Experience and Expertise • Extensive experience working with global and regional organizations
(private and public) providing guidance on key strategies related to technology, innovation and business development
• Particular expertise assisting R&D and strategy teams in leading companies with the development and implementation of their growth strategies in:
- Technology strategy development - Innovation and Intellectual Property management - R&D and Innovation Planning/Policy/Technology Costs
Ankit A. ShuklaPractice Director,
2
- R&D and Innovation Planning/Policy/Technology Costs - Future R&D focus/strategic partnership development
• Experience base covering broad range of sectors and technology clusters including Microelectronics, Energy, Aerospace, Defence, Automation, Materials, ICT, Healthcare etc.
Education• MS in Control Systems from University of Sheffield (Sheffield, UK)• B.Eng in Instrumentation & Control Engineering from Gujarat University (India)
Europe
Technical Insights
Frost & SullivanGlobalOxford, UK
Agenda
1. Global overview of microelectronics
2. General macroeconomics in Russia
3. Microelectronics in Russiai. Current situationii. Trends
The Global Semiconductor Market Worth US$ 320.4 Billion in 2012*
EUROPE
17.2% of the world market17.2% of the world market
12.1% of the world market12.1% of the world market
15.3of the world market
15.3of the world market
54.7% of the 54.7% of the
<1% of the world market<1% of the
world market
RUSSIA• In 2012 the Russian semiconductor
market is expected to be valued at US$ 2.2 billion. With new initiatives and Mega Trends in the global Industry and in its optimistic scenario, F&S forecast that by 2018 the market could total US$9.9 billion
Global Semiconductor Market Size – Breakdown of Consumption by Region
5
EUROPE• After a brief slowdown, in
2010 the European semiconductor market expanded by 27%, totalling US$ 38.6 billion
AMERICAS• Sales of semiconductors are
concentrated in the North America, particularly in the US
• In 2011, North American semiconductor market grew by 40.7%, the highest regional growth, reaching US$ 54.2 billion
ASIA PACIFIC• The semiconductor market has
risen by 35% amounting US$ 175.3 billion
• China’s demand for industrial and automotive ICs was among the key growth drivers
JAPAN• Following a difficult 2009,
the Japanese semiconductor market amounted to US$ 49.0 billion in 2010, 21.1% year-on year growth
world marketworld market54.7% of the world market54.7% of the world market
*Source: World Semiconductor Trade Statistics, IC Insights, Frost &Sullivan analysis
Semiconductor Market in 2012* – Snapshot
COMPUTERS
COMMUNICATIONS
CONSU
6
UMER
Total semiconductor revenue for 2012 stood at 320.4* billion Total semiconductor revenue for 2012 stood at 320.4* billion
*Note: Revenues mentioned here are market estimates
Seven Distinctive Semiconductors Manufacturing Hubs in the World
World Map of Manufacturing Hubs
CHINA• Agglomeration of assembly and test
facilities due to economies of scale and cost-advantages
• Growing foundry business to serve booming domestic demand – ICs for consumer electronics, industrial and automotive sectors
JAPAN• Home base for several
semiconductor majors – Sony, Toshiba, Renesas, Elpida (both wafer fabrication as well as assembly and testing facilities)
• The industry faces ever-increasing competition from South Korean and Taiwanese rivals.
EUROPE• Semiconductor clusters around Grenoble
(France), and Dresden (Germany)• Wafer fabs, R&D and design centres from
STMicroelectronics, NXP, Infineon, etc.• Trend towards decreasing the number of
fabs due to high upgrade costs and foundry outsourcing instead
7
US• Wafer fabrication and R&D centres
concentrated in Texas and California
• Intel, Texas Instruments, Samsung and Freescale continue to expand in the US due to established industry ecosystem in place.
TAIWAN• A foundry service centre of the
world – Taiwan Semiconductor Manufacturing Company (TSMC) and United Microelectronics Corporation (UMC).
ASIA PACIFIC• A number of major Western and Japanese
semiconductor companies located their test and assembly facilities in Malaysia and Philippines
• Singapore - wafer fabrication facilities from STM, NXP and Micron
SOUTH KOREA• Place of origin for two of the
world’s largest semiconductor companies –Samsung and Hynix, both with further plans for expansion
Source: Frost &Sullivan analysis
Evaluation of Current Business Models
• Full product life-cycle in-house
Be
ne
fits • Eliminates the need for
CAPEX in advanced manufacturing capacity
• Allows to combine both
• Higher ROI: industry average gross margin ~50%
• Lower CAPEX: design costs of 45nm SoC ~$80
• State-of-the-art manufacturing
• Economies of scale
IDM Fab-Lite Fab-Less Foundry
• Capital and operational expenditure required
• Envisaged return on investment
• Innovation focus
• Global competitive landscape in semiconductor industry
• International best-practices and trends
Evaluation criteria
8
Be
ne
fits
• Capital intensive, leading-edge technology
• Volume of production and breadth of operations should justify owning a fab
• The business model per se is waning; existing IDMs should be viewed as potential technology partners rather than a business model to pursueC
on
clu
sio
nR
isk
s
• Allows to combine both manufacturing and stronger R&D focus.
