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11/9/2015 1 06.11.15 10:15-12:00 Introduction - SPM methods 13.11.15 10:15-12:00 STM 20.11.15 10:15-12:00 STS 27.11.15 10:15-12:00 Novel SPM techniques 04.12.15 10:15-12:00 2-dimensional crystallography, LEED, AES Erik Zupanič [email protected] stm.ijs.si Microscopical and Microanalytical Methods (NANO3 ) Outline Introduction to SPM methods - surfaces and interfaces - methods for surface analysis - scanning probe microscopy Scanning tunneling microscopy (STM) - electron tunneling - imaging and manipulation - experimental set-up, tip and sample preparation Scanning tunneling spectroscopy (STS) - theory - spectroscopy techniques: I / d, V / d, I / V, IETS Novel SPM techniques 2-dimensional crystalography, LEED, AES
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Page 1: Microscopical and Microanalytical Methods (NANO3)stm.ijs.si/files/MPS/mps_mm_lectures_2015_-_pt1.pdf · Dimension Structural element 0 point defects: adatoms, vacancies, amorphous

11/9/2015

1

06.11.15 10:15-12:00 Introduction - SPM methods

13.11.15 10:15-12:00 STM

20.11.15 10:15-12:00 STS

27.11.15 10:15-12:00 Novel SPM techniques

04.12.15 10:15-12:00 2-dimensional crystallography, LEED, AES

Erik Zupanič

[email protected]

stm.ijs.si

Microscopical and

Microanalytical Methods

(NANO3)

Outline

Introduction to SPM methods

- surfaces and interfaces

- methods for surface analysis

- scanning probe microscopy

Scanning tunneling microscopy (STM)

- electron tunneling

- imaging and manipulation

- experimental set-up, tip and sample preparation

Scanning tunneling spectroscopy (STS)

- theory

- spectroscopy techniques: I / d, V / d, I / V, IETS

Novel SPM techniques

2-dimensional crystalography, LEED, AES

Page 2: Microscopical and Microanalytical Methods (NANO3)stm.ijs.si/files/MPS/mps_mm_lectures_2015_-_pt1.pdf · Dimension Structural element 0 point defects: adatoms, vacancies, amorphous

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books:

M.C.Desjonquères and D. Spanjaard, Concepts in Surface Physics, Springer Verlag, Berlin 1996 (english)

M. Henzler und W. Göpel, Oberflächenphysik des Festkörpers, Teubner Studienbücher Physik, Stittgart 1991 (Deutsch)

H. Lüth, Surfaces and Interfaces in Solids, Springer, Berlin 1993 (english)

L. C. Feldman and J. W. Mayer, Fundamentals of Surface and Thin Film Analysis, North-Holland, Amsterdam 1986 (english)

V. Marinković, Mejne površine, Naravoslovnotehniška fakulteta, Univerz v Ljubljani, Oddelek za materiale in metalurgijo, Ljubljana 1999 (slovensko)

tutorial links:

http://en.wikipedia.org/wiki/Wiki

http://uksaf.org/tech/

http://www.chem.qmw.ac.uk/surfaces/#teach

http://venables.asu.edu/grad/lectures.html

http://www.chembio.uoguelph.ca/educmat/chm729/tutorial.htm

links to some related topics:

http://spm.phy.bris.ac.uk/techniques/(SPM)

http://www.chem.qmw.ac.uk/surfaces/scc/scat6_2.htm (LEED)

http://www.physics.rutgers.edu/lsm/updated/techn.html (experimental techniques)

http://vacuumtunes.co.uk/vtut1.html (UHV)

Literature

From: Office of Basic Energy Sciences, US Department of Energy (http://www.er.doe.gov/bes/scale_of_things.html)

Introduction

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Questions: - crystal structure and composition

- electronic structure

- relation structure – propertis

Bulk material ≠ surfaces

Introduction

Surfaces and interfaces

Surface is defined as a few topmost atomic layers of the material, which is in contact with its surrounding (vacuum, air, other material...).

An interface is the boundary between two phases.

