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©2015 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including regarding their features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners. About Micron ©2015 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including regarding their features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners. 2016 Economic Outlook and Revenue Assessment Committee Jayson Ronk State Government Affairs Director
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Page 1: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

©2015 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including regarding their features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

About Micron

©2015 Micron Technology, Inc. All rights reserved. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Statements regarding products, including regarding their features, availability, functionality, or compatibility, are provided for informational purposes only and do not modify the warranty, if any, applicable to any product. Drawings may not be to scale. Micron, the Micron logo, and all other Micron trademarks are the property of Micron Technology, Inc. All other trademarks are the property of their respective owners.

2016 Economic Outlook and Revenue Assessment Committee

Jayson Ronk State Government Affairs Director

Page 2: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Micron at a Glance

FoundedOctober 1978, Boise, Idaho

FY2014 Net Sales$16.2 billion

NASDAQ SymbolMU

Employees~30,000 worldwide

Patents~26,000

MEMORY MAKES IT POSSIBLE

1/8/20162

Products and solutionsAutomotive SolutionsClient SSD StorageData CenterEmbedded MemoryEnterprise SSD StorageMobile Memory SolutionsNetworking InnovationsSupercomputing MemoryUltrathin Solutions

Markets we serveComputingNetworkingServerCloud / EnterpriseConsumerMobileAutomotiveFinancialOil and GasMediaMedicalGovernmentTelecom Service ProvidersIndustrial applications

Page 3: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Corporate Headquarters and R&D FacilitiesBOISE, ID

1/8/20163

Page 4: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.4 1/8/2016

Page 5: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

Micron Corporate Leadership

Mark DurcanCEO

Page 6: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Micron Milestones

1/8/20166

1978 1980 1981 1984 1987 1994 1996 1998 1999 2002 2004 2005 2006 2007 2008 2010 2011 2012 2013 2015

Micron Technology Inc. founded

First 64K DRAM product ships

1-megabit DRAM product introduced

Crucial Technology created to market to end users

Micron Foundation established

First 2-gigabit NAND flash product ships

Acquired Lexar Media

Micron, Nanyaform DRAM joint venture

Hybrid Memory Cube technology debuts

Micron announced development of Automata Processor

Acquires ElpidaMemory and RexchipElectronics

Ground broken on first

wafer fabrication

plant in Boise

World’s smallest 256K

DRAM product introduced

Micron publicly traded

on Nasdaq

Micron named a Fortune 500

company

Acquires Texas Instruments’

worldwide memory

operations

First 1-gigabit DDR DRAM

demonstration

Acquired Toshiba’s

DRAM operations in

Virginia

Micron and Intel form

NAND joint venture in

Flash technology

RealSSD family of solid state

drivers introduced

Acquired NOR manufacturer

Numonyx

Exclusive rights to

Inotera output acquired

Ground broken on

expansion in Singapore

100K sq ftexpansion begins of

Boise R&D facility

Revolutionary 3D XPoint

technology unveiled

Page 7: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Micron Has Driven Memory Industry Consolidation

7 * Total Memory includes DRAM, NAND & NOR

DRAM+ NAND+ NOR

Developers

DRAM+ NAND

Developers

SingleMemory

Developers 1%

1%

2%

7%

10%

20%

22%

38%

0% 10% 20% 30% 40%

Macronix

Winbond

Nanya

SanDisk

Toshiba³

Micron²

SK Hynix

Samsung³

Source: Micron and Industry Analysts

Micron data is FQ1‐15 – FQ4‐15; Competitor data from CQ4‐14 – CQ3‐15.1Group total defined as only those companies listed on this page, although others may also exist.2Micron Includes NAND sold to Intel from IM Flash3Samsung and Toshiba include total memory revenue as reported.

Top Five Market Share: 97%

1/8/2016

LTM Memory Revenue (% of Group Total)1Memory Market Consolidation

Page 8: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Micron Has Global Manufacturing Scale

1/8/20168

2

Lehi, Utah USA Manassas, VA USA

3

13

2

4

5

6

7

8

9

10

11

4

Agrate, Italy

Hiroshima, Japan

10

Akita, Japan

11

5

Muar, Malaysia

9

Xian, China

7

Taiwan (Inotera)

6

Singapore

8

Taiwan

1

Boise, Idaho USA

Page 9: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Source: Micron Technology, Inc. 2014 Form 10-K

Europe Asia(including China, Japan, Asia Pacific, Malaysia, and Taiwan)

Americas(including US and others)