• The need to sustain existing fabs at profitable levels (high utilization rate)
• A transitional model towards fabless business
Examples:
• IBM and Renesas: moving to fab-lite, R&D-heavy; will never built a major fab again
costs of 45nm SoC ~$80 million
• Drives innovation
• Shorter time-to-market
• Suitable for smaller and start-up companies
• Dependency on foundries and associated risks;
• IP protection importance
• The most favourable business option to pursue in the current semiconductor environment: from innovation standpoint, business-wise
• Extremely high CAPEX and OPEX: 300mm fab start-up costs ~$2.5-3bn for 90-65nm, ~$3.5-4.5 bn for 45-32nm.
• R&D costs for process technology: ~$0.6-0.9bn for 45-32nm, ~1.3bn for 22nm
• Lower ROI (industry average gross margin ~20-30%)
• Modern foundry requires extra-orbitant investment, offers smaller returns
• Consolidation and regional concentration in the industry
Microelectronics Capability Requirement for Russia
Capital and land
Effective transportation
/ logistics
Capital and Land
• Russia boasts no shortage of land mass for manufacturing expansion as opposed to, for example, Taiwan or South Korea – both countries also prone to earthquake impacts as a stability concern for the industry.
• Government’s support of microelectronics development, we
Robust Public-Private Framework
• Globally, semiconductor industry has evolved due to successful cooperation between public and private institutions – governmental bodies, R&D institutes, business investors.
• In particular, Russia must encourage and facilitate commercialization of innovations by large number of start-ups and R&D centres in the country.
Effective Transportation/ Logistics
• Both semiconductor and electronics manufacturing rely heavily of effective logistics system – Russia is advantageous on the cost side, however a lot yet to be done in terms of efficiency.
• On a flip side, advances in microelectronics can help solving some of the pressing issues in transportation
9
Robust Public-Private
Framework
Technical and Managerial Competence Tax and Tariffs
Tax and Tariffs
• Semiconductor industry remains sensitive about various policy issues. The Government must create the right incentives for investment by revisiting its policy for tax and import/export duties, in order to become competitive on a world stage.
• Creation of economic zones with preferential treatment as Zelenograd or Skolkovo is a welcoming step forward.
microelectronics development, we believe, also signifies readiness to provide capital funding.
of the pressing issues in transportation (RFID tagging, satelite navigation, stolen vehicles tracking).
Technical and Managerial Competence
• Russian has good technical education, with proper training in microelectronics its graduates could become a potent driving force behind the industry growth.
• More is to be done in terms of developing managerial competencies.
The right timing given the market’s normal demand cycles
The right timing given the market’s normal demand cycles Russia could be
strategic hub for supplying microelectronics
Russia could be strategic hub for supplying microelectronics
Growing demand for microelectronics from developing industries
Growing demand for microelectronics from developing industries
ICTICT
AutomotiveAutomotive
RailRail
Medical devicesMedical devices
NavigationNavigation
RFIDRFID
Smart gridsSmart grids
GlobalGlobal
CEECEE
CISCIS
OthersOthers
Opportunity for Russia on the Global Microelectronics Stage
10
The opportunity for Russia is defined
by …
The Russian Government is advocating full support
The Russian Government is advocating full support
The ability to engage in a partnership to address weaknesses
The ability to engage in a partnership to address weaknesses
Experience with 90nm tech provides solid foundation
Experience with 90nm tech provides solid foundation
• Semiconductor industry worldwide can be characterized by two seemingly contradictory aspects – intense rivalry and breadth of collaboration across various levels.
• That is, in order to succeed in such an environment, a company/country cannot afford to stay isolated, the need to open up the business and partner search is vital.
Key Insight
Customer partnership
Joint Development
Partnership Requirement Evaluation
• Speaking to and cooperation with your customers – the way for semiconductor companies to succeed these days.Examples:
• Strategic alliances with customers as part of STM’s business strategy: Magnetti Marelli (Italian producer of automotive electronics), LifeNexus (US, personal eHealth-card), Arad (Israeli smart water meters manufacturer), consumer electronics and telecoms – Alcatel-Lucent, Bosch, HP, Nokia, Pioneer, etc.
• Despite intensive rivalry among leading semiconductor companies, close cooperation is all too common. In particular, in the areas of joint R&D aimed at bringing ever-rising costs down and sharing the risks.
