1604-1607
Preparation and characterisation oftantalum carbide as an optional crucible material
for bulk aluminium nitride crystal growth via physical vapour transport
C. Hartmann, J. Wollweber, M. Albrecht, and I. Rasin 1608-1612
Influence of gas composition on the synthesis of gallium nitride powders
by two-stage chemical vapor method
K. Hara, A. Yonemura, and T. Uchida 1613-1616
Growth ofhigh-quality AIN at high growth rate by high-temperature MOVPE
N. Fujimoto, T. Kitano, G. Narita, N. Okada, K, Balakrishnan, M. Iwaya, S. Kamiyama,H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh 1617-1619
Modeling and experimental analysis of InGaN MOVPE in the Aixtron AIX 200/4 RF-S horizontal
reactor
E. V. Yakovlev, R. A. Talalaev, R. W. Martin, C. Jeynes, N. Peng, C. J. Dcatcher,and I. M. Watson 1620-1623
Fabrication ofGaN-based striped structures along the (1120) direction by the combination
of RJE dry-etching and KOH wet-etching techniques to recover dry-etching damageMorimichi Itoh, Tom Kinoshita, Koji Kawasaki, Misaichi Takeuchi, Choshiro Koike,
and Yoshinobu Aoyagi 1624-1628
A control technique of oxygen contamination by Ga beam irradiation in InN MOMBE growthK. Isamoto, Y. Uesaka, A. Yamamoto, and A. Hashimoto 1629-1632
Contents 1367
AlGaN films grown on trenched sapphire substrates using a low-temperature GaNP buffer layerby MOCVD
K. Sumiyoshi, M. Tsukihara, S. Kawamichi, F. Yan, and S. Sakai 1633-1636
Thermalization and recombination in exponential band tail states
M. Niehus and R. Schwarz 1637-1644
Current crowding effects on blue LED operationI. Yu. Evstratov, V. F. Mymrin, S. Yu. Karpov, and Yu. N. Makarov 1645-1648
Microfabrication of GaN groove on sapphire substrate treated selectively by electron-beam
H. Matsumura, M. Sumiya, Y. Kawai, M. Tomiki, K. Murakami, and S.Fuke 1649-1652
Structural and electrical properties
Recent results on A1N growth by HVPE and fabrication of free standing A1N wafers
V. Soukhoveev, 0. Kovalenkov, V. Ivantsov, A. Syrkin, A. Usikov, V. Maslennikov,and V. Dmitriev 1653-1657
Characterization ofstructural defects in (1120) GaN films grown on (1102) sapphire substrates
P. Vennegues, F. Mathal, and Z. Bougrioua 1658-1661
Diffraction anomalous fine structure investigation of InGaN quantum dots
E. Piskorska, V. Holy, M. Siebert, B. Krause, T. H. Metzger, Th. Schmidt, J. Falta,T. Yamaguchi, and D. Hommel 1662-1666
Quantitative strain analysis ofGaN/AIN quantum dot multilayersE. Sarigiannidou, A. D. Andreev, E. Monroy, B. Daudin, and J. L. Rouviere 1667-1670
Evaluation of strain in A1N thin films grown on sapphire and 6H-SiC by metalorganic chemical
vapor depositionNaolo Kato and Takashi Inushima 1671-1674
Electronic states in nitride semiconductor quantum dots: A tight-binding approachS. Schulz and G. Czycholl 1675-1678
TEM analyses ofwurtzite InGaN islands grown by MOVPE and MBE
A. Pretorius, T. Yamaguchi, C. Ktlbel, R. KrSger, D. Hommel, and A. Rosenauer 1679-1682
Reduced residual stress in GaN grown on 3c-SiC/Si(l 11) templates formed by C+-ion implantationT. Kobayashi, N. Sawazaki, M. S. Cho, A. Hashimoto, A. Yamamoto, and Y. Ito 1683-1686
Structural characterization of InN quantum dots grown by Metalorganic Vapour Phase EpitaxyJ. G. Lozano, D. Gonzalez, A. M. Sanchez, D. Araujo, S. Ruffenach, O. Briot, and R. Garcia. . 1687-1690
AIN/GaN superlattices: strain relaxation
E. Bellet-Amalric, B. Amstatt, and B. Daudin 1691-1694
Investigation ofthermal conductivity ofnitride mixed crystals and superlatticesby molecular dynamics
Takahiro Kawamura, Yoshihiro Kangawa, and Koichi Kakimoto 1695-1699
Thermodynamic stability ofIn1_.;C_vGaTAlvN on GaN and InN
Yoshihiro Kangawa, Koichi Kakimoto, Tomonori Ito, and Akinori Koukitu 1700-1703
Electrical properties ofNi/i-AlGaN/GaN structures and influence of thermal annealingT. Sawada, N. Kimura, K. Suzuki, K. Imai, S.-W. Kim, and T. Suzuki 1704-1708
