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NANO III
Chapter:
Micro- and nano-fabrication
Michel CalameInstitut fr Physik, Klingelbergstrasse 82, 4056 Basel
room: 1.20, 1st flooremail: michel.calame@un ibas.ch
MC, Nano III, 24.04.04, 1
Outline Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 2
mailto:[email protected]:[email protected]:[email protected]7/31/2019 Microfabrication I MC
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References
overview books
1. Introduction to Semiconductor Manufacturing Technology
H. Xiao, Prentice-Hall,2001.
2. Fundamentals of Microfabrication: The Science of Miniaturization
M. Madou, 2nd ed., CRC Press, 20023. Nanoelectronics and Information Technology
R. Waser ed., Wiley-VCH, 20034. VLSI Technology (more physical)
SM. Sze, 2nd ed., McGraw-Hill, 1988
many web sites, e.g. www .memsnet.org/glossarysee also companies web sites: Intel, Infineon, IBM, AMD,
MC, Nano III, 24.04.04, 3
Introduction
1947, 23th December
John Bardeen, Walter Brattain,William Schockley
ATT Bell Labs
first point contact
transfer resistor
reconstitution:
Aylesworth
http://www.pbs.org/transistor/MC, Nano III, 24.04.04, 4
http://www.memsnet.org/glossaryhttp://www.memsnet.org/glossaryhttp://www.pbs.org/transistor/http://www.memsnet.org/glossaryhttp://www.pbs.org/transistor/7/31/2019 Microfabrication I MC
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Introduction
1958
Jack Kilby, Texas Instruments
first IC (Integrated Circuit)
C. Esser, InfineonMC, Nano III, 24.04.04, 5
Introduction
1961, Robert Noyce,
Fairchild Camera
first integratedcircuit available as a
monolithic chip
Planar technology
(Si substrate and Allines)
C. Esser, Infineon
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Introduction
1971 Intel anounces the i4004 microprocessor
"a new era of integrated electronics"2250 transistors, 10m technology, 108kHz
http://www.intel.c o mMC, Nano III, 24.04.04, 7
Introduction
1981
Intel i8088
29000 transistors,3m technology, 8MHz
invention of the PC
(personal computer)IBM, A.Child, B.Gates
http://www.intel.c o m
http://www.intel.com/http://www.intel.com/http://www.intel.com/http://www.intel.com/7/31/2019 Microfabrication I MC
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Introduction
1965, Gordon E. Moore
(co-founder Intel Corporation)
Prediction 1975:
from 1980 on circuit densityor capacity of semiconductordevices will double every twoyears instead of one year
Electronics, Vol. 38(8)
The complexity for minimum
component costs has increased at a rateof roughly a factor of two per year.
Certainly over the short this rate can be
expected to continue, if not increase.
Over the longer term, the rate ofincrease
is a bit more uncertain, although there is
no reason to believe it will not remain
nearly constant for at least 10 years.
http://www.pbs.org/transistor/ MC, Nano III, 24.04.04, 9
Introduction
http://www.pbs.org/transistor/http://www.pbs.org/transistor/7/31/2019 Microfabrication I MC
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http://www.intel.c o mMC, Nano III, 24.04.04, 10
http://www.intel.com/http://www.intel.com/7/31/2019 Microfabrication I MC
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Introduction
I think there is a world market for
maybe five computers.
There is no reason for any
individual to have a computer in
their home.
640K ought to be enough for
anybody.
Thomas Watson,
Chairman of IBM, 1943
Ken Olson,
President, Chairman and Founder of
Digital Equipment Corp., 1977
Bill Gates, Microsoft founder, 1981
(though today he denies he said it)
MC, Nano III, 24.04.04, 11
Introduction
1958 1 transistor = 10 US$;first integrated circuit with 4 transistors: 150 US$market 218106 US$
2000 for 10 US$, you receive 50106 transistors (with passivecomponents, interconnects, ...)
market 150109 US$
unprecedented in industry's history
MC, Nano III, 24.04.04, 12
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IIIIIIIIIII
Introduction
state-of-the-arttoday
MC, Nano III, 24.04.04, 13
Introduction
going really nano, i.e.