Examples:
• Crolles2 (2002-2007, France): STM, NXP, Freescale, Toshiba and others – joint collaboration to develop CMOS logic chips at
11
Development Agreement
(JDA)
Human capital transfer
Inter-state rivalry
• Crolles2 (2002-2007, France): STM, NXP, Freescale, Toshiba and others – joint collaboration to develop CMOS logic chips at 45nm and 300mm wafers.
• IBM Alliance (ongoing, US): IBM, Samsung, GlobalFoundries, STM, etc. – R&D at <28nm process nodes.
• One of the first major obstacles any newcomer on a semiconductor stage faces is a lack of trained industry professionals. Hence, human resources development with an assistance of experienced partner is necessary.
Examples:
• Advanced Technology Investment Company (Mubadala Group, GlobalFoundries’ owner) signed a deal with Singapore Polytechnic to train wafer fabrication technicians for a planned 300mm fab in Abu-Dhabi.
• Brazil IC Project: 20 Brazilian semiconductor engineers will receive training at Toshiba’s facilities in Kawasaki.
• In a semiconductor world, competition is often defined not only at the company but also at the country level.Examples:
• Facing tough challenge from the South Korea (i.e. Samsung and Hynix), leading Japanese memory producer – Elpida, reached an agreement with Taiwan’s Powerchip Technology in a deal which was immediately dubbed as “Taiwan and Japan vs. South Korea” (February 2011). More of the same is expected to follow.
• Experts also voice opinion for India and China to join forces for them to succeed in semiconductor industry: the former has excelled in IC design while the latter is a major manufacturing hub.
Partner Evaluation Criterion
✔✔✔✔ Current exposure in Russia
Company’s presence in Russia, including non-microelectronics businesses, in particular –availability of manufacturing capacities or R&D centres
✔✔✔✔ Political and economic relations
Major semiconductor corporations are the beacons of their homeland’s technological and economic prowess; cooperation with such firms usually involves senior government officials and evolves within a framework of wider intergovernmental relations. For example, Brazil’s engagement with Toshiba in the field of microelectronics was initiated at Brazil-Japan talks; Intel’s Chairman personally flew and met with Israeli Prime-Minister to discuss potential investment into new fab.
✔✔✔✔ Product focus
12
✔✔✔✔ Product focus
Relevance of the company’s product portfolio to the domestic microelectronics demand in Russia is crucial. For example, partnering with a company which solely produces memory ICs or chipsets for mobile communications is less attractive due to lack of internal demand
✔✔✔✔ Investment outlook
That is company’s on-going, large-scale investment projects elsewhere would make commitment to a significant project in Russia less likely
✔✔✔✔ Business model and strategy
For example, foundries are less attractive for knowledge sharing and technology transfer agreements
✔✔✔✔ Other
Collaboration history, experience/willingness to operate in the emerging markets’, past technology transfer agreements, cooperation with government bodies
Existing Global Companies’ Prospective Interest in Russia
• Previous track record of collaboration on 90nm project.
• Company’s interest in cooperation, as expressed at Rusnano
• Large exposure in the Russian market: LCD assembly plant in Kaluga, LG and Samsung R&D centres, brand
• Ongoing R&D Russia – cooperation with Moscow Institute of Electronic Technology.
• Attractive product
• Business proximity with Europe.
• Attractive product focus: smart cards, ICs for automotive and industrial
STMicroelectronics SamsungFreescale
SemiconductorInfineon/ NXP
• This is a preliminary analysis which allows to perform top-level assessment of the potential partners.
• The criteria can be used as a framework for further in-depth evaluation of strategic partnership options, including beyond the Top-20 semiconductor company list.
• Financial losses at ST-Ericsson joint venture, the restructuring
Re
str
ain
ts
expressed at RusnanoForum, November 2010
• Attractive product
focus: smart metering, smart cards, LED drivers, automotive.
• $1.1-1.5bn CAPEX for 2011, healthy financial results in 2010.
Be
ne
fits
• Large ongoing investments: $10.7bn in Korea, $3.6bn in Texas.
• Product focus: consumer electronics, memory.
centres, brand recognition, etc.
• Strong ties with South Korea – Mr. Medvedev’s visit in November 2010, promoted 40-year gas deal, Hyundai among the largest automotive investors.
• The company filed for an IPO with SEC in an attempt to cover its $7.6bn debt (February 2011).
• Closure of 2 fabs.
• Attractive product focus: industrial, automotive, energy and lighting, healthcare.
• Experience in the emerging markets –R&D centre in Mexico.
• Infineon – previously failed attempt to acquire the company; $750m upgrade of existing facilities in Austria and Malaysia.
• NXP - $3.7bn debt burden, $406m net loss in 2010, restructuring after an IPO in 3Q of 2010.
and industrial applications.