High temperature characterization ofPt-based Schottky diodes on AlGaN/GaN heterostructures
J. Pedr6s, R. Cuerdo, R. Lossy, N. Chaturvedi, J. Wurfl, and F. Calle 1709-1712
1368Contents
Experimental evidence for Drude-Boltzmann-like transport in a two-dimensional electron gas
in an AlGaN/GaN heterostructure
Jing-Han Chen, Jyun-Ying Lin, Jung-Kai Tsai, Hun Park, Gil-Ho Kim, Jungseok Ahn,
Multiple defects in GalnN multiple quantum wells grown on ELO GaN layers and on GaN substrates
S.Tomiya, O. Goto, Y. Hoshina, T. Tanaka, and M. Ikeda 1779-1782
Metal (Ni, Au)-vacancy complexes in GaN
J. von Pezold and P. D. Bristowe 1783-1786
Contents 1369
Reduction of strain and dislocation defects in GaN layers grown on Si substrate by MOCVD
using a substrate defect engineering technique
M. Jamil, Eric Irissou, J. R. Grandusky, V. Jindal, and F. Shahedipour-Sandvik 1787-1791
Development ofpit-defect free smooth a-plane GaN surfaces on r-plane sapphireusing metalorganic chemical vapor deposition: A growth mechanism study
Vibhu Jindal, James Grandusky, Muhammad Jamil, Eric Irissou, Fatemeh Shahedipour Sandvik,Kevin Matocha, and Vinayak Tilak 1792-1797
Optical cavity formation on GaN using a conventional RIE systemF. G. Kalaitzakis, G. Konstantinidis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos
. . . 1798-1802
Structural analysis ofpyramidal defects in Mg-doped GaN
A. Pretorius, M. Schowalter, N. Daneu, R. Krfiger, A. Recnik, and A. Rosenauer 1803-1806
Morphological evaluation of epitaxial GaN grown on r-plane sapphire by metalorganic vapor-phaseepitaxy
KKusakabeandK. Ohkawa 1807-1810
InGaN quantum well epilayers morphological evolution under a wide range ofMOCVD
growth parameter sets
D. I. Florescu, S. M. Ting, V. N. Merai, A. Parekh, D. S. Lee, E. A. Armour, and W. E. Quinn 1811-1814
Pinholes in multiple quantum well InxGai _jN/GaN with low In concentration
Florence Gloux, Pierre Ruterana, and Gerard Nouet 1815-1818
Extremely smooth surface morphology ofGaN-based layers on misoriented GaN substrates
for high-power blue-violet lasers
Koichi Tachibana, Hajime Nago, and Shin-ya Nunoue 1819-1822
Structural and electrical characteristics ofAg/Alo.jGao.sN and Ag/Al0.3Ga0.7N Schottky contacts:
an XPS studyB. Boudjelida, I. Gee, J, Evans-Freeman, S. A. Clark, M. Azize, J.-M. Bethoux,
and P. DeMierry 1823-1827
Investigation ofoptimized ohmic contact of direct ITO layer with synchrotron radiation analysisJun-Seok Ha, Jun-Ho Jang, Min-Ho Joo, Tae-Hyeong Kim, Kyu-Ho Park, Hyun-Joon Shin,
Jeong-Soo Lee, and Jong-Jae Jung 1828-1831
TEM analysis of annihilation process of threading dislocations in GaN thin films grown by MOVPE
with anti-surfactant treatment
M. Hijikuro, N. Kuwano, M. Takeuchi, and Y. Aoyagi 1832-1835
C2„ nitrogen-hydrogen complexes in GaAsN revealed by X-ray AbsorptionNear-Edge Spectroscopyand ab initio simulations
G. Ciatto, F. Boscherini, A. Amore Bonapasta, F. Filippone, A. Folimeni, and M. Capizzi . . . 1836-1840
Opticalproperties
InN: Fermi level stabilization by low-energy ion bombardment
L. F. J. Piper, T. D. Veal, C. F. McConville, H. Lu, and W.J. Schaff 1841-1845
Observation of a filled electronic state in the conduction band ofInN
J. J. Kim, H. Makino, K. Kobayashi, P. P. Chen, E. Ikenaga, M, Kobata, A. Takeuchi, M. Awaji,T. Hanada, M. W. Cho, and T. Yao 1846-1849
Conduction and valence band edge properties of hexagonal InN characterized
by optical measurements
Y. Ishitani, W. Terashima, S. B. Che, and A. Yoshikawa 1850-1853
j 370 Contents
Anisotropy ofthe F-point effective mass and mobility in hexagonal InN
T. Hofmann, T. Chavdarov, V. Darakchieva, H. Lu, W. J. Schaff, and M. Schubert 1854-1857
Photoluminescence depth-profiling oflattice-mismatched InGaN thick film on GaN using inductively
coupled plasma etchingJi-Myon Lee, Byung-Il Kim, and Seong-Ju Park 1858-1861
Dynamic polarization rotation in pump-and-probe transients ofanisotropically strained .M-plane GaNfilms on LiA102
