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LED Applications and Driving Techniques
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© 2007 National Semiconductor Corporation
Content
• LED Basics• LED Applications• LED Driving Techniques• LED Dimming and Contrast Ratios• Lighting Resources and Tools
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LED Basics
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© 2007 National Semiconductor Corporation
What is a LED?
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© 2007 National Semiconductor Corporation
LED Development
5mm Lamp2-3 lumensIf = 30mA
1970
SuperFlux4-8 lumensIf = 70mA
1992
Luxeon20-40 lumens
If = 350mA
1997
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© 2007 National Semiconductor Corporation
Materials used in color LEDs
White LED:
White light is generated by blue LED strike on a phosphor coating.
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© 2007 National Semiconductor Corporation
White LED Structure
BROAD RANGE PHOSPHOR
From LED
From phosphor
BLUE InGaN DIE
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© 2007 National Semiconductor Corporation
LED Advantages
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© 2007 National Semiconductor Corporation
Characteristics of LEDs
Forward Voltage (VF) drop across LEDSimilar to a diode
Wavelength variationsCrystal and junction growth defects
Brightness variationsCrystal defects resulting formation of phonons and non-radiation energy transfer
Temperature Junction temperature of the device affects each of the parameters above
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© 2007 National Semiconductor Corporation
Temperature effect onLED Parameters
As Temperature increases:• Light output decreases• Wavelength gets longer• Forward voltage decreases
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LED Applications
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© 2007 National Semiconductor Corporation
LED Applications
• Old days– Signal Indicators– Numeric and Alpha-numeric displays
• Nowadays– Automotive– Backlights– Flashlights for portable devices– General illumination– Projector Light Sources– Signage– Torch Lights– Traffic Lights
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© 2007 National Semiconductor Corporation
Many New Applications Have Emerged Because……
• High Brightness LEDs create many new possibilities.
• Typical spec. of HB LED– 1 Watt LED
• Full intensity 350mA, Maximum current 500mA• 2.8V Volt drop @ 350mA
– 3 Watt LED• Full intensity 700mA, Maximum current 1A• 4.3V Volt drop @ 700mA
– 5 Watt LED• Full intensity 700mA, Maximum current 1A• 7.1V Volt drop @ 700mA
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© 2007 National Semiconductor Corporation
Structure of High Brightness LED
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LED Driving Techniques
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© 2007 National Semiconductor Corporation
Signal Problem Power Problem
• What has changed?– ILED = 20mA 350mA+– VF = 2V 3V+
MCUVcc
+5V
220Ω
ILED = 20mA
2N3904
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© 2007 National Semiconductor Corporation
LED Driving Circuit ……
• Delivers a constant average current under all conditions (eg. input voltage change, temperature change, VF change……).
• Controls ripple current at acceptable level under all conditions.
A LED driving circuit is a type of power conversion circuit butit delivers constant current instead of constant voltage
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© 2007 National Semiconductor Corporation
Average Current and Ripple Current
• Iav1 > Iav2, thus Iav1 is brighter than Iav2 but color tone also changes.• Human eye cannot detect I, ripple current changes as long as it is
within 20% of the average current.
ILED
Iav1
Iav2I
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© 2007 National Semiconductor Corporation
Driving Methods –Circuit Configuration
• Relatively expensive• Circuit complexity
High efficiencySwitching Regulation
• Poor efficiency• Heat dissipation at driver IC
SimpleLinear Regulation
• Current varies as VF changes• Poor efficiency• Heat generation at resistor
Inexpensive, Simple
Resistor Limiting
ConsProsDriving Method
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© 2007 National Semiconductor Corporation
Driving Method –Series LED Connection
• Pros:– Matching Guaranteed– Most efficient drive method– Easy to route (Only 1 or 2 connections
between driver and LEDs)
• Cons– High voltage output is
needed– Output capacitor typically
large due voltage requirement
GND FB
VSWVIN
VOUT
Rballast
With external ballast With internal current sinkTypical Backlight Flex print with LED in series
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© 2007 National Semiconductor Corporation
• Pros– Workable with low-voltage
semiconductor processes– Can work with common anode
or common cathode module
• Cons– Good matching requires regulated
current sources– Requires 1 connection per each LED
i.e. driver IC requires more pins
Driving Method –Parallel LED Connection
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© 2007 National Semiconductor Corporation
Boost LED Driving
• Vout must be higher than Vin.
• Output capacitor is a must.
• Typical Application: LCD backlight for portable product.
