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Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V

Gate-Source Voltage VGSS ±20 V

Continuous Drain Current (1)

TC=25oC

ID

66.3

A TC=70oC 53.0

TA=25oC 22.8(3)

TA=70oC 18.2(3)

Pulsed Drain Current IDM 100 A

Power Dissipation

TC=25oC

PD

46.2

W TC=70oC 29.6

TA=25oC 5.5(3)

TA=70oC 3.5(3)

Single Pulse Avalanche Energy (2) EAS 79.0 mJ

Junction and Storage Temperature Range TJ, Tstg -55~150 oC

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (1) RθJA 22.7 oC/W

Thermal Resistance, Junction-to-Case RθJC 2.7

MDU1514 Single N-channel Trench MOSFET 30V, 66.3A, 6.0mΩ

Features

VDS = 30V ID = 66.3A @VGS = 10V RDS(ON)

< 6.0 mΩ @VGS = 10V < 9.0 mΩ @VGS = 4.5V

100% UIL Tested 100% Rg Tested

General Description The MDU1514 uses advanced Magnachip’s MOSFET

Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDU1514 is suitable device for DC/DC Converter and general purpose applications.

D

G

S

S S S G G S S S

D D D D D D D D

PowerDFN56

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Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

MDU1514URH -55~150oC PowerDFN56 Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics

Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 30 - - V

Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.3 1.9 2.7

Drain Cut-Off Current IDSS VDS = 30V, VGS = 0V - - 1

μA TJ=55oC - - 5

Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1

Drain-Source ON Resistance RDS(ON)

VGS = 10V, ID = 18A - 5.2 6.0

mΩ TJ=125oC - 7.5 8.7

VGS = 4.5V, ID = 14A - 7.5 9.0

Forward Transconductance gfs VDS = 5V, ID = 10A - 33 - S

Dynamic Characteristics

Total Gate Charge Qg(10V)

VDS = 15.0V, ID = 18A, VGS = 10V

14.3 19 23.8

nC Total Gate Charge Qg(4.5V) 6.6 8.8 11.0

Gate-Source Charge Qgs - 3 -

Gate-Drain Charge Qgd - 2.8 -

Input Capacitance Ciss

VDS = 15.0V, VGS = 0V, f = 1.0MHz

913 1217 1521

pF Reverse Transfer Capacitance Crss 89 119 149

Output Capacitance Coss 186 248 310

Turn-On Delay Time td(on)

VGS = 10V, VDS = 15.0V, ID = 18A , RG = 3.0Ω

- 7.9 -

ns Rise Time tr - 11.5 -

Turn-Off Delay Time td(off) - 27.0 -

Fall Time tf - 8.3 -

Gate Resistance Rg f=1 MHz 1.0 2.0 2.8 Ω

Drain-Source Body Diode Characteristics

Source-Drain Diode Forward Voltage VSD IS = 18A, VGS = 0V - 0.8 1.1 V

Body Diode Reverse Recovery Time trr IF = 18A, dl/dt = 100A/μs

- 24.5 36.8 ns

Body Diode Reverse Recovery Charge Qrr - 16.7 25.1 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 22A, VDD = 27V, VGS = 10V.

3. T < 10sec.

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Fig.5 Transfer Characteristics

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

Fig.3 On-Resistance Variation with Temperature

Fig.4 On-Resistance Variation with

Gate to Source Voltage

Fig.6 Body Diode Forward Voltage Variation with Source Current and

Temperature

0.0 0.5 1.0 1.5 2.0 2.5 3.00

10

20

30

40

4.5V

3.5VV

GS = 10V

5.0V

4.0V

3.0V

I D,

Dra

in C

urr

en

t [A

]

VDS

, Drain-Source Voltage [V]

5 10 15 20 250

3

6

9

12

15

VGS

= 10V

VGS

= 4.5V

Dra

in-S

ou

rce

On

-Re

sis

tan

ce

[mΩ

]

ID, Drain Current [A]

-50 -25 0 25 50 75 100 125 1500.6

0.8

1.0

1.2

1.4

1.6

1.8

※ Notes :

1. VGS

= 10 V

2. ID = 16.0 A

RD

S(O

N),

(No

rma

lize

d)

Dra

in-S

ou

rce

On

-Re

sis

tan

ce

TJ, Junction Temperature [

oC]

2 3 4 5 6 7 8 9 100

20

40

60

80

100

※ Notes :

ID = 18.0A

TA = 25

RD

S(O

N) [

mΩ

],

Dra

in-S

ourc

e O

n-R

esis

tance

VGS

, Gate to Source Volatge [V]

0 1 2 3 4 50

4

8

12

16

VGS

, Gate-Source Voltage [V]

TA=25

※ Notes :

VDS

= 5V

I D, D

rain

Cu

rre

nt [A

]

0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

10-1

100

101

TA=25

※ Notes :

VGS

= 0V

I DR,

Re

ve

rse

Dra

in C

urr

en

t [A

]

VSD

, Source-Drain voltage [V]

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Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.

Case Temperature

Fig.11 Transient Thermal Response

Curve

25 50 75 100 125 1500

10

20

30

40

50

60

70

80

I D,

Dra

in C

urr

en

t [A

]

TA, Case Temperature [ ]

10-4

10-3

10-2

10-1

100

101

102

103

10-3

10-2

10-1

100

101

※ Notes :

Duty Factor, D=t1/t

2

PEAK TJ = P

DM * Z

θ JC * R

θ JC(t) + T

C

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

Zθ

JA(t

), T

he

rma

l R

esp

on

se

t1, Rectangular Pulse Duration [sec]

0 5 10 15 20 25 300

300

600

900

1200

1500

Ciss

= Cgs

+ Cgd

(Cds

= shorted)

Coss

= Cds

+ Cgd

Crss

= Cgd

※ Notes ;

1. VGS

= 0 V

2. f = 1 MHzC

rss

Coss

Ciss

Ca

pa

cita

nce

[p

F]

VDS

, Drain-Source Voltage [V]

0 4 8 12 16 200

2

4

6

8

10

VDS

= 15V

※ Note : ID = 18A

VG

S, G

ate

-Sourc

e V

olta

ge [V

]

QG, Total Gate Charge [nC]

10-1

100

101

102

10-1

100

101

102

10 s1s

100 ms

DC

10 ms

Operation in This Area

is Limited by R DS(on)

Single Pulse

TJ=Max rated

TC=25

I D,

Dra

in C

urr

en

t [A

]

VDS

, Drain-Source Voltage [V]

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Package Dimension

PowerDFN56 (5x6mm)

Dimensions are in millimeters, unless otherwise specified

Dimension MILLIMETERS

Min Max

A 0.90 1.10

b 0.33 0.51

C 0.20 0.34

D1 4.50 5.10

D2 - 4.22

E 5.90 6.30

E1 5.50 6.10

E2 - 4.30

e 1.27BSC

H 0.41 0.71

K 0.20 -

L 0.51 0.71

α 0° 12°

Note : Package body size, length and width do not include mold flash, protrusions and gate burrs.

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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller.

Magnachip reserves the right to change the specifications and circuitry without notice at any time. Magnachip does not consider responsibility for use of any circuitry other than circuitry entirely included in a Magnachip product. is a registered trademark of Magnachip Semiconductor Ltd.