K. Omae, T. Flissikowski, P. Misra, O. Brandt, H. T. Grahn, K. Kojima, and Y. Kawakami. .
1862-1865
Energy gaps and bowing parameters ofInAlGaN ternary and quaternary alloysM. Androulidaki, N. T. Pelekanos, K. Tsagaraki, E. Dimakis, E. Iliopoulos, A. Adikimenakis,E. Bellet-Amalric, D. Jalabert, and A. Georgakilas 1866-1869
Photoluminescence spectra of GaN films grown at low temperature by compound-source molecular
Infrared reflectance measurement for InN thin film characterization
K. Fukui, Y. Kugumiya, N. Nakagawa, and A. Yamamoto 1874-1878
Band-to-band and inner shell excitation VIS-UV photoluminescence ofquaternary InAlGaN alloysK. Fukui, S. Naoe, K. Okada, S. Hamada, and H. Hirayama 1879-1883
High temperature refractive indices ofGaN
C. Liu, S. Stepanov, A. Gott, P. A. Shields, E. Zhirnov, W. N. Wang, E. Steimetz,and J. T. Zettler 1884-1887
B. Arnaudov, P. P. Paskov, H. Haratizadeh, P. 0. Holtz, B. Monemar, S. Kamiyama, M. Iwaya,H.Amano, andl. Akasaki 1888-1891
The magnesium acceptor states in GaN: an investigation by optically-detected magnetic resonance
G. N. Aliev, S. Zeng, J. J. Davies, D. Wolverson, S. J. Bingham, P. J. Parbrook, and T. Wang 1892-1896
Direct correlation between nonradiative recombination centers and threading dislocations
in InGaN quantum wells by near-field photoluminescence spectroscopyAkio Kaneta, Mitsuru Funato, Yukio Narukawa, Takashi Mukai, and Yoichi Kawakami.... 1897-1901
Orientation-dependent properties of aluminum nitride single crystalsM. Bickermann, P. Hermann, and B. M. Epelbaum 1902-1906
Photo-induced improvement of radiative efficiency and structural changes in GaAsN alloysH. Yaguchi, T. Morioke, T. Aoki, H. Shimizu, Y. Hijikata, S. Yoshida, M. Yoshita,H. Akiyama, N. Usami, D. Aoki, and K. Onabe 1907-1910
Effect ofV/III ratio on the optical properties ofEu-doped GaN
J. Sawahata, J. W. Seo, M. Takiguchi, D. Saito, S. Ncmoto, and K. Akimoto 1911-1914
Cathodoluminescence properties ofInGaN codoped with Zn and Si
Y. Honda, Y. Yanase, M. Yamaguchi, andN. Sawaki 1915-1918
The role of vacancies in the red luminescence from Mg-doped GaNS. Zeng, G. N. Aliev, D. Wolverson, J. J, Davies, S. J. Bingham, D. A. Abdulmalik,P. G. Coleman, T. Wang, and P. J. Parbrook 1919 1922
Carrier lifetime and diffusion in GaN epilayers grown by MEMOCVDG. Tamulaitis, J. Mickevicius, M. S. Shur, R. S. Qhalid Farced, J. P. Zhang,andR. Gaska 1923 1926
Contents 1371
Depth profiling ofion-implanted AlInN using time-of-flight secondary ion mass spectrometry
and cathodoluminescence
R. W. Martin, D. Rading, R. Kersting, E. Tallarek, E. Nogales, D. Amabile, K. Wang,V. Katchkanov, C. Trager-Cowan, K. P. O'Donnell, I. M. Watson, V. Matias, A. Vantomme,K. Lorenz, and E. Alves 1927-1930
Clustering in GaAsSbN alloys as a possible origin oftheir atypical optical behavior:
a Sb K-edge X-ray absorption study
Gianluca Ciatto, Jean-Christophe Harmand, Ludovic Largeau, and Frank Glas 1931-1934
Determination of carrier diffusion length in MOCVD-grown GaN epilayers on sapphireby optical techniques
E. V. Lutsenko, A. L. Gurskii, V. N. Pavlovskiy G. P. Yablonskii, T. Malinauskas,K. Jarasiflnas, B. Schineller, and M. Heuken 1935-1939
Coupling ofphonons with excitons bound to different donors and acceptors in hexagonal GaNK. P. Korona, A. Wysmolek, J. Kuhl, M. Kamiriska, J. M. Baranowski, D. C. Look,and S.S.Park 1940-1943
Enhanced emission efficiency of InGaN films with Si doping
