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McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Electronics Principles & Applications Principles & Applications Eighth Edition Eighth Edition Chapter 5 Transistors (student version) Charles A. Schuler ©2013 5-1
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Page 1: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

McGraw-Hill

5-1

© 2013 The McGraw-Hill Companies, Inc. All rights reserved.

ElectronicsElectronics

Principles & ApplicationsPrinciples & ApplicationsEighth EditionEighth Edition

Chapter 5Transistors

(student version)

Charles A. Schuler

©2013

5-1

Page 2: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

McGraw-Hill

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• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types• Transistors as Switches

INTRODUCTION

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Dear Student:

This presentation is arranged in segments. Each segmentis preceded by a Concept Preview slide and is followed by aConcept Review slide. When you reach a Concept Reviewslide, you can return to the beginning of that segment byclicking on the Repeat Segment button. This will allow youto view that segment again, if you want to.

Page 4: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Concept Preview• Amplifiers provide gain (the output is larger than

the input).• Transistors have gain.• Transistors have a collector, a base, and an

emitter.• The C-B junction is reverse biased.• The B-E junction is forward biased.• Most of the emitter carriers reach the collector.• The base current is relatively small but controls

the larger currents.

Page 5: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Amplifier Out

InGain =

In

Out

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N

P

N

NPN Transistor Structure

The collector is lightly doped. C

The base is thin and is lightly doped.

B

The emitter is heavily doped. E

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The C-B junction is reverse biased.

N

P

N

NPN Transistor Bias

C

B

E

No current flows.

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The B-E junction is forward biased.

N

P

N

NPN Transistor Bias

C

B

E

Current flows.

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When both junctionsare biased....

N

P

N

NPN Transistor Bias

C

B

E

Current flowseverywhere.

Most of the emitter carriersdiffuse through the thin base

region since they are attractedby the collector.

Note that IB is smallerthan IE or IC.

IC

IB

IE

Page 10: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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N

P

N C

B

E

Although IB is smallerit controls IE and IC.

IC

IB

IE

Note: when the switch opens, all

currents go to zero.

Gain is something smallcontrolling something large

(IB is small).

Page 11: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Transistor structure and bias quiz

The heaviest doping is found in the___________ region. emitter

The thinnest of all three regions is calledthe ____________. base

The collector-base junction is ___________biased. reverse

The base-emitter junction is ____________biased. forward

The majority of the emitter carriers flow tothe ___________. collector

Page 12: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Concept Review• Amplifiers provide gain (the output is larger than

the input).• Transistors have gain.• Transistors have a collector, a base, and an

emitter.• The C-B junction is reverse biased.• The B-E junction is forward biased.• Most of the emitter carriers reach the collector.• The base current is relatively small but controls

the larger currents.

Repeat Segment

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Concept Preview• The base to collector gain is called (beta).• To find divide the collector current by the base

current.• The emitter current is the largest since it is the

sum of the base and collector currents.• PNP transistors have opposite polarity from NPN

transistors.• In an NPN transistor, the major flow is made up of

electrons.• In a PNP transistor, the major flow is made up of

holes.

Page 14: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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N

P

C

B

E

IC = 99 mA

IB = 1 mA

IE = 100 mA

= IC

IB

The current gain frombase to collector

is called

99 mA

1 mA= 99

Page 15: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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N

P

C

B

E

IC = 99 mA

IB = 1 mA

IE = 100 mA

IE = IB + IC

99 mA= 1 mA +

= 100 mA

Kirchhoff’scurrent law:

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C

B

E

IC = 99 mA

IB = 1 mA

IE = 100 mA

In a PNP transistor,holes flow from

emitter to collector.

Notice the PNPbias voltages.

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Transistor currents quiz

is the ratio of collector current to ______current. base

The sum of the base and collector currentsis the __________ current. emitter

In NPN transistors, the flow from emitter tocollector is composed of _______. electrons

In PNP transistors, the flow from emitter tocollector is composed of _______. holes

Both NPN and PNP transistors show__________ gain. current

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Concept Review• The base to collector gain is called (beta).• To find divide the collector current by the base

current.• The emitter current is the largest since it is the

sum of the base and collector currents.• PNP transistors have opposite polarity from NPN

transistors.• In an NPN transistor, the major flow is made up of

electrons.• In a PNP transistor, the major flow is made up of

holes.

Repeat Segment

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Concept Preview• The NPN schematic symbol shows the emitter

arrow as Not Pointing iN.• The collector curves are a graph of collector

voltage versus collector current.• Both dc beta (dc) and ac beta (ac) can be

determined from the collector curves.• The collector circuit of a transistor can be modeled

as a resistor, as a closed switch or as an open switch.

• The amount of base current determines which of the three models applies.

Page 20: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Emitter

NPN schematic symbol

Base

Collector

Memory aid: NPNmeans Not Pointing iN.

EBC

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Collector

Base

Emitter

PNP schematic symbol

EBC

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IB

IC

VCE

B

C

E

This circuit is used tocollect IC versus

VCE data forseveral values of IB.

