MICS RFIC Group High efficiency Power amplifier design for mm-Wave 1 Seyed Yahya Mortazavi.

MICS RFIC Group 1

High efficiency Power amplifier design for mm-Wave

Seyed Yahya Mortazavi

MICS RFIC Group 2

Outline

Introduction: Power amplifier (PA) Metrics Class A, AB, B, C Pas

High efficiency Class F Pas mm-Wave PA applications mm-Wave PA challenges and survey Our Designs: Steps, Simulations results Conclusions and future works

MICS RFIC Group 3

Power amplifier basics

Metrics: Gain: Efficiency: Power Added Efficiency:

r

CB

50

oh

m

r

r

CB

VCC

50

oh

m

AC block

Output Mathcing

InputMatching

II

ImIDMVDM

Vm

MICS RFIC Group

Power amplifier basics

4

A

AB

BC

VBE

AABBC

VCE

A AB B C

ICIC

time

Gain and Efficiency trade-off: Class A: highest gain and linearity Class C: highest efficiency …..

MICS RFIC Group 5

0 20 40 60 80 100 120 140 160 1800

0.2

0.4

0.6

0.8

IC0

IC1

PA basics

-100 0 1000

0.2

0.4

0.6

0.8

1

IC

Conduction angle (CA)ωt

CA

0 20 40 60 80 100 120 140 160 1801

1.2

1.4

1.6

1.8

2

Conduction angle (CA)

IC0 , IC1

𝐼𝐶 1𝐼𝐶 0

MICS RFIC Group 6

PA basics

High efficiency PAs Class E, switching PAs Class F

𝜂=𝑃𝑜𝑢𝑡 ,1 𝑓

𝑃𝑑𝑐

=𝑃𝑜𝑢𝑡 ,1 𝑓

𝑃𝑑𝑖𝑠𝑠+𝑃𝑜𝑢𝑡 ,1 𝑓 +∑𝑛=2

∞

𝑃𝑜𝑢𝑡 ,𝑛 𝑓

0 0.2 0.4 0.6 0.8 10

0.5

1

0 0.2 0.4 0.6 0.8 10

0.5

1

ω0 t

𝑍 𝐿 ,𝑛𝑓=|𝑍 𝐿,𝑛𝑓|𝑒− 𝑗𝜑 𝑛

𝑖𝑐𝑣𝑐

MICS RFIC Group 7

Class F PAs

Uses harmonics to Reduce Vce for same fundamental: same output power with less dissipated power.

F3: F2: F35: F24:

-0.5 0 0.5 1 1.5-1

-0.5

0

0.5

1

Vdsfundumental3rd H

Vce

0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.40.7

0.8

0.9

1

Maximally Flat (F3)Maximum Efficiency (F3)

Vce

time

time

CB

Ro

pt

r

r

CB

VCC

50 o

hm

r AC block

VBB

AC block

Matching

r

L1C1

Harmonic filtering

r

L3h

C3h

3rd Harmonic filter

MICS RFIC Group 8

Class F PA

F3 F2 F35 F2478

80

82

84

86

88

90

92

94

96

98

η(Maximally Flat)η(Max Efficiency)

1.12, 1.15Pi/2,

1.33,1.41Pi/4

1.17,1.207Pi/2

1.42,1.5Pi/4

Vm/Vdc

Im/Idc

MICS RFIC Group 9

mm-Wave PAs Application

Data Communication (based on FCC frequency allocation): 59-64 GHz (V-band), 71-76 GHz, 81-86 GHz (E-bands), and 92-95 GHz (W-bands)

77 GHz Automotive Radars

> 77 GHz Active Imaging: Security gates, Medical Imaging

applications, Radar systems,

MICS RFIC Group 10

CB

r

CB

VCC

r AC blockAC block

RL

Cp

Si-based mm-Wave PAs

Low Break-down voltage: Reduces output voltage swing: smaller output power or gain

More sensitive to parasitics: Parasitics have Lower impedance as frequency increase