K. P. Korona, C. Skierbiszewski, M. Siekacz, A. Feduniewicz, T. Suski, G. Franssen,I. Grzegory, J. Borysiuk, and M, Leszczynski 1962-1965
Optimizing the internal quantum efficiency ofGalnN SQW structures for green light emitters
D. Fuhrmann, U. Rossow, C. Netzel, H. Bremers, G. Ade, P. Hinze, and A. Hangleiter .... 1966-1969
High quantum efficiency InGaN/GaN structures emitting at 540 nm
D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, P. M. F. J. Costa, M, E. Vickers,R. Datta, C. J. Humphreys, and E. J. Thrush 1970-1973
Modifying optical properties ofInGaN quantum wells by a large piezoelectric polarizationH. Gotoh, T. Tawara, Y. Kobayashi, N. Kobayashi, Y. Yamauchi, T. Makimoto, and T. Saitoh 1974-1977
D. Y.Lin,W. L. Chen,W. C. Lin, J. J. Shiu, and J. Han 1983-1987
Anisotropic ambipolar diffusion of carriers in InGaN/GaN quantum wells
Y. J. Wang, S. J. Xu, and Q. Li 1988-1991
1372 Contents
Optical spectra of(HOI) InGaN/GaN and GaN/AlGaN MQW structure grown on a 7 degreeoffaxis (001) Si substrate
Eun-Hee Kim, Toshiki Hikosaka, Tetsuo Narita, Yoshio Honda, and Nobuhiko Sawaki....
1992-1996
Raman scattering from In0.2Gao.sN/GaN superlatticesKenji Kisoda, Kohji Hirakura, and Hiroshi Harima 1997-2000
Resonant photoluminescence excitation studies of InGaN/GaN single quantum wells
D. M. Graham, P. Dawson, M. J. Godfrey, M. J. Kappers, J. S. Barnard, C. J. Humphreys,and E. J. Thrush 2001-2004
The effect ofa Mg-doped GaN cap layer on the optical properties ofInGaN/AlGaN multiple
quantum well structures
D. M. Graham, P. Dawson, Y. Zhang, P. M. F. J. Costa, M. J. Kappers, C. J. Humphreys,and E. J. Thrush 2005-2008
Critical points ofthe bandstructure of AIN/GaN superlattices investigatedby spectroscopic ellipsometry and modulation spectroscopy
C. Buchheim, R. Goldhahn, A. T. Winzer, C. Cobet, M. Rakel, N. Esser, U. Rossow,D. Fuhrmann, A. Hangleiter, and O. Ambacher 2009-2013
Crack-free AlGaN/GaN Bragg mirrors grown on Si(l 11) substrates by metalorganic vapor phaseepitaxy
A. P. Chiu, N. C. Chen, P. H. Chang, and C. F. Shih 2014-2018
Optical characterization of GaN microcavity fabricated by wet etchingC.-Y. Lu, S.-L. Wang, H.-M. Wu, and L.-H. Peng 2019-2021
Large enhancement of GaN-UV light emission using silver mirror resonator
N. M. Ahmed, M. R. Hashim, and Z. Hassan 2022-2025
Eu3+ location in Eu doped GaN thin films and quantum dots
Thomas Andreev, Nguyen Quang Liem, Yuji Hori, Mitsuhiro Tanaka, Osamu Oda,Daniel Le Si Dang, and Bruno Daudin 2026-2029
Quantum kinetic theory ofphonon-assisted carrier transitions in nitride based quantum-dot systemsJ. Seebeck, T. R. Nielsen, M. Lorke, P. Gartner, and F. Jahnke 2030-2033
Tb-doped GaN quantum dots grown by plasma-assisted molecular beam epitaxyYuji Hori, Thomas Andreev, Denis Jalabert, Mitsuhiro Tanaka, Osamu Oda, Daniel Le Si Dang,and Bruno Daudin 2034-2037
Microscopic theory of carrier-carrier scattering in nitride based quantum-dot systemsT. R. Nielsen, J. Seebeck, M. Lorke, P. Gartner, and F. Jahnke 2038-2042
Localization of non-equilibrium carriers in deep InGaN quantum dots and its impacton the device performance
D. S. Sizov, V. S. Sizov, V. V. Lundin, E. E. Zavarin, A. F. Tsatsul'nikov, A. S. Vlasov,Yu. G. Musikhin, N. N. Ledentsov, A. M. Mintairov, K. Sun, and J. Merz 2043 -2047
Microphotoluminescence ofGaN/AIN quantum dots grown by MBEK. S. Zhuravlev, D. D. Ree, V. G. Mansurov, A. Yu. Nikitin, P. P. Paskov, and P.-O. Holtz . .
