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ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department Rutherford Appleton Laboratory
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Page 1: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI

Introduction to RF at ISIS

ISIS Lecture, 16 February 2006

David FindlayAccelerator DivisionISIS DepartmentRutherford Appleton Laboratory

Page 2: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

22

From ISIS MCR Beam News

3-NOV-2005 00:04 A burnt out valve base has been found on system 4 RF. We are in the process of changing it. Further update at 03:00 Hrs.

17-NOV-2005 13:30 The beam tripped due to Modulator 3 tripping off. Whilst attempting to bring RF back on a large breakdown was heard in the feedline / 116 Valve area. We have investigated the problem and found a significant water leak. Experts are in attendance to rectify the problem. Update at 14.30 Hours.

Page 3: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

33

What is RF?

RF = Radio frequency

Used as shorthand for

Alternating voltages at radio frequencies

Alternating currents at radio frequencies

Electromagnetic waves at radio frequencies

Power carried in electromagnetic waves

Apparatus generating RF power

...

Page 4: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

44

What are radio frequencies?

Long waves~200 kHz

Medium waves ~1 MHz

Short waves ~3 – 30 MHz

VHF radio ~100 MHz

TV ~500 MHz

Mobile phones ~1000 – 2000 MHz

Satellite TV ~10000 MHz

Accelerators ~1 MHz – 10000 MHz

http://www.ofcom.org.uk/static/archive/ra/publication/ra_info/ra365.htm#table

Page 5: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

55

Wavelengths and frequencies?

c = f

Velocity = wavelength × frequency

Velocity of light = 3×108 metres/second

= 186,000 miles/second

= 670,000,000 miles/hour

= 300 m/µs

(300 m twice around the synchrotron)

Page 6: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

66

FrequenciesWavelengths

Long waves~200 kHz ~1500 m

Medium waves ~1 MHz ~300 m

Short waves ~3 – 30 MHz~10 – 100 m

VHF radio ~100 MHz ~3 m

TV ~500 MHz ~2 feet

Mobile phones ~1000 – 2000 MHz ~6

– 12 inches

Satellite TV ~10000 MHz ~1 inch

Accelerators ~1 MHz – 10000 MHz

240 VAC mains 50 Hz ~4000 miles

Page 7: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

77

Relative size matters

Page 8: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

BBC Droitwich transmitter — Long wave Radio 4

Page 9: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Marconi’s transmitter, 1902 — Nova Scotia

Page 10: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Marconi’s spark transmitter, 1910

Page 11: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Steam engine and alternator

Page 12: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Two of four 5 kV DC generators

Page 13: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

12 kV stand-by battery (6000 cells! 2 GJ stored energy!)

(cf. RAL SC3: 5 J)

Page 14: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Marconi’s 1920 valve transmitter

Page 15: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1515

Alternating voltages, currents, electric fields, magnetic fields, ...

Need to describe by three quantities

Frequency, amplitude and phase

E.g. three-phase AC mains:

All phases “240 V”

But different phases are very different!

Phase varies along a wire carrying alternating current

How much phase changes depends on wavelength and hence on frequency

Page 16: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1616

y = sin (2 f t + )

-1.0

-0.8

-0.6

-0.4

-0.2

0.0

0.2

0.4

0.6

0.8

1.0

0 90 180 270 360 450 540 630 720 810 900 990 1080

Degrees

Am

plit

ud

e

Alternating voltage V(t) = A sin (2 f t + )

= 240° 120° 0°

E.g. three-phase AC mains

Phase

Page 17: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1717

50 Hz AC mains in house

4000 miles

House

Page 18: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1818

200 MHz RF in ISIS linac

5 feet

2½ feet

Positive

Negative

Page 19: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1919

Why is RF used at all in accelerators?

Cathode ray tube in TV set doesn’t need RF

Page 20: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2020

Particles accelerated using electric field

For 100 keV can use 100 kV DC power supply unit. Even 665 kV for old Cockcroft-Walton

But 800,000,000 V DC power supply unit for accelerating protons in ISIS not possible

Instead, for high energies, use RF fields, and pass particles repeatedly through these fields

RF fields produce bunched beamsDC

RF ns – µs spacing

Page 21: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2121

Air

Sound waves set up inside

milk bottle

RF

Electromagnetic waves set

up inside hollow metal

cylinder

Page 22: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2222

RF

Page 23: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2323

+ – + – + – + – + –

RF

Page 24: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2424

Page 25: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2525

– + – + – + – + – +

Page 26: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2626

Page 27: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Interior of linac tank

Page 28: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2828

How much RF power? All beam power from RF

ISIS mean current 200 µA

Linac 70 MeV 70 MeV × 200 µA = 14 kW

Synchrotron 800 MeV 800 MeV × 200 µA = 160 kW

So need >14 kW RF for linac,>160 kW RF for synchrotron

Linac pulsed, 2% duty factor 14 kW ÷ 0.02 = 0.7 MW

Synchrotron pulsed, 50% duty factor160 kW ÷ 0.50 = 0.3 MW

Page 29: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

2929

Two commercial 0.5 MW short wave

radio transmitters

Page 30: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

3030

RF powers

Big radio and TV transmitters 0.5 MW

Mobile phone transmitters 30 W

Mobile phones 1 W

Sensitivity of mobile phones 10–10 W

ISIS linac 3 × 2 MW + 1 × 1 MW

ISIS synchrotron 6 × 150 kW + 4 × 75 kW

Page 31: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

3131

Where does RF power come from?