Large objects: - small surface-to-volume ratio A:V

- physical and chemical properties primarily defined by the bulk

Small objects: - large surface-to-volume ratio A:V

- properties strongly influenced by the surface

Example: sphere (nanoparticles)

V=4/3 π r3 , A=4 π r2

A/V = 3/r

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Surfaces and interfaces

Comparison of Ag crystal surfaces with different orientations:

Ag, fcc (100)

Ag, fcc (110)

Ag, fcc (111)

Density of atoms Number of broken Surface energy:on surface: bonds:

1.19 ∙ 1019 at/m2 4 bonds γ(100) = 6.78 J/m2

8.41 ∙ 1019 at/m2 5 bonds γ(110) = 5.99 J/m2

6.87 ∙ 1019 at/m2 3 bonds γ(111) = 2.94 J/m2

Surfaces and interfaces

Crystal structure description:

The Bravais lattice are the distinct lattice types which when repeated can fill the whole space.

4 types of unit cell:

P – primitive

I – body centred

F – face centred

C – side centred

7 crystal classes

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Surfaces and interfaces

Crystal lattices at surfaces

14 bravais lattices in 3D are replaced by 5 bravais lattices in 2D!

1-oblique, 2-rectangular, 3-centered rectangular (rhombic), 4-hexagonal, and 5-square

The structure and properties of surfaces differ significantly from that of bulk material!

Why?

... in other words, „Interfaces and surfaces are where the action happens.. “

Surfaces and interfaces

The atoms in surface layers will occupy new equilibrium positions and thusdifferent structure than that of the bulk due to the broken periodicity of the bulkmaterial: the surfaces are eather relaxed or reconstructed.

e.g. Pt (100) surface: cubic to hexagonal

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surface interlayer relaxation in metals:

metal surface relaxation (%)

12 23 34

Al(110) -9 +5 -2

Ag(110) -9.5 +6 -3.5

Cu(110) -8.5 +2.3 -0.9

Fe(211) -10.5 +5.1 -1.7

Surfaces and interfaces

12

23

34

Dimension Structural element

0 point defects: adatoms, vacancies, amorphous coverages, edge atoms

1 atomic steps, domain edges, phase boundaries, domain boundaries

2 superstructures, facets

3 deformed regions in the substrate or a thick film (mosaic structures,

agglomerates, strained regions)

dimensionality of defects:

real surfaces are characterized by terrases, steps and knees:

Surfaces and interfaces

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possible surfaces:

Surfaces and interfaces

different binding places at surfaces:

adsorption is binding of atoms or molecules from the gas phase to the substrate

adsorption energy: the energy released after an atom is immobilized at the surface physisorption characterized by a weak interaction between adsorbate and the surface

Surfaces and interfaces

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List of surface science techniques