2048-2051
Quantum confined Stark effect in vertically correlated GaN/AIN quantum dots
S. P. Lepkowski and G. Jurczak 2052--2055
Influence of stacking on optical characteristics ofGaN/AIN self-organized quantum dots
B. J. Kwon, J. S. Hwang, H. S. Kwack, Y. H. Cho, N. Gogneau, B. Daudin, and Le Si Dang . . 2056-2059
Carrier dynamics in site-controlled Ga, _AInrN quantum dots
M. Jetter, V. Perez-Sol6rzano, A. Grfining, H. Grabeldinger, M. Ubl, and H. Schweizer.... 2060-2064
Contents 1373
Surface enhanced Raman scattering by GaN nanocolumns
A. G. Milekhin, R. Meijers, T. Richter, R. Calarco, H. Ltith, B. A. Paez Sierra, and D. R. T. Zalin 2065-2068
InGaN blue cathodoluminescence phosphors synthesized with long reaction time in a new reactor
Hisashi Kanie, Shingo Kobayashi, and Yuji Sema 2069-2072
Structural and optical characterization of AI>JntGa|_J[_vN quantum dots
V. Perez-Solorzano, A. Groning, H. Schweizer, and M. Jetter 2073-2077
Optical properties ofInGaN/GaN quantum wells on sapphire and bulk GaN substrate
M. Dworzak, T. Stempel, A. Hoffmann, G. Franssen, S. Grzanka, T. Suski, R. Czernecki,M. Leszczynski, and I. Grzegory 2078-2081
Exciton dynamics in nonpolar (1120) InGaN/GaN multiple quantum wells grown on GaN templatesprepared by lateral epitaxial overgrowth
T. Onuma, A. Chakraborty, B. A. Haskell, S. Keller, T. Sota, U. K. Mishra, S. P. DenBaais,J. S. Speck, S. Nakamura, and S. F. Chichibu 2082-2086
Electrical and recombination properties and deep traps spectra in MOCVD ELOG GaN layersIn-Hwan Lee, A. Y. Polyakov, N. B. Smimov, A. V. Govorkov, A. V. Markov,and S. J. Pearton 2087-2090
Two-dimensional electron gas in cubic ALXjai ..^N/GaN heterostructures
S. Potthast, J. Schormann, J. Fernandez, D. J. As, K. Lischka, H. Nagasawa, and M. Abe. . . 2091-2094
Prolonged kinetics ofphotoluminescence oftwo-dimensional electron gasin AlGaN/GaN heterostructure
T. S. Shamirzaev, N. S. Korzhavina, V. G. Mansurov, V. V. Preobrazhenskii,andK. S. Zhuravlev 2095-2098
Study ofexciton hopping in AlGaN epilayers by photoluminescence spectroscopyand Monte Carlo simulation
G. Tamulaitis, K. Kazlauskas, A. Zukauskas, J. Mickevi5ius, M. S. Shur,R. S. Qhalid Fareed, J. P. Zhang, and R. Gaska 2099-2102
Diffusion lengths in GaN obtained from steady state photocarrier gratings (SSPG)M. Niehus and R. Schwarz 2103-2108
Carrier dynamics ofoptical emission from two-dimensional electron gas
in undoped AlGaN/GaN single heterojunctionsH. S. Kwack, Y. H. Cho, G. H. Kim, M. R. Park, D. H. Youn, S. B. Bae, K.-S. Lee, J. H. Lee,and J. H. Lee 2109-2112
Optical characteristics oftwo-dimensional electrons in single and multiple ALGa^N/GaNheterostructures grown by metalorganic chemical vapor deposition
Sun-Mo Kim, Ho-Sang Kwack, Sun-Woong Hwang, Yong-Hoon Cho, H. I. Cho, J. H. Lee,
