1

IPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

ThinPAK8x8

DrainPin 5

GatePin 1

PowerSourcePin 3,4

DriverSourcePin 2

MOSFET600VCoolMOSªCFD7PowerTransistorCoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthesuccessortotheCoolMOS™CFD2seriesandisanoptimizedplatformtailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-classreverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’sfastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesofafastswitchingtechnologytogetherwithsuperiorhardcommutationrobustness,withoutsacrificingeasyimplementationinthedesign-inprocess.TheCoolMOS™CFD7technologymeetshighestefficiencyandreliabilitystandardsandfurthermoresupportshighpowerdensitysolutions.Altogether,CoolMOS™CFD7makesresonantswitchingtopologiesmoreefficient,morereliable,lighterandcooler.

Features•Ultra-fastbodydiode•Lowgatecharge•Best-in-classreverserecoverycharge(Qrr)•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness•LowestFOMRDS(on)*QgandRDS(on)*Eoss•Best-in-classRDS(on)inSMDandTHDpackages

Benefits•Excellenthardcommutationruggedness•Highestreliabilityforresonanttopologies•Highestefficiencywithoutstandingease-of-use/performancetradeoff•Enablingincreasedpowerdensitysolutions

PotentialapplicationsSuiteableforSoftSwitchingtopologiesOptimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,Telecom,EVCharging

ProductvalidationFullyqualifiedaccordingtoJEDECforIndustrialApplications

Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegateorseparatetotempolesisgenerallyrecommended.

Table1KeyPerformanceParametersParameter Value UnitVDS @ Tj,max 650 V

RDS(on),max 225 mΩ

Qg,typ 23 nC

ID,pulse 42 A

Eoss @ 400V 2.6 µJ

Body diode diF/dt 1300 A/µs

Type/OrderingCode Package Marking RelatedLinksIPL60R225CFD7 PG-VSON-4 60R225F7 see Appendix A

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600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

TableofContentsDescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

3

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

1MaximumratingsatTj=25°C,unlessotherwisespecified

Table2MaximumratingsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Continuous drain current1) ID --

--

128 A TC=25°C

TC=100°C

Pulsed drain current2) ID,pulse - - 42 A TC=25°C

Avalanche energy, single pulse EAS - - 49 mJ ID=3.2A; VDD=50V; see table 10

Avalanche energy, repetitive EAR - - 0.24 mJ ID=3.2A; VDD=50V; see table 10

Avalanche current, single pulse IAS - - 3.2 A -

MOSFET dv/dt ruggedness dv/dt - - 120 V/ns VDS=0...400VGate source voltage (static) VGS -20 - 20 V static;

Gate source voltage (dynamic) VGS -30 - 30 V AC (f>1 Hz)

Power dissipation Ptot - - 68 W TC=25°CStorage temperature Tstg -40 - 150 °C -

Operating junction temperature Tj -40 - 150 °C -

Mounting torque - - - - Ncm -

Continuous diode forward current IS - - 12 A TC=25°CDiode pulse current2) IS,pulse - - 42 A TC=25°C

Reverse diode dv/dt3) dv/dt - - 70 V/ns VDS=0...400V,ISD<=12A,Tj=25°C see table 8

Maximum diode commutation speed diF/dt - - 1300 A/µs VDS=0...400V,ISD<=12A,Tj=25°C see table 8

Insulation withstand voltage VISO - - n.a. V Vrms,TC=25°C,t=1min

1) Limited by Tj,max.2) Pulse width tp limited by Tj,max3) Identical low side and high side switch with identical RG

4

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

2Thermalcharacteristics

Table3ThermalcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Thermal resistance, junction - case RthJC - - 1.84 °C/W -

Thermal resistance, junction - ambient RthJA - - 62 °C/W device on PCB, minimal footprint

Thermal resistance, junction - ambientfor SMD version RthJA - 35 45 °C/W

Device on 40mm*40mm*1.5mmepoxy PCB FR4 with 6cm² (onelayer, 70µm thickness) copper areafor drain connection and cooling.PCB is vertical without air streamcooling.

