MP112D0.1-15 GHz GaAs MMIC Attenuator

Datasheet

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

02 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

MP112D0.1-15 GHz GaAs MMIC Attenuator

MAIN FEATURES

ABSOLUTE MAXIMUM RATINGS

• Operating range 0.1 to 15 GHz• Insertion loss 4.5 dB at 10 GHz• Attenuation range 31.5 dB (6 bit, 64 states, 0.5 dB step)• Parallel Data Input• 100% On-Wafer DC and RF Tested• 100% Visual Inspection to MIL-STD-883 Method 2010• Chip size 2500x1250 µm², thickness 100 µm

Parameter ValueSupply Voltage for Digital Control -6 V to -9 VControl Voltages 0 to +5.5 VRF Input Power TBDOperating Temperature -40° to +85°CStorage Temperature -55° to +125°C

ELECTRICAL CHARACTERISTICS (AMBIENT TEMPERATURE T = 25°C)

Symbol Parameter Min. Typ. Max. UnitΔF Frequency Range 0.1-15 GHzIL Insertion Loss 6.5 dBS11 Input Return Loss 10 dBS22 Output Return Loss 9 dBP1dB Input Power at 1 dB Compression Point 16 dBmΔ_ATT Attenuator Range (6 bit, 64 states, 0.5 dB step) 31.5 DegRMS_ATT RMS Amplitude Error 0.2 dBRMS_PhS RMS Phase Error 2.5 DegVSS Supply Voltage for Digital Control Logic -7.5 VDCVLH Control Voltage High (VA1,2,3,4,5,6) +2.2 +3.3 +5.0 VDCVLL Control Voltage Low (VA1,2,3,4,5,6) 0 – +0.7 VDCI_VSS DC Current for Digital Control (VSS=-7.5V) 10 mA

GENERAL DESCRIPTION

The MP112D is a high performance GaAs MMIC 6-bit digital attenuator which covers the frequency range 0.1 to 15 GHz and can be used in Telecommunication, Instrumentation and Radar applications. The on-chip digital control logic allows for parallel data input. This chip is manufactured using 0.18 μm gate length pHEMT process. The MMIC uses gold bond pads and backside metallization and is fully protected with Silicon Nitride passivation to obtain the highest level of reliability.

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

03 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

ON-WAFER MEASUREMENTS AT T = 25°C (TYPICAL)

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

04 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

ON-WAFER MEASUREMENTS AT T = 85°C (TYPICAL)

Input power level for characterization is -5 dBm.

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

05 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

ATTENUATOR FUNCTIONAL DIAGRAM

MECHANICAL DATA

BOND PAD DESIGNATIONS

Chip size = 2500x1250 µm² (before wafer dicing), thickness = 100 µm; Bond pad dimensions are shown to a centre of a bond pad. Bond pad / Backside metallization: Gold; RF, DC and control pads (1, 2 and 4 to 12) are 100x100 µm²; A GND pad (3) is 100x150 µm².

Pad number Pad ID DC Voltage (V) Description1 – – RF port #12 – – RF port #23 GND – Decoupling ground4 A6 0 / +3.3 Control of 16.0 dB attenuator bit5 A5 0 / +3.3 Control of 8.0 dB attenuator bit6 A4 0 / +3.3 Control of 4.0 dB attenuator bit7 VSS -7.5 Supply of digital control logic8 A3 0 / +3.3 Control of 2.0 dB attenuator bit9 A2 0 / +3.3 Control of 1.0 dB attenuator bit10 A1 0 / +3.3 Control of 0.5 dB attenuator bit11 BIAS – Reference voltage for bias generator of digital control logic (1,2)

12 REF – Reference voltage for digital control logic (1,2)

13 VQ – Monitor of the output voltage of the control logic (1)

(1) This pad is NOT used in typical conditions;(2) It’s possible to use an external voltage divider in addition to integrated circuit.

