LFoundry Corporate presentation 2015 - Dekra audit

© 2015 LFoundry. All rights reserved. confidential

Fabrizio Famà Senior VP

HR & Corporate Affairs

[email protected]

LFoundry:

Company overview


LFoundry at a glance

LFoundry S.r.L. is an Italian-based entity, headquartered at Avezzano (AQ), Italy

Business Model Silicon foundry (it means that we own technologies and not products)

We provide direct access to the development on silicon by using LF PdKs

We provide direct access to our manufacturing capability, provided that the technology of the customer fits with our tool-set

We do evaluate opportunities for joint developments

Some 1550 employees: Most of them at Avezzano site: process development, manufacturing and engineering, facilities, staff functions

Some 30 employees at Landshut (Bavaria – Germany): business development, PdK and Design

Some representatives in US (Orange County – California) and Japan (Tokyo)

Few Financial figures

2

(K€) FY2013 (11 months)

FY2014 FY2015 (f)

Net revenue 151,250 189,785 215,000

Gross Margin % 17 23 18

Net Profit (Loss) 9,443 7,810 3,700

Capital Investments

for equipment

4,714 11,705 10,000


COMPANY’S MISSION

Our mission is to be your reliable, agile and trusted business

partner. We provide the highest value for your More than

Moore specialized foundry needs thanks to our innovative

technology, our secure environment and the unique ability to

find the right solutions for you.

3


The manufacturing site

Located in Avezzano (L’Aquila), Italy

Max capacity 10000 wf/week (32PML equivalent)

More than 700 tools installed

More than 900 gases and chemicals

Employees: some 1515

2a private employer in Regione Abruzzo

Power plant: 9 engines 3 MWe each. The heat is recovered

to produce hot water and saturated vapor.

4

Company Milestone Business

2014 LFoundry Avezzano become LFoundry

headquarter

Foundry

2013 LFoundry Leveraged buy out: JV between

LFoundry Europe (50%) and Marsica

Innovation Spa (50%) (local

management)

Foundry

2008 Micron Aptina Imaging created as spin-off of

Micron 's Image Sensor Division

Imager

2005 Micron Image sensor line installation DRAM &

Imager

2001 Micron completed 8 inch conversion DRAM

1998 Micron acquired by Micron Technology DRAM

1994 T.I. 8 inch mini line installed DRAM

1989 T.I. Site founded, 6 inch, DRAM


VALUE PROPOSITION

5

Reliable and agile manufacturing and development partner

Innovative Technology and

Competitive PDK offer

Ability to satisfy requirements for

challenging market segment

IDM-ORIGINATED QUALITY CULTURE FLEXIBILITY AND SPEED

EFFICIENT 200mm MANUFACTURING DEEP INNOVATION ROOTS


SUPPORTING OUR VALUE PROPOSITION

6

~ 90 device/ integration engineers dedicated

to technology development and to PLM

~ 110 process and equip

~ 165 maintenance

technicians

AIAG APQP compliant NPI

process

State of the art 200mm

process control systems

and tools automation

ERP to manage customer orders and supply

chain

Advanced production scheduler

to offer competitive Cycle Time

ISO TS 16949, ISO14001, OHSAS18001

certified QEHS mgnt systems

~70 nm capable tool set (90 nm volume)

High end pure play foundry technology for

AMS (0.15mm and 0.11mm PDK)

Experience in fast customer

technology transfer and joint

technology development

~ 55 engineers to manage

quality , supply chain and

customer processes

Full iPKD supporting Cadence, Mentor,

Tanner , Keysight and Synopsys Security mngt system to enable common

criteria ISO 15408 certification

Automotive Graded

Structured continuous

improvement process

FMEA – control plan – 8D

~ 10 IP dev partner/supplier


Technology diversification

7

Applications:

Smartcards

SIM

ID

Applications:

Automotive cam

Industrial, medical,

special image sensors

Applications:

LCD Driver

Integrated Display

Controller (TDDI)

Applications:

Gas sensor

Pressure sensor

Applications:

