InvenSense, Inc. Proprietary

InvenSense, Inc.

Proprietary

InvenSense Fabless Model for the MEMS Industry

HKSTP Symposium – Aug 2016

InvenSense, Inc. Proprietary

• MEMS Market

• InvenSense

• CMOS-MEMS Integration

• InvenSense Shuttle Program and Process

Outline

InvenSense, Inc. Proprietary

MEMS MARKET

InvenSense, Inc. Proprietary

$0

$2,000

$4,000

$6,000

$8,000

$10,000

$12,000

$14,000

$16,000

$18,000

2012 2013 2014 2015 2016 2017 2018 2019

Automotive

Consumer

Industrial

Telecom

MEMS Markets by Applications U

S$M

Yole Devéloppement “Status of the MEMS Industry” April 2014

InvenSense, Inc. Proprietary

$0

$200

$400

$600

$800

$1,000

$1,200

2013 2014 2015 2016 2017 2018 2019

MEMS for Internet of Things (IoT) Market U

S$M

Yole Devélopement “Status of the MEMS Industry” April 2014

InvenSense, Inc. Proprietary

wearabl

e

sports

energy security

control

Sensor

Sensor

AlwaysOn, and Intuitively Interactive Apps and Services Location + Activity + Time + Environment

15

Ambient Computing – Internet of Things

InvenSense, Inc. Proprietary

INVENSENSE

InvenSense, Inc. Proprietary Note:

Company fiscal year ends Sunday closest to March 31.

Founded

2003

Headquarters

San Jose, CA

11.16.11

NYSE: INVN

Employees

665

$3 $8 $29

$80 $97

$153

$209

$253

$372

FY2007 FY2008 FY2009 FY2010 FY2011 FY 2012 FY2013 FY2014 FY2015

($ in M

illio

ns)

Cash Position

$242M (As of 28 June 2015)

InvenSense, Inc. Proprietary 9

San Jose, Calif

Calgary, Canada

Boston, Mass Grenoble, France

Milan, Italy

Bratislava, Slovakia

Yokohama, Japan

Shanghai, China

Shenzhen, China

Seoul, Korea

Hsinchu, Taiwan

InvenSense, Inc. Proprietary

Select Customers

10

Mobile 78%

Imaging 12%

Other/ IoT 10%

FY15

InvenSense, Inc. Proprietary

MEMS Sensors

Fabrication

Stabilization Navigation

Sensor Fusion

Unique Technology & Intellectual Property

11

MEMS Microphones

Fingerprint Authentication

InvenSense, Inc. Proprietary

Fabless Business Model

12

• 1 Billion Unit Capacity

• Super Efficient Supply Chain

• Easy Fulfillment of Short Lead Time Upsides

CMOS-MEMS Wafer Sort Packaging Proprietary Testing

TSMC

GlobalFoundries

InvenSense

ASE

Amkor

Lingsen InvenSense

InvenSense, Inc. Proprietary

VALUE OF WAFER-LEVEL CMOS-MEMS INTEGRATION

InvenSense, Inc. Proprietary

Low Parasitics

Minimize routing and external interconnect

Wafer Level Sealing / Packaging

Wafer Level Testing

Designed for Test

Wafer-level Integration Advantages

InvenSense, Inc. Proprietary

Semiconductor Manufacturing Flow for MEMS

15

Wafer Sort CMOS-MEMS Packaging FT & Ship

Traditional MEMS

Process

InvenSense Process

CMOS–MEMS Wafer TSMC

Wafer Sort (e-test)

Assembly

1 chip

Singulation Integrated

Chip

Final Test

CMOS Wafer Foundry 1

WAT CMOS only

Singulation ASIC Chip

MEMS Wafer Foundry 2

MEMS WAT Singulation MEMS Chip

Final Test

Assembly

Multi-Chip

InvenSense, Inc. Proprietary

Applications Benefiting from CMOS Integration

High Sensitivity

• Low signal and low noise requirement

High Complexity

• Large arrays and closed-loop control

High Integration

• Sensor fusion and high-density SoC

Low Cost and Small Size

• Mobile devices and Internet of Things

• Implantable Sensors

InvenSense, Inc. Proprietary

INVENSENSE SHUTTLE

InvenSense, Inc. Proprietary

Challenges for MEMS Product Development

• “One product - one process” increases barrier to entry

• Find foundry able and willing to bring up new process Fabrication

• Fighting both design and process simultaneously

• Need for fast design iterations to keep up with market

• New start ups need $50M-$70M, 7+ years to profit Development

• Over 50% of costs are in package and test

• Establish high yield and quality

• Establish reliable supply chain to deliver high quality at low cost Production

• Extend and expand product base

• Maintain competitiveness - add more value and lower cost Growth

InvenSense, Inc. Proprietary

Offer a proven and high volume CMOS-MEMS platform for MEMS fabrication

Speed up development cycle and time to commercialization

Bring the “fabless CMOS” scalable production model to MEMS industry

InvenSense Shuttle Objectives

InvenSense, Inc. Proprietary

Innovators

• Faster development cycle by focusing on innovative MEMS designs and not fabrication