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

06 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

ATTENUATOR CONTROL TABLE

State number Attenuation (dB)

Voltage to apply on the control padsA6 A5 A4 A3 A2 A1

0 (REF) 0.0 0 0 0 0 0 01 0.5 0 0 0 0 0 12 1.0 0 0 0 0 1 03 1.5 0 0 0 0 1 14 2.0 0 0 0 1 0 05 2.5 0 0 0 1 0 16 3.0 0 0 0 1 1 07 3.5 0 0 0 1 1 18 4.0 0 0 1 0 0 09 4.5 0 0 1 0 0 110 5.0 0 0 1 0 1 011 5.5 0 0 1 0 1 112 6.0 0 0 1 1 0 013 6.5 0 0 1 1 0 114 7.0 0 0 1 1 1 015 7.5 0 0 1 1 1 116 8.0 0 1 0 0 0 017 8.5 0 1 0 0 0 118 9.0 0 1 0 0 1 019 9.5 0 1 0 0 1 120 10.0 0 1 0 1 0 021 10.5 0 1 0 1 0 122 11.0 0 1 0 1 1 023 11.5 0 1 0 1 1 124 12.0 0 1 1 0 0 025 12.5 0 1 1 0 0 126 13.0 0 1 1 0 1 027 13.5 0 1 1 0 1 128 14.0 0 1 1 1 0 029 14.5 0 1 1 1 0 130 15.0 0 1 1 1 1 031 15.5 0 1 1 1 1 132 16.0 1 0 0 0 0 033 16.5 1 0 0 0 0 134 17.0 1 0 0 0 1 035 17.5 1 0 0 0 1 136 18.0 1 0 0 1 0 037 18.5 1 0 0 1 0 138 19.0 1 0 0 1 1 039 19.5 1 0 0 1 1 140 20.0 1 0 1 0 0 041 20.5 1 0 1 0 0 142 21.0 1 0 1 0 1 043 21.5 1 0 1 0 1 144 22.0 1 0 1 1 0 045 22.5 1 0 1 1 0 146 23.0 1 0 1 1 1 047 23.5 1 0 1 1 1 148 24.0 1 1 0 0 0 049 24.5 1 1 0 0 0 150 25.0 1 1 0 0 1 051 25.5 1 1 0 0 1 152 26.0 1 1 0 1 0 053 26.5 1 1 0 1 0 154 27.0 1 1 0 1 1 055 27.5 1 1 0 1 1 1

«0» is control voltage low and «1» is control voltage high.

Micran | MP112D 0.1-15 GHz GaAs MMIC Attenuator – Datasheet

07 | MP112D | Revision 2015-07-24 | Specifications subject to change without notice.

ATTENUATOR CONTROL TABLE

State number Attenuation (dB)

Voltage to apply on the control padsA6 A5 A4 A3 A2 A1

56 28.0 1 1 1 0 0 057 28.5 1 1 1 0 0 158 29.0 1 1 1 0 1 059 29.5 1 1 1 0 1 160 30.0 1 1 1 1 0 061 30.5 1 1 1 1 0 162 31.0 1 1 1 1 1 063 31.5 1 1 1 1 1 1

«0» is control voltage low and «1» is control voltage high.

ORDERING INFORMATION

Part Number Package Type Version DescriptionMP112D Bare Die 01 0.1-15 GHz Attenuator

Wire Bonding A recommendation for RF pads (1 and 2) is one wire: diameter 25 µm, length 450 µm. A recommendation for DC and control pads (3 to 10) is one wire: diameter 25 µm, length 700-1000 µm.

Bias Arrangement The pad #7 (VSS) needs to have DC bypass capacitance of 100 pF as close to the device as possible.

Attenuator Control Bias Digital control logic is integrated in the device to supply the necessary internal switching voltages for the attenuator’s cells. The reference state is enabled with logic low (0V) on control pads of the attenuator (4 to 6 and 8 to 10). The binary weight-ed attenuation states are switched by applying logic high on the respective control pad. A control table for the attenuator is presented below.

Recommended ESD Management This device is susceptible to electrostatic and mechanical damage. Dice are supplied in antistatic contain-ers, which should be opened in cleanroom conditions at an appropriately grounded antistatic worksta-tion. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.

APPLICATION NOTES

Micran, Research & Production Company51d Kirova Avenue, Tomsk, Russia, 634041phone: +7 3822 413 403fax: +7 3822 423 615chip@micran.comwww.micran.com

This information is subject to change without notice.Published in Russia, April 5, 2016© MICRAN JSC 1991 – 2016