COHERENT.COM | DILAS.COM

Mid-Infrared Diode LasersSingle Emitters, Laser Bars and Fiber-Coupled Modules

1850 nm to 2300 nm

Welcome

DILAS Semiconductor is now part of Coherent Inc.

With operations in Germany, North America and China, Coherent | DILAS develops and manufactures high-power semiconductor laser components, modules and turnkey diode laser systems for distributions worldwide. Setting the standard for performance and reliability, Coherent | DILAS’ high-power, high brightness product portfolio offers a wide selection of configurations, powers, and wavelengths from 405 nm to 2300 nm.

Our core technology consists of clean room based process lines for GaAs, InP and GaSb based diode lasers including in-house epi designs grown by MBE (Molecular Beam Epitaxy) and MOCVD (Metalorganic Vapor Phase Epitaxy) and a patented facet coating technology.

We offer bare chips, single emitters and laser bars based on tapered, broad-area or customized designs. Our diode lasers in the lower mid-infrared (1.85 µm to >2 µm) wavelength regimes are being used globally in the fields of medical treatment, materials processing, spectroscopy, and metrology.

For more information visit www.DILAS.com | www.COHERENT.com.

Coherent | DILAS Semiconductor Business Unit, Freiburg, Germany

Mid-Infrared Diode Lasers based on GaSb

Applications

Lasers emitting at wavelengths between 1.85 µm and >2 µm open up a wide range of applications as compact and efficient light sources due to the specific absorption characteristics of many materials within this wavelength regime.

Civilian Applicationsff Laser surgeryff Medical diagnosticsff Dermatological treatmentsff Direct materials processing of plastics

Military Applicationsff Infrared countermeasuresff Pumping of solid state lasersff Pumping of optically pumped semiconductor lasers emitting

in the 2 µm to 4 µm regimeff Low probability of intercept communication linksff Trace gas analysis

GaSb based High-Power Diode Lasers

In contrast to well-established solid-state lasers used so far, the diode laser technology offers great benefits for the above-mentioned applications:

ff Compact and efficient light sources ff Wavelengths tunable by current and temperature ff Power scalability by bar and stack technology ff Long lifetimesff Maintenance-free

GaSb based Quantum Well (QW) diode lasers fabricated using the GaSb based (AlGaIn) (AsSb) materials system are naturally predestined for this wavelength range and offer clear advantages in terms of output power and wall-plug efficiency in comparison to other laser solutions, e.g. based on InP.

Diode laser single emitters, as well as linear arrays consisting of 19 emitters on a 10 mm long bar are available. Emitting wavelengths of 1870 nm, 1908 nm, 1940 nm and 2200 nm are on stock. Other wavelengths are available on request. Based on these single emitters and laser bars, fiber-coupled modules and laser stacks can also be offered.

1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.00.0

0.2

0.4

0.6

0.8

1.0

1.4 1.6 1.8 2.0 2.2 2.4-20

020406080

100120140

transparant plastic

wavelength (µm)

trans

miss

ion

water

wavelength (µm)

abso

rptio

n (c

m-1)

Product Portfolio

Single Emitters

Wavelengths 1870 nm to 2200 nmOutput power 0.5W to 1WType Multi-modePackaging C-mount or customized

Wavelengths 2090 nm, 2300 nmOutput power 30 mW to 50 mWType Single-modePackaging C-mount or customized

Laser Bars

Wavelengths 1870 nm to 1960 nmOutput power 10W to 15WType Multi-modePackaging M-mountFAC lensing Optional

Laser Modules (Laser Array based)

Wavelengths 1870 nm to 1960 nmOutput power 6W to 8WType Multi-modeFiber packaging 400 µm to 800 µm, NA 0.22

Wavelengths 1870 nm to 1960 nmOutput power 10W to 15WType Multi-modeFiber packaging 400 µm to 800 µm, NA 0.22

Wavelengths 1870 nm to 1960 nmOutput power 15W to 20WType Multi-modeFiber packaging 400 µm to 800 µm, NA 0.22

Specifications

Detailed datasheets for each wavelength can be downloaded at www.DILAS.com.