• Faster and lower cost development cycles

InvenSense

• Collaborate on new ideas and opportunities

• Building a closer relationship with innovators

• Potential royalty revenue

Market

• More innovations in MEMS

• More standardization in the industry

InvenSense Shuttle Payoff

InvenSense, Inc. Proprietary

InvenSense Shuttle Processes

• Standard (SOI) Shuttle – Process used on InvenSense inertial sensors

– SOI MEMS integrated with 0.18um CMOS

– Suitable for: Inertial, Resonators, Pressure, RF

• Piezo Shuttle – Extension of standard process to piezo (AlN)

– AlN + Si MEMS integrated with 0.18um CMOS

– Suitable for: RF, Ultrasound, IR, Timing, Audio

InvenSense, Inc. Proprietary

• Single-Crystal Si MEMS Structural layer

• DRIE structure definition

• No release etch requirement

• Aluminum-Germanium wafer bond

MEMS

• 0.18 mm Process

• High voltage LDMOS (up to 24v)

• 6 Metal layers CMOS

SOI Shuttle Process Overview

Wire-Bond Pad

Moveable

MEMS

CMOS Contact MEMS Anchored to

handle only

MEMS Anchored to

handle and CMOS

Bottom Cavity

in CMOS

Electrode to interact with MEMS

Upper

Cavity

Eutectic Bond

CMOS Wafer

IMD+Pass.

CMOS Top Metal

Germanium

Device Layer

Buried Oxide

Handle Wafer

Top Aluminum

InvenSense, Inc. Proprietary

• AlN + Silicon structural layer

• Top and Bottom piezo electrodes

• Port opening to expose MEMS to environment

• TCF compensation options

• Aluminum-Germanium wafer bond

MEMS

• 0.18 mm Process

• High voltage LDMOS (up to 24v)

• 6 Metal layers CMOS

Piezo Shuttle Process Overview

MEMS wafer Oxide Al

AlN Mo Ge CMOS wafer

Device layer IMD

InvenSense, Inc. Proprietary

Standard Shuttle Process Flow

InvenSense, Inc. Proprietary

Piezo Shuttle Process Flow

25

MEMS wafer Oxide Al

AlN Mo Ge CMOS wafer

Device layer IMD

InvenSense, Inc. Proprietary

SAMPLE SHUTTLE PROJECTS

InvenSense, Inc. Proprietary

Project: Mode-Reversal FM Gyro

27

Collaborators:

D. Horsley, B. Boser

UC Davis/Berkeley

Process: SOI

InvenSense, Inc. Proprietary

Project: CMOS-Integrated High-Frequency Resonators

28

Collaborators:

T. Kenny, B. Murmann

Stanford University

Process: SOI

InvenSense, Inc. Proprietary

Project: Nano-Power Pressure Sensor

29

Collaborators:

S. Gambini

University of Melbourne

Process: SOI

InvenSense, Inc. Proprietary

Shuttle Projects: IR Sensor

30

Collaborators:

Mina Rais-Zadeh

University of Michigan

Process: Piezo

IR on

IR off

InvenSense, Inc. Proprietary

Collaborators:

D. Horsley, B. Boser

UC Davis/Berkeley

Process: Piezo

Projects: Ultrasonic Fingerprint Sensor

31

Fingerprint (optic) Fingerprint (ultrasonic)

Lateral distance - x (mm)

Late

ral dis

tance -

y (

mm

)

-5 -4 -3 -2 -1 0 1 2 3 4 5-4

-3

-2

-1

0

1

2

3

4

5

10

15

20

25

mV

InvenSense, Inc. Proprietary

INVENSENSE SHUTTLE PROGRAM

InvenSense, Inc. Proprietary

InvenSense Shuttle

• Brings the CMOS fabless model to MEMS industry

• Increases MEMS Value through system integration

• Enables revolutionary new Smart MEMS products

• Opens world class foundries to MEMS innovators

• Reduces time to market

• Next Shuttle tapes out in December 2016

• For More Information – Contact us: shuttle@invensense.com

– Register on NF Shuttle Web Site: http://www.invensense.com/invensense-shuttle/login/

Summary

InvenSense, Inc. Proprietary InvenSense Inc. Company Confidential

Thank You