Page 23: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

When graphed, the data provide anNPN collector family of curves.

20 A

0 A

100 A

80 A

60 A

40 A

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

20 A

0 A

100 A

80 A

60 A

40 A

= IC

IB

= 15040 A

6 mA

100 A

14 mA= 140 This type of gain

is called dc or hFE.

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

20 A

0 A

100 A

80 A

60 A

40 A

ac = Another type of gainis called ac or hfe.

IC

IB

= 12520 A

2.5 mA

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

20 A

0 A

100 A

80 A

60 A

40 A

IBWith these values of IB:

The C-E model is a resistor.

C

E

Page 27: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

20 A

0 A

100 A

80 A

60 A

40 A

IB When IB >> 100 A

VCE 0

The model is a closed switch.

Page 28: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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0 2 4 6 8 10 12 14 16 18

2468

101214

VCE in Volts

IC in mA

20 A

0 A

100 A

80 A

60 A

40 A

IB When IB = 0

IC = 0

The model is an open switch.

Page 29: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

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Transistor operating conditions quiz

When IB is large and VCE 0, the transistoracts as a ___________ switch. closed

When IB = 0 and IC = 0, the transistoracts as an ___________ switch. open

When IB > 0 and VCE > 0, the transistoracts as a ___________. resistor

Two current gain measures are dc and__________. ac

The symbol hfe is the same as _________.ac

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Concept Review• The NPN schematic symbol shows the emitter

arrow as Not Pointing iN.• The collector curves are a graph of collector

voltage versus collector current.• Both dc beta (dc) and ac beta (ac) can be

determined from the collector curves.• The collector circuit of a transistor can be modeled

as a resistor, as a closed switch or as an open switch.

• The amount of base current determines which of the three models applies.

Repeat Segment

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Concept Preview• It is possible to test transistors out-of-circuit using

an ohmmeter.• The E-B and C-B junctions act as diodes during

ohmmeter testing.• The C-E test shows a high resistance because two

junctions are involved; one of which is reverse biased by the ohmmeter.

• Gain can be verified by using a resistor in conjunction with the ohmmeter test.

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0

The E-B junction is forward biased by the ohmmeter.

V

mA

NPN

E

BC

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0

The C-E resistance is very high.

V

mA

NPN

E

BC

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0

The meter reading is < 100 kdue to gain.

V

mA

NPN

E

BC

100 k

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Concept Review• It is possible to test transistors out-of-circuit using

an ohmmeter.• The E-B and C-B junctions act as diodes during

ohmmeter testing.• The C-E test shows a high resistance because two

junctions are involved; one of which is reverse biased by the ohmmeter.

• Gain can be verified by using a resistor in conjunction with the ohmmeter test.

Repeat Segment

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Concept Preview• Bipolar junction transistors (BJTs) are controlled by base

current.• Junction field effect transistors (JFETs) are controlled by

gate voltage.• JFETs operate in the depletion mode (as normally on

devices).• Metal oxide semiconductor field effect transistors

(MOSFETs) usually operate in the enhancement mode (as normally off devices).

• Insulated gate bipolar transistors (IGBTs) are modified MOSFETs and have very low on-resistance.

• Unijunction transistors (UJTs) are not used as amplifiers.

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Current OutCurrent In CurrentAmplifier

The BJT iscurrent

controlled.

Page 38: McGraw-Hill 5-1 © 2013 The McGraw-Hill Companies, Inc. All rights reserved. Electronics Principles & Applications Eighth Edition Chapter 5 Transistors.

Transistors

BJTs FETs

JFETs MOSFETs

NPN PNP

Depletion Mode Depletion Mode Enhancement Mode

N-Channel N-Channel N-ChannelP-Channel P-Channel P-Channel

D D D D D D

GGGGGG

S S S S S S

CC

E E

BB

BJTs are current controlled and FETs are voltage controlled.

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Current OutVoltage In VoltageAmplifier

The JFET isa voltage

controlledamplifier.

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DrainSource

Drain

Source

Gate

Gate

Structure of anN-channel JFET

P-type substrate

P

N-channel

The channel has carriers so it conducts from source to drain.

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DrainSource

Drain

Source

Gate

Gate

P

N-channel

P-type substrate

A negative gate voltagecan push the carriers from

the channel and turn the JFET off.

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0VDS in Volts

ID in mA

-4 V

-5 V

0 V

-1 V

-2 V

-3 VVGS

N-channel JFET drain family of characteristic curves

This is known as a depletion-mode device.

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n

Source

Gate

Drain

VDD

p

n

It’s possible to make enhancementtype field effect transistors as well.

G

S

D

VGG

Gate bias enhances the channel and turns the device on.