andKang L.Wang 2113-2116
Below bandgap transitions in an AlGaN/GaN transistor heterostructure observed
by pholoreflectance spectroscopy
R. Kudrawiec, M. Syperek, J. Misiewicz, M. Rudzinski, A, P. Grzegorczyk, P. R. Hageman,andP.K. Larsen 2117-2120
Cathodoluminescence and electrophysical characterization ofAlTGa,_.vN epilayersV. I. Kozlovsky, Y. K. Skasyrsky, Y. Dikme, H. Kalisch, R. H. Jansen, V. G. Litvinov,
andM.Heuken 2121-2124
Defect density dependence ofluminescence efficiency and lifetimes in AlGaN active regionsexhibiting enhanced emission from nanoscale compositional inhomogeneities
G. A. Garrett, A. V. Sampath, C. J. Collins, E. D. Readinger, W. L. Sarney, H. Shen,
M. Wraback, V. Soukhoveev, A. Usikov, and V. Dmitriev 2125-2128
1374 Contents
Photonic devices
Degradation of blue LEDs related to structural disorder
A. V. Kamanin, A. G. Kolmakov, P. S. Kop'ev, G. A. Onushkin, A. V. Sakharov, N. M. Shmidt,D. S. Sizov, A. A. Sitnikova, A. L. Zakgeim, R. V. Zolotareva, and A. S. Usikov 2129-2132
High quality tin zinc oxide/Ag ohmic contacts for UV flip-chip light-emitting diodes
Hyun-Gi Hong, K.-Y. Ban, June-0 Song, J. Cho, Y. Park, J. S. Kwak, Ian T. Ferguson,and Tae-Yeon Seong 2133-2136
Fabrication and characterization ofInGaN resonant-cavity light-emitting diodes on silicon substrates
Shih-Yung Huang, Ray-Hua Horng, Wei-Kai Wang, and Don-Sing Wuu 2137-2140
InGaN-based light-emitting diodes grown on grooved sapphire substrates
Temperature current-voltage characterisation of MOCVD grown InGaN/GaN MQW LEDs
Grigore Moldovarx, Andrew Phillips, E. J. Thrush, and Colin J. Humphreys 2145-2148
Micro-EL studying of high power blue LEDs
G. A. Onushkin, A. L. Zakgeim, D. A. Zakgeim, I. V. Rozhansky, A. F. Tsatsulnikov,W. V. Lundin, and D. S. Sizov 2149-2152
Nitride-based light emitting diodes with quaternary p-AHnGaN surface layersC. H.Kuo, S.J. Chang, G. C.Chi, K.T. Lam, and Y.S. Sun 2153-2155
Evaluation ofwavelength shifts ofgreen and blue light emitting diodes with InN/GaN
multiple quantum wells
Je Won Kim, Kyu Han Lee, and Sangsu Hong 2156-2159
Analysis of dependence of electroluminescence efficiency ofAlInGaN LED heterostructures
on pumpingI. V. Rozhansky and D. A. Zakheim 2160-2164
Light extraction process in moth-eye structure
H. Kasugai, K. Nagamatsu, Y. Miyake, A. Honshio, T. Kawashima, K. Iida, M. Iwaya,S. Kamiyama, H. Amano, I. Akasaki, H. Kinoshita, and H. Shiomi 2165-2168
Improvement of luminous intensity of InGaN light emitting diodes grown on hemispherical patternedsapphire
Jae-Hoon Lee, Jeong-Tak Oh, Jin-Sub Park, Je-Won Kim, Yong-Chun Kim, Jeong-Wook Lee,and Hyung-Koun Cho 2169-2173
Thermal analysis of GaN-based laser diode packageW.J. Hwang, T.H.Lee, O.H.Nam, H, K. Kim, J. S. Kwak.Y. J. Park, and M. W. Shin.
