Low Voltage Power MOSFET

Technical Marketing

Power Transistor Division

IMS Sector

March-2012

Technology Roadmap

10/03/2012

MOSFET Technology Roadmap

4

10/03/2012 Presentation Title

2013 2012

STripFET V “H5”

STripFET DeepGATE “H6”

STripFET DeepGATE “H7”

Eng. samples Maturity

2014

STripFET DeepGATE “H8”

Q3

Q2

Q4

Q4

MOSFET Technology Roadmap

5

“H5

”

“H6”

“H7”

Parameters STripFET V

“H5” series

STripFET VI

DeepGATE

“H6” series

STripFET VII

DeepGATE

“H7” series

RDS(on)*Adie @10V

[mW x mm2] 1 D = - 25% D = - 60%

RDS(on)*Adie @4.5V

[mW x mm2] 1 D = - 5% D = - 50%

FoM= RDS(on)*Qg @4.5V

[mW x nC] 1 D = +25% D = - 50%

MOSFET Technology Roadmap

6

STripFET III “F3”

2013 2012

Eng. samples Maturity

Q1 Q2

STripFET V “F5” 40V

STripFET DeepGATE “F4” series 55÷150V

STripFET VI DeepGATE “F6” series 40÷80V

STripFET VII DeepGATE “F7” series 55÷200V

2011

7

• High avalanche ruggedness

• Improved RDSon x Area vs.

STripFET III

• Technology available in

TO220, H2PAK and

PowerFLAT 5x6

Key features

• Higher efficiency

• Robust design

• Small form factor of final

system

Benefict

Technology

STripFET VI DeepGATE vs prev. generations

21%

40V PowerFLAT 5x6

Rd

so

n[m

Ω] 13%

60V H2PAK-2

Rd

so

n[m

Ω]

Trenh Planar

Qrr[nc] 21.6 74.3

Trr[ns] 30 48

Irm[A] 1.1 2.56

70%

STripFET VII DeepGATE “F6” series

STripFET VII DeepGATE “F7” series

8

Technology

• Higher efficiency

• Robust design

• Small form factor of final

system

• Industry’s lowest RDS(on)

• Improved RDSon x Area

vs. STripFET III

Key Features

Benefict

• Power Supply

• Telecom

• Motor control

• Solar

• Automotive

Application

100V F7 vs Best competition

10%

RD

So

n[m

ax]@

10

V]

P-Channel, Technology Roadmap

10

2012

STripFET VI DeepGATE

STripFET VI DeepGATE

Body

Gate

Epy Source

Metal

STripFET VII DeepGATE

Eng. samples Maturity

2014 2013

Q2 Q3

Q3 Q1

Q3 Q1

SMD package overview 13

PowerFLATTM 3.3x3.3

PowerFLATTM 5x6

PowerFLATTM 5X6 d.i.

Up to 5.5W Up to 4W Up to 3W

> 1

mm

<

1 m

m

SOT23-3L

SOT23-6L

TSSOP-8

SO-8

SOT223

PowerFLATTM 5X6 a. d.i.

PowerFLAT 5x6

Dual cool

PowerFLATTM 2x2

PowerFLATTM 5x6 cd

MOSFET Technology Roadmap

14

Up to 300A Up to 160A Up to 100A

RIB

BO

N

Wir

es

H2PAK

PowerSO-10TM

DPAK

DPAK

D2PAK

H2PAK-6 H2PAK-7

PowerSO-10TM

H2PAK, high current package

15

Key features

• Packages suitable to drive very High Currents (>120

Amps)

