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More on HgCdTe detectors for Astronomy
M. Robberto
“P on N” design
Metallurgy
BASE LAYER
In-doped
CAP LAYER
undoped
IMPLANT
As-dopedGold
STOICHIOMETRY (Hg1-xCdxTe) vs. DOPING (In, As)
Geometry
~10 micron~1 micron
~1
mic
ron
REM
OV
ED
DLPH: Double Layer Planar
Heterostructure
DLPH: Double Layer Planar Heterostructure
- The CAP Layer has more Hg, wider band gap-Passivation is done with CdTe-Passivation needs protection (“overcoating”)
Heterostructure
REM
OV
ED
In concentration~1015 cm-3
As is “ion implanted”
Built-in field
REM
OV
ED
N-typeCathode
P-typeAnode
-0.05V +0.05V
( => direction of dark current)
Reverse bias
REM
OV
ED
N-typeP-type-0.250V
Vsub
Vreset
0.0V
Photogeneration
REM
OV
ED
N-typeP-type-0.250V
Vsub
Vreset
0.0V
Photogenation FORWARD biases the junction
REM
OV
ED
N-typeP-type-0.250V
Vsub
Vreset
0.0V
Reset
End of integration
The “unit cell equation”
Q C V
Differentiate:dQ CdV VdC
CCdV V dVV
CC V dVV
If :detdQ I dt
detIdVCdt C VV
Detector capacitance
And it is immediate to calculate also the derivative.
Detector currentdet dark photonI I I
, exp 1 + exp 12
b i bdark SAT diff
g
eE eWn eEI IKT KT
photI e
Iphot is negative because the convention is to assume Idark >0 under forward bias.
HEAT
HEAT HEAT
HEATHEAT
GR
DIFF
DIFF
Diffusion current
• Diffusion is a slow process;• Last only as long as the carrier lifetime.
Shockley Equation
2 exp forward biasexp 1
1 reverse bias
h ediff i
h d e
bb
a
eEeE
kTK
eD eDI n
TL N L N
,
, , , , ,
,
: detector biasD : minority carrier diffusion coefficient on the n,p side of the junction
L : diffusion lenght. It is L , with minority carrier lifetime
N : donor/acceptor concen
h e
h e h e h e h e h e
d a
V
D
trations
n : intrinsic carrier concentrationi
1/2 1/22
,
/ /h h e eSAT diff i
d a
I ekT nN N
(this is A/cm2)
• depends on mobility and recombination time scales (delicate to control)• depends on doping (easier to control)• proportional to ni
2
Generation-Recombination current
The Shockley equation neglects the current due to generation and recombination of charges in the depletion region. Both majority and minority charges are swept away by the electric field, become majority carrier in the neutral layer and generate a current that can be detected.
Generation-Recombination current
exp forward biasexp 1 2
21 reverse bias
iG R
g
bbeWn
eEeE
kTKT
I
20
0 0
: width of the depletion region: minority carrier lifetime in the depletion region
: built-in voltage = / ln /
: permittivity of the semiconductor material ( , = 8.854E
g
a d i
r
W
E kT e N N n
-12 F/m is the permittivity of the free space)
1
0
/22 1 1
(assumes abrupt junction)d a
bW E Ee N N
(this is A/cm2)
• similar to the expression for the diffusion current. G-R proportional to ni • Factor of 2 due to the detection of both majority and minority carriers• term E0 – Eb accounts for the size of the depletion region (in reverse bias Eb=-Erev)
Intrinsic Carrier ConcentrationFrom Hansen and Schmit (1983)
for T>50K.a)Calculate ni for the four cases of Eg (Ex.1).
Using ε=(20.5-15.5x+5.7x2) ε0, calculate
b) W (depletion width)c) Cjun (junction capacitance)
Assuming Vbuiltin =0, Vbias=-250mV, Nd=1E15cm-3, Na=1E19 cm-3, and 18micron pix.size.
Other dark current sources
• Band-to-band tunneling• Trap-assisted tunneling• Surface region tunneling• Surface leakage• Other leakages
a)Tunneling is independent on temperature.b)These phenomena dominate at low temperature.