Introduction to PAMiD

1

Introduction

Module solutions to address growing RFFE complexity.

PAMiD : PA + Duplexer + Filter + ASM

2

S011

Take Qualcomm S011 for example[2]:

3

S011

Application[2]:

Covering LTE/WCDMA/HSUPA Band 1, 2, 3, 4, DCS, PCS,

Aux Ports

Integration of SAW duplexers, Switches, Envelope Tracking

PA, Coupler

Supporting Inter band Carrier Aggregation Bands 1+3 and

2+4

Single ended in and outputs of all RX ports

4

S011

Schematics[3]:

5

S011

S011 should NOT be in the same shielding cavity with

WTR device to avoid VCO pulling issue[3].

S011 Transceiver

S011 Transceiver

PAD

VCO

Transceiver

Tx signal

6

S011

It is acceptable to share the cavity with other[3].

LB PAMiD

MB PAMiD

HB PAMiD

7

S011

Do not place S011 back-to-back with other heat-

generating components, such as application processor,

another PAs, or PMIC that may work at the same time

with S011[3]

Otherwise, there will be thermal issue, thereby

aggravating RF performance.

8

S011

Top layer layout [3]:

9

S011

With 50 Ohm impedance, the wider the trace width is,

the larger gap between trace and reference GND will be.

The wider the trace width is, the smaller the insertion

loss will be.

Thus, if necessary, cut out can help minimize insertion

loss.

10

S011

But cut out occupies more PCB space.

Besides, according to the calculation, the parasitic

capacitance increases with cut out.

Thus, cut out is a compromise.

3.7 mil 9.5 mil

2.2 mil

5.2 mil

Lengt

11

S011

Keep VDD_PA1, VDD_PA2 and VDD_2G as wide trace as

possible to avoid IR drop.

Minimum 6 micro vias to next layers for VDD_PA1,

VDD_PA2 and VDD_2G, 2 micro vias for VDD_VBATT.

This can help avoid IR drop as well.

DC supply layer 7 -> Make sure you have sufficient

amount of GND vias for heat dissipation from PA and

for GND currents[3].

12

S011

13

AFEM-9040 vs. S011 MB PAMid Features

As shown below, in terms of block diagram, the AVAGO

MB PAMiD(AFEM-9040) is the nearly the same as

S011[4].

14


As shown below, in terms of foot print, the AFEM-9040

is the nearly the same as S011[4].

15


In other words, AFEM-9040 and S011 are NOT pin-to-pin

completely, but Co-PCB design is still feasible with

some layout modifications[4].

16


Both AFEM-9040 and S011 have an integrated coupler,

and the connection between PAMiDs is daisy-chain

design[5].

CPL_HB

CPL_IN

CPL_MB

CPL_IN

CPL_LB

CPL_IN

Transceiver

FBRX

HB PAMiD

MB PAMiD

LB PAMiD

17


For the pin marked as blue, AFEM-9040 regards it as

isolation pin of integrated coupler; S011 regards it as

GND pin[4].

ANT

GND

GN

D

Thus, for the pin, we need to do some modifications

because of Co-PCB design. AFEM-9040 S011

Blue Pad ISO GND

18


For the pin, we put three dummy pads, and make two of

them connect to GND and other PAMiDs individually.

ANT

GND

GN

DTo other PAMiDs

19


For AFEM-9040, we put a 0 ohm resistor to connect to

other PAMiDs.

For S011, we put a 0 ohm resistor to connect to GND.

ANT

GND

GN

D

To other PAMiDs

ANT

GND

GN

D

To other PAMiDs

AFEM-9040 S011

AFEM-9040 S011

Blue Pad ISO GND

20


For the Co-PCB design, we should use merely three

pads to accommodate two components instead of four

pads.

ANT

GND

GN

D

ANT

GND

GN

D

21


Otherwise, for both AFEM-9040 and S011, there will be

stub.

ANT

GND

GN

D

ANT

GND

GN

D

AFEM-9040 S011

Stub Stub

22


Especially for AFEM-9040, chances are that the stub

affect the impedance, thereby aggravating the accuracy

of power detection and EVM performance.