• Texas Instruments -brownfieldinvestment strategy (acquisition of 2 fabsin Japan and 1 in China), expansion in Asia.
• Fujitsu –restructuring after 2008 spin-off, huge financial losses and workforce cut in 2009.
applications.
Inputs into the Microelectronics Market in Russia
1. We believe that there is an opportunity for Russia to be established as a manufacturing hub in the global micro-electronics industry.
2. Given the industry’s demand cycles and given the lead-time for Russia to move from planning to execution, there is a limited window-of-opportunity.
3. There is a tendency for specialisation (fabless/ fab-lite vs. foundry), rather than implementation of an end-to-end (IDM) business model.
14
4. Irrespective of the business model, countries wishing to be established as a global hub need to develop a powerful value proposition based on an holistic ecosystem.
5. For the strategy to be successful, partnerships at several levels are required – a technology-focused approach is insufficient.
Having a clear strategy based on these points PRIOR to engaging potential partners is critical.
3D Integration
15
3D Integration
3D Integration--Introduction, Trends, and Importance
The 3D integration refers to a variety of technologies allowing for multiple conventional device layers to be
stacked and electrically interconnected. The concept has been widely commercialized in the form of 3D
packaging technology, but in order to satisfy the high bandwidth demands of future multifunctional,
heterogeneous systems, the industry is developing more sophisticated solutions. A number of companies
The 3D integration refers to a variety of technologies allowing for multiple conventional device layers to be
stacked and electrically interconnected. The concept has been widely commercialized in the form of 3D
packaging technology, but in order to satisfy the high bandwidth demands of future multifunctional,
heterogeneous systems, the industry is developing more sophisticated solutions. A number of companies
The emergence of high-performance digital consumer electronics is pushing electronics manufacturers to
rapidly increase performance and capabilities of their products in order to stay competitive in the market.
Customers want their systems not only to offer supreme performance and new features, but also require
small size and long-battery operation time. Hence, electronic industry is constantly looking for technologies
to support the trend for more powerful and functional devices in small form factor and low-energy
requirements. And with the traditional 2D technologies reaching technological and economical limits, 3D
integration is seen as a solution to meet these demands.
The emergence of high-performance digital consumer electronics is pushing electronics manufacturers to
rapidly increase performance and capabilities of their products in order to stay competitive in the market.
Customers want their systems not only to offer supreme performance and new features, but also require
small size and long-battery operation time. Hence, electronic industry is constantly looking for technologies
to support the trend for more powerful and functional devices in small form factor and low-energy
requirements. And with the traditional 2D technologies reaching technological and economical limits, 3D
integration is seen as a solution to meet these demands.
IntroductionIntroduction
CurrentCurrent
16
Chip vendors are facing surging design and manufacturing costs due to increasing complexity of new
devices. There are many ways, in which 3D integration can bring new opportunities and benefits for
electronic industry. Stacking of multiple active layers can significantly enhance the performance of the chip,
reduce its power consumption, and ensure small form size. The 3D domain offers give designers flexibility to
combine heterogeneous devices of disparate types in a single chip. This will allow for more powerful and
functional devices, such as stacking processor unit with memory.
Chip vendors are facing surging design and manufacturing costs due to increasing complexity of new
devices. There are many ways, in which 3D integration can bring new opportunities and benefits for
electronic industry. Stacking of multiple active layers can significantly enhance the performance of the chip,
reduce its power consumption, and ensure small form size. The 3D domain offers give designers flexibility to
combine heterogeneous devices of disparate types in a single chip. This will allow for more powerful and
functional devices, such as stacking processor unit with memory.
heterogeneous systems, the industry is developing more sophisticated solutions. A number of companies
are investigating means of incorporating through-silicon via a vertical interconnection that passes through
silicon (Si) die to provide electrical connection between different layers in 3D IC stack, in commercial
applications.
heterogeneous systems, the industry is developing more sophisticated solutions. A number of companies
are investigating means of incorporating through-silicon via a vertical interconnection that passes through
silicon (Si) die to provide electrical connection between different layers in 3D IC stack, in commercial
applications.
CurrentTrend
CurrentTrend
Why 3D IC?Why 3D IC?
Source: Frost & Sullivan
Key Technologies For 3D Integration
The 3D integration refers to technologies for vertically stacking a number of electronic components and connecting them with vertical
interconnects. The concept has been first brought to market in the form of 3D packaging techniques, which allowed for significant
reductions in area, speed, and power usage of the device. Through-silicon vias integration is a novel underlying technology for 3D
ICs, which can offer further advantages in performance, speed, and functionality.
The 3D integration refers to technologies for vertically stacking a number of electronic components and connecting them with vertical
interconnects. The concept has been first brought to market in the form of 3D packaging techniques, which allowed for significant
reductions in area, speed, and power usage of the device. Through-silicon vias integration is a novel underlying technology for 3D
ICs, which can offer further advantages in performance, speed, and functionality.