PMIC / PMU

Motor / LED Driver

Discrete

RF/Audio

Internet

Of

Things

Security

Energy

Efficiency

• Smart Power

• Secure Microcontrollers , Smartcards

• Imaging

• Integrated Touch Display Controller

• Sensors (C-MEMS)


Diversification roadmap

8

MULTI PRODUCT & DIVSERIFIED

CLIENT BASE

CONCENTRATED PORTFOLIO OF

CLIENTS AND PRODUCTS

On Semi99.60%

Other0.40%

On Semi66%

Smartcard12%

Other customer technology10%

LF15A2%

Smartpower4%

Citizen Finetech Miyota6%

1H-14 ACTUAL FY-16 PROJECTION

customer

technology CIS-

related

customer

technology CIS-

related

customer

technology path

finder related


DEDICATED CIS TECHNOLOGY …

AND BEYOND

9


Dedicated CIS Technology

180nm/150nm Tech node

Al BEOL

130nm/110nm Tech node

Al BEOL

90nm Tech node

Cu BEOL

10

2005-2015 NODE ADVANCEMENT


LF 150nm TECHNOLOGY PLATFORM

“LF15A” PDK

Modular Process Design Kit

High performance 150nm analog,

mixed-signal process for a wide field of

different applications from low power to

high speed RF.

Optimization by different modules:

MIM capacitor

LDMOS (8V, 40V, 60V)

LDMOS2 for very high voltage (80V up to

700V) under development

OTP memory

11

Step Process Isolation STI with mini LOCOS

Channel Retrograde Implants with HE

Gate Oxides

2.8nm for 1.8V

7.0nm for 3.3V

16nm for 5.0V

Gate Salicided polysilicon (150nm)

Spacer Oxide

Salicide CoSi2 with salicide block

Contact&vias Tungsten

Metals Up to 7 Aluminum with Inductors

Passivation Polymide



Design Kit Specification:

o Full Analog PDK for Cadence Virtuoso 6.1.x

o Full Analog iPDK for the IPL-Alliance

o Digital standard cells library (>400 cells for low

power and high performance applications)

prepared for Cadence and Synopsys

o Gate-Density 137* kGates/mm²

o Variety of memory options: SRAM, OTP, MTP

o Constantly increasing IP Portfolio: µController,

ADC, LDO, POR, OTA, Bandgap, Charge

Pump, Interface buses, …

Technology:

o 150nm modular 1.8V CMOS process

Main Design Rules (nm):

o Gate length: 150nm

o Contact/Via: 180/240nm

o Metal pitch: 480nm

Main Devices:

o NMOS/PMOS (1.8V low leakage, 1.8V high

speed, 3.3V, 5V)

o Poly-, Metal- and Diffusion Resistors

o MIM Capacitors (1fF, 2fF under development)

o Diodes

o NPN-Bipolar transistor, PNP with C on

ground (within the standard CMOS Process)

o RF-Devices like Transistors, Resistors,

Capacitors, Inductors and Varactor

o GPIO library 3.3V, 1.8V and 5V

•12

LF15A 150nm

Process for complex

AMS products

Memory

SRAM (Flash)

OTP / MTP

Digital Library

low leak high speed high quality

RF

inductors varactors

up to 10GHz

Opto

Photosensors Filters imager

high Voltage

LDMOS power metal

high Quality

Automotive Radiation hardness

High Temp.

150°C (amb.) (175°C)

MEMS

RF switch sensors



“LF11A” PDK

Compared to the 150nm technology the

110nm focus is in the low leak and

high density area for analog, mixed-

signal products with higher digital rate.

Higher speed and lower power

consumption are the main effects out of

the 1.2V core, produced with the well

known process quality.