Close to fT of transistor: Lower power gain and PAE

VCE

IC

BVCO

MICS RFIC Group

Si-based mm-wave PAs

11

30 40 50 60 70 80 90 100 11005

10152025303540

30 40 50 60 70 80 90 100 1100

5

10

15

20

25

Frequency (GHz)Frequency (GHz)

Po

ut

(dB

m)

PA

E (

%)

30 40 50 60 70 80 90 1000

5

10

15

20

25

CMOS And SiGe PAs

SiGe PAs

30 40 50 60 70 80 90 10005

101520253035

Frequency (GHz)Frequency (GHz)

Po

ut

(dB

m)

PA

E (

%)

MICS RFIC Group


12

Frequency (GHz)

Gai

n(d

B)

CMOS And SiGe PAs

SiGe PAs

Frequency (GHz)

Gai

n (

dB

)

30 40 50 60 70 80 90 100 11005

101520253035

30 40 50 60 70 80 90 1000

5

10

15

20

25

30

MICS RFIC Group 13

Review- VCE > BVCO

79GHz, PAE~ 13.5%, Pout ~ 17.7 dBm, Gain~14 dB, Class AB The external base impedance seen from Q1, Q2, and Q3 is small at

Wband frequencies. The resulting effective collectoremitter breakdown voltage allows the output voltage at the collectors to peak above 4.2 V, a factor of 2.5 improvement over BVceo.

RFIC-2008

MICS RFIC Group 14

Review- Cascoding

77GHz, PAE~ 7.5%, Pout ~ 15 dBm, Gain~22.5 dB, Class AB the CAS topology was preferred to achieve a higher stable gain,

better reverse isolation, and improved robustness. A large output voltage swing is tolerated by the CB ( > BVCO) if

it is driven with a low base resistance.

TMTT-2011

MICS RFIC Group 15

Review- Current reuse

77GHz, PAE~ 9%, Pout ~ 14.5 dBm, Gain~25 dB, Class AB Current reuse at Driver stage

TMTT-2012

MICS RFIC Group 16

PA design Steps

DC simulations for Knee and BVCO voltages for estimating maximum voltage swing (Vpp),

Calculation and simulations for finding transistor size and DC bias current for Class A PA regarding Vpp and required Pout ,

Current density for max fT is 8~11 mA/um for SiGe HBTs.

Input matching for selected size and bias point, Iterative Load-pull simulations for determining parasitic

capacitance (Cce or Cp) and verifying Ropt , Changing bias from class A to class AB for max efficiency

and Gain, Adjusting Ropt Output matching,

MICS RFIC Group 17

PA design Steps

Bias for class A, Ropt for Load-line Power matching vs conjugate power

matching

MICS RFIC Group 18

PA design Steps

Input matching and load pull (94GHz PA) Load-pull simulation is done for different

Lp to get the optimum point over pure realImpedance

r

VCC

r AC block

VBB

AC block

Cp

r

CB

50

oh

m

Matching

Γ

r

Lp

MICS RFIC Group 19

PA design StepsChanging bias point from A to AB

VBE VBE

PA

E (

%)

PA

E (

%)

Pin (dBm) Rout (Ω)

Rout=38ΩPin = 11 dBm

r

VCC

r AC block

VBB

AC block

Cp

r

CB

50

ohm Matching

r

Lp

Rout

CB

VBE (mV)

PA

E (

%)

Ga

in (

dB

)

Rout=38Ω, Pin=0, 11 dBm

MICS RFIC Group 20

Utilizing 3rd H for efficiency (F3)

r

VCC

r AC block

VBB

AC block

Cp

r

CB

50 o

hm Matching

Ropt

CBOutput Network

MICS RFIC Group 21


r

r

VCC

Cp

r

CB

50 o

hm Matching

Ropt

CB

Lp

L3H

C3H

r

VCC

Cp

r

CB

50 o

hm Matching

Ropt

CB

L1

L3H

C3H

C2

r

rL2

MICS RFIC Group 22


Po

ut

(dB

m)

