MICRO PIXEL AVALANCHE PHOTODIODE AS ALTERNATIVE TO VACUUM PHOTOMULTIPLIER TUBES G.S. Ahmadov , Z.Y. Sadygov, F.I. Ahmadov National Nuclear Research Centre, Baku, Azerbaijan G.S. Ahmadov , Z.Y. Sadygov, Yu.N. Kopatch Joint Institute for Nuclear Research (JINR),Dubna 25-th International Seminar on Interaction of Neutrons with Nuclei: «Fundamental Interactions & Neutrons, Nuclear Structure, Ultracold Neutrons, Related Topics» Dubna, Russia, May 23 – 27, 2017
Transcript
MICRO PIXEL AVALANCHE PHOTODIODE AS ALTERNATIVE TO VACUUM PHOTOMULTIPLIER TUBES
G.S. Ahmadov, Z.Y. Sadygov, F.I. Ahmadov
National Nuclear Research Centre, Baku, Azerbaijan
G.S. Ahmadov, Z.Y. Sadygov, Yu.N. KopatchJoint Institute for Nuclear Research (JINR),Dubna
25-th International Seminar on Interaction of Neutrons with Nuclei: «Fundamental Interactions & Neutrons, Nuclear Structure, Ultracold Neutrons, Related Topics»
Dubna, Russia, May 23 – 27, 2017
Talk Outline
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Motivation
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Vacuum Tube Diode
(Fleming)
1875 1900 1925
LightBulb(Edison)
LED (Holonyak)
CRT(Ferdinand
Braun)
Plasma tv(Bitzer/Gene Slottow)
Silicon Transistor(Texas Inst.)
ENIAC (17,468 Tubes)
PhotomultiplierTube (RCA)
1950 1975 2000
So
lid S
tate
Vac
uu
m T
ub
e
...is to provide a solid-state alternative to the vacuum tube based photomultiplier tube (PMT)...
SiMP
Disadvantages:•Large size•Sensitivity to magnetic fields•High supply voltage•The relatively high cost•Quantum efficiency (up to 25%)
Advantages:•High gain factor (107-108)•Low Noise•Large areas (up to several dm2)
Disadvantages:•High operating voltage•Sensitivity to other kinds of radiation (Nuclear counter effect)•Requires charge sensitive amplifiers
PiN diodes
PiN diodes are also used in various experiments. Such diodes have a very simple structure, since the i-region (semiconductor) lies between the regions of n and p conductivity. They do not have internal amplification.
Vacuum photomutliplier tubes
PMT was invented more than 80 years ago and was first device to detect light at the single-photon level. They are widely used in many applications up to now.
Photodetectors
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Avalanche photodiodes
M
Breakdown voltage
0
Ordinary
photodiodes
Linear mode Geiger mode
M<1031 I(t)
M>103
Response to a photon
ISINN-25, Dubna, Russia, May 23 – 27, 2017
• MEPhI/Pulsar (Moscow) - Dolgoshein
• CPTA (Moscow) - Golovin
• Mikron (Moscow) - Sadygov now Zecotek (Singapore) -
• Amplification Technologies (Orlando)
• Hamamatsu Photonics (Hamamatsu, Japan)
• SensL(Cork, Ireland)
• AdvanSiD (former FBK-irst Trento, Italy)
• STMicroelectronics (Italy)
• KETEK (Munich)
• RMD (Boston, USA)
• ExcelitasTechnologies (former PerkinElmer)
• MPI Semiconductor Laboratory (Munich)
• Novel Device Laboratory (Beijing, China)
• Philips (Netherlands)
Every producer uses its own name for this type of device: MRS APD, G-APD, MAPD, SiPM, SSPM, MPPC, SPM, DAPD, PPD, SiMPl , dSiPM
Prices: about 15 € / mm2 which is 10 times lower than in 2008
MAPD vendors
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Equivalent circuit of a pixel of the GAPD
Equivalent circuit of a pixel of the GAPD
The Hamamatsu and SENSL technology does not allow producing high density cells (>5000 cells / mm2) and high PDE (>15%). However, their technology makes it possible to obtain very fast pixel recovery times (<6 ns). GAPD can be triggered several times due to the fast recovery of pixels, which should lead to an effective increase in the dynamic range of the GAPD.
Zecotek technology allows the production of high-density pixels (> 15000 pixels/mm2) and high PDE (> 25%). However, the Zecotek MAPD has a slow pixel recovery time (95% is restored in < 1 µs). In this technology, the function of a quenching individual resistor is performed by artificial potential wells.
Silicon photomultipliers are nowadays considered a promising alternative to conventional vacuum tube photomultipliers. MAPD is one successful type of the silicon photomultipliers. Micro-pixel avalanche photodiode manufactured by Zecotek Photonics Inc.
• PDE (~40%)
• High gain (~106)
• Low operation voltage (~90 V)
• High pixel density (1*104-4*104 pix./mm2)
• Insensitive to magnetic field
• very compact
• very robust
Design of MAPD
1-Si substrate of n-type; 2 - epitaxial layer of n-type; 3 - epitaxial layer of p-type; 4 - thin layer of n+ -type; 5 - n+ -type regions (pixels); 6 - p+ -type layer; 7 - metal contact; 8 - guard ring n + - type; 9-n+ -type layer.
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Operational principle
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The existence of quenching resistor (artificial potential wells) limit the recharge of MAPD, so decrease of Q, also decrease Vop – Vbr and avalanche process will stop (quenching) but recharge through the quenching resistor will continue after the quenching process (recharge).