Techniques

1 AEAPS Auger Electron Appearance Potential Spectroscopy

2 AES Auger Electron Spectroscopy

3 AFM Atomic Force Microscopy

4 APECS Auger Photoelectron Coincidence Spectroscopy

5 APFIM Atom Probe Field Ion Microscopy

6 APS Appearance Potential Spectroscopy

7 ARPES Angle Resolved Photoelectron Spectroscopy

8 ARUPS Angle Resolved Ultraviolet Photoelectron Spectroscopy

9 ATR Attenuated Total Reflection

10 BEEM Ballistic Electron Emission Microscopy

11 BIS Bremsstrahlung Isochromat Spectroscopy

12 CFM Chemical Force Microscopy

13 CHA Concentric Hemispherical Analyser

14 CMA Cylindrical Mirror Analyser

15 CPD Contact Potential Difference

16 CVD Chemical Vapour Deposition

17 DAFS Diffraction Anomalous Fine Structure

18 DAPS Disappearance Potential Spectroscopy

19 DRIFT Diffuse Reflectance Infra-Red Fourier Transform

20 EAPFS Extended Appearance Potential Fine Structure

21 EDX Energy Dispersive X-ray Analysis

22 EELS Electron Energy Loss Spectroscopy

23 Ellipsometry, see RDS

24 EMS Electron Momentum Spectroscopy

25 EPMA Electron Probe Micro-Analysis

26 ESCA Electron Spectroscopy for Chemical Analysis

27 ESD Electron Stimulated Desorption

28 ESDIAD Electron Stimulated Desorption Ion Angle Distributions

29 EXAFS Extended X-ray Absorption Fine Structure

30 FEM Field Emission Microscopy

31 FIM Field Ion Microscopy

32 FTIR Fourier Transform Infra Red

33 FT RA-IR Fourier Transform Reflectance-Absorbtion Infra Red

34 HAS Helium Atom Scattering

35 HDA Hemispherical Deflection Analyser

36 HEIS High Energy Ion Scattering

37 HREELS High Resolution Electron Energy Loss Spectroscopy

38 IETS Inelastic electron tunneling spectroscopy

39 KRIPES k-Resolved Inverse Photoemission Spectroscopy

40 ILS Ionisation Loss Spectroscopy

41 INS Ion Neutralisation Spectroscopy

42 IPES Inverse Photoemission Spectroscopy

43 IRAS Infra-Red Absorbtion Spectroscopy

44 ISS Ion Scattering Spectroscopy

45 LEED Low Energy Electron Diffraction

46 LEEM Low Energy Electron Microscopy

47 LEIS Low Energy Ion Scattering

48 LFM Lateral Force Microscopy

49 MBE Molecular Beam Epitaxy

50 MBS Molecular Beam Scattering

51 MCXD Magnetic Circular X-ray Dichroism

52 MEIS Medium Energy Ion Scattering

53 MFM Magnetic Force Microscopy

54 MIES Metastable Impact Electron Spectroscopy

55 MIR Multiple Internal Reflection

56 MOCVD Metal Organic Chemical Vapour Deposition

57 MOKE Magneto-Optic Kerr Effect

58 NIXSW Normal Incidence X-ray Standing Wave

59 NEXAFS Near-Edge X-ray Absorption Fine Structure

60 NSOM Near Field Scanning Optical Microscopy

61 PAES Positron annihilation Auger Electron Spectroscopy

62 PECVD Plasma Enhanced Chemical Vapour Deposition

63 PEEM Photo Emission Electron Microscopy

64 Ph.D. Photoelectron Diffraction

65 PIXE Proton Induced X-ray Emission

66 PSD Photon Stimulated Desorption

67 RAIRS Reflection Absorbtion Infra-Red Spectroscopy

68 RAS Reflectance Anisotropy Spectroscopy

69 RBS Rutherford Back Scattering

70 RDS Reflectance Difference Spectroscopy

71 REFLEXAFS Reflection Extended X-ray Absorption Fine Structure

72 RFA Retarding Field Analyser

73 RHEED Reflection High Energy Electron Diffraction

74 RIfS Reflectometric Interference Spectroscopy

75 SAM Scanning Auger Microscopy

76 SEM Scanning Electron Microscopy

77 SEMPA Scanning Electron Microscopy with Polarisation Analysis

78 SERS Surface Enhanced Raman Scattering

79 SEXAFS Surface Extended X-ray Absorption Spectroscopy

80 SHG Second Harmonic Generation

81 SH-MOKE Second Harmonic Magneto-Optic Kerr Effect

82 SIMS Secondary Ion Mass Spectrometry

83 SKS Scanning Kinetic Spectroscopy

84 SMOKE Surface Magneto-Optic Kerr Effect

85 SNMS Sputtered Neutral Mass Spectrometry

86 SNOM Scanning Near Field Optical Microscopy

87 SPIPES Spin Polarised Inverse Photoemission Spectroscopy

88 SPEELS Spin Polarised Electron Energy Loss Spectroscopy

89 SPLEED Spin Polarised Low Energy Electron Diffraction

90 SPM Scanning Probe Microscopy

91 SPR Surface Plasmon Resonance

92 SPUPS Spin Polarised Ultraviolet Photoelectron Spectroscopy

93 SPXPS Spin Polarised X-ray Photoelectron Spectroscopy

94 STM Scanning Tunnelling Microscopy

95 SXAPS Soft X-ray Appearance Potential Spectroscopy

96 SXRD Surface X-ray Diffraction

97 TDS Thermal Desorption Spectroscopy

98 TEAS Thermal Energy Atom Scattering