PA

E (

%)

Pd

issp

(m

W)

ABF3-filter

F3-Harmonic Control

Pin (dBm) Pin (dBm)

MICS RFIC Group 23


r

C3H

L3H

rrL1H

L1H

C1H

C1H

L3H

TL

VCC

r

CB CMI

LMI

RB2RB1

Rref

VBB

50 o

hm

r

r

CB

50 o

hmCMO

LMO

Q2Q1

MICS RFIC Group 24


Po

ut

(dB

m)

PA

E (

%)

Pd

issp

(m

W)

Pin (dBm) Pin (dBm)

Pin (dBm)

MICS RFIC Group 25

94 GHz 1-Stage Class-F PA (VCC = 1.3V): Schematic

Class-F, 1-stage design: 2nd & 3rd harmonic controls Harmonic filter: high-Z for fund & 3rd-harmonic, low-Z for 2nd-harmonic OP-1dB: ~10 dBm, Psat: ~11.5 dBm PAE: max 15-16 %

MICS RFIC Group 26

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =15.3%

P-1dB = 7.7dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22

S11

S21

94 GHz 1-Stage Class-F PA (VCC = 1.3V): Simulations

MICS RFIC Group 27

94 GHz 1-Stage Class-F PA (VCC = 1.3V): Layout

VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd

Size: 535μm x 390μm

MICS RFIC Group 28


Class-F, 1-stage design: 2nd & 3rd harmonic controls Harmonic filter: high-Z for fund & 3rd-harmonic, low-Z for 2nd-harmonic OP-1dB: ~15 dBm, Psat: ~16 dBm PAE: max 21-22 %

MICS RFIC Group 29

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =21.8%

P-1dB = 11.9dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22S11

S21


MICS RFIC Group 30


VBB VCC gndgnd

gnd

gnd

rfIn rfOut


gnd

gnd

MICS RFIC Group 31

94 GHz 2-Stage Class-F PA: Schematic

Class-F, 2-stage design: 2nd & 3rd harmonic controls Harmonic filter: high-Z for fund & 3rd-harmonic, low-Z for 2nd-harmonic OP-1dB: ~16 dBm, Output Psat: ~17 dBm PAE: max 21-22 %

MICS RFIC Group 32

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =22%

P-1dB = 9.1dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22 S11

S21

94 GHz 2-Stage Class-F PA : Simulations

MICS RFIC Group 33

94 GHz 2-Stage Class-F PA : Layout

VBB1 VCC1 gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd

VCC2 VBB2 gndgnd


MICS RFIC Group 34

60 GHz 1-Stage Class-F PA with coupled harmonic control: Schematics

Class-F, 1-stage design: 2nd & 3rd harmonic controls Harmonic filter: high-Z for fund & 3rd-harmonic, low-Z for 2nd-harmonic OP-1dB: ~12.8 dBm, Psat: ~15 dBm PAE: max 25-26 %

MICS RFIC Group 35

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =25.5%

P-1dB = 7.7dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22

S11

S21

60 GHz 1-Stage Class-F PA with coupled harmonic control: Simulations

These are simulation results including layout sonnet EM-model. Single stage design has ~15 dBm Psat with 25-26% PAE.

MICS RFIC Group 36

60 GHz 1-Stage Class-F PA with coupled harmonic control: Layout

VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd


MICS RFIC Group 37

Design Summary

94GHz PAE (%) IP1dB (dBm) Psat (dBm) Gain (dB)

1stage-1.3V 15.3 7.7 12.5 3.8

1stage-2.2V 21.8 11.9 17 4

2stage 22 9.1 17 7.8

60GHz PAE (%) P1dB (dBm) Psat (dBm) Gain (dB)

1stage-1.3V 25.8 5.5 12.5 6.5

1stage-2.2V 29 9.7 17 7

2stage 28.5 4.2 16 11.5

33GHz PAE (%) P1dB (dBm) Psat (dBm) Gain (dB)