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Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
(
condensed matter course) Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 15
Semiconductors physics reminder
Energy gaps
Si ~ 1.12 eV Ge~ 0.66 eV GaAs~ 1.43 eV
NB: kT (RT) ~25meV
MC, Nano III, 24.04.04, 16
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Semiconductors physics reminder
Si atomsintrinsic
As doped Sin-typeother donors:P, Sb
Ga doped Sip-typeother acceptors:B, Al
e.g.: resistivity changes by > 6 orders of mag.with a 1ppm B doping
MC, Nano III, 24.04.04, 17
Semiconductors physics reminder
Basic (active) element of ICs
FET (field-effect transistor)voltage applied to capacitively coupled electrode (GATE) creates anelectric field altering the nb of charge carriers in a semiconductor,thus modulating its conductivity (transfer resistor)
technologies for gate electrode pn-junction (junction FET or J-FET) Schottky barrier (metal-silicon FET or MESFET) insulated gate FET, like metal-oxide-semiconductor MOSFET
bipolar transistor: npn (or pnp), not capacitive
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Semiconductors physics reminder
pn-junction Currentvs voltage: diode behavior
depletion region shrinks
Reverse biased
applied voltage enhances
the internal potential
difference
Forward biased
applied voltage opposed to
internal potential difference
breakdown
Ref. 3MC, Nano III, 24.04.04, 19
Semiconductors physics reminder
npn-transistor2 diodes back-to-back
n-type
p-type
n-type
Ref. 3
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1111111111111111111111111111111111111111111111111111111111111111111
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Semiconductors physics reminder
MESFET technology
Structure and signconvention of a metal-semiconductor
junction
metal-semiconductor junction: barrier for electrons and holes
if the Fermi energy of the metal is somewhere between theconduction and valence band edge
Course Van ZeghbroeckMC, Nano III, 24.04.04, 21
Semiconductors physics reminderEnergy band diagram of the metal and the semiconductor
before contact after contact
thermal equilibrium(Fermi levels adjusted)
Course Van Zeghbroeck
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22222222222Semiconductors physics reminder
Workfunction of selected metals and their measured barrierheight (eV) on germanium, silicon and gallium arsenide.
Course Van ZeghbroeckMC, Nano III, 24.04.04, 23
Semiconductors physics reminder
MOSFET technology: MOS capacitor energy band diagramAl/SiO2/p-Si
Metal (gate) : Al (Mo, W, Cu), Poly-SiOxide : SiO2, d 1.7-10 nmSemiconductor : p- or n-type silicondoping 1013 - 1018 cm-3orientation typ.
Ref. 3
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Semiconductors physics reminder
MOS capacitor
p-type semiconductor
B. Fste, InfineonMC, Nano III, 24.04.04, 27
Semiconductors physics reminder
MOS capacitor
B. Fste, Infineon
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Semiconductors physics reminder
MOS capacitor
B. Fste, InfineonMC, Nano III, 24.04.04, 29
Semiconductors physics reminder
MOS capacitor
B. Fste, Infineon
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Semiconductors physics reminder
MOS capacitor
B. Fste, InfineonMC, Nano III, 24.04.04, 31
Semiconductors physics reminder
MOS capacitor
B. Fste, Infineon
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Semiconductors physics reminder
MOSFET
B. Fste, Infineon MC, Nano III, 24.04.04, 33
Semiconductors physics reminder
B. Fste, Infineon
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Semiconductors physics reminder
MOSFET (n-channel)
depletion type(on by default)
Vg=0 Vg0
enhancement type(off by default)
B. Fste, InfineonMC, Nano III, 24.04.04, 35
Semiconductors physics reminder
n-channel (NMOS)(charge carriers:electrons)
p-channel (PMOS)(charge carriers:holes)
Ref. 1
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Semiconductors physics reminder
Refs. 1 & 3 MC, Nano III, 24.04.04, 37
Semiconductors physics reminder
CMOS: complementary MOS, todays most common technology
n-channel MOS device in series with p-channel MOS device(when NMOS on, PMOS off and vice-vers, hence complementary )
simple design draws very little current (except when switched) low-power technology
basic logic gate: inverter Vin high (1): NMOS on, PMOS off,
Vout=Vss (low, 0) Vin low (0): NMOS off, PMOS on,
Vout=Vdd (high, 1)
B. Fste, Infineon
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Semiconductors physics reminder
CMOS: state-of-the-art
SOI substrate, Cu/low-k interconnection,5 metal layers, features
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Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 41
IC fabrication
example of (simple) CMOS process sequence
H. Xiao, Ref.1MC, Nano III, 24.04.04, 42
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IC fabrication
H. Xiao, Ref.1MC, Nano III, 24.04.04, 43
IC fabrication
Ref. 3
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444444444444444
e.g.: wire bonding, packaging
NB: flip-chip packaging
H. Xiao,Ref.1 MC, Nano III, 24.04.04, 45
Outline Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms Silicon: from sand to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 46
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Clean room
importance of yield in industrial processes clean rooms
limit contaminants
(air, people, facility, equipment, process (gas, chemicals, ...), staticcharges, .)
special furniture and tools (paper, pens, ...)