Metaloxide

insulator

N-channelMOSFET

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0VDS in Volts

ID in mA

1 V

0 V

5 V

4 V

3 V

2 VVGS

Enhancement mode MOSFET drain family of characteristic curves

Drain

Source

Gate

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The IGBT (insulated gate bipolar transistor)

Operation and structuresimilar to a MOSFET

Voltage controlled(like the MOSFET)

Has one more junctionthan a MOSFET

Hole injection reducesthe collector resistance

Faster turn off thanBJTs but not as fast

as MOSFETS

RCE = 8.33 m

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Courtesy of Powerex, Inc.

Three major power device technologies

hole injection

Extrajunction

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Typical IGBT driver circuit

IGBT

Typically +15 V for turn on

Typically - 5 to -15 V for turn off

Control signal

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Powerex IGBT module structure

Powerex high voltage IGBT package

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Base 2

Base 1

Emitter

The unijunction transistor fires when its emitter voltage reaches VP.

VP

Emitter current

Em

itte

r vo

ltag

e

Then, the emitter voltagedrops due to its negativeresistance characteristic.

The UJT is not useful as an amplifier.It is used in timing and control applications.

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Other transistor types quiz

BJTs are __________ -controlledamplifiers. current

FETs are __________ -controlledamplifiers. voltage

JFETs operate in the _________ mode.depletion

MOSFETs operate in the __________mode. enhancement

UJTs are not useful as __________.amplifiers

IGBTs are __________ -controlledamplifiers. voltage

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Concept Review• Bipolar junction transistors (BJTs) are controlled by base

current.• Junction field effect transistors (JFETs) are controlled by

gate voltage.• JFETs operate in the depletion mode (as normally on

devices).• Metal oxide semiconductor field effect transistors

(MOSFETs) usually operate in the enhancement mode (as normally off devices).

• Insulated gate bipolar transistors (IGBTs) are modified MOSFETs and have very low on-resistance.

• Unijunction transistors (UJTs) are not used as amplifiers.

Repeat Segment

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Concept Preview• BJTs can be used as switches.• No base current = switch is off.• High base current = switch is on.• The dissipation is always zero in an ideal switch:

off = no current flow and on = no voltage drop.• MOSFETs can also be used as switches: no gate

voltage = switch is off and high gate voltage = switch is on.

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How do transistor switches work?How do transistor switches work?Can be viewed as solid state relays:they are either ON or they are OFF.

BJT switches are characterized by:

high base current (or no base current)

low resistance from collector to emitter(or very high resistance)

low collector dissipationPC = VCE x IC

PC = 0 x IC = 0 W(or PC = VCE x 0 = 0 W)

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LOADLOADLOAD

DRIVER

The driver output is zero volts, IB = 0 and ILOAD = 0The driver output is positive, IB > 0 and the load is onThe driver output is zero volts, IB = 0 and the load is off

RCE RCE 0RCE

NPN SWITCH

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LOAD

DRIVER

The driver output is off (high Z): the resistorpulls the base voltage up so that VBE = 0

PNP SWITCH

The driver output goes low: the voltage dropacross the resistor makes VBE negative

The driver output is off (high Z): the resistorpulls the base voltage up so that VBE = 0

LOADLOAD

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PNP SWITCH WITH NPN DRIVER

LOADLOADLOAD

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NPN SWITCH WITH PNP DRIVER(NEGATIVE POWER SUPPLY)

LOADLOADLOADVBE -0.7 V

VBE +0.7 V

VBE 0 V

VBE 0 V

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A

B

C

D

A B C D

STEPPER MOTOR

Enhancement modepower MOSFETsused as switches

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LOADLOADLOAD

DRIVER

This circuit is oftenused when the driver

amplitude is notgreat enough to

saturate the MOSFET.

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The next slide shows a different type of transistor switch. It does not have a digital output; it has an analog input and output. It does have a digital input for controlling on and off. Thus, these switches can be used to connect or disconnect analog signals. Some are bidirectional left to right or right to left.

Digital on/off input

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© 2013 The McGraw-Hill Companies, Inc. All rights reserved.The signal source is a sine wave.

The output is switched on and off

by the control.

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When the control input (pin 6) is at logic 0, the input signal applied to the COM terminal (pin 1) is routed to the NC (normally closed) terminal (pin 2) and when the control input is logic 1, the input signal is connected to the NO (normally open) terminal (pin 8). The MAX4649 integrated circuit acts as a static (no moving parts) SPDT (single-pole-double-throw) relay. It is an example of a mixed-signal integrated circuit. Mixed signal ICs have both digital and analog features and are covered in more detail in subsequent chapters.

Control input (logic 0 or 1)

Input signal

Output signal

Output signal

The MAX4649 is an integrated

circuit (IC) analog switch.

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Concept Review• BJTs can be used as switches.• No base current = switch is off.• High base current = switch is on.• The dissipation is always zero in an ideal switch:

off = no current flow and on = no voltage drop.• MOSFETs can also be used as switches: no gate

voltage = switch is off and high gate voltage = switch is on.

Repeat Segment

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REVIEW

• Amplification• Transistors• Characteristic Curves• Transistor Testing• Other Transistor Types• Transistors as Switches


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