99 TIRF Total Internal Reflectance Fluorescence

100 TPD Temperature Programmed Desorption

101 TPRS Temperature Programmed Reaction Spectroscopy

102 TXRF Total Reflection X-ray Fluorescence

103 UHV Ultra High Vacuum

104 UPS Ultraviolet Photoemission Spectroscopy

105 XANES X-ray Absorption Near-Edge Structure

106 XPD X-ray Photoelectron Diffraction

107 XPS X-ray Photoemission Spectroscopy

108 XRR X-ray Reflectometry

109 XSW X-ray Standing Wave

http://www.uksaf.org/tech/list.html

Techniques

- Scanning probe microscopy (SPM)

- Scanning tunneling microscopy (STM)

- Atomic force microscopy (AFM)

- Scanning near-field optical microscopy (SNOM)

- Low-energy electron diffraction (LEED)

- Auger electron spectroscopy (AES)

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Techniques

Usually it is easier to obtain information on bulk than on surface properties:

- because of the smaller quantity of atoms,

1 cm2 surface ≈ 1015 atoms

1 cm3 volume ≈ 1023 atoms

- and difficulty of cleaning and keeping surfaces clean.

At ambient pressure each surface atom is hit about 100 000 000 times per second by a gas particle.

(at 10-6 mbar once per second, at 10-9 mbar once per day)

How to clean the sample surface and how to keep the surface clean for the duration of the experiments (minutes, hours or

even days) ? ? ? ?

Ultra-high vacuum

The development of ultra-high vacuum (UHV) techniques opened the possibility to study well defined surfaces of different materials.

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Reaching UHV conditions can be quite challenging and requires:

• use of UHV pumps, i.e. ion pumps, titanium sublimation pumps, cryopumps,

• use of clean UHV compatible materials (low outgassing and low vapor pressure

materials), i.e. metals, special ceramics, glass, teflon,

• use of special seals and gaskets,

• minimization of the surface area,

• avoiding pits of trapped gas - virtual leaks,

• usage of short and high cross-section tubing,

• baking of the UHV system to remove water and other surface contaminants.

Ultra-high vacuum

Final sample preparation has to be done in UHV!

Methods:

- Heating (for samples covered with e.g. oxide, not stable at higher temperatures – this contamination layers are decomposed or evaporate.) Pt, Si

- Reaction with O2 or H2 (if the contamination layer forms a volatile compound with oxygen or hydrogen, it can be removed by extended heating in this atmosphere) hydrocarbons on metals or sulfur on sulfides

- Ion sputtering (top layer of a sample is removed) most used method, followed by annealing

- Cleaving in UHV (fresh sample surface is exposed)

- MBE, PLD or similar growing methods

Ultra-high vacuum

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Scanning probe microscopy

Optical microscopy

- uses visible light (λ=400 – 700 nm)

- resolution around 200 nm (difraction limited)

(Scanning and Transmision) electron microscopy

- uses electron beam (λ=3.7 pm @ 100 keV)

- SEM resolution < 1 nm (size of interaction volume)

- TEM atomic resolution (aberration limited)

Scanning probe microscopy

- uses sharp physical probe that scans the specimen

- atomic resolution possible (STM, AFM, ...)

- real space and real time imaging

Scanning Probe Microscopy (SPM) is a branch of microscopy that forms images of surfaces using a physical probe that scans the specimen.

AFM, atomic force microscopyBEEM, ballistic electron emission microscopyCFM, chemical force microscopyC-AFM, conductive atomic force microscopyEFM, electrostatic force microscopyESTM electrochemical scanning tunneling microscopeFMM, force modulation microscopyKPFM, kelvin probe force microscopyMFM, magnetic force microscopyMRFM, magnetic resonance force microscopySNOM, scanning near-field optical microscopyPFM, Piezoresponse Force MicroscopyPSTM, photon scanning tunneling microscopy PTMS, photothermal microspectroscopy/microscopy SECM, scanning electrochemical microscopySCM, scanning capacitance microscopySGM, scanning gate microscopySICM, scanning ion-conductance microscopySPSM spin polarized scanning tunneling microscopySSRM, scanning spreading resistance microscopySThM, scanning thermal microscopySTM, scanning tunneling microscopySVM, scanning voltage microscopySTP, scanning tunneling potentiometrySHPM, scanning Hall probe microscopySXSTM synchrotron x-ray scanning tunneling microscopy