MC, Nano III, 24.04.04, 47
Clean room
clean room classes
class 1less than 1 particle ofdiameter larger than0.5m in a cubic foot
clean house,
typ. > 500000particles per cubicfoot
(Federal Standard 209E)
H. Xiao, Ref.1
MC, Nano III, 24.04.04,48
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Clean room
clean room design
H. Xiao, Ref.1MC, Nano III, 24.04.04, 49
Clean room
simpler clean room design
H. Xiao, Ref.1
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Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 51
Silicon: from sand to wafer
14 +IV(+II)
SiSilicon
[Ne]3s23p2
28.085g/mol
1410C 2.33kg/m3
2nd (after oxygen) most abundant in earths crusts: 26%
7th most abundant element in universe
MC, Nano III, 24.04.04, 52
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Silicon: from sand to wafer
Si: nonmetallic element, indirectsemiconductor
SiO2 glass (amorphous),
quartz (cristalline)SiC very hard (polishing)Si crystalline (semiconductor
industry)typical resistivity: 100 mcm
structure: cfc (diamond-like)
C. Heedt, WackerSiltronic
MC, Nano III, 24.04.04, 53
Silicon: from sand to wafer
advantadges of Si over othersemiconductors (Ge)
cheap, abundant
oxide (SiO2) strong and stable
dielectric; grown easily bythermal oxidation
larger band gap (1.1 eV): higheroperation T larger breakdown voltage
Doping elements n-type: P (phophorus), As
(arsenic), Sb (antimony) p-type: B (boron)
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Silicon: from sand to wafer
Si purification: natural Si oxide MGS EGS
C. Heedt, WackerSiltronicMC, Nano III, 24.04.04, 55
Silicon: from sand to wafer
Si purification: MGS EGS
C. Heedt, WackerSiltronic
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Silicon: from sand to wafer
EGS single cristal ingot: CZ growth (Czochralski method)
C. Heedt, WackerSiltronicMC, Nano III, 24.04.04, 57
Silicon: from sand to wafer
Si ingot
up to 300mm diameter (FZ or floating zone purer butlimited to 200mm)
C. Heedt, WackerSiltronic MC, Nano III, 24.04.04, 58
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Silicon: from sand to wafer
Surface grindingmark crist. orient.
flat: up to 150mm
notch: > 200mm
C. Heedt, WackerSiltronicMC, Nano III, 24.04.04, 59
Silicon: from sand to wafer
wafer sawing
edge rounding
C. Heedt, WackerSiltronic
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Silicon: from sand to wafer
wafer finishing
lapping
(global planarization,double-sided)
wet etching , isotropic(4:1:3 mixture of HNO3,HFand CH3COOH)
CMP (chemical mechanicalpolishing)
wet cleaning (RCA1, RCA2)
surface roughness after the various treatment
Ref. 1MC, Nano III, 24.04.04, 61
Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
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Fabrication: material deposition techniques
Physical processes
Physical Vapor Deposition (PVD):
thermal evaporation
molecular beam epitaxy (MBE)pulsed laser deposition (PLD)
sputtering
Casting
Chemical processes
Chemical Vapor Deposition (CVD)
Electrodeposition
Langmuir-Blodgett films (LB)
MC, Nano III, 24.04.04, 63
Fabrication: physical deposition techniques
film deposition basics:
gas kinetics
(mean free path: small holes filling, residual gas atoms: purity)
UHV (p
7/31/2019 Microfabrication I MC
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Fabrication: physical deposition techniques
thin film growth mechanisms: heteroepitaxy
(lattice match and surface energy differences)
Volmer-Weber(island growth):
Frank-Van der Merwe(layer growth; ideal epitaxy)
Stranski-Krastanov
(layers + islands)
MC, Nano III, 24.04.04, 65
Fabrication: physical deposition techniques
thermal evaporation
resistanceheatedevaporation
sources
MC, Nano III, 24.04.04, 66
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Fabrication: physical deposition techniques
