Mask Infrastructure Development - SEMATECH€¦ · Mask Infrastructure Development ... PSM...

Kurt R. KimmelMask Strategy Program ManagerDecember 12, 2001

Mask Infrastructure Development

157nm Lithography Data Review

02/04/2002 8:55 AM j:\stndpres\template\IntST.ppt - 2

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1998 / 1999 ITRS

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ISMT Litho 2001 Plan(2-year cycle to 50nm)

ITRS Roadmap w/ Mask Infrastructure

2000/2001 ITRSMask Infrastructure

Available


Mask Infrastructure Summary

CARs seem extendibleResist

Multiple (4) suppliers developingPSM substrates

Unresolved issuePellicle

FEI tool 2H04Repair

Multiple SEM suppliers. AFM development Project at ISMT.

Metrology

KLA-T Terascan 577HR Dec03. Needs pellicle decision.

Inspection

Multiple (6) optionsPattern Generators

Multiple (4) suppliers readyBinary substrates

Pursuing IMS MOPXE proposal participationDatapath

70nm GR / 157nm Litho NodeMask Issue


Data PathRef: ITRS shows projected 324 GB data volume

• Format optimization: SEMI Task Force– Data volume minimization

• Description method• Hiearchy and preservation• Verification

• Data handling– Transfer protocol– Mask order entry– Automated production and engineering control– Logistics

! Much addressed in MOPXE program: Luc DeRidder


Schematic Data-Prep Process FlowCircuit

Design

Mask Layout•Layer extraction•Scaling & Shrinking•RET (OPC, PSM,…)•Fracturing?•Job composition

Mask Making•Tonality, Mirroring•Sizing, PEC•Fracturing/Conversion•Job finishing

INPUT DATA (GDS II)

mask

Job composition and data files are transferred to mask-maker.

What format?

FAB PARAMETERS

Order entry, data prep and handling for inspection, metrology, repair,

and repair verification


Materials (Jerry Cullins)

• Mask-making resist– Multiple CARs extendible to support 70nm node

• Glass blanks– Multiple commercial supplier options

• Binary attenuator– Multiple commercial supplier options

• Attenuated phase shifting substrates– Multiple commercial suppliers developing

100 nm Dense Lines


Pattern Generators

• Resolution: – Main feature: 160 nm– Clear: 140 nm– Opague: 80 nm

• Mean control: 5.5 nm

• Uniformity: nm, 3 sigma – Isolated line: 4.5 nm– Dense lines: 11 nm– Contacts: 12.5 nm

• Image placement: 15 nm, multi-point


Future Pattern Generators

• All 6 major suppliers have plans to develop a 70nm node mask pattern generator.

– Etec / AMAT: raster– Hitachi: vector shaped– JEOL: vector shaped– Leica: vector shaped– Micronic: laser spatial light modulator– Toshiba: vector shaped

• Specifications and timing vary.

• Substantial competition raises confidence of successful intercept with the roadmap.

Long He Project Manager, Lithography

Mask Inspection


Basic Inspection Specifications

• Minimum Inspected Feature: 160 nm

• Minimum OPC Feature:– Clear: 140 nm– Opague: 80 nm

• Sensitivity for transmission defect: 55 nm

• Sensitivity to phase defect: <60 degrees ?


Inspection Supplier Options • Alternate Supplier Investigation Completed:

– Inspection tool suppliers presented their strategies and roadmaps at the private May 9th

2001 International SEMATECH MASC meeting• Etec, an Applied Materials Company • Lasertec• NEC• Toshiba Machine• KLA-Tencor

– Conclusion• Multiple suppliers are developing systems for the 70nm

ground rule mask node.– Issue

• Type of pellicle dramatically impacts inspection optics design.


