M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 1

I Semester

S.No Code Subject Periods Evaluation

L T P Sessional Examination Total

Subject

1 GEC 101 Semiconductor Device

Modeling & circuits

simulation

3 1 0 50 100 150

2 GEC 102 VLSI Devices & Circuits 3 1 0 50 100 150

3 GEC 103 Microelectronics &

Technology

3 1 0 50 100 150

4 GEC 104 Advanced Mathematics 3 1 0 50 100 150

5 GEC 151 Device Modeling &

Circuit Simulation Lab

0 0 3 50 50 100

Total 12 4 3 250 450 700

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 2

GEC-101 Semiconductor Device Modeling and Circuit Simulation

L T P

3 1 3

Unit 1:

Compound semiconductors, Lattice structures, Carrier drift, Direct and indirect semiconductors

Scattering, Recombination, Mean life time, Continuity equation 8

Unit 2:

PN junction characteristics, Current components in diode, Equivalent circuits of diode, BJT

characteristics, Second order effects in BJT: Thermal runaway, Base width modulation, Kirk

effect, Band gap narrowing, Small signal analysis. 7

Unit 3:

Eber’s moll model, Hybrid pi model, Figure of merit, approximate model and complete equivalent model of BJT, Charge control model, Gummel poon model, SPICE model of BJT,

Simulation of BJT 9

Unit 4:

N-channel, P-channel MOS characteristics and features, Enhancement and depletion mode:

second order effects of MOS: Body effect, Channel length modulation, Subthreshold conduction,

DIBL, Hot carrier effect, Mobility degradation, Velocity saturation, CMOS latch up, MOS

parasitic capacitances and resistances. 8

Unit 5:

Circuits models for MOSFET: small signal, SPICE models, BSIM model, Simulation and Layout

design DC, AC and Transient analysis of linear and non linear circuits, logic and timing

simulations 8

Text Books:

1. Baker, Li, Boyce “ CMOS Layout, Design and simulation”, PHI publication

2. Rabaey Jan M, Chandrakasan Anantha, Nikolic Borivoje “ Digital Integrated Circuits” PHI publication

3. Kanno Kannan “ Semiconductor Devices and Physics” Wiley publication

4. Sze S.M. “ Semiconductor Physics” MacGraw Hill publication

Reference Books:

1. Millman, Halkias “ Electronic Devices and Circuits” TMH publication

2. Kamins Muller “ Device Electronics for Integrated Circuis” Wiley publication

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 3

VLSI Devices and Circuits (GEC-102)

L T P

Unit 1: 3 1 0

Properties of digital systems, regenerative property, NMOS, PMOS, pull up and pull down

networks, strong 1 and strong 0, NAND/NOR, EX-OR, Decoder, MUX,Micron and Sub-micron

devices: Scaling, Short channel effects 8

Unit 2:

Standard CMOS circuits, Pseudo NMOS, Pass Transistor Logic (PTL), types of PTL, advantages

and disadvantages of PTL, Level restorer, Transmission gate Adder/ Substractor, Design of

Combinational circuits and Sizing of MOSFETs 8

Unite 3:

Dynamic CMOS and Domino CMOS, Complex gates, Sequential Circuits: Latches & Flip-flops,

Problems of race, race around and 1’s catching 7

Unit 4:

Standard cells, Circuit implementation using PAL and PLA, FPGA, Look up tables (LUTs),

Importance of FPGA 8

Unit 5:

RAM, ROM, basic cells of SRAM and DRAM, 6T RAM, 3T RAM, 1T RAM, GaAs MESFET,

its characteristics and applications, Bi-CMOS: features, inverter, conventional and full swing

BiCMOS circuits 9

Text books:

1. Rabaey Jan M, Chandrakasan Anantha, Nikolic Borivoje “ Digital Integrated Circuits” PHI publication

2. Hodges, Jackson, Saleh “ Analysis and Design of Digital Integrated Circuits” McGraw Hill publication

3. Kang Sung-Mo, Leblebici Yusuf “CMOS Digital Integrated Circuits” Tata McGraw Hill publication

Reference Books:

1. Sedra ,Smith “ Microelectronic Circuits” Oxford Publication

2. Islam S.S “Semiconductor Devices and Physics” Oxford Publication

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 4

Microelectronics Technology (GEC-103)

L T P

3 1 0

Unit 1

Introduction: Basic structure of BJT, NMOS, CMOS, BiCMOS Devices

Crystal Growth & Silicon wafer preparation: Introduction, Structure of Semiconductor,

Electron- Grade Silicon, CZ Crystal Growth, Silicon Shaping, Processing considerations

Epitaxy: Introduction, Vapour-Phase Epitaxy, Molecular beam Epitaxy, Silicon on Insulator,

Epitaxial Evaluation 8

Unit 2

Oxidation: Introduction, Growth Mechanism and Kinetics, Thin oxidation, Oxidation Technique

and System, Oxidation Properties, Redistribution of Dopants at interface, Oxidation of

Polysilicon, Oxidation Induced Defects.

Dielectrics and Polysilicon Film Deposition: Introduction, Deposition Process, Polysilicon,

Silicon Dioxide, Silicon Nitride, Plasma Assisted Deposition. 9

Unit 3

Lithography: Introduction, Optical Lithography, Electron Lithography, X-ray Lithography, Ion

Lithography

Etching: Wet and Dry Chemical Etching, Reactive Plasma Etching

Diffusion: Introduction, Model of diffusion, in solid, Diffusivities of B, P, As and Sb,

Measurement Techniques 8

Unit 4

Ion Implantation: Introduction, Range Theory (Jon Stopping, Range Distribution, Damages,

Channeling), Annealing, Shallow Junction, High Energy Implantation.