3D Packaging Wafer-Level Integration 3D On Chip
17
• Well established technology with a large number of players and applications in the market.
• Based on generic, high-yielding packaging,and interconnection technologies.
• Lower investment and operating costs than competitive 3D technologies.
• Relatively low 3D interconnects density.
• 3D integration realized at wafer level to achieve high-interconnect density is a promising technology for electronic industry.
• Multiple TSV (through-silicon-vias) based technologies are examined for commercial use.
• Industry is working toward developing cost-effective, high-yielding fabrication processes.
• Design constraints still exist, such as TSV layout, thermal management, and electrical coupling.
• 3D integration at the device level to build the chips themselves in three dimensions.
• Aimed for most performance demandingapplications.
• Requires developing design methodologies and fabrication processes.
• The 3D IC technology is still in the R&D and there are still technology roadblocks to be addressed before it is commercialized.
Cost-effective alternative to the limitations of traditional
interconnect technology and costly advanced
lithography-based processes
Enabling new applications and features. Capable of
integrating multiple functionality in a single
chip
3D Integration Technology--Strengths and Limitations
18
Lim
itatio
ns
Lim
itatio
nsCost and yield constraints
of 3D integration processes. Industry must develop repeatable and
cost effective manufacturing processes
Lack of standards and dedicated supply chain
Design challenges and thermal management. Lack of methodology and EDA
tools for design and verification processes
Source: Frost & Sullivan analysis
Technology challenges in terms of reliability, density,
and performance
Emerging Applications
3D integration enables heterogeneous integration of chips ofdifferent functionalities and wafer technologies in singlesystem. Integrating several layers of functional componentsoffers advantages of low-power requirements and highlyimproved functionality without increasing the size of the chip.Technology with the biggest potential for the future 3D chipsis through-silicon vias. Strong backing from the key industryparticipants coupled with significant technologyadvancements in the recent years has allowed TSV-basedchips to enter the commercial market.
CMOS Sensors
Memory Stacking
Logic + MemoryFPGA
Analog
IC and MEMS
• Increased Functionality
• Decreased Total Area
• Low Power Requirements
• Shorter Interconnect Delays
• Increased Functionality
• Decreased Total Area
• Low Power Requirements
• Shorter Interconnect Delays
Memory on Logic
3D Opto-Electronic
Integration
19
Memory Stacking
20132011 >2015
CMOS Image Sensors
Interposers
Wide-Bandwidth Memory Stacking
Heterogeneous 3D IC
Logic Die Partitioning
Source: Frost & Sullivan
Emerging Memory Technologies
20
Emerging Memory Technologies
Industry Scenario
Technologies
Magnetoresistive
RAM
Phase
Change
Memory
• There has been persistent demand for high density, low cost, low power, and high-performance data
storage devices attributed by end-user’s ever growing need for more memory.
• Storage capacity of devices such as hard disk drives and flash drives are constantly enhanced; solid state
drives with NAND flash memory are gaining momentum.
• While CDs and DVDs are currently the most popular low-cost storage device, Blu-Ray discs though
attributed by high-storage capacity are expensive and not widely adopted. Technologies, such as,
holographic technology are capable of offering high-storage densities, but it is still in the development stage.
• To effectively address the challenges associated with certain existing and emerging data storage
technologies, researchers are investigating new memory technologies such as magnetoresistive random
access memory (MRAM), nanotechnology-based memory (NRAM), phase change (PCM/PRAM) and
ferroelectric memory (FRAM).
• There has been persistent demand for high density, low cost, low power, and high-performance data
storage devices attributed by end-user’s ever growing need for more memory.
• Storage capacity of devices such as hard disk drives and flash drives are constantly enhanced; solid state
drives with NAND flash memory are gaining momentum.
• While CDs and DVDs are currently the most popular low-cost storage device, Blu-Ray discs though
attributed by high-storage capacity are expensive and not widely adopted. Technologies, such as,
holographic technology are capable of offering high-storage densities, but it is still in the development stage.
• To effectively address the challenges associated with certain existing and emerging data storage
technologies, researchers are investigating new memory technologies such as magnetoresistive random
access memory (MRAM), nanotechnology-based memory (NRAM), phase change (PCM/PRAM) and
ferroelectric memory (FRAM).
OverviewOverview
21
Technologies
Ferroelectric
Memory
Nanotechnology
-Based Memory
Emerging Memory Technologies
• MRAM is gaining momentum; and with improvements in performance and density, MRAM can be used for
data storage applications (solid-state drives). High speed, high capacity, non-volatility are the key attributes
that make MRAM a candidate of choice compared to other emerging memory technologies. With spin-
transfer-torque-write MRAM and toggle MRAM considered as alternate switching mechanisms to
conventional MRAM, spin-transfer-torque-write MRAM is gaining attraction in the recent years, due to its
low-power consumption and enhanced scalability over conventional MRAM.