. . . 2174-2177
Analysis of optical loss on blue-violet laser diodes
J. K. Son, J. S. Hwang, S. N. Lee, T. Sakong, H. Paek, S. Chae, H. K. Kim, O. Nam, J. Y. Kim,Y. H. Cho, and Y. Park 2178-2181
Photoelectrochemical sidewall etching enhances light output power in GaN-based light emittingdiodes
C. F. Lin, J. J. Dai, R. PI. Jiang, J. H. Zheng, Z. J. Yang, C. C. Yu, and W. C. Lcc 2182-2186
Variation of thermal resistance with input power in LEDs
Lianqiao Yang, Jianzheng Hu, Lan Kim, and Moo Whan Shin 2187-2190
MOCVD of InGaN-based light emitting structures on silicon substrates with strain optimized bufferlayers using long Al pre-deposition
J.-Y. Clames, Ch. Giesen, T. Meyer, and M. Heuken 2191 2194
Contents 1375
Comparative optical studies on violet InGaN quantum well laser diode structures grown
on sapphire and GaN substrates
J. S. Hwang, J. W. Choi, A. Gokarna, Y. H. Cho, J. K. Son, S. N. Lee, T. Sakong, H. S. Paek,0. H. Nam, and Y. Park 2195-2198
Frank Tinjod, Philippe de Mierry, David Lancefield, Sebastien Chenot, Eric Virey,Jennifer L. Stone-Sundberg, Milan R. Kokta, and Damien Pauwels 2199-2202
Carrier capture and escape processes in (In,Ga)N single-quantum-well diode under forward bias
condition by photoluminescence spectroscopyA. Satake, K. Soejima, H. Aizawa, and K. Fujiwara 2203-2206
Low resistance and highly reflective ohmic contacts top-type GaN using transparent interlayersfor flip-chip light emitting diodes
June-0 Song, J. S. Kwak, Hyun-Gi Hong, Ian T. Ferguson, and Tae-Yeon Seong 2207-2210
Investigation ofoptical-output-power degradation in 365-nm UV-LEDs
Carrier confinement effect enhanced by AlGaN/GaN multi-quantum barrier in AlInGaN based highpower blue-violet laser diodes
Sung-Nam Lee, S. Y. Cho, K. H. Ha, K. K. Choi, T. Jang, S. H. Chae, H. K. Kim, H. S. Paek,Y. J. Sung,T. Sakong, J.K. Son.H. Y.Ryu, Y.H.Kim, E.Yoon, O.H.Nam, and Y.Park . . 2215-2218
Broadband spectrally dynamic solid state illumination sourceDavid B. Nicol, Ali Asghar, Shalini Gupta, Hun Kang, Ming Pan, Martin Strassburg,Chris Summers, and Ian T. Ferguson 2223-2226
First InGaN/GaN thin film LED using SiCOI engineered substrate
J. Dorsaz, B. Faure, J.-F. Carlin, M. Mosca, P. Gilet, F. Letertre, S. Bressot, H. Larheche,
andP.Bove 2227-2230
Magnetic properties
Growth ofFe doped semi-insulating GaN on sapphire and 4H-SiC by MOCVDM. Rudzinski, V. Desmaris, P. A. van Hal, J. L. Weyher, P. R. Hageman, K. Dynefors,T. C. R6dle, H. F. F. Jos, H. Zirath, and P. K. Larsen 2231-2236
Optical studies of MOCVD-grown GaN-based ferromagnetic semiconductor epilayers and devices
M. H. Kane, M. Strassburg, W. E. Fenwick, A. Asghar, J. Senawiratne, D. Azamat, Z. Hu,E. Malguth, S. Graham, U. Perera, W. Gehlhoff, A. Hoffmann, N. Dietz, C. J. Summers,and I. T. Ferguson 2237-2240
Investigation ofoptical phonons and electronic properties ofgroup III-V nitride multi quantum wells
by using far infrared magnetoplasmon spectroscopyS. Farjami Shayesteh, A. Rahmani, and T. J. Parker 2241-2245
Influence ofthe magnetic field on the effective mass of the two-dimensional electron gas
in ALGa, _,N/GaN heterostructures
N. Tang, B. Shen, M. J. Wang, Z. J. Yang, K. Xu, G. Y. Zhang, Y. S. Gui, B, Zhu, S. L. Guo,J. H. Chu, K. Hoshino, and Y. Arakawa 2246-2249
1376 Contents
Magnetic, optical and electrical properties ofGaN and A1N doped with rare-earth element Gd
S. W. Choi, Y. K. Zhou, S. Emura, X. J. Lee, N. Teraguchi, A. Suzuki, and H. Asahi 2250-2253
Electronic devices
Performance ofAlGaN/GaN heterojunction FETs for microwave power applications (invited)
H.Miyamoto 2254-2260
An AlGaN/GaN two-color photodetector based on an AlGaN/GaN/SiC HEMT layer structure
M. Marso, A. Fox, G. Heidelberger, J. Bernat, and H. Ltith 2261-2264
A. M. Kurakin, S. A. Vitusevich, S. V. Danylyuk, A. V. Naumov, C. T. Foxon, S. V. Novikov,N. Klein, H. Ltith, and A. E. Belyaev 2265-2269