TON
T
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© 2007 National Semiconductor Corporation
True Shutdown Isolation
• Method 1– Add switch in return
path.
• Method 2– Synchronous
rectification.
A switch is added to cut off leakage path
during shutdown
Diode is replaced by MOSFET and it is switched
off during shutdown
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© 2007 National Semiconductor Corporation
Buck LED Driving
• Vout must be lower than Vin.
• Output capacitor is optional.
• Typical Application : general lighting.
TON
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© 2007 National Semiconductor Corporation
Bucking and Boosting
• High power LEDs are being adopted into portable lamps (bicycle, mining, flashlight) with varying battery number and chemistry
• Low-voltage AC lighting (garden path) varies due to I2R loss
• Combine varying VIN with VF that changes with process and temperature
• Requires true buck-boost regulator
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© 2007 National Semiconductor Corporation
Buck-Boost Driving: SEPIC Regulator
• Uses standard low-side regulator/controller
• Low-side or high side current sensing
• Requires two inductors or coupled inductor
• Requires an output capacitor
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© 2007 National Semiconductor Corporation
‘Floating’ Buck-Boost Regulator
• Uses only one inductor
• VO is controlled WRT VIN
• Requires high-side sensing for accurate IF control
Basic Low-Side MOSFET
Controller
FB
VIN NGATE
GND
IN
VO = VIN + VF
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LED Dimming and
Contrast Ratios
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© 2007 National Semiconductor Corporation
LED Brightness Control Methods
Brightness can be controlled directly by changing the LED current or indirectly by shutting on and off the LED fast enough to create perception of dimming by the human eye.
• Analog Brightness Control – current alternation.– Not preferred because color tone will change.
• Digital Brightness Control – PWM on/off.– Preferred method.
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© 2007 National Semiconductor Corporation
PWM Dimming Control
• PWM signal (EN/SD pin, FET, or special PWM pin)– “Strobing” LEDs at frequencies >100Hz results in
reduced brightness, as perceived by the eye. Eye filters/averages brightness
– “Average” Brightness proportional to Duty Cycle (D): D = tON ÷ T
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© 2007 National Semiconductor Corporation
Low Power LED Dimming
• Best choice is a linear regulator with an inline switch
• Can expect rise and fall times of < 100 ns
• Dedicated LED driving linear regulators have multiple channels
• Should also include a feedback signal to adjust input voltage for VF tolerance and drops due to rising LED die temp
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© 2007 National Semiconductor Corporation
Adjusted automatically to the lowest possible to
maximize efficiency
V
Temperature
VREG
VLED
VRAIL
Power loss
Always kept to a minimum
VLED
VREG
VIN
LM3432
CDHC
VCC
IREF
PWM
EN
M O D E
F A U L T b
O T M b
VDHC
IOUT1
IOUT2
IOUT3
IOUT4
IOUT5
IOUT6
LM3430
VCC VIN
UVLOSSRT/SYN
OUT
CS
GND
FB
COMP
3X3mm0.8mm(H)
PWM SIGNAL
VIN=6~40V SW. FREQ. Up to 2MHz Up to 80V
ON
OFF
5X4mm0.8mm(H)
DIRECT FROM VIN
VDHC
LM3430+LM3432 Solution
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© 2007 National Semiconductor Corporation
High Power LED Dimming
• Use buck regulator whenever possible
• Only the buck can eliminate the output capacitor*
• No RHP zero means fastest control loops (when using PWM regulators)
• Easy implementation of hysteretic and constant on-time (COT) control– Even faster loops!
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© 2007 National Semiconductor Corporation
Controlling Color
• Colored LEDs shift their peak wavelength as IF changes
• Requires control of IFand ∆iF
• Accuracy of IF is highly dependent on the application
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© 2007 National Semiconductor Corporation
CCT(Correlated Color-Temperature) Shift
1W LED driven at 50 mA continuous
Same 1W LED driven at 300 mA with 1/6th duty cycle (500Hz)
More Yellow More Blue
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© 2007 National Semiconductor Corporation
Contrast Ratio
• Ideal Contrast Ratio is a Wishful Thinking
• Contrast Ratio is defined as 1/DDIM(MIN) .
• Contrast ratio is a measure of the system response to a dimming signal. The higher the contrast ratio, the more precise the control over light output. This term has been co-opted as a buzzword in the display industry.