Soldering temperature, wavesolderingonly allowed at leads Tsold - - 260 °C reflow MSL2A

5

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

3ElectricalcharacteristicsatTj=25°C,unlessotherwisespecified

Table4StaticcharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Drain-source breakdown voltage V(BR)DSS 600 - - V VGS=0V,ID=1mAGate threshold voltage V(GS)th 3.5 4 4.5 V VDS=VGS,ID=0.24mA

Zero gate voltage drain current1) IDSS --

-5

137 µA VDS=600V,VGS=0V,Tj=25°C

VDS=600V,VGS=0V,Tj=125°C

Gate-source leakage current IGSS - - 100 nA VGS=20V,VDS=0V

Drain-source on-state resistance RDS(on)--

0.1890.429

0.225- Ω VGS=10V,ID=4.9A,Tj=25°C

VGS=10V,ID=4.9A,Tj=150°C

Gate resistance RG - 10.9 - Ω f=1MHz,opendrain

Table5DynamiccharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Input capacitance Ciss - 1015 - pF VGS=0V,VDS=400V,f=250kHzOutput capacitance Coss - 18 - pF VGS=0V,VDS=400V,f=250kHz

Effective output capacitance, energyrelated2) Co(er) - 33 - pF VGS=0V,VDS=0...400V

Effective output capacitance, timerelated3) Co(tr) - 330 - pF ID=constant,VGS=0V,VDS=0...400V

Turn-on delay time td(on) - 22 - ns VDD=400V,VGS=10V,ID=6.0A,RG=10.2Ω;seetable9

Rise time tr - 16.5 - ns VDD=400V,VGS=10V,ID=6.0A,RG=10.2Ω;seetable9

Turn-off delay time td(off) - 54 - ns VDD=400V,VGS=10V,ID=6.0A,RG=10.2Ω;seetable9

Fall time tf - 7.5 - ns VDD=400V,VGS=10V,ID=6.0A,RG=10.2Ω;seetable9

Table6GatechargecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Gate to source charge Qgs - 6 - nC VDD=400V,ID=6.0A,VGS=0to10VGate to drain charge Qgd - 7 - nC VDD=400V,ID=6.0A,VGS=0to10VGate charge total Qg - 23 - nC VDD=400V,ID=6.0A,VGS=0to10VGate plateau voltage Vplateau - 5.7 - V VDD=400V,ID=6.0A,VGS=0to10V

1) Maximum specification is defined by calculated six sigma upper confidence bound2)Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V3)Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V

6

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

Table7ReversediodecharacteristicsValues

Min. Typ. Max.Parameter Symbol Unit Note/TestCondition

Diode forward voltage VSD - 1.0 - V VGS=0V,IF=4.9A,Tj=25°C

Reverse recovery time trr - 92 138 ns VR=400V,IF=6.0A,diF/dt=100A/µs;see table 8

Reverse recovery charge Qrr - 0.385 0.77 µC VR=400V,IF=6.0A,diF/dt=100A/µs;see table 8

Peak reverse recovery current Irrm - 7.5 - A VR=400V,IF=6.0A,diF/dt=100A/µs;see table 8

7

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

4Electricalcharacteristicsdiagrams

Diagram1:Powerdissipation

TC[°C]

Ptot[W

]

0 25 50 75 100 125 1500

20

40

60

80

Ptot=f(TC)

Diagram2:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

DC

10 ms

ID=f(VDS);TC=25°C;D=0;parameter:tp

Diagram3:Safeoperatingarea

VDS[V]

ID[A

]

100 101 102 10310-4

10-3

10-2

10-1

100

101

102

1 µs

10 µs

100 µs

1 ms

10 ms

DC

ID=f(VDS);TC=80°C;D=0;parameter:tp

Diagram4:Max.transientthermalimpedance

tp[s]

ZthJC[K

/W]

10-5 10-4 10-3 10-2 10-110-2

10-1

100

101

0.5

0.2

0.1

0.02

0.05

0.01

single pulse

ZthJC=f(tP);parameter:D=tp/T

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600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