Hydrogen generation from aqueous water using n-GaN by photoassisted electrolysisKatsushi Fujii and Kazuhiro Ohkawa 2270-2273
Piezoelectric properties ofthin A1N layers for MEMS application determined
by piezoresponse force microscopyK. Tonisch, V. Cimalla, Ch. Foerster, D. Dontsov, and O. Ambacher 2274-2277
Narrow-band 400 nm MSM photodetectors using a thin InGaN layer on a GaN/sapphire structure
J. Ohsawa, T. Kozawa, O. Fujishima, and H. Itoh 2278-2282
GaN-based Schottky diodes for hydrogen sensing in transformer oil
Peter Sandvik, Elena Babes-Dornea, Anik Roy Trudel, Marius Georgescu, Vinayak Tilak,and Daniel Renaud 2283-2286
AlGaN metal-semiconductor-metal structure for pressure sensing applicationsZ. Hassan, Y. C. Lee, S. S. Ng, F. K. Yam, Y. Liu, Z. Rang, M. Z. Kauser, P. P. Ruden,and M. I. Nathan 2287-2290
Suppression ofgate leakage current in GaN MOS devices by passivation with photo-grown Ga2OjH.-M. Wu and L.-FI. Peng 2291-2294
Fabrication and characterization ofindium-tin-oxide/GaN visible-blind UV detectors
H. F. Lui, W. K. Fong, C. Surya, C.H.Cheung, and A. B. Djurisic 2295-2298
Ki Yon Park, Bong Joon Kwon, Jeong Hwan Son, and Yong-Hoon Cho 2299-2302
Screening ofpolarization induced electric fields in blue/violet InGaN/GaN laser diodes
by Si doping in quantum barriers revealed by hydrostatic pressure
G. Franssen, T. Suski, P. Perlin, R. Bohdan, A. Bercha, W. Trzeciakowski, I. Makarowa,R. Czernecki, M. Leszczynski, and I. Grzegory 2303-2306
Piezoresistive and piezoelectric effects in GaN
V. Tilak, A. Vertiatchikh, J. Jiang, N. Reeves, and S. Dasgupta 2307-2311
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch
J. Liu, Y. G. Zhou, J. Zhu, K. M. Lau, and K. J. Chen 2312-2316
Fligh temperature characteristics ofdoped channel AlGaN/GaN MIS-HFETs
with thin AlGaN barrier layerC. X. Wang, N. Maeda, M. Hiroki, Y. Yokoyama, T. Makimoto, T. Kobayashi, and T. Enoki 2317-2320
Influence of macro defects in SiC substrate on AlGaN/GaN HEMT DC characteristics
H. Sazawa, T. Mitani, H. Bang, K. Hirata, M. Kosaki, K. Furuta, T. Tsuchiya, K. Hikosaka,S. Nakashima, and H. Okumura 2321-2324
Contents 1377
Quality and uniformity assessment ofAlGaN/GaN quantum wells and HEMT heterostructures grownby molecularbeam epitaxy with ammonia source
Y. Cordier, F. Pmvost, F. Semond, J. Massies, M. Leroux, P. Lorenzini, and C. Chaix 2325-2328
Low-frequency noise in AlGaN/GaN HEMT structures with A1N thin film layerS. A. Vitusevich, O. A. Antoniuk, M. V. Petrychuk, S. V. Danylyuk, A. M. Kurakin,A. E. Belyaev, and N.Klein 2329-2332
Schottky gate effects on transport properties ofAlo.35Gao.65N/GaN heterostructures
A. Asgari, M. Kalafi, and L. Faraone 2333-2337
High and low energyproton irradiation effects on AlGaN/GaN HFETs
G. Sonia, E. Richter, R. Lossy, M. Mai, J. Schmidt, M. Weyers, G. Trankle, A. Denker,J. Opitz-Coutureau, G. Pensl, I. Brauer, and H. P. Strunk 2338-2341
Advanced buffers for AlGaN/GaN HEMT and InGaN/GaN MQW on silicon substrates
Y. Dikme, M. Fieger, M. Eickelkamp, C. Giesen, E, V. Lutsenko, G. P. Yablonskii,A. Szymakowski, F. O. Jessen, A. Vescan, H. Kalisch, M. Heuken, and R. H. Jansen 2342-2345
Analysis of buffer-trapping effects on current collapse of GaN FETs
K. Horio, H. Takayanagi, and H. Nakano 2346-2349
An analytical model for GaN MESFET's using new velocity-field dependenceSneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, and R. S. Gupta 2350-2355
A surface trap model and its application to analysis ofIll-nitride HEMT performanceKirill A. Bulashevich and Sergey Yu. Karpov 2356-2359
Effect of epitaxial layer crystal quality on DC and RF characteristics
of AlGaN/GaN short-gate HEMTsK. Shiojima, T. Makimura, T. Maruyama, T. Suemitsu, N. Shigekawa, M. Hiroki,and H. Yokoyama 2360-2363