Optical and spectral dataCenter wavelength nm 1870 / 1908 / 1940 / 2200CW nominal output power W 0.5 / 0.7 / 1.0Center wavelength variation nm ±10Spectral bandwidth (FWHM) nm <10Wavelength temperature coefficient nm / K 1.2Polarization TE / TM TEDivergence parallel (FWHM) Degree <11Divergence perpendicular (FWHM) Degree <45

Design dataEmitter stripe width µm 100 / 150 Cavity length mm 1.0 / 1.5

Electrical data (typical)Operation current A <4Threshold current A <0.4Slope efficiency W / A >0.26Operation voltage V <1.2Power conversion efficiency % >20

Thermal dataOperating temperature °C 15 to 30Storage temperature (non-condensing atmosphere) °C –20 to 60

Operating environment conditions Non-condensing atmosphere

PackageHeat sink type C-mountCathode (–) Wire flagAnode (+) Base plate

Laser barsCW nominal output power W 10Fill factor % 20 / 30Heat sink type M-mount (passively cooled)

Laser modules (bar based)CW nominal output power W 6 / 12 / 18 2 @ 2200 nmFiber core, NA µm 400 / 600 / 800, NA = 0.22

Example Measurement Data

The charts presented describe typical measurement data examples only. All modules are characterised individually, the results being contained in the documentation included. The display options are subject to alteration by Coherent | DILAS.

Measurements based on Single Emitters

Measurements based on Laser Bars

0 1 2 3 4 50.0

0.3

0.6

0.9

1.2

1.5

0 2000 4000 6000 8000 100000.7

0.8

0.9

1.0

0 1 2 3 40.0

0.2

0.4

0.6

0.8

-20 0 20 40 60 80 1001.81.92.02.12.22.32.4

λ = 1940nm

T = 20°C, cw

outp

ut p

ower

(W)

current (A)0 5 10 15 20 25 30

0

2

4

6

8

10

λ = 1940nm

pulse conditions:500ns, 1% d.c.T=20°C

ou

tput

pow

er (W

)

current (A)

T=20°C, cw

λ = 1908nm

operation time (hours)

out

put p

ower

(W)

λ=1908nm

λ=2200nm

ex fiber 0.22NA200µm fiber core

current (A)

out

put p

ower

(W)

λ=2200nm

λ=1870nm

tuning: 1.2nm/K

temperature (°C)

wav

elen

gth

(nm

)

0 10 20 30 40 50 600

5

10

15

20

0 2000 4000 6000 80000

5

10

15

20

0 10 20 30 40 50 6005

10152025

0 10 20 30 40 500

5

10

15

20

λ = 1940nm

T = 20°C, cw

outp

ut p

ower

(W)

current (A)0 10 20 30 40 50 60

0

5

10

15

20

λ = 2200nm

T = 20°C, cw

outp

ut p

ower

(W)

current (A)

20% fill factorT=20°C, cw

λ = 1940nm

operation time (hours)

out

put p

ower

(W)

3-bar module600µm core fiber 1-bar module

400µm core fiber

current (A)

out

put p

ower

(W)

λ=1870nm

30% fill factorquasi-cw, 20°C

current (A)

out

put p

ower

(nm

)

Safety

This is a laser class IV product according to IEC - Standard International Commission (Publication 825, 1993). The laser light emitted from this laser diode is invisible and/or visible and is harmful to the human eye. The safety regulations for eye and personnel protection included in the IEC Standard must be observed to avoid any harm to operating personnel. Avoid direct exposure and looking into the laser diode, into the collimated beam or into the fiber when it is linked to the module.

Operation and Handling

Diode lasers are extremely sensitive to over-voltage. Take extreme precaution to avoid electrostatic charges. Precautions against spiking during switching on and off the power supply must be assured. Correct polarity of power supply must be assured. During handling, personnel has to wear wrist straps. Grounded work surfaces and additional antistatic techniques are mandatory during handling. Device failure and safety hazard are caused by operation in excess of maximum ratings. Exceeding output power and temperature specification will result in accelerated device aging.

DANGERINVISIBLE LASER RADIATION

AVOID EYE OR SKIN EXPOSURETO DIRECT OR SCATTERED RADIATION

DIODE LASER> 1 W MAX OUTPUT at 765-1080 nm

CLASS IV LASER PRODUCT

Imprint

DILAS Diodenlaser GmbHGalileo-Galilei-Strasse 1055129 MainzGermany

Main Phone +49 (0) 6131-9226-0Main Fax +49 (0) 6131-9226-257

Sales Phone +49 (0) 6131-9226-202Sales Fax +49 (0) 6131-9226-253

COHERENT.COM | DILAS.COM

DI-062017

Copyrights

All rights reserved. Pictures are copyright protected by the DILAS Diodenlaser GmbH. The use of these illustrations requires an explicit permission. Please note: Specifications are subject to change without further notice.