Diagram5:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

10

20

30

40

50

60

20 V

10 V

8 V

7 V

6 V

5.5 V5 V4.5 V

ID=f(VDS);Tj=25°C;parameter:VGS

Diagram6:Typ.outputcharacteristics

VDS[V]

ID[A

]

0 5 10 15 200

8

16

24

32

40

20 V

10 V

8 V7 V

6 V

5.5 V

5 V

4.5 V

ID=f(VDS);Tj=125°C;parameter:VGS

Diagram7:Typ.drain-sourceon-stateresistance

ID[A]

RDS(on

) [Ω]

0 10 20 30 400.300

0.500

0.700

10 V

20 V

7 V

6.5 V

6 V

5.5 V

RDS(on)=f(ID);Tj=125°C;parameter:VGS

Diagram8:Drain-sourceon-stateresistance

Tj[°C]

RDS(on

) [no

rmalized]

-50 -25 0 25 50 75 100 125 1500.5

1.0

1.5

2.0

2.5

RDS(on)=f(Tj);ID=4.9A;VGS=10V

9

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

Diagram9:Typ.transfercharacteristics

VGS[V]

ID[A

]

0 2 4 6 8 10 120

10

20

30

40

50

60

150 °C

25 °C

ID=f(VGS);VDS=20V;parameter:Tj

Diagram10:Typ.gatecharge

Qgate[nC]

VGS [V]

0 5 10 15 20 25 300

2

4

6

8

10

12

120 V 400 V

VGS=f(Qgate);ID=6.0Apulsed;parameter:VDD

Diagram11:Forwardcharacteristicsofreversediode

VSD[V]

IF [A]

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.810-1

100

101

102

125 °C

25 °C

IF=f(VSD);parameter:Tj

Diagram12:Avalancheenergy

Tj[°C]

EAS [mJ]

25 50 75 100 125 1500

10

20

30

40

50

EAS=f(Tj);ID=3.2A;VDD=50V

10

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

Diagram13:Drain-sourcebreakdownvoltage

Tj[°C]

VBR(DSS

) [V]

-50 -25 0 25 50 75 100 125 150540

570

600

630

660

690

VBR(DSS)=f(Tj);ID=1mA

Diagram14:Typ.capacitances

VDS[V]

C[p

F]

0 100 200 300 400 50010-1

100

101

102

103

104

105

Ciss

Coss

Crss

C=f(VDS);VGS=0V;f=250kHz

Diagram15:Typ.Cossstoredenergy

VDS[V]

Eoss[µ

J]

0 100 200 300 400 5000

1

2

3

4

5

Eoss=f(VDS)

11

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

5TestCircuits

Table8DiodecharacteristicsTest circuit for diode characteristics Diode recovery waveform

VDS

IF

Rg1

Rg 2

Rg1 = Rg 2

Table9SwitchingtimesSwitching times test circuit for inductive load Switching times waveform

VDS

VGS

td(on) td(off)tr

ton

tf

toff

10%

90%

VDS

VGS

Table10UnclampedinductiveloadUnclamped inductive load test circuit Unclamped inductive waveform

VDS

V(BR)DS

IDVDS

VDSID

12

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

6PackageOutlines

Figure1OutlinePG-VSON-4,dimensionsinmm/inches

13

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

7AppendixA

Table11RelatedLinks

• IFXCoolMOSCFD7Webpage:www.infineon.com

• IFXCoolMOSCFD7applicationnote:www.infineon.com

• IFXCoolMOSCFD7simulationmodel:www.infineon.com

• IFXDesigntools:www.infineon.com

14

600VCoolMOSªCFD7PowerTransistorIPL60R225CFD7

Rev.2.0,2019-06-04Final Data Sheet

RevisionHistoryIPL60R225CFD7

Revision:2019-06-04,Rev.2.0

Previous Revision

Revision Date Subjects (major changes since last revision)

2.0 2019-06-04 Release of final version

TrademarksAllreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

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