Without stub

With stub

ANT

GND

GN

D

AFEM-9040

Stub

23


Again, for the pin marked as blue, AFEM-9040 regards it

as GND pin; S011 regards it as CPLin pin of integrated

coupler[4].

As mentioned above, put merely three dummy pads.

ANT

GND

CPL

out

GND

ANT

GND

CPL

out

GND

ANT

GND

CPL

out

GND

24


Both AFEM-9040 and S011 have an integrated GSM PA

which is connected to transceiver[5].

Transceiver

Transceiver

25


For the pin marked as blue, AFEM-9040 regards it as

input pin of integrated GSM PA; S011 regards it as GND

pin[4].

As mentioned above, put merely three dummy pads.

DATA

GND

CLK

VIO

GND

DATA

GND

CLK

VIO

GND

DATA

GND

CLK

VIO

GND

26


For B1 and B4 Rx, the connection between transceiver

and PAMiD for AFEM-9040 and S011 is as below[5]:

RX_B1_B4

SPDT

WTR3925

RX_B1

RX_B4AFEM-9040

WTR3925

RX_B1

RX_B4 S011

27


The pads marked blue and pink for AFEM-9040 and

S011 are as the table:

AFEM-9040 S011

Blue Pad RX_B1_B4 RX_B1

Pink Pad GND RX_B4

GND

GN

D

GN

D

GN

D

RX_B3

WTR3925

28


For AFEM-9040, put two 0 ohm resistors. One is

connected from PAMiD to transceiver, and the other is

connected to GND directly.

AFEM-9040

Blue Pad RX_B1_B4

Pink Pad GND

GND

GN

D

GN

D

GN

D

RX_B3

WTR3925

29


For S011, put merely one 0 ohm resistor that is

connected from PAMiD to transceiver directly.

S011

Blue Pad RX_B1

Pink Pad RX_B4

GND

GN

D

GN

D

GN

D

RX_B3

WTR3925

30


For B34 and B39, the connection between transceiver

and PAMiD for AFEM-9040 and S011 is as below[5]:

RX_B34_B39

Diplexer

AFEM-9040

RX_B39

RX_B34 WTR3925

RX_B34_B39

Diplexer

S011 WTR3925

TRX_B34_B39

TRX_B34

TRX_B39

31


The pads marked green, yellow, pink and blue for

AFEM-9040 and S011 are as the table:

AFEM-9040 S011

Green RX_B34 TRX_B34

Yellow RX_B39 TRX_B39

Pink TRX_2 TX_MB2

Blue GND RX_B34_B39

GND

GN

D

RX_B3

GN

D

RX

_B

1

GN

D

GND

WTR3925

TRX_2 (Inner layer)

TRX_2 (Top layer)

32


For AFEM-9040, put 3 ohm resistors. The locations of

these 3 ohm resistors are as below :

AFEM-9040

Green RX_B34

Yellow RX_B39

Pink TRX_2

Blue GND

GND

GN

D

RX_B3

GN

D

RX

_B

1

GN

D

GND

WTR3925

TRX_2 (Inner layer)

TRX_2 (Top layer)

33


For S011, put two 4 ohm resistors. The locations of

these 4 ohm resistors are as below :

GND

GN

D

RX_B3

GN

D

RX

_B

1

GN

D

GND

WTR3925

TRX_2 (Inner layer)

TRX_2 (Top layer)

S011

Green TRX_B34

Yellow TRX_B39

Pink TX_MB2

Blue RX_B34_B39

34

Reference

[1] Qualcomm and TDK Joint Venture, Qualcomm

[2] S011 TDK MB PAMiD Band 1, 2, 3, and 4, Device Specification, Qualcomm

[3] S011 TDK MB PAMID Design Checklist, Qualcomm

[4] Avago PAMid vs. Qcom PAMid, AVAGO

[5] WTR3925 + WTR4905 + Qualcomm RF360™ with HB, MB, and LB PAMiD Global 3DL CA

Design Example, Qualcomm

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Date post:	19-Jan-2017
Category:	Devices & Hardware
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Introduction to PAMiD

Devices & Hardware