thermal evaporation
e-beam evaporation effusion (Knudsen) cell
MC, Nano III, 24.04.04, 67
Fabrication: physical deposition techniques
Molecular Beam Epitaxy (MBE)
Ref. 3 & J.Faist MC, Nano III, 24.04.04, 68
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66666666666666
Fabrication: physical deposition techniques
Molecular Beam Epitaxy (MBE)
TEM pictures of a QCLGaAs/AlGaAs structure(J. Faist, Neuchtel)
J.Faist, UniNeuchtel MC, Nano III, 24.04.04, 69
Fabrication: physical deposition techniques
Pulsed Laser Deposition, laser ablation process (PLD)
MC, Nano III, 24.04.04, 70
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Fabrication: physical deposition techniques
DC sputtering
few 100V plasma
p~10-1
- 10-3
mbar
sputtering of target byions (typ. Ar)
stoichiometry of target(~) preserved
increase ionization rate ofplasma with B-field:magnetron sputtering
insulating targets: RF-sputtering
MC, Nano III, 24.04.04, 71
Fabrication: physical deposition techniques
Casting (spinning)
(typ. polymers, e.g. photoresists, polyimide)
MC, Nano III, 24.04.04, 72
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poly Si SiH4 Si + 2 H2 580-650C, 1mbarSiO2 3 SiH4 +O2 SiO2 + 2 H2 450C44444444444444444
Fabrication: material deposition techniques
Physical processes
Physical Vapor Deposition (PVD):
thermal evaporation
molecular beam epitaxy (MBE)pulsed laser deposition (PLD)
sputtering
Casting
Chemical processes
Chemical Vapor Deposition (CVD)
Electrodeposition
Langmuir-Blodgett films (LB)
MC, Nano III, 24.04.04, 73
Fabrication: chemical deposition techniques
CVD: multiple wafer reactor
e.g.: deposition of
PECVD: plasma enhanced CVD, allows temperature reductionMOCVD: metal-organic CVD, use organometallic precursors(NB: thermal oxidation)
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Fabrication: chemical deposition techniques
CVD example: carbon nanotubes growth
(CH4, C
2H
4, C
2H
2...)
MC, Nano III, 24.04.04, 75
CVD example: CNTs
hydrcarbon gases: C2H2 (acetylene), C2H4 (ethylene), CH4(methane) (+ )
carrier gases: H2, Artemperature: 600-1000Ccatalyst: Fe (Ni, Co)
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MC, Nano III, 24.04.04, 77777777777777777
1m
SWNTsFe, ethylene, 900C-1000Csee e.g.: Dai et al. and Hafneret al.
~2nm
lithographically patterned Fe film, acetylene, 600C-700C
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Length(m)
Length(m)
Length(m)
length of tubes vs time, flowand thickness
SEM image perp. to SiO2/Sisurface
120
100
80
60
40
20
0
120
0 5 10 15
Growth Time [min]
100
80
60
0 5 10 15 20
120
100
80
60
40
20
C H Flow [sccm]2 2
Z. Liu et al., 20020 5 10 15 20
Fe thickness [nm]
MC, Nano III, 24.04.04, 79
Fabrication: chemical deposition techniques
Electrodeposition (electroplating)
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Fabrication: chemical deposition techniques
Langmuir-Blodgett (LB) technique
MC, Nano III, 24.04.04, 81
Outline Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from sand to wafer material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
MC, Nano III, 24.04.04, 82
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Different types of lithography
radiation source
DLWillumination control system
resist coated sample
Ref. 3 MC, Nano III, 24.04.04, 83
Optical lithography
source wavelengths:optical: > 450nmUV: 365nm-435nm
DUV: 157nm-250nmEUV: 11nm-14nmx-ray: < 10nm
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Ref. 3 MC, Nano III, 24.04.04, 84
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Optical lithography
contact
masking methodsproximity projection
MFS=(d.)1/2 poorer resolution
MFS ~ [(d.+g)]1/2
better resolution(diffrac. limited, adj.
Rayleigh crit.)reduction possible
mask suffers (decreases errors)stepper (multiple exp.)