• Contrast ratio is highly dependent on the external components
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© 2007 National Semiconductor Corporation
Frequency and Duty Cycle Limits
Rise and fall times where IF is between 0 and 100% cause further error
TttD SUD
MIN+
= TtT
D SDMAX
−=
PWMfT 1=
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© 2007 National Semiconductor Corporation
A Tale of Two Circuits
• LM3489 is an LM3485 derivative
• Adds a logic enable• Not designed for LED
but:– Fast, pure hysteretic
control– Simple design– Needs output cap– VIN = 7.2V
• LM3404 is an LM5007 derivative
• DIM pin is really a fast enable pin
• Designed for LED– COT is almost as fast as
hysteretic– Fixed on-time simplifies
inductor selection– No output cap– VIN = 24V
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© 2007 National Semiconductor Corporation
LM3404 Eval Board
Drives a 1W white (InGaN) LED at 1A from 24V
GNDDIM
BOOT SW
CS
RON
LM3404/04HV
VIN
D1
L1CB
RSNS
CF
RONCIN
VIN = 6V to 42V (LM3404)VIN = 6V to 75V (LM3404HV)
VCC
OFF
DIM1
LEDANODE
LEDCATHODE
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© 2007 National Semiconductor Corporation
LM3489 LED Drive Conversion
EN
FB
GND
ADJ
PGND
PGATE
VINISENSE
LM3489
CO
D1
Q1CIN
RSNS2
RCL CCL
L1
VIN = 6.0V to 8.4V
+-
VIN
CFF
R350
Ri
LM321
U2
U1
RFF
CF
To LED Anode
To LED Cathode
PWM DIM SIGNAL
RSNS1
Drives one white LED at 350 mA from 7.2V
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© 2007 National Semiconductor Corporation
LM3404 Delay, tD
tD = 51 ns
Bandgap, analog functions were already powered
DIM
IF
SW
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© 2007 National Semiconductor Corporation
LM3489 Delay, tD
tD = 16 µs
Low power shutdown: lots of circuits had to ‘wake up’
Note the overshoot, due to the limited bandwidth of the LM321 used to amplify Vsnsfor the LM3489. If this circuit did not have the amplifier or an output capacitor there would be no overshoot at all.DIM
IF
SW
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© 2007 National Semiconductor Corporation
LM3404 Slew Up, tSU
tSU = 3 µs
∆iL = ∆iF (no CO)
∆iL = (VIN – VO) / L
Limited by tOFF-MIN
tOFF-MIN = 300 ns
DIM
IF
SW
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© 2007 National Semiconductor Corporation
LM3489 Slew Up, tSU
tSU = 2 µs
Shaped and limited by CO charging
ΔiL = (VIN – VO) / L
DIM
IF
SW
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© 2007 National Semiconductor Corporation
LM3404 Slew Down, tSD
∆iL = – VO / L
tSD = 8.4 µs
DIM
IF
SW
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© 2007 National Semiconductor Corporation
LM3489 Slew Down, tSD
Shaped and limited by CO discharging
ΔiL = – VO / L
tSD ≈ 8 µs
DIM
IF
SW
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© 2007 National Semiconductor Corporation
Compare the Contrast Ratios
• LM3489• tD + tSU = 18 µs• DMIN = 18 / 2000 = 0.009• CR = 1 / DMIN = 111 : 1
• LM3404• tD + tSU = 3.05 µs• DMIN = 3.05 / 2000
= 0.001525• CR = 1 / DMIN = 655 : 1
fDIM = 500 Hz, TDIM = 2 ms
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© 2007 National Semiconductor Corporation
Frequency and CR Trade-off
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© 2007 National Semiconductor Corporation
Low Frequency ( < 1 kHz)
• General and automotive applications
• More efficient: less transitions
• Duty cycle requirements not as strict: 10% to 90% is typical
• Usually achievable by using the DIM or EN pins
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© 2007 National Semiconductor Corporation
High Frequency ( > 10 kHz)
• Technical requirements force the users to high frequency
• Generation of white light from RGB in backlights, video projectors
• Loss of efficiency due to the transitions
• Usually requires a parallel dimming FET
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© 2007 National Semiconductor Corporation
Parallel FET Dimming
Continuous inductor current
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© 2007 National Semiconductor Corporation
Parallel FET Results
FET
GATE
IF
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© 2007 National Semiconductor Corporation
Parallel FET Results
FET
IF
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New LED Driving Tools
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© 2007 National Semiconductor Corporation
WEBENCH On Line Design Environment for LED Drivers
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© 2007 National Semiconductor Corporation
WEBENCH On Line Design Environment for LED Drivers
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