• Ferroelectric memory is characterized by high-access speed, high endurance in write mode, low-power
consumption, non-volatility, and excellent mechanical resistance. Such memory finds potential use in smart
cards, where high security and low-power consumption features are desired, as well as in cellular phones
and other applications such as data storage devices.
• PCM/PRAM is attributed by high endurance and enhanced scalability; PRAM may be considered in
computer memory as well as in data storage systems/solid state drives in the long term.
• Nanostructures such as CNTs are evolving to be potential data storage technologies due to their enhanced
scalability and storage capacity.
• MRAM is gaining momentum; and with improvements in performance and density, MRAM can be used for
data storage applications (solid-state drives). High speed, high capacity, non-volatility are the key attributes
that make MRAM a candidate of choice compared to other emerging memory technologies. With spin-
transfer-torque-write MRAM and toggle MRAM considered as alternate switching mechanisms to
conventional MRAM, spin-transfer-torque-write MRAM is gaining attraction in the recent years, due to its
low-power consumption and enhanced scalability over conventional MRAM.
• Ferroelectric memory is characterized by high-access speed, high endurance in write mode, low-power
consumption, non-volatility, and excellent mechanical resistance. Such memory finds potential use in smart
cards, where high security and low-power consumption features are desired, as well as in cellular phones
and other applications such as data storage devices.
• PCM/PRAM is attributed by high endurance and enhanced scalability; PRAM may be considered in
computer memory as well as in data storage systems/solid state drives in the long term.
• Nanostructures such as CNTs are evolving to be potential data storage technologies due to their enhanced
scalability and storage capacity.
TrendsTrends
Stakeholders and Development EffortsMRAM
MRAM–Potential
ApplicationsDefense
Medical Diagnostics and Biotechnology
RAID; Storage Systems
Automotive
Aerospace
Cognitive Computing
SpaceIndustrial Automation/
Everspin; Micron
Stakeholders
Spingate; NASA
Crocus;QuantumWise ST Microelectronics
TSMC; NVE; Singulus Toshiba; Hynix; IBM
Samsung; MagSil Honeywell; Spintec
22
Industrial Automation/ Smart Metering
• Everspin is developing MRAM chips catering to the needs of different markets.Company sources claim to have shipped over 4 million MRAM chips till date (unitscommenced shipment in 2011), and anticipate to produce more in 2012. They claimto have over 300 customers and 100 products in the market. The company is a keyprovider of spin transfer torque MRAM.
• Samsung Electronics acquired Grandis (a key developer of spin transfer torque (STT)MRAM)
• Toshiba and Hynix have entered into joint development agreement to developcommercial MRAM (STT-MRAM) and these companies have exchanged their patentcross licensing and product supply agreements toward development. Collaborativeefforts has been observed between Micron Technology and A*STAR; and Crocusand IBM.
Activities
Key Trends
� Co-development efforts to commercialize products.
� Acquisition to enhance development efforts.
� Cross licensing of patents for joint development
� New applications are explored.
Stakeholders and Development EffortsFerroelectric Memory
Ramtron; Symetrix
Stakeholders
Fujitsu; Rohm
Texas Instruments Infineon; NASA
Thin Film Electronics Samsung; Toshiba
Hynix; PARC Panasonic
Ferroelectric Memory–Potential Applications
Smart Cards
Smart Meters
Automotive Controllers
Medical
Space
Industrial
Consumer Electronics/
Printed Electronics
Aerospace and Defense
23
• SilTerra Malaysia Sdn Bhd (SilTerra) and Symetrix entered into a collaboration tooffer FRAM memory products (as standard memory offering). The partnership isexpected to enable production of new products for smart applications.
• Fujitsu has extended its ferroelectric memory product portfolio that can provideflexibility for consumer and industrial applications (by expansion in voltage rangedesigned to improve logistical and operational efficiency while reducing componentcost).
• Research efforts have been driven toward developing ferroelectric memory on plasticsubstrates. Thin Film Electronics ASA and Palo Alto Research Center (PARC) havedeveloped a printed prototype of non-volatile ferroelectric memory. Thisdevelopment will enable production of roll-to-roll printable memory forInternet-of-Things.
Activities
Key Trends
� Collaborative efforts to develop new products and enable
new applications.
� Efforts to enhance commercialization.
� Research and development activities for developing
ferroelectric memory on plastic substrates .