1stage-1.3V 30 2.5 11 7

1stage-2.2V 40 4 15 10

MICS RFIC Group


38

30 40 50 60 70 80 90 1000

5

10

15

20

25 SiGe PAs

30 40 50 60 70 80 90 10005

10152025303540

Frequency (GHz)

Po

ut

(dB

m)

PA

E (

%)

Frequency (GHz)

Frequency (GHz)

Gai

n (

dB

)

30 40 50 60 70 80 90 1000

5

10

15

20

25

30

MICS RFIC Group 39

Future Works

Increasing gain using efficient driving stages Increasing gain using Power combining techniques Improving quality factor of Capacitors using MOM caps Class E PAs

MICS RFIC Group 40



MICS RFIC Group 41

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =25.8%

P-1dB = 5.5dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22S11

S21


These are simulation results including layout sonnet EM-model. Single stage design has ~12.5 dBm Psat with 25-26% PAE.

MICS RFIC Group 42


VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd


MICS RFIC Group 43



MICS RFIC Group 44

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =29%

P-1dB = 9.7dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22S11

S21



MICS RFIC Group 45


VBB VCC gndgnd

gnd

gnd

rfIn rfOut


gnd

gnd

MICS RFIC Group 46

60 GHz 2-Stage Class-F PA : Schematic

Class-F, 2-stage design: 2nd & 3rd harmonic controls Harmonic filter: high-Z for fund & 3rd-harmonic, low-Z for 2nd-harmonic OP-1dB: ~15 dBm, Psat: ~16 dBm PAE: max 28-29 %

MICS RFIC Group 47

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =28.5%

P-1dB = 4.2dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22

S11

S21

60 GHz 2-Stage Class-F PA : Simulations

MICS RFIC Group 48

60 GHz 2-Stage Class-F PA : Layout

VBB1 VCC1 gndgnd

rfIn rfOut

gnd

gnd

gnd

gnd

VBB2 VCC2 gnd


MICS RFIC Group 49



MICS RFIC Group 50

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =30%

P-1dB = 2.5dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22

S11

S21



MICS RFIC Group 51


VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd


MICS RFIC Group 52

33 GHz 1-Stage Class-F PA (VCC = 2V): Schematic


MICS RFIC Group 53

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =40%

P-1dB = 4dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22 S11

S21

33 GHz 1-Stage Class-F PA (VCC = 2V): Simulations


MICS RFIC Group 54

33 GHz 1-Stage Class-F PA (VCC = 2V): Layout

VBB VCC gndgnd

gnd

gnd

rfIn rfOut


gnd

gnd

MICS RFIC Group 55



MICS RFIC Group 56

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =25.5%

P-1dB = 7.7dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22

S11

S21



MICS RFIC Group 57


VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd


MICS RFIC Group 58



r

C3H

L3H

rrL1H

L1H

C1H

C1H

L3H

TL

1.5V

r

CB CMI

LMI

RB2RB1

Rref

50

oh

m

r

r

CB

50

oh

mCMO

LMO

Q2

r

C2H

L2HVBB

Harmonic filter

Z-matching

Z-matching

biasing

MICS RFIC Group 59

Pou

t (d

Bm

)

Pin (dBm)PA

E (

%)

PAEmax =32%

P-1dB = 10.2dBm

S-p

ara

mete

r (d

B)

Freq (GHz)

S22 S11

S21



MICS RFIC Group 60


VBB VCC gndgnd

gnd

gnd

rfIn rfOut

gnd

gnd


MICS RFIC Group 61


Po

ut

(dB

m)

PA

E (

%)

Pd

issp

(m

W)

Ic (

mA

)

Vce

(V

)

time (ps)

AB

F3-filterF3-Harmonic Control

ABF3-filter

F3-Harmonic Control

Pin (dBm) Pin (dBm)

Date post:	14-Dec-2015
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MICS RFIC Group High efficiency Power amplifier design for mm-Wave 1 Seyed Yahya Mortazavi.

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