Ref. 3 MC, Nano III, 24.04.04, 85
Optical lithography
phase-shifting technique
MC, Nano III, 24.04.04, 86
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Optical lithography
photoresists
positivemade soluble upon exposure(chain scission)e.g. PMMA (DUV, e-beam), DQN
negativeinitiates cross-linking of side chainsor polymerization of mono-
/oligomeric speciese.g. maN400
Ref. 3 MC, Nano III, 24.04.04, 87
Optical lithography
MC, Nano III, 24.04.04, 88
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Optical lithography
MC, Nano III, 24.04.04, 89
Optical lithography
MC, Nano III, 24.04.04, 90
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Optical lithography
photoresistsprofiles
Ref. 2 MC, Nano III, 24.04.04, 91
Optical lithography
some important points
resist baking: soft-bake, PEB, hard bake(NB: Tg polymer)
adhesion layer (HMDS)
development times/temperatures fresh products
DOF (depth of focus) DOF /(NA)2
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electron beam lithography (EBL)
precise (energy, dose)relatively slow(industrial application: parallel beams)resolution limit ~ 10nm (50nm)
no masklarge DOF
large scattering of electrons
Refs. 1 & 3 MC, Nano III, 24.04.04, 95
Emerging lithography technologies
STM lithography: low energy e- (
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Ref. 2 MC, Nano III, 24.04.04, 96
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soft lithography: microcontact printing (MCP)
PDMS,e.g Sylgard 184,DOW Corning
B. Michel et al., Advanced Semiconductor Lithography, 2001 MC, Nano III, 24.04.04, 97
soft lithography: microcontact printing (MCP)
B. Michel et al., Advanced Semiconductor Lithography, 2001
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soft lithography: microcontact printing (MCP)
master
first used to print alkanethiols on
gold surfaces
quick and cheap method toperform simple assays (e.g.:immunoassay: crossed stampedlines)
stamp
printed and etched pattern
B. Michel et al., Advanced Semiconductor Lithography, 2001 MC, Nano III, 24.04.04, 99
Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview clean-rooms
Silicon: from powder to wafer
material deposition techniques
lithography etching
examples of devices: MEMS, NEMS
Outlook: new and future techniques
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Fabrication: etching
Chemical: wet etching (can be anisotropic due to crystal-face selectivity)
Physical etching (sputtering) ion milling, FIB (focused ion beam) dry etching (plasma assisted techniques, pressures up to 10mbar)
(more a combination of physical and chemical material removal)
key points: etch rates, selectivity
also CMP: chemical mechanical polishing to achieve global planarizationcombine mechanical abrasion with chemical etchingkey parameters: force, slurry type, pad velocity
MC, Nano III, 24.04.04, 101
Fabrication: wet etching
use chemical solutions to dissolvematerial
3 steps:reactive species to surface/ etchproducts / rinse, dry
isotropic
anisotropic
http://www.memsguide.comMC, Nano III, 24.04.04, 102
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Fabrication: wet etching
SiO2 6:1 buffered in NH4F or 10:1 and 100:1 HF in H2O(NB: 1:1 HF (49% HF in H2O) too fast)
SiO2 + 6 HF H2SiF6 + 2 H2O (H2SiF6 soluble in H2O)
Si polycrystalline or single-crystalisotropic: mix of HNO
3and HF
(cyclic process: HNO3 oxidizes Si, HF removes oxide)
Si + HNO3 + 6 HF H2SiF6 + HNO2 + H2O + H2
anisotropic (cystalline Si): (100) rate / (111) rate ~ 100 at 80C
KOH 23.4% wt, C3H8O 13.3% wt (isopropyl alcohol), H2O 63.3% wtyields V-shaped groove
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Fabrication: wet etching
Si3N
4H
3PO
491.5% concentration at 180C (etch rate ~ 100/min)
Si3N
4+ 4 H
3PO
4 Si3(PO4)4 + 4 NH3
silicon phosphate (Si3(PO4)4) and amonia (NH3) are water soluble
selectivity tothermally grown SiO
2> 10:1
Si > 33:1
metals Al mix of acids (phosphoric, acetic, nitric) and waterTi mix of sulfuric acid and hydrogen peroxide
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Fabrication: dry etching
RIE: reactive ion etchingboth physical and chemical
http://www.memsguide.com MC, Nano III, 24.04.04, 105
Fabrication: dry etching
DRIE (key process for MEMS)
ICP RIE
SF6
alternated with C4F
8(to
passivate walls), Bosch process
selectivitySi:SiO2, 150:1profile angle +/- 1
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Outline
Introduction:
overview, state of the art,
semiconductor physics reminder
Fabrication basics
IC fabrication overview
clean-rooms
Silicon: from powder to wafer
material deposition techniques
lithography etching
examples of devices
Outlook: new and future techniques
MC, Nano III, 24.04.04, 107
MEMS/NEMS and devices
from MEMS (micro-electromechanical systems)
e.g. Si gears for watch industry: lower friction and inertia
CSEM & Ulysse-NardinMC, Nano III, 24.04.04, 108
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(((((((((((((((
MEMS/NEMS and devices
electrostatic micromotorfabricated from silicon
individual mechanicalmicromirrors part of a Texas
Instruments Digital LightProcessor (MOEMS)
Physics World, Feb. 2001MC, Nano III, 24.04.04, 109
MEMS/NEMS and devices
fabrication process reminder
structural layer sacrificial layer substrate
Physics World, Feb. 2001 MC, Nano III, 24.04.04, 110
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MEMS/NEMS and devices
ion-selective electrode array platform for in-vitro intracellular recording
O. Guenat,et al., Microfabrication and characterization of
an ion-selective microelectrode array platform, Sensors &Actuators, B, 2003.