13

Step Process Isolation STI with mini LOCOS

Channel Retrograde Implants with HE

Gate Oxides

2.2nm for 1.2V

3.3nm for 1.8V

19nm for 5.0V

Gate Salicided polysilicon (110nm)

Spacer L-Spacer Oxide-Nitride


Contact&vias Tungsten

Metals 5 Aluminum Layers


LF 110nm TECHNOLOGY PLATFORM(S)

14

Step LF11A LF11IS LF11D LF11C

Isolation STI [Design Rules: 0.13um/0.13um L/S array (0.15um/0.15um L/S pery)]

Channel Retrograde channel doping by high energy implants

Gate Oxides

2.2nm for 1.2V 2.2nm for 1.2V 2.0nm for 1.2V 2.0nm for 1.2V

3.3nm for 1.8V 7.0 for 3.3V 15.5nm for 6V 7.0 for 3.3V

19nm for 5.0V 82nm for 32V

Gate Type Salicided polysilicon [Design Rules: 110nm/150nm L/S]

Poly layer 3 1 2 1 (plus additional poly for

ESF1)

Spacer Oxide L-shaped


Contact Tungsten [DR: 140nm]

Vias Tungsten [DR: 150nm Via1; 190nm ViaX] Cu (Via1,2), W (Via3,4) Cu (Via1,2), W (Via3, X)

Metals 5 Aluminum with MIM 4 Aluminum with MIM 5 (3 Copper and 2

Aluminum ) with MIM

Y (3 Copper and Z

Aluminum ) with MIM

Passivation Oxide/Nitride

Litho 5 Levels with 193nm

ArF 4 Levels with 193nm ArF

Special

Modules ESF3 Flash cell CIS, BSI ESF1 Flash cell Options: ESF1, CIS, HV, RF

Application Smart Card/SIM Image Sensors DDI/TDDI Multi Purpose


And …

More customer technologies

m-display w/ Citizen Finedevice (http://cfd.citizen.co.jp)

X-Ray PD sensor (Eu company)

3D TOF sensor (Eu company)

SiPM (Eu company)

Power Device (US company)

Finger Print Detector (Eu company)

Others …

EU Funded Programs

Lassie-FP7 (Large Area Solid State Intelligent Efficient luminaires http://lassie-fp7.eu/)

Supertwin (All Solid-State Super-Twinning Photon Microscope)

NanoStreeM (NANOmaterials: STRategies for Safety Assessments in advanced Integrated

Circuits Manufacturing)

Space-related Collaborations

Sitael, RedCat, IMT, Thales-Alenia Space, Università di Padova, LFoundry: Evaluation of

LFoundry Mixed-Signal 150nm CMOS Process (LF15A) for Space Applications

LFoundry is the foundry for the European Low Flux CMOS Image Sensor Development

(Caeleste as prime)

LFoundry and IMEC are looking to jointly enable a Euro Space Imager Foundry Ecosystem

15

http://cfd.citizen.co.jp/

http://lassie-fp7.eu/




ABOUT ENABLING FAST CUSTOMER

TECHNOLOGY TRANSFER …

16


Traditional Technology Upgrades

17

Newly Introduced Technologies

SOD solution for the STI module (Tel coater + furnace for the anneal);

High oxide selective clean technology for metal APM and contact pre-clean;

PVD WSix (Amat Endura);

High K dielectric ALD applications (HfOx and AlOx in Tel a8 furnace)

High K reactice sputter applications (HfOx, TaOx and TiOx in Amat Endura)

PVD TiAl for BEOL metallization (Amat Endura)

We have reintroduced following technologies

Selective EPI growth application (Amat Centura );

mmTi/W/WN stack for WL and BL (Amat Endura);


Specialty Technology Upgrades

18

Front side solderable pad

Metal Evaporator

Lift-off application

Back side thinning/metallization

Taper/De-Taper

Wafer Thinning – grinder (Full wafer and Taiko)

Stress relief (Spin Etch Application)

Metal Evaporator

More for Back side Processing

Temporary bonder / debonder

Litho Stitching to enable large area optical sensors

Wafer Stacking to enable individual optimization of sensor & readout

circuitry processes

© 2015 LFoundry. All rights reserved. confidential 19

THANKS FOR YOUR ATTENTION

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LFoundry Corporate presentation 2015 - Dekra audit

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