Note: 1% metal film resistors, 5% polypropylene capacitors
47 k:
3320:150:
909:
26.1 k:
3.83 k:
100:
150:
22 nF//4.7 nF//500 pF
3320:
47 nF//33 nF
LME49860
10 pF
LME49860, LME49860MABD, LME49860NABD
www.ti.com SNAS389C –JUNE 2007–REVISED APRIL 2013
LME49860 44V Dual High Performance, High Fidelity Audio Operational AmplifierCheck for Samples: LME49860, LME49860MABD, LME49860NABD
1FEATURES KEY SPECIFICATIONS2• Easily Drives 600Ω Loads • Power Supply Voltage Range: ±2.5 to ±22V• Optimized for Superior Audio Signal Fidelity • THD+N (AV = 1, VOUT = 3VRMS, fIN = 1kHz)• Output Short Circuit Protection – RL = 2kΩ: 0.00003% (Typ)• PSRR and CMRR Exceed 120dB (Typ) – RL = 600Ω: 0.00003% (Typ)• SOIC or PDIP Packages • Input Noise Density: 2.7 nV/√Hz (Typ)
• Slew Rate: ±20V/μs (Typ)APPLICATIONS • Gain Bandwidth Product: 55MHz (Typ)• Ultra High Quality Audio Amplification • Open Loop Gain (RL = 600Ω): 140dB (Typ)• High Fidelity Preamplifiers • Input Bias Current: 10nA (Typ)• High Fidelity Multimedia • Input Offset Voltage: 0.1mV (Typ)• State of the Art Phono Pre Amps • DC Gain Linearity Error: 0.000009%• High Performance Professional Audio
DESCRIPTION• High Fidelity Equalization and CrossoverThe LME49860 is part of the ultra-low distortion, lowNetworksnoise, high slew rate operational amplifier series• High Performance Line Driversoptimized and fully specified for high performance,
• High Performance Line Receivers high fidelity applications. Combining advanced• High Fidelity Active Filters leading-edge process technology with state-of-the-art
circuit design, the LME49860 audio operationalamplifiers deliver superior audio signal amplificationfor outstanding audio performance. The LME49860combines extremely low voltage noise density(2.7nV/√Hz) with vanishingly low THD+N (0.00003%)to easily satisfy the most demanding audioapplications.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications ofTexas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
2All trademarks are the property of their respective owners.
DESCRIPTION (CONTINUED)To ensure that the most challenging loads are driven without compromise, the LME49860 has a high slew rate of±20V/μs and an output current capability of ±26mA. Further, dynamic range is maximized by an output stage thatdrives 2kΩ loads to within 1V of either power supply voltage and to within 1.4V when driving 600Ω loads.
The LME49860's outstanding CMRR (120dB), PSRR (120dB), and VOS (0.1mV) give the amplifier excellentoperational amplifier DC performance.
The LME49860 has a wide supply range of ±2.5V to ±22V. Over this supply range the LME49860 maintainsexcellent common-mode rejection, power supply rejection, and low input bias current. The LME49860 is unitygain stable. This Audio Operational Amplifier achieves outstanding AC performance while driving complex loadswith values as high as 100pF.
The LME49860 is available in 8-lead narrow body SOIC and 8-lead PDIP packages. Demonstration boards areavailable for each package.
Connection Diagrams
Figure 2. 8-Pin SOIC or PDIPSee D or P Package
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foamduring storage or handling to prevent electrostatic damage to the MOS gates.
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.(2) Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured
specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed.Some performance characteristics may degrade when the device is not operated under the listed test conditions.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instrument Sales Office/ Distributors for availability andspecifications.
(4) Amplifier output connected to GND, any number of amplifiers within a package.(5) Human body model, 100pF discharged through a 1.5kΩ resistor.(6) Machine Model ESD test is covered by specification EIAJ IC-121-1981. A 200pF cap is charged to the specified voltage and then
discharged directly into the IC with no external series resistor (resistance of discharge path must be under 50Ω).
OPERATING RATINGSTemperature Range TMIN ≤ TA ≤ TMAX −40°C ≤ TA ≤ 85°C
Supply Voltage Range ±2.5V ≤ VS ≤ ±22V
ELECTRICAL CHARACTERISTICS FOR THE LME49860 (1)
The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwisespecified.
VOUT = 1VP-P, –3dBFPBW Full Power Bandwidth 10 MHzreferenced to output magnitude at f = 1kHz
ts Settling time AV = –1, 10V step, CL = 100pF, 0.1% error range 1.2 μs
μVRMSEquivalent Input Noise Voltage fBW = 20Hz to 20kHz 0.34 0.65 (max)en
f = 1kHz 2.7 4.7 nV/√HEquivalent Input Noise Density f = 10Hz 6.4 z (max)
in f = 1kHz 1.6 pA/√HCurrent Noise Density f = 10Hz 3.1 z
VS = ±18V ±0.12 ±0.7 mV(max)
VOS Offset VoltageVS = ±22V ±0.14 ±0.7 mV
(max)
ΔVOS/ΔTe Average Input Offset Voltage –40°C ≤ TA ≤ 85°C 0.2 μV/°Cmp Drift vs Temperature
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.(2) Typical specifications are specified at +25ºC and represent the most likely parametric norm.(3) Tested limits are ensured to AOQL (Average Outgoing Quality Level).
ELECTRICAL CHARACTERISTICS FOR THE LME49860(1) (continued)The following specifications apply for VS = ±18V and ±22V, RL = 2kΩ, RSOURCE = 10Ω, fIN = 1kHz, TA = 25°C, unless otherwisespecified.
The vanishingly low residual distortion produced by LME49860 is below the capabilities of all commerciallyavailable equipment. This makes distortion measurements just slightly more difficult than simply connecting adistortion meter to the amplifier’s inputs and outputs. The solution, however, is quite simple: an additionalresistor. Adding this resistor extends the resolution of the distortion measurement equipment.
The LME49860’s low residual distortion is an input referred internal error. As shown in Figure 109, adding the10Ω resistor connected between the amplifier’s inverting and non-inverting inputs changes the amplifier’s noisegain. The result is that the error signal (distortion) is amplified by a factor of 101. Although the amplifier’s closed-loop gain is unaltered, the feedback available to correct distortion errors is reduced by 101, which means thatmeasurement resolution increases by 101. To ensure minimum effects on distortion measurements, keep thevalue of R1 low as shown in Figure 109.
This technique is verified by duplicating the measurements with high closed loop gain and/or making themeasurements at high frequencies. Doing so produces distortion components that are within the measurementequipment’s capabilities. This datasheet’s THD+N and IMD values were generated using the above describedcircuit connected to an Audio Precision System Two Cascade.
Figure 109. THD+N and IMD Distortion Test Circuit
The LME49860 is a high speed op amp with excellent phase margin and stability. Capacitive loads up to 100pFwill cause little change in the phase characteristics of the amplifiers and are therefore allowable.
Capacitive loads greater than 100pF must be isolated from the output. The most straightforward way to do this isto put a resistor in series with the output. This resistor will also prevent excess power dissipation if the output isaccidentally shorted.
LME49860MAX/NOPB ACTIVE SOIC D 8 2500 Green (RoHS& no Sb/Br)
CU SN Level-1-260C-UNLIM -40 to 85 L49860MA
(1) The marketing status values are defined as follows:ACTIVE: Product device recommended for new designs.LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.PREVIEW: Device has been announced but is not in production. Samples may or may not be available.OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availabilityinformation and additional product content details.TBD: The Pb-Free/Green conversion plan has not been defined.Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement thatlead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used betweenthe die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weightin homogeneous material)
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
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