J AblJoe Abler Common PlatformEcosystem Enablement

IBM provides a complete Foundry solutionIBM provides a complete Foundry solution• Innovative technology

Leadership road map with advanced SiGe & RF offerings– Leadership road map with advanced SiGe & RF offerings– Leading-edge CMOS process development – SoC and integration of analog / RF functions– Silicon-on-insulator (SOI) and strained silicon expertise

• World class enablement– Accurate model-to-hardware correlation can result in fewer design passes– Experienced local & factory support

• Manufacturing expertise– Robust line control– Continuous process yield and defect density learningp y y g

• Collaborative ecosystem– 90nm, 65nm, 45nm, and 32/28nm Common Platform™ technology collaboration with Chartered Semiconductor , , , gy

Manufacturing and Samsung– Common Platform Solution Provider and Ready for IBM Technology networks– Industry-standard libraries and 3rd party IP development programIndustry standard libraries and 3 party IP development program– IBM Microelectronics and 3rd party design services

Collaboration for innovationCollaboration for innovation…A value creator for the semiconductor industry

Technology Collaborations

Joint chipdevelopment

alliance

CommonPlatform

manufacturing

Research IBM, GLOBALFOUNDRIES, Toshiba, STMicroelectronics, NEC

SOI development IBM, GLOBALFOUNDRIES, Freescale

IBMChartered Samsung

p , ,

CMOS developmentIBM, Chartered Semiconductor Manufacturing, Samsung Electronics, Infineon STMicroelectronics Toshiba

Toshiba NEC

Infineon, STMicroelectronics, Toshiba, NEC, GLOBALFOUNDRIES

Common Platform™ IBM Chartered and Samsung

GLOBAL FOUNDRIESInfineon Platform

manufacturingIBM, Chartered and SamsungFOUNDRIES

Freescale STMicro

90 65 45 32 22Leadership semiconductor solutions

90 nm 65 nm 45 nm 32 nm 22nm

From research breakthroughs to real-world solutionsFrom research breakthroughs to real world solutions

Worldwide Advanced SemiconductorFundamental Technology

Manufacturing

Process

SemiconductorR&D

Innovation in Screen new

Research gy

Development

Multi-companysynchronized fabricators (GDSII compatible)

integrated device & process technology

materials & processes

Multi company co-located joint development

High perf SOIIBM & Chartered

EquipmentApplied Mat’ls, ASML, Tokyo Electron

Patterning solutionsHigh-k / metal gateDevice structuresStress techniques

High perf SOIIBM, Freescale, GLOBALFOUNDRIES

Foundry bulkIBM, Chartered & Samsung

ResearchIBM, Toshiba, NEC, STMicro, NEC,

ElectronStress techniquesInterconnectsUltra low-kPackaging

Foundry bulkIBM, Chartered,Samsung,Infineon STMicro

USA, Korea, Singapore

STMicro, NEC, GLOBALFOUNDRIES

Albany Nanotech Center

IBM Almaden & Yorktown

Infineon, STMicro, Toshiba, NEC, GLOBALFOUNDRIES

IBM East Fishkill

Realizing Innovation…32/28nm High-k/Metal Gate Technologyg g gy28nm HKMG Low Power Technology released for Early Access

200300

Metal Gate

ARM shows off 32nm mobile processor

Performance/power advantages validatedApril 200910

nt O

xide

s (n

m)

100

200

ngth

(nm

)

High-k

ARM, Chartered, IBM and Samsung Collaborate to

ARM shows off 32nm mobile processor February 2009

1

Equ

ival

enTh

ickn

ess

20

30405040nm

1.15 nm Gat

e Le

n

Enable Energy-Efficient 32 and 28nm Systems on ChipSeptember 2008

Technology Design Alpha Level Kit released32HKMG45250 130 65180 90

Technology Node (nm)

10

1400 SiON T 25°C

Technology Design Evaluation Kit released

Technology Design Alpha Level Kit releasedJuly 2008

gy ( )

HK/MG Opt., T=25C-32%

optimized

800

1000

1200

1400

erg

y (

fJ) SiON, T=25°C

HKMG, T=25°C

44%

32 nm gate-first, HKMG technology announced including functional

Performance/power advantages validatedApril 2008

+50%200

400

600

800

ctiv

e E

ne

33%

announced, including functional 32 nm bulk & SOI SRAM (<0.15 µm2).

December 2007

+50%

0

200

0 100 200 300 400 500 600Frequency (MHz)

Ac

Innovative high-k metal gate (HKMG) technology announced.