• Customer wide options choice

• H2PAK will improve RDSon Vs standard one

Applications

• Motor Control

• SMPS: Synchronous Rectification, OR-ing

G

All Pins uncut

STHxxxNyzz-7

S G

Pin 4 cut

STHxxxNyzz-6

S G

Pin 2 cut

STHxxxNyzz-62

G

S S

D

Full compatible with D2PAK

STHxxxNyzz-2

H2PAK With Ribbon H2PAK With Wire

Assembly

• Ribbon Bonding will give a competitive advantage

H2PAK-6 H2PAK-7 H2PAK-62 H2PAK-2

Key features Assembly

Applications

H2PAK, pin configurations

High current evolution

16

120 A 160 A 180 A 220 A

RDson TYP @ 25°C 2.1 mΩ 1.6 mΩ 1.4 mΩ 1.25 mΩ

RDson MAX @25°C 2.6 mΩ 2.0 mΩ 1.7 mΩ 1.5 mΩ

IDcont @ 100°C 120 A 160 A 180 A 220 A

Drain Current Continuous

D2PAK H2PAK POWERSO-10

Wire Bonding Ribbon Bonding

TO220

PowerFLAT, leadless package

17

• Low thickness/weight

• Low Rthj-pcb thermal resistance

• Low parasitic inductance

• Low parasitic package resistance

• Multiple sources

• Small form factor

• High power capability

• Less parasitic losses

• High switching frequency operation

• High current handling

• Top side heat dissipation

PowerFLAT 3.3x3.3 PowerFLAT 5x6 d.s.c PowerFLAT 5x6 d.i.

asymmetric

PowerFLAT 2x2 PowerFLAT 5x6

symmetric

Common drain

Key features Key features

Key features

PowerFLAT Versus DPAK

18

The smart solution to reduce space

150 mm2 63.2 mm2 30 mm2

2.3

mm

1m

m

4.5

mm

D2PAK DPAK PowerFLAT 5x6

Four times thiner than D²PAK

Twice thinner than DPAK

Surface on PCB is

80% smaller than D²PAK

60% smaller than DPAK

Features Gold wires 6x2 mils

Ribbon 2x30x4 mils

Clip

RDS(on) @4.5V [mΩ] 8.5 6.7

(-20%)

~5.7

(-33%)

RDS(on) @10V [mΩ] 6.7 4.6

(-30%)

~3.7

(-44%)

RDS(on) @4.5V [mΩ] 8.5 6.7

(-20%)

~5.7

(-33%)

RDS(on) @10V [mΩ] 6.7 4.6

(-30%)

~3.7

(-44%)

Different assembly process capability

19

SO-8/PowerFLAT bonding impact on RDS(on)

This comparison is made on same die size

PowerFLAT P [W] Tj-c [ºC]

Single side cooling

1

53

Dual Side cooling 28

Dual side cool packages

20

• Exposed metal source on top side

• Package outline comparable with SO-8 &

PowerFLAT5x6

• Low profile (0.8mm min)

• Full encapsulated silicon

• Low operating temperature and longer operating life

• Exceptional die protection and easy handling &

manufacturability

• Higher current handling capability than standard

packages with same size

• Enabled higher power density

• Low total system silicon cost

• Multiple sources

Package Botton Package Top Section

Features Benefict

Thermal performances

Section Package botton Package top

- 47%

ST’s products solution

10/03/2012

Product portofolio

Part Number BVDS

[V]

RDS(on)

(max) [mΩ]

Qg(typ)

[nC] Status Package

STP180N10F3 100 5.1 114 Prod

TO220 STP130N10F3 100 9.6 50 Avail

STH180N10F3-2 100 4.5 114 Prod

STF180N10F3 100 5.1 114 Pord TO220FP

STH180N10F3-2 100 4.5 114 Prod H2PAK-2

STL70N10F3 100 7.8 50 Q4/11 PowerFLAT

5x6 STL30N10LF3 100 35 15 Q1/12

STripFET VI DeepGATE “F3”series 22

• High avalanche

ruggedness

• Improved

RDSon x Area

vs. F3

Features

• Powes supply

• Telecom

• Adapter

• Solar

Application Performance

STripFET VI DeepGATE “F4”series 23

Product portofolio

Part Number BVDS

[V]

RDS(on)

(max) [mΩ]

Qg(typ)

[nC] Status Package

STP90N55F4 55 8 90 Prod

TO220

STP80N70F4 68 9.8 76 Prod

STP78N75F4 75 11 90 Prod

STP165N10F4 100 5.5 180 MAT29

STP70N10F4 100 16.5 60 Prod

STP90N15F4 150 16 175 MAT10

STH165N10F4-2 100 5.1 180 MAT10 H2PAK-2

STH90N15F4-2 150 17 130 MAT20

STL25N15F4 150 63 48 Prod PowerFLAT

5x6

• High current

capability

Features

• Motor control

• E-bike

• Ups

• Industrial

Application

STripFET VI DeepGATE “F6”series 24

Product portofolio

Part Number BVDS

[V]

RDS(on)

(max) [mΩ]

Qg(typ)