Big amplifiers

Usually purpose built

The basics:

Accelerator

RF amplifier

Frequency source

Page 32: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

~1 W RF ~1 MW RF

Page 33: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

3333

Devices that amplify RF

Transistors~100 watts maximum per transistorCouple lots together for kilowatts

Valves / vacuum tubesTriodes, tetrodesLargest can deliver several megawatts (peak)

KlystronsHigh powers, high gainsLimited to frequencies >300 MHz

IOTs (inductive output tubes)Often used in TV transmitters (esp. digital TV)Output limited to ~50 kW

Page 34: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

3434

Transistors usually junction transistors (NPN, PNP)

Essentially minority carrier device

But RF transistors usually field effect transistorsMajority carrier device

Page 35: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Field effect transistor

Page 36: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Typical RF MOSFET

Page 37: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Solid state RF amplifier: few watts in, 3 kW max out

Page 38: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

3 kW max. solid state amplifier mounted in rack

Page 39: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

1 kW solid state driver RF amplifier for synchrotron

Page 40: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Valves / vacuum tube made in 1915

Page 41: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Basic triode circuit

Load

Anode power supply

+

Anode

Heater

Cathode

Grid

Electrons

Page 42: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Valve-based audio hi-fi amplifiers

Page 43: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Debuncher amplifier: commercial TV transmitter

Page 44: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Linac triode5 MW peak

75 kW mean

Synchrotron tetrode

1000 kW peak350 kW mean

Page 45: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

4545

Typical valve parameters at ISIS

TH116 4648Type Triode TetrodeHeater 20 V, 500 A 4 V, 1600 AAnode volts 35 kV 16 kVAnode current 175 A 8 APeak power o/p 2 MW 75 kWMean power o/p 40 kW 40 kWCooling water 100 l/min 200 l/min

Page 46: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

4646

Resonant circuits

Parallel LC-circuitImpedance Z “infinite” at f = f0(2f0)² = 1 / LCL C

length l

Shorted lineImpedance Z “infinite” at l = /4, 3/4, 5/4, ...

Only ratio of diameters matters

Page 47: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

4747

Output

Input

HT (+ve)

AnodeScreen gridControl gridCathodeHeater

Tetrode

Essence of a tuned RF amplifier — 1

Page 48: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

4848

Output

Input

HT (+ve)

AnodeScreen gridControl gridCathodeHeater

Tetrode

Essence of a tuned RF amplifier — 2

Page 49: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

ISIS RFQ 200 kW tetrode driver

Input (grid) tuned circuit

Output (anode) tuned circuit

Tetrode

Page 50: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

5050

Klystron gain ~50 dB (× 105 power gain)

E.g. 10 W in, 1 MW out

IOT gain ~25 dB (× 300 power gain)

E.g. 200 W in, 60 kW out

Page 51: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Toshiba E3740A 3 MW 324 MHz klystron

5 metres, 3 tons

Page 52: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

5252

Skin depth

RF currents flow in surface of conductor only

Skin depth 1 (frequency) (exponential)

In copper, = 7 / (frequency) (cm)

50 Hz 1 cm

1 MHz 70 µm

200 MHz 5 µm

In sea water

50 Hz ~100 feet ELF / submarines

10 kHz ~10 feet VLF / submarines

Page 53: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

ISIS RFQ — vessel copper-plated stainless steel

Page 54: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Different currents on different

surfaces of same piece of metal

Linac high power RF amplifier

Page 55: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

5555

– + – + – + – +

Electric field

Dielectric material

No external electric field

Atoms

Page 56: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

5656

Dielectric material

Dielectric constantCeramic 6Nylon 3Perspex 3½Polystyrene2½Water 80

Loss tangent — leads to dielectric heatingCeramic 0.001Nylon 0.02Perspex 0.01Polystyrene0.0001Water 0.1 — microwave ovens

Page 57: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

5757

RF amplifier

Accelerating cavity

BeamVacuu

m

Air

Air Vacuum

RF

Window

Page 58: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

RF feed to linac tank

Page 59: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Window and aperture

Page 60: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Good and failed RF windows

Page 61: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Linac RF block diagram

Low level RF

Cavity n

RF amp. chain

Tuner

V ref. accel. fieldPhase comp.

Volt. comp.

Phase comp.

Motor drive

beam

Servo systems on amplitude, phase and cavity tuning

Page 62: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Three amplifiers in previous slide

Page 63: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Synchrotron high power RF systems

Page 64: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Synchrotron low-level RF systems block diagram

Beam compensation loop

Phase loop

Voltage loop

Frequency sweeper

Cavity tuning

Page 65: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Driver amplifier

Page 66: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

Cavity and high power RF driver

Page 67: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

High power RF drive

Page 68: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

6868

ISIS depends almost entirely on RF

Earth

↓ DC 0.004%

35 keV

↓ RF

665 keV

↓ RF 99.996%

70 MeV

↓ RF

800 MeV

Page 69: ISIS OPTIMVS NEVTRONVM SPALLATIONENSIVM FONS MVNDI Introduction to RF at ISIS ISIS Lecture, 16 February 2006 David Findlay Accelerator Division ISIS Department.

6969

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7070

Supplementary detail

RF transistors — hand-wavingElectron and hole mobilities in Si ~1000 (cm/s)/(V/cm)Breakdown field strength in Si is ~300 kV/cmSo maximum speed of electron or hole in Si is ~3×10^8 cm/s = 0.01 cIn big transistor say characteristic size = 1 cmSo electron or hole would take ~3 ns to travel across/through transistorRF period must be >> 3 ns, say 10 ns, thereby limiting RF frequency to 100 MHzIf make transistor bigger to dissipate more heat, then more and more limited in frequency


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