Smart Cards
Stakeholders and Development EffortsPCM/PRAM
Micron
Stakeholders
Ovonyx
IBM; Intel Samsung
Hitachi Renesas
Automotive
Consumer electronics
PCM/PRAM–Potential
Applications
AerospaceRadiation sensitive;
24
• Researchers from the University from California, San Diego, along with MicronTechnology, BEEcube, and Xilinx have developed a PCM-based solid state storagedevice (SSD) which is attributed by improvements in speed over current SSDtechnology.
• IBM engineers have demonstrated PCM that can store data for longer periods andthis can lead to reliable, fast, and low-cost solid state chips that can perform betterthan flash memory chips.
• Researchers from University of Illinois Urbana-Champaign have identified a way tominimize the volume of material used in the memory thus reducing the powerrequirement compared to conventional devices. The research team has used CNTsfor the proposed approach.
Activities Key Trends
� Persistent efforts to improve the performance of the PCM
to move closer toward demonstration and
commercialization.
� Joint development efforts to realize commercial
products.
sensitive; space; defense
Stakeholders and Development EffortsNanotechnology-Based Memory
• Nantero develops CNT-based memories intended for a broad spectrum ofapplications. The company has partnered with organizations such as, LockheedMartin, ON Semiconductor, Brewer Science, HP, SVTC Technologies, ASML, andLSI Logic or development. The company is strengthening its patent portfolio.
• Researchers from the Georgia Institute of Technology have developedpiezoelectrically modulated resistive memory (PRM) devices that are based on zincoxide nanowires. The technology can be utilized for developing nano-electromechanical systems on a single chip, and can be employed for variousapplications that demand high performance. Similarly, there are research activitiesthat focus on leveraging nanowires for storage applications.
• Graphene nanoribbons are being investigated as memory chips.
Activities
Key Trends
� Investigation of different nanostructures for use as
memory device.
� Improved development efforts in CNT-based memory.
� Still the technology is in the nascent stages of
development.
Aerospace & Defense
Compound Semiconductor
26
Technology Snapshot
• Silicon MOSFETs have now approached a performance plateau, while cost of advancements
has increased dramatically. Concurrently, next generation and emerging applications are
demanding further substantial leaps in power conversion performance. Hence, to meet the
new requirements of forthcoming applications, new materials and transistor structures are
needed to fill this gap.
• Using compound semiconductor materials, a new generation of electronic devices can be
unleashed that combine the capability to handle higher powers with lower switching loss and
higher operating frequencies, that could boost the efficiency of power inverters, while trimming
their size and weight.
• Benefits that would follow include better power supplies for computers and more efficient
power conversion in solar converters and hybrid electrical vehicles.
• Silicon MOSFETs have now approached a performance plateau, while cost of advancements
has increased dramatically. Concurrently, next generation and emerging applications are
demanding further substantial leaps in power conversion performance. Hence, to meet the
new requirements of forthcoming applications, new materials and transistor structures are
needed to fill this gap.
• Using compound semiconductor materials, a new generation of electronic devices can be
unleashed that combine the capability to handle higher powers with lower switching loss and
higher operating frequencies, that could boost the efficiency of power inverters, while trimming
their size and weight.
• Benefits that would follow include better power supplies for computers and more efficient
power conversion in solar converters and hybrid electrical vehicles.
OverviewOverview
Silicon
Carbide
27
power conversion in solar converters and hybrid electrical vehicles.power conversion in solar converters and hybrid electrical vehicles.
• Although, silicon carbide (SiC) FETs have emerged on the scene in the past 10 years to
address these issues, they suffer from significant cost premiums due to limited quality
material supply, as well as the intrinsic cost structure of the material.
• Structurally, bulk gallium nitride (GaN) substrates have been prohibitively high-priced,
requiring the use of hetero-epitaxial films. However, major substrates used for GaN epitaxy
until now, such as SiC or sapphire, have also been relatively expensive.
• Gallium arsenide (GaAs) can operate at higher power levels than the equivalent silicon device
thanks to a higher breakdown voltages. However, high power operation is limited due to the
poor thermal conductivity of the material. Overall, GaAs offers a good balance of properties
for a wide range of RF applications.
• Although, silicon carbide (SiC) FETs have emerged on the scene in the past 10 years to
address these issues, they suffer from significant cost premiums due to limited quality
material supply, as well as the intrinsic cost structure of the material.
• Structurally, bulk gallium nitride (GaN) substrates have been prohibitively high-priced,
requiring the use of hetero-epitaxial films. However, major substrates used for GaN epitaxy
until now, such as SiC or sapphire, have also been relatively expensive.
• Gallium arsenide (GaAs) can operate at higher power levels than the equivalent silicon device
thanks to a higher breakdown voltages. However, high power operation is limited due to the
poor thermal conductivity of the material. Overall, GaAs offers a good balance of properties
for a wide range of RF applications.