Micron FY15 Revenue % by Geography

1/8/20169

8% 18%

74%

Page 10: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

SDRAMDDRDDR2DDR3DDR4RLDRAM®

Mobile LPDRAM

DRAM Families

FBDIMMRDIMMVLP RDIMMVLP UDIMMUDIMMSODIMMSORDIMMMini-DIMMVLP Mini-DIMMLRDIMMNVDIMM

DRAM Modules

Bare DieMultiple Technologies

NAND FlashTLC, MLC, SLCSerial NANDEnterprise NANDNAND MCP3D NAND Solid State Drives

Client SSDEnterprise SATAEnterprise SASEnterprise PCIe

Managed NANDMCPeMMC™Embedded USB

NOR FlashParallel NORSerial NORNOR MCP

And an expansive product offering

1/8/201610

Page 11: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Leading with new innovations: 3D NANDHOW 3D NAND ENABLES INNOVATION

How did we do it?We’re the first to employ floating gate cell technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage tiers to achieve the highest-capacity NAND die available today: 256Gb multilevel cell (MLC) and 384Gb triple-level cell (TLC) 3D NAND.

Our 3D NAND solutions bring significant performance, power, and capacity advantages to storage applications

Pack in More CapacityGet 3 times the capacity of existing NAND products—enough to enable 3.5TB gum stick-sized SSDs or more than 10TB in standard 2.5-inch SSDs.

Boost PerformanceAchieve significantly higher read/write bandwidth and I/O speeds, as well as improved random read performance, thanks to our 3D NAND’s fast 4K read mode.

Save PowerReduce power consumption significantly in standby mode thanks to 3D NAND’s new sleep mode features that cut power to inactive NAND die (even when other die in the same package are active).

1/8/201611

Page 12: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Leading with new innovations: 3D XPoint™ Memory

Combining the very best capabilities of existingtechnologies, 3D XPoint has the potential to dramatically transform computing architectures

FIRST NEW MEMORY CATEGORY IN DECADES

1000XFASTER

THAN NAND

1000XENDURANCE

OF NAND

10XDENSER

THAN CONVENTIONAL MEMORY

Page 13: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

We breed award-winning innovation

1/8/2016

TechInsights Most Innovative Memory

Device and Semiconductor of

the Year - 2014

Inducted to Idaho Technology

Council Hall of Fame - 2015

Ranked No. 1 on Top 50 Employers in

Electronic Design magazine - 2015

13

Page 14: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Non-PC$35B

PC $10B

NAND$31B

NOR$2B

Worldwide semiconductor market$338B

DRAM$45.4

Flash$33.1

Source: Gartner 3Q15

2015 Semiconductor Market Forecast

1/8/201614

Page 15: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Five Big Technology Trends

1/8/2016

Big DataCloudNetworking Mobile

MachineTo

Machine

15

Page 16: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

8% 5% 5%

11%11% 13%

2%3%

3%

20%27% 21%

9%7%

8%

5%4%

5%

8% 5%6%

20%14% 15%

14%23% 23%

3% 1% 1%

0%

10%

20%

30%

40%

50%

60%

70%

80%

90%

100%

FY13 FY14 FY15

% of M

icron To

tal R

even

ue

Source: Micron

We Serve Diverse End MarketsMICRON END-MARKET REVENUE DIVERSIFICATION

1/8/201616

End Market

Other

SSD Storage

Other Storage

AIMM

Mobile

Compute

Networking

Other Embedded

Server

Graphics

Page 17: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Enterprise PCIe SSD

Micron’s Portfolio, Solutions, and Customer Engagement

1/8/2016

• DRAM

• NAND

• Emerging Memory

• Packaging

Solutions and Products

Innovative Technology

Business Unitsand Sales

DiverseCustomers

CNBUCompute & Networking Business Unit

17

1Xnm DRAM

3D NAND

Through Silicon Via(TSV)

3D XPoint™Client/PC SSD

High Performance DRAM Modules

Flash Cards and USB Drives

EBUEmbedded Business Unit

SBUStorage Business Unit

MBUMobile Business Unit

Mobile DRAM/NAND

Packages

Server DRAM Modules

Low Power DRAM

Page 18: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Continuing to Invest in Idaho

)

1/8/201618

$200M Expansion of R&D Facility

Page 19: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

© 2015 Micron Technology, Inc.

Continuing to Invest in Idaho

19

$25M Micron Foundation gift to create new Materials Research Center

1/8/2016

Page 20: JRonk 2016EOC 10616 [Read-Only] - Idaho Legislature · technology in 3D NAND—a proven cell technology that enables better performance, quality, and reliability. We stack 32 storage

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