January 2007

CP & ARM Joint CollaborationCP & ARM Joint Collaboration32/28nm Leadership Enablement

“ARM and Common Platform Collaborate to Enable Energy Efficient 32/28nm SoC”

• Optimized 32/28nm High-k Metal Gate Design Platform• High performance, power efficient ARM SoC

I l t tiImplementations• High K – leadership in performance and power

• Targeting exploding Mobile Internet Device market• Competitive advantage for mutual licensees/clients

• IBM grants early access to 32nm Bulk technology• ARM will supply enhanced physical and core IP supp y e a ced p ys ca a d co e

differentiated for the JDA technology

Market RequirementMarket Requirement• Mobile internet leads the convergence of PC-Mobile domains

– Mobile devices need higher CPU performance ( > GHz )

PC/Notebook WW Mobile Device Market

– Mobile devices need higher CPU performance ( > GHz )– PC/Notebooks need lower cost / lower power consumption

PC/Notebook

Lower Cost2.00 Billion

Units

WW Mobile Device Market(2007 ~ 2012)

Lower CostLower Power Net-Book MID

1.50

Units

Smartphone/ MID

SmartphoneMobile InternetConvergence 1.00

/ MID

EnhancedHigher CPUPerformance 0.50

EnhancedPhone

Basic

Mobile

0.002007 2008 2009 2010 2011 2012

Phone

Mobile (Source: S.LSI MKT, Gartner 2008)

Slide Source Samsung

GHz Era of Mobile ProcessorsGHz Era of Mobile Processors• 32nm HKMG opens the GHz era of mobile processors• Lower power & smaller geometry enables multi core integration• Lower power & smaller geometry enables multi-core integration

Performance of mobile devices will be comparable to today’s PC

Mobile Processor Clock Speed

> 1 GHz32nm HKMG

Mobile Multi-core using 32nm

~Same Area

3

432nm HKMG 45nm

Single CoreCPU

32nmDual Core

CPU

Same Area

2

3

~800MHz32nm SiON

Dual CoreDual Core PerformancePerformance PowerPower

[Comparison to 45nm single core]

1 - All TR’s are RVT forminimum leakageCl k d@ 30

Option 1Option 1 1.7 X1.7 X 1 X1 X

Option 2Option 2 2.8 X2.8 X 2 X2 X

32nm130nm 90nm 65nm 45nm

- Clock speed@130nm = 1

Further integration (ex. Quad-core) willlead to PC-comparable performancewith ultra low power ( < 2W )with ultra low power ( < 2W )

Slide Source Samsung

Leading Implementation Needs PartnershipLeading Implementation Needs Partnership• ARM IP on advanced foundry process uses integrated design

Architecture through to RTL isco-designed with physical IPPhysical IP is tightly coupled with

Architecture

Physical IP is tightly coupled with process technology developmentRTL Coding

Physical IP

Optimization

Physical IPImplementation

1+ GHz in 32nm Low Power processPerformanceOptimizationDFM 2+ GHz in 32nm Generic process

ARM Processor & Physical IP

Performance Yield

Process Development KitARM Processor & Physical IP

Advanced HKMG ProcessTransistor / Bitcell / Interconnect

Manufacturing Process

Innovation and industry leadership through collaboration

g

Slide Source ARM

CP/ARM Collaboration OverviewCP/ARM Collaboration Overview

nnel

Std-Cell Libraries

Enhanced

Innovation and industry leadership through

collaboration

es C

hanMemories

IO

IO Libraries

Core IPARM ProcessorARM Processor

Transistor/Transistor/BitcellBitcell/Interconnect/Interconnect

ARM Physical IPARM Physical IP Common Platform Advisory and

M k ti

Processor Optimized IP ire

ct S

al

RF1RF1RA1RA1

Optimized Cells

Optimized Memories

TechnologyTechnology

Early Access

Marketing Agreement

y A

RM

DCustom Blocks

yAgreement

Enhanced Physical IP

Driv

en b

y

RF1RF1RA1RA1

Optimized Cells

Optimized Memories

Enhanced IP Agreement

Advanced Node Technology

Development

Optimized Techniques for

Building Physical IP at

Advanced

DCustom Blocks

Foundation Std-Cell

Optimized for IBM 32/28nm HKMG LP bulk technology

Program Nodes

RF1RF1

RA1RA1

Libraries

RF2RF2

RA2RA2

Memory Compilers

FoundationPhysical IP Agreement

Foundry Licensed

End User LicensedIO

IO Libraries

Slide Source ARM

In today’s environment it takes an ecosystemIn today s environment, it takes an ecosystemComprehensive support throughsupport through the Common Platform model

D i t

Packaging

DesignCompatibility

Design center collaborators

R f

GDSII

p y

Libraries

Reference design flows

GDSIICompatibility

Libraries and IP UnUniquifyquify

ASIC design & IP solutions

Process andmanufacturingcompatibility D i l

Technology design kits

compatibility

90 nm 65 nm 45 nm

Design manual SPICE models

90 nm, 65 nm, 45 nm, 32 nm process

platforms

Thank youThank you• Explore more about IBM and related IP at ChipEstimate.com orExplore more about IBM and related IP at ChipEstimate.com or

CommonPlatform.com

• Use IP specific to IBM to plan your next chip!

• Please stay and talk with Joe Abler

12