The basic operation can be explained in three modes as charge, discharge and quenching. To simplify the explanation, we assume the MAPD as capacitance like element. This capacitance is charged at Vop (charge) and stands till incidence of photon occurs. The photon incidence occur the avalanche process in MAPD, and current will begin to flow (discharge).
Gain
11
The gain can be calculated from the overvoltage ΔV, the microcell capacitance C, and the electron charge, e.
G=C ΔV/e⋅
ISINN-25, Dubna, Russia, May 23 – 27, 2017
MAPD-3A (1) and MAPD-3N (2)
APD (1) and MAPD-3B (2)
MAPD-3A (1) and MAPD-3N (2)
The recovery time of pixels is depend on the density of impurities in pixels (n+ -regions) and on the depth of the potential well (capacity). The potential well serves as a quenching individual resistor in MAPD.
Recovery time
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MAPD Timing Response
13
• Measurement of MAPD with LFS-8 crystal and 22Na source• MAPD contains 15k/mm2 Single Photon Counting
Detectors
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Photon detection efficiency (PDE)
The photon detection efficiency (PDE) is a measure of the sensitivity of an SiPM and is a function of wavelength of the incident light, the applied overvoltage and microcell fill factor. The PDE differs slightly from the quantum efficiency (QE) that is quoted for a PMT or APD, due to the microcell structure of the sensor. The PDE is the statistical probability that an incident photon interacts with a microcell to produce an avalanche, and is defined as: PDE(λ,V) =η(λ) ε(V) F⋅ ⋅ η(λ)-the quantum efficiency of silicon ε(V)-the avalanche initiation probability F - the fill factor of the device.
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Светодиод с длиной волны 450 нм (1кГц, 10 нс)
Коэффициент усиления - 1,35∙105 Чувствительная область - 3×3 mm2
Zecotek technology allows to produce MAPD with high pixel density(>15000 cells / mm2). This is very important, since it allows to cover a wide range of photon energies (even more than 30 GeV), if assuming that a 1 GeV photon produces up to two thousand photoelectrons.
The number of pixels ensures the linearity of the MAPD
A large pixel density or fast recovery time is needed for a large dynamic range
The gain is 1.35 ∙ 105
Sensitive area - 3 × 3 mm2Number of pixels - 1,5 ∙ 104 / mm2Operating voltage - 90 VThe efficiency of photon registration is 25%
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Temperature dependence
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Temperature dependence
Sequence of 500 pulse shapes from a Zecotek SiPM of type MAPD-3N at a bias voltage of 82.55 V, operated at T=4 K. The average light intensity was of the order of one photon.
Pulse shape from a Hamamatsu SiPM of type S10362-11-100P operated at 77 K. The long fall-time of the signal over microseconds shows the failing quenching process.
M. Biroth et al. Nuclear Instruments and Methods in Physics Research Section A, Volume 787, 2015, p. 68–71
ISINN-25, Dubna, Russia, May 23 – 27, 2017
MPSF-3N1P
The diodes were irradiated with protons with energy 150 MeV in Phasotron accelerator (DLNP, JINR).
1- before 2- 1*1010proton/cm2 3- 5*1010proton/cm2
4- 1*1011proton/cm2
Radiation hardness of MAPD
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Registration of electrons
The signal and the pulse height spectrum was obtained using a GUN-UV lamp (6-16 keV).
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Registration of alpha particles
Pulse height spectrum of alpha particles from radioactive source Am-241 (5.5 MeV)
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Scintillation detectors based on MAPD
Material NaI(Tl) LFS-3 LFS-8 LYSO LiI(Eu) BGO
Density(g/cm3) 3.67 7.35 7.35 7.3 4.18 7.13
Light output (%) 100 85 80-85 75 30-35 15-20
Decay time, (ns) 235 35 <33 50 1400 300
Peak emis, (nm) 410 425 422 375 425 480
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Gamma ray scintillation detectors based on MAPD and NaI(Tl) scintillator
Cs-137 gamma source (662 keV)
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Gamma ray detector based on MAPD matrix (2*2) and LYSO scintillator
The size of the scintillator was 6*6*2 mm3, and the matrix - 7.5*7.5 mm2.
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Gamma ray scintillation detectors based on MAPD and LFS scintillator
Gamma ray energy spectra were obtained using LFS-8 scintillator (3*3*0.5 mm) coupled to MAPD. The MAPD gives good linearity up to 1 MeV (gamma).
ISINN-25, Dubna, Russia, May 23 – 27, 2017
Neutron detectors based on MAPD+ LiI(Eu) and plastic scintillator
LiI(Eu) scintillator gives light yield of LiI(Eu) scintillator gives light yield of 12000 photons/MeV deposited energy 12000 photons/MeV deposited energy of gamma and 50000 photons/neutron of gamma and 50000 photons/neutron for neutron It is characterized by its for neutron It is characterized by its decay time of 1400 ns. The maximum decay time of 1400 ns. The maximum wavelength of light emission is 420 wavelength of light emission is 420 nm.nm.
Neutron and gamma spectra from Ti-44 gamma and PuBe
neutron source
Neutron and gamma spectra from Ti-44 gamma and PuBe neutron source
Plastic scintillator gives light yield of Plastic scintillator gives light yield of 27000 photons/MeV deposited 27000 photons/MeV deposited energy, and characterized by its energy, and characterized by its decay time of 3.7 ns. The maximum decay time of 3.7 ns. The maximum wavelength of light emission is 420 wavelength of light emission is 420 nm.nm.