[nC] Status Package

STP110N55F6 55 5.2 120 Availble S

TO220

STP260N6F6 60 3 150 Prod

STP77N6F6 60 7.9 66 By April S

STPxxN7F6 68 8 98 By May S

STP210N75F6 75 3.8 140 Prod

STH320N4F6-2 40 1.25 190 Q3/12 MP

H2PAK-2 STH260N6F6-2 60 2 150 Prod

STH210N75F6-2 75 2.8 140 Prod

STL180N4LF6 40 2.1 63 Q1/12 S

PowerFLAT

5x6

STL100N6LF6 60 4.5 130 Q1/12 MP

STL80N75F6 75 5.5 100 Q1/12 MP

STL75N8LF6 80 7.4 135 Prod

• High avalanche

ruggedness

• Improved

RDSon x Area

vs. F3

Features

• Powes supply

• Telecom

• Adapter

• Solar

Application

MOSFET Logic Level 25

Product portofolio

Part Number BVDS

[V] RDS(on) (max) [mΩ]

Qg(typ)

[nC] Package

@10V @4.5V @3.3V @2.5V @10V

STL100N1VH5 12 3 4 26

PowerFLAT

5x6

STL120N2VH5 20 3 4

STL7N6VF3 60 70

STL40N75LF3 75 19 21 11

STL30N10LF3 100 35 50 15

STL16N1VH5 12 3 4 26 PowerFLAT

3.3*3.3

• 4.5 mcu output

voltage

• Electric

vehicles

• Hybrid vehicle

Application

• low power

• fast switching

• low leakage

current

Benefict

PowerFLAT 5x6 Product portfolio 26

• VI Dee

• STripFET V

• STripFET

DeepGATE

• STripFET VII

DeepGATE

Features

• Industrial

• Server

• Telecom

• Computer

Application

Product portofolio

PN BVDSS

[V]

RDS(on) (max)

[mOhm]

Qg

(typ)

[nC]

Ciss

[pF] Status

10V 4.5V

STL51N3LLH5 30 14.5 17.5 5 724 Prod.

STL56N3LLH5 30 9 11.2 6.5 950 Prod.

STL60N3LLH5 30 7.1 9.5 8 1290 Prod.

STLxxN3LLH7 30 6 8 6 TBD Q3 ’12

STL65N3LLH5 30 5.8 7.5 12 1500 Prod.

STL80N3LLH6 30 5.2 7.6 17 1700 Prod.

STL90N3LLH6 30 4.5 7.3 17 1700 Prod.

STL100N3LLH7 30 3 4.5 14 1700 Q3’12

STL150N3LLH6 30 2 3.4 40 4040 Prod.

STLxxN3LLH7 30 2 3.5 18 1950 Q3 ’12

STL150N3LLH5 30 1.75 2.4 40 5800 Prod.

PowerFLAT 5x6 Product portfolio 27

• VI Dee

• STripFET V

• STripFET

DeepGATE

• STripFET VII

DeepGATE

Features

• Industrial

• Server

• Telecom

• Computer

Application

Product portofolio

PN BVDSS

[V] RDS(on) (max) [mOhm]

Qg (typ)

[nC]

Ciss

[pF] Status

10V 4.5V 2.5V

STL100N1VH5 12 3 4 24 5x6 Prod

STL16N1VH5 12 3 4 24 3.3x3.3

Prod

STL15N4LLF5 40 6.7 9 12.9 MC30

STL7N6F3 60 21 13.6 MC30

STL70N4LLF5 40 6.7 9 12.9

5x6

Prod.

STL140N4LLF5 40 2.7 3.1 45 Prod.

STL180N4LF6 40 2.1 3.4 63 Q1

Sampes

STL35N6F3 60 21 13.6 Prod.

STL100N6LF6 60 4.5 7.2 100 Q1 Prod

STL85N6F3 60 5.7 50 Prod.

STL80N75F6 75 5.5 100 Q1 Prod

STL75N8LF6 80 7.4 11.4 125 Prod

STL70N10F3 100 8.4 50 Q1

Prod

75V LV MOSFET for LED driving 35

• Main switch for Boost converter with 10~20W LED

Key features

LED lighting with DC input, output driving 6~10 LED in

series

• Low power, 10~20W

• Boost topology

• 600kHz switching frequency

• Counter lighting in department store etc.

Key Application Features

• Philips, GE & FSP-Powerland

Customers

Low Voltage MOSFET

• BVdss 75V

• Rdson <19mOhm@10V

• Qg =19nC

• Package: PowerFLAT 5x6

Key parameters

38

Low Voltage Technical Marketing

Power Transistor Division , IMS Group