Mask Inspection: KLA-Tencor DUV• KLA-Tencor Terascan DUV tool current delivery schedule:

– Model 525 D:D 100nm GR Oct. 2002– Model 575 D:DB 100nm GR Jan. 2003– Model 577 HR Beta D:DB 80nm GR Sept. 2003– Model 577 HR Prod D:DB 70nm GR Dec. 2003


Alternating PSM InspectionObjective:Develop the KLA-Tencor 5xx-DUV mask inspection

tool capability to meet the ISMT members 100nm ITRS Node AltPSM mask inspection requirements.

Partner: KLA-TencorApproach:Evolutionary enhancement of the 5XX Terascan-

DUV System Deliverables: AltPSM Deliverables

– Terastar D:D 130nm UV - Q3 2001– Terastar D:DB 130nm UV - Q2 2002– Terascan D:DD 100nm DUV - Q3 2002– Terascan D:DB 100nm DUV - Q1 2003

Extendibility to 70nm ground rule, 157nm shifter depth? TBD…

Marylyn BennettProgram Manager, Lithography

Mask CD Metrology


Basic CD Metrology Specifications

• Minimum Feature: 160nm

• Mean to target: 5.5 nm Accuracy: 1 nm

• Uniformity: 3 sigma Precision: 1-3 nm– Isolated line: 4.5 nm– Dense lines: 11 nm– Contacts: 12.5 nm


Metrology Focus: AFM method and Carbon Nano-Tube (CNT) Development• Method for attachment angle determination

has been developed

• Rapid evaluation method of tip properties

• Optimization of CNT growth reactor & process then cost-effective commercialization

• CNT cross-platform and sample investigation

• FIB milling of Si tips: Several approaches are being tried


Wear Studies

CNT was scanned for 12 hrs across test pattern(speed: 10µm/sec)

This represents ~40 cm scan distance

No apparent lengthchangebefore use after 12 hrs

Test Structure

USF / UCF Sensitive

Klaus EisnerProject Manager, Lithography

157nm AIMS


AIMS 157nm: System Specifications• Mask Types:

– Binary– Attenuated PSM– Alternating PSM

• Mask Size:– 6 “ square – 230 mm square

• Mask Exposure Wavelength: 157 nm • Mask Reduction Factor: 4x or 5x• Numerical Aperture Range: 0.6 to 0.92 • Partial Coherence Range: 0.25 to 1.00• Minimum Detectable Defect Size: 55 nm• Field Illumination Stability: < 5%• Field Illumination Uniformity: < 1.5%


AIMS157nm Key DatesAlpha tool:"MS#2: Requirements defined 02/01"MS#4: Design completed 10/01– MS#5: alpha tool built 02/02

Beta tool:"MS#3: Requirements defined 09/01– MS#6: Design completed 02/02– MS#9: beta tool built 02/03


New Platform for Alpha Tool

MSM193 AIMS fab

Alpha tool will be based on AIMS fab platform- mechanical stability - potential for automation- no platform / software change from αααα−−−− to ββββ−−−−tool

Gil Shelden >>> Richard ClarkLithography Division

Focused-Ion Beam Repair


Basic FIB Mask Repair Specifications• Develop chemistry and process compatible with 157

nm Lithography – Low transmission loss: >95%

• Develop platform with 70nm GR capability– Minimum defect size to repair: 56 nm– Minimum pattern feature size: 160 nm, 320 nm contact – Edge placement accuracy: +/- 7 nm– Substrate damage: 8 nm

• Develop chemistry and processes effective on various 157nm lithography mask materials

– Binary attenuators– Various phase-shifting attenuators– Quartz


Tool Availability

• FEI under contract to ISMT: 2H04 tool

• Seiko Instruments developing a 70nm ground rule tool


Mask Infrastructure Summary

CARs seem extendibleResist

Multiple (4) suppliers developingPSM substrates

Unresolved issue Pellicle

FEI tool 2H04Repair

Multiple SEM suppliers. AFM development Project at ISMT.

Metrology

K-T 577 HR Dec03. Needs pellicle decision.Inspection

Multiple (6) optionsPattern Generators

Multiple (4) suppliers readyBinary substrates

Pursuing IMS MOPXE proposal participationDatapath

70nm GR / 157nm Litho NodeMask Issue

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