Scanning probe microscopy

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Scanning near field optical microscopy

conventional (far-field) optical microscopy uses lenses diffraction limits on theresolution due to the lenses used (Abbé’s diffraction barrier): a point is transformedinto an Airy function two points resolved (Rayleigh criterion) theoreticalresolution limit λ/2 cannot be overcome without switching to radically newtechniques, i.e. near field optics

near field optics resolution beyondAbbé’s criterion: illumination through asub-wavelength sized aperture & spacimenwithin the near-field regime (i.e. within ½of the diameter of the hole) to the source

The effect: Light cannot diffract before itinteracts with the sample and theresolution is determined by the diameter ofthe apperture.

Scanning near field optical microscopy

Depending upon the sample being imaged, there are multiple modes of operation:

Transmission: Light source travels through the probe aperture, and transmits through sample.Requires a transparent sample.

Reflection: Light source travels through the probe aperture, and reflects from the surface. Lowerlight intensity, and tip-dependent, but allows for opaque samples.

Collection: Sample is illuminated from large outside light source, and the probe collects thereflected light.

Illumination/Collection: The probe both illuminates the sample and collects the reflected light.

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Scanning near field optical microscopy

Lateral resolution: down to 20 nmVertical resolution: 2-5 nm

To study, e.g., refractive index, chemical structure, local stress...

20 nm x 20 nm intensity distribution of aVertical-Cavity Surface-Emitting Laser(VCSEL)

1 um x 1 um Tobacco Mosaic Virus

Atomic force microscopy

The AFM raster-scans the probe over a small area of the sample, simultaneouslymeasuring the local property (height, friction, magnetism...).

The probe is a tip at the end of a cantilever which bends in response to the forcebetween the tip and the sample. A laser beam is reflected into a split photo-diode andthe image is formed by recording the differential signal.

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Atomic force microscopy

Most common types of interaction:

• contact mode “contact” means the repulsive regime (above the x-axis); maindrawback of remaining in contact with the sample are strong lateral forces due to thecontact

• tapping mode cantilever oscilated at its resonant frequency (hundreds of kHz andamplitudes of the order of 20 nm only fractions of oscilation periods „in contact“ lateral forces largely reduced (convenient for soft samples): “phase imaging” is possible,based on measuring the phase difference between the cant. oscilations and the detectedoscilations.

• non-contact mode cantilever oscilated at distances 50-150 Å above suface, i.e. in theattractive regime main drawback: possibility of jumping into contact mode

• lift mode scanning at distances where the topographic image is not possible

imaging of long-range (magnetic and electrostatic) forces

• lateral force microscopy (LFM) 4-segment photo-diode detection of thecantilever torsion variation in friction between the tip and the sample will twist thecantilever (possible causes: adhesion, surface roughness, elastic properties, chemicalcomposition, local elecrostatic interaction, chemical interaction). If the interaction isknown, it can be directly measured.

•...

Atomic force microscopy

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Atomic force microscopy

Atomic resolution, works with conductive or non-conductive samples, in air orvacuum...

Growth hillock at the calcite (104) surface observed by contact AFM in situ during crystal growth.

Coexisting metastable reconstructions of the Si(111) surface

100 um x 100 um steel surface

topography magnetic force

HDD100 um

Atomic force microscopy

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Atomic force microscopy

Hook’s law: F = k • D (valid for small displacements)

k spring constant, D deflection

D > 0 (F >0) repulsive; D < 0 (F < 0) attractive

for rectangular cantilever: k = ET3W/4L3

E elasticity modulus, T, W & L dimensions

resonant frequency fr = 0.162 (E/)½T/L2

density of cantilever

Force spectroscopy: measure nanoscale contacts, atomic bonding, Van der Waals forces,and Casimir forces, dissolution forces in liquids and single molecule stretching andrupture forces.

Resolution: pN


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