Metallization: Chemical Vapour Deposition (CVD), Physical Vapour Deposition (PVD),

Evaporation technique, sputtering technique. 8

Unit 5

Fabrication steps of IC: Bipolar IC, MOS IC, BiCMOS IC, Fault Detection and

Characterization Technique 7

Text Books

1. SZE S M (SE) “VLSI Technology”, Mc Graw Hill International

2. Gandhi S,“VLSI fabrication principles” ,Wiley Publication

Reference Books

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 5

1. Campbell S A, “The Science and Engineering of Microelectronics fabrication” Oxford University press

2. Geiger Randall L, Allen Phillip E, Stader Noel R, “VLSI Design Technique for Analog

and Digital Circuits”, Mc Graw Hill International

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 6

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 1

II Semester

S.No Code Subject Periods Evaluation

L T P Sessional Examination Total

Subject

1 GEC 201 VLSI Design 3 1 0 50 100 150

2 GEC 202 Analog MOS Circuits 3 1 0 50 100 150

3 GEC 203 ASIC Design & FPGA 3 1 0 50 100 150

4 GEC 204 Fault Modeling & Testing

of Electronics Circuits

3 1 0 50 100 150

5 GEC 251 VLSI Design Lab 0 0 3 50 50 100

Total 12 4 3 250 450 700

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 2

VLSI Design (GEC-201)

L T P

3 1 0

Unit I

Traditional CMOS Design: System approach to VLSI design. Pseudo NMOS logic,

Transistor equivalency, CMOS logic and Gate design, Transmission Gate logic design, Delay

of MOS circuits, Basics of Low Power Design, Layout design rules and stick diagram.

7

Unit II

Advance CMOS Logic Design: Domino CMOS logic, NORA CMOS logic, Single Phase

Dynamic logic, Differential CMOS, Dynamic Differential Logic, Design of

Adders/Subtractor and Multiplexers/Decoder/Encoder/Multiplier.

8

Unit III

Sequential Circuit Design: Synchronous and Asynchronous Systems, CMOS clock Latches,

D,SR,JK,T Flip Flops, CMOS flip flop design, Synchronous design Techniques, Mely and

Moore Machines, FSM design, Design of MOS SRAM, DRAM,CMOS PROMs, EPROMs,

EEPROMs and Flash Memories.

9

Unit IV

Bipolar and BiCMOS logic Gate: Emitter coupled logic gate, Current mode logic, BiCMOS

logic gate, Alternatives BiCMOS approaches and circuits

Gallium Arsenide Digital Circuits: MESFET second order effects, Logic design with

MESFET, Capacitively enhanced logic and Heterojunction Bipolar Technology.

9

Unit V

Design of Programmable modules: Standard cells, PLA, PAL, PLDs, FPGA, Fused based

FPGA, Mixed Analog/Digital System design, Implementation using Verilog HDL/VHDL.

7

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 3

Text Books:

1. Jan.M.Rabaey, Anitha Chandrakasan, Borivoje Nikolic, "Digital Integrated Circuits", PHI,

Second Edition

2. Neil H.E Weste, Kamran Eshraghian, "Principles of CMOS VLSI Design", 2nd Edition,

Pearson, 1998

3. Ken Martin “Digital Integrated Circuit Design” Oxford Indian edition

4. Sung-Mo Kang, Yusuf Leblebici, "CMOS Digital IC- Analysis and Design", 3rd Edition,

TMH

Reference Books:

1. Douglas A Pucknell, Kamaran Eshragian, “ Basic VLSI design”, 3rd edition, PHI, 1994.

2. Wayne Wolf “Modern VLSI Design” 2nd Edition Prentice Hall 1998.

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 4

Analog MOS Circuits (GEC-202)

L T P

Unit I 3 1 0

Single Stage MOS Amplifiers: Common source stage with resistive load, Diode connected load

and Source degeneration, Source follower, Common gate stage, Cascode stage

Differential Amplifiers: Quantitative and qualitative analysis of basic differential amplifier,

Common mode response, Differential pair with MOS Loads 8

Unit II

MOS Current Mirrors: Basic current mirrors, Cascode current mirrors, Active current mirrors

Frequency Response of Amplifiers: Miller effect, Poles and zeroes, Analysis of CS, CD, CG

stage, Cascode stage and Differential pair 8

Unit III

Noise: Statistical Characteristics of Noise, Thermal noise, Flicker noise, Representation of noise

in circuits, Noise in CS, CD, CG stage, Cascode stage and Differential pair

Feedback: Properties of Feedback, Feedback topologies, Effect of loading in Feedback, Effect of

feedback on noise 8

Unit IV

Oscillators: Oscillation criterion, Ring Oscillators, LC oscillators, Voltage controlled oscillators

Phase-Locked Loop: Simple PLL, Charge-Pump PLL, Delay locked loop 7

Unit V

Operational Amplifiers: Performance parameters, One stage and two stage OpAmps, Gain

boosting, Common mode feedback, Slew rate, Power supply rejection, Noise in OpAmp,

Stability and Frequency compensation in OpAmp

Switched Capacitor Circuits: MOS as a switch, Different switched capacitors circuits,

Applications as Amplifiers, Filters, Integrators and ADC/DAC 9

Text Book:

Razavi Behzad ”Design of analog CMOS Integrated Circuits” Tata McGraw-Hill Edition,2002

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 5

Reference Book:

Gregorian R , Temes G.C. ”Analog MOS Integrated Circuits for Signal Processing” J. Wiley &

Sons,1986

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 6

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 7

Fault Modeling and Testing of Electronic Circuits (GEC-204)

L T P

3 1 0

Unit-1

Fundamentals of silicon