MC, Nano III, 24.04.04, 111
MEMS/NEMS and devices
down to NEMS
masses in 10-15g to 10-18 g range (L3) resonators above 10GHz (1/L)
(f ~ (spring cst/eff. mass)1/2, spring constant L) very low power: 10-18W threshold (thermal fluc. at 300K) low dissipation, high Q factor: sensitive to damping sensors
(sensitivity potentially reaching quantum limit)
NB: 10x10x100 nm Si beam contains ~ 5 x 105 atoms,among which ~3 x 104 reside at the surface(i.e.: > 10% of the constituents are surface or near-surface atoms)
Physics World, Feb. 2001MC, Nano III, 24.04.04, 112
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MEMS/NEMS and devices
nano-tweezers:electrostatic actuation
actuation amplitudedown to 6 pm (rms)/ sqrt(Hz)
Ch. Meyer, H. Lorenz, and K. Karrai, "Optical detection of quasi-static actuation ofnanoelectromechanical systems" Appl. Phys. Lett. 83, 2420 (2003).
MC, Nano III, 24.04.04, 113
MEMS/NEMS and devices
Nanomechanical Electron Transport:quantum-bell: max current at f
drive~ resonance freq.
avg nb of e- shuttled per cycle
A Erbe, Ch Weiss, W Zwerger, and R H Blick, Phys. Rev. Lett. 87, 096106 (2001)M Jonson and R Shekhter, Phys. World 16, 21 (2003).
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Integration: hybrid devices
Tech. Roadmap for Nanoelectronics, IST program, European Commission MC, Nano III, 24.04.04, 115
END
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Sources and ressources
Books
Introduction to Semiconductor Manufacturing Technology
H. Xiao, Prentice-Hall, 2001.
Fundamentals of Microfabrication: The Science of Miniaturization
M. Madou, 2nd ed., CRC Press, 2002
Nanoelectronics and Information TechnologyR. Waser ed., Wiley-VCH, 2003
VLSI Technology (more physical)
SM. Sze, 2nd ed., McGraw-Hill, 1988
cd-rom: 4th Dresdner Sommerschule Mikroelektonik, 2003. www.sommersch ule-mikroelektr o nik.d eDVD: EPFL CMI
web sites
www. memsnet.org; w ww.biom em s.net
http://mmadou.eng.uci.edu/LivingBook/webterlist.htm
Semiconductor physics
http://ece-www.colorado.edu/~bart/book/contents.htm
www.techlearner.com/semiconductors.htm
web sites from companies: Intel, Infineon, IBM
MC, Nano III, 24.04.04, 117
Silicon: from sand to wafer
MC, Nano III, 24.04.04, 118
http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.sommerschule-mikroelektronik.de/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.memsnet.org/http://www.biomems.net/http://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.techlearner.com/semiconductors.htmhttp://www.sommerschule-mikroelektronik.de/http://www.memsnet.org/http://www.biomems.net/http://mmadou.eng.uci.edu/LivingBook/webterlist.htmhttp://ece-www.colorado.edu/~bart/book/contents.htmhttp://www.techlearner.com/semiconductors.htm7/31/2019 Microfabrication I MC
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Introduction
The Lives and Death of Moore's Law by Ilkka Tuomi
First Monday, volume 7, number 11 (November 2002),
URL: http://firstmonday.org/issues/issue7_11/tuomi/index.html
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http://www.vcs.ethz.ch/chemglobe http://chemlab.pc.maricopa.edu / p eriodic
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