TrendsTrends
Gallium
Nitride
Gallium Gallium
ArsenideArsenide
Compound Compound Semiconductor Semiconductor
MaterialsMaterials
Stakeholders and Development EffortsSilicon Carbide
SiC Application Markets
Military and Defense
IT and consumer sectors
Transportation Including Civil
Aviation
Automotive
Industrial Applications
Healthcare and Medicine
Motor
Cree Inc., NC
Stakeholders
Semisouth Laboratories
GeneSiC Semiconductor United Silicon Carbide
Rohm Arkansas Power
Electronics International
TranSiC, Sweden acquired
by Fairchild
Semiconductor
Shindengen Electric
Manufacturing Co., Ltd.
28
DrivesClean Technology
• SiC Electronics adoption in industry is dependent on developing a reliable MOSFET that can challenge IGBTs.• Thyristors in the high-voltage range are expected to address power utility applications.• Mass volume applications, such as electric vehicles could be three to four years before commercialization.• Small companies, such as GeneSiC, SemiSouth, and United Silicon Carbide all have embarked on developing SiC-based
JFETS and BJTs that will probably be commercialized in a couple of years.• Large tier companies have realized the potential of SiC-based devices and have also started developing products on their own,
notable are Mitsubishi Electric, ABB, and so on.• Until recently, only SiC-based diodes were available commercially while the other SiC-based devices, such as MOSFETS,
JFET, BJTS were in research stages. This changed with Cree Inc., and also Rohm Semiconductors announcing that they havestarted supplying samples of SiC MOSFETS developed by them to customers.
Trends
International
Rectifier
Stakeholders
EPC Corporation
GaN Systems Inc. MicroGaN GmbH
Transphorm, Inc. EpiGaN, Hasselt
Photovoltaic Inverter
RF Electronics; Broadband
Applications
High Power Electronics
CATV/VSAT
LED
Automotive
UPS
Motor Control
BeMiTec AG Nitek Inc.
Applications
Stakeholders and Development EffortsGallium Nitride
29
• A diverse range of companies have been striving to bring the high temperature and voltage operation,switching frequency and efficiency GaN promises to the power electronics market.
• SiC’s use in motor control applications by companies like Mitsubishi will also pave the way for GaN, if it offersthe same performance at a lower cost.
• GaN power electronics past, present and future business is inseparable to the LED industry. Today, theextensive developments of GaN-on-Si epiwafers fertilized both the LED and the power industry. Most of theepiwafer vendors are targeting these two segments with dedicated products and offers.
• International Rectifier and EPC Corp are furthest ahead in the qualification stakes, as both have commercialGaN products available today. However, as they have not yet achieved full approval, sales are still relativelylow for now.
Trends
Stakeholders and Development EffortsGallium Arsenide
Stakeholders
Skyworks Solutions RF Micro Devices
TriQuint Semiconductor Avago Technologies
WIN Semiconductors Microsemi Corporation
Renesas Electronics Sumitomo ElectricAutomotive
GaAs
Application
Markets
Radio
Frequency
ICsSatellite
Cellular
GPS
VSAT
Point to
Point Radio
Military and
Aerospace
30
• RF GaAs devices are a key component in many handsets, including smartphones. They are also used foramplification in Wi-Fi networks and will soon enable communication between one machine and another.The market for the GaAs chips used in these established and emerging applications is fairly buoyant.
• The most important driver of the GaAs RF IC market is the handset segment.
• Recently, the development of new GaAs based devices is enlarging the market with associated highvolume applications -- LEDs represent such devices.
Activities
Renesas Electronics Sumitomo ElectricAutomotive
Radar
Want to Learn More About The Current Situation and Development Perspectives of Microelectronics in Russia?
31
New in 2013: SEMICON Russia is Supported by:
With the support of:
Department of RadioElectronics of
the Ministry of
With the participation of: Supported by:
32
MOSCOW CITY GOVERMENT
Represented by the Department of Science, Industrial
Policy and Entrepreneurship
the Ministry of Industry and Trade
of the Russian Federation
Exhibition Profile
SEMICON Russia is the most established event for the Semiconductor and PV Manufacturing Industry in Russia
• 2700+ professional attendees in 2012• (35% increase over 2011)
• 30+ countries represented
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• 69% of attendees are from the Russian Federation
• 63% represent management level
• 100 exhibiting companies
Read more in the SEMICON 2012 post show report http://www.semiconrussia.org/en/AboutInformation/PostShowReports
Programs and Events in 2013
� Microelectronics Market Conference� Innovative technology and advanced manufacturing to support the Russian Industry’s growth and competitiveness.
� Presentation of Frost & Sullivan comprehensive research dedicated to Russian microelectronics market
� TechARENA I & II� Presentation stage on the show floor
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� Presentation stage on the show floor� Free access for all registered visitors
