Pulsed drain current3) ID,pulse - - 1100 A TC=25°CAvalanche current, single pulse4) IAS - - 50 A TC=25°CAvalanche energy, single pulse EAS - - 230 mJ ID=50A,RGS=25ΩGate source voltage VGS -20 - 20 V -
Power dissipation Ptot--
--
1392.5 W TC=25°C
TA=25°C,RthJA=50K/W2)
Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category;DIN IEC 68-1: 55/150/56
2Thermalcharacteristics
Table3ThermalcharacteristicsValues
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperatureat 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actualenvironmental conditions.2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drainconnection. PCB is vertical in still air.3) See Diagram 3 for more detailed information4) See Diagram 13 for more detailed information
Min. Typ. Max.Parameter Symbol Unit Note/TestCondition
Diode continuous forward current IS - - 139 A TC=25°CDiode pulse current IS,pulse - - 1100 A TC=25°CDiode forward voltage VSD - 0.57 0.7 V VGS=0V,IF=20A,Tj=25°CReverse recovery charge Qrr - 20 - nC VR=20V,IF=20A,diF/dt=400A/µs
1) See ″Gate charge waveforms″ for parameter definition2) Defined by design. Not subject to production test
6
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
TC[°C]
Ptot[W
]
0 40 80 120 1600
20
40
60
80
100
120
140
160
Ptot=f(TC)
Diagram2:Draincurrent
TC[°C]
ID[A
]
0 20 40 60 80 100 120 140 1600
50
100
150
200
250
300
ID=f(TC);VGS≥10V
Diagram3:Safeoperatingarea
VDS[V]
ID[A
]
10-1 100 101 10210-2
10-1
100
101
102
103
104
1 µs
10 µs100 µs
1 ms
10 ms
DC
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram4:Max.transientthermalimpedance
tp[s]
ZthJC[K
/W]
10-6 10-5 10-4 10-3 10-2 10-1 10010-3
10-2
10-1
100
101
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
ZthJC=f(tp);parameter:D=tp/T
7
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
Diagram5:Typ.outputcharacteristics
VDS[V]
ID[A
]
0 1 2 30
100
200
300
400
500
600
700
800
4 V
4.5 V5 V
10 V
3.5 V
3.2 V
3 V
2.8 V
ID=f(VDS);Tj=25°C;parameter:VGS
Diagram6:Typ.drain-sourceonresistance
ID[A]
RDS(on
) [m
Ω]
0 20 40 60 80 1000.0
0.5
1.0
1.5
2.0
3.2 V
3.5 V
4 V4.5 V5 V
6 V8 V
10 V
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
VGS[V]
ID[A
]
0 1 2 3 4 50
80
160
240
320
400
150 °C 25 °C
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Diagram8:Typ.forwardtransconductance
ID[A]
gfs [S]
0 25 50 75 1000
80
160
240
320
400
gfs=f(ID);Tj=25°C
8
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
Diagram9:Drain-sourceon-stateresistance
Tj[°C]
RDS(on
) [m
Ω]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
max
typ
RDS(on)=f(Tj);ID=50A;VGS=10V
Diagram10:Typ.gatethresholdvoltage
Tj[°C]
VGS(th) [V]
-60 -20 20 60 100 140 1800.0
0.5
1.0
1.5
2.0
2.5
VGS(th)=f(Tj);VGS=VDS;IDS=10mA
Diagram11:Typ.capacitances
VDS[V]
C[p
F]
0 10 20 30 40101
102
103
104Ciss
Coss
Crss
C=f(VDS);VGS=0V;f=1MHz
Diagram12:Forwardcharacteristicsofreversediode
VSD[V]
IF [A]
0.00 0.25 0.50 0.75 1.00 1.25 1.50101
102
103
104
-55 °C25 °C125 °C150 °C
IF=f(VSD);parameter:Tj
9
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
Diagram13:Avalanchecharacteristics
tAV[µs]
IAV [A]
100 101 102 103100
101
102
25 °C
100 °C
125 °C
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
Diagram14:Typ.gatecharge
Qgate[nC]
VGS [V]
0 20 40 60 80 1000
2
4
6
8
10
12
32 V
20 V8 V
VGS=f(Qgate);ID=50Apulsed;parameter:VDD
Diagram15:Typ.drain-sourceleakagecurrent
VSD[V]
IDSS[A
]
0 5 10 15 20 25 30 3510-6
10-5
10-4
10-3
10-2
125 °C
100 °C
75 °C
25 °C
IDSS=f(VDS);VGS=0V;parameter:Tj
Diagram Gate charge waveforms
10
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
5PackageOutlines
1
10:1
Z8B000193699
REVISION
ISSUE DATE
EUROPEAN PROJECTION
03
19.06.2019
0 3mm
DOCUMENT NO.
1.27
MILLIMETERSDIMENSION
0.90 1.20
D1
A
b
D
D2
E
E1
E2
e
L
0.26 0.54
0.02 0.23
3.88 4.42
0.69 0.90
MIN. MAX. SCALE
2
M 0.45 0.69
0.15 0.35A1
3.70 4.40
4.80 5.35
5.70 6.10
5.90 6.42
Figure1OutlineTDSON-8FL,dimensionsinmm
11
OptiMOSTMPower-MOSFET,40VBSC010N04LSI
Rev.2.5,2020-05-15Final Data Sheet
PG-TDSON-8FL: Recommended Boardpads & Apertures
Figure 2 Outline Boardpads (TDSON-8 FL)
12
OptiMOS TM Power-MOSFET , 40 VBSC010N04LSI
Rev. 2.5, 2020-05-15Final Data Sheet
Figure 3 Outline Tape (TDSON-8 FL )
13
OptiMOS TM Power-MOSFET , 40 VBSC010N04LSI
Rev. 2.5, 2020-05-15Final Data Sheet
Revision HistoryBSC010N04LSI
Revision: 2020-05-15, Rev. 2.5
Previous Revision
Revision Date Subjects (major changes since last revision)
2.2 2016-05-04 Update footnotes and insert max values
2.3 2018-08-17 Update timing parameters
2.4 2019-09-27 Update package drawings
2.5 2020-05-15 Update current rating
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