Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Latest Ruggedized Transducersfor Extreme Environments withStatic and Dynamic Capability
A.D Kurtz, and A.A. Ned
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Industry RequirementsTemperatures Up To and Above 650°CHarsh Environments
Acceleration Greater Than 1000gCorrosive/Oxidizing
Static and Dynamic Measurement
High Frequency Response
Vibration and Acceleration Insensitivity
High Pressure >50,000 SOI Transducers
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
“Silicon Is The Ideal Choice”
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Silicon (SOI) Integrated Sensors
PIEZORESISTORP-TYPE DIFFUSEDMONOCRYSTALLINESILICON STRAIN GAGE
PIEZORESISTORP-TYPE DIFFUSEDMONOCRYSTALLINESILICON STRAIN GAGE
P-N JUNCTIONISOLATION
COMPLETEOXIDEISOLATION
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Clamped Area
Boss
Si
SiO2
Diaphragm Side Isometric of Sensor Chip
Resistor Gauges in the Thin Region P+
Pattern
SiO2
Si
Gauge Side Isometric of Sensor Chip
Silicon SOI Integrated Sensors
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Sensor OptimizationSensor Performance Characteristics High Temperature Capability
Harsh Environment Capability – Leadless
Ruggedized Construction
Electrical InterfaceDielectric IsolationMechanical Assembly
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Leadless Sensor DesignPatented Design
Eliminated Wirebonds
Hermetically Sealed Piezoresistive Network
All High Temperature Materials
Contact Thru Holes
Glass Contact Wafer
Cavity to enable diaphragm deflection
Contacts
Rim for Hermetic Sealing
SiO2
Si
P-type diffused monocrystalline Si piezoresistors (4)
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Side View of the “Leadless Chip Composite”after Filling with Glass-Metal Paste for
Contacting
SiO2
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Leadless Packaging
2
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
High TemperatureLeadless Assembly
Header & Sensor
Screw Housing
Sleeve
Insulators
Rear InterconnectHeader
Cable Relief
Crimp Ring
High TemperatureCable
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Sensor PerformanceSOI SENSOR PERFORMANCE UPTO 670°C
01345789
111213
0 50 100Pressure (PSI, G)
Net
Out
put (
mV)
Temp. (25.2°C) Temp. (500°C) Temp. (550°C) Temp. (600°C)Temp. (625°C) Temp. (650°C) Temp. (670°C)
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Dynamic PerformanceEvaluated Sensors Ranging From 5 psi to 1000 psi
Excellent Dynamic Performance
Dynamic Response Ranged From 150 KHz to MHz Range
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
HIGH TEMPERATURE MINIATURE RUGGEDIZED PRESSURE TRANSDUCERS WITH SEPARATE STATIC AND DYNAMIC OUTPUTS
ETLH-SR-190Miniature, Robust Construction
High Temperature
Acceleration & Vibration Insensitive
High Bandwidth Amplifier (150 KHz)
Separate DC and AC Outputs
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
g-insensitive Pressure Transducer-US Patent Application Allowed 9/459,238
-Testing by Roger Ainsworth, University of Oxford
-G-sensitivity: < .000001% FS/g vs. old style: .0004% FS/g
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Resonant Beam ApparatusResonant Beam
Output Acceleration
InputAcceleration
Accelerometer
Device Under Test
Vibration Table
I = bh3
12
K=3EIL3
fR ≈ (1/2π) √ [ K G/W]
R = __1_____1 – (f/fr) 2
h
L b
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
Mechanical Robustness Evaluation
All Transducers Evaluated Up To 1000G for long term use.
Extreme G-Level transducers are established.
For Measurement In High Acceleration/Vibration Environments the Vibration Insensitive Sensor (VIS) Should Be Incorporated.
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
HKM-15-500 (M) SeriesExcellent Stability
All Welded Construction
Robust Construction
High Natural Frequency
MINIATURE ULTRA HIGH PRESSURE IS®
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
ULTRA HIGH TEMPERATURE AMPLIFIED MINIATURE IS®ETM-UHT-375(M)
Smallest High Performance Amplified Transducer Worldwide
Highest Temperature Electronics 500˚F (260˚C)
Rugged Design Provides Compatibility with Most Corrosive and Conductive Media
High Bandwidth
Kulite Semiconductor Products, Inc.Presented at the 22nd Transducer Workshop
Fort Worth, TX June 20-21, 2006
SummaryLatest Generation of High Temperature Leadless Transducers Designed, Fabricated and EvaluatedOperability Above 650ºC DemonstratedSOI Leadless Design – Harsh Environments
Excellent Static PerformanceExcellent Dynamic PerformanceHighly Robust DesignTruly Vibration Insensitive
Suitable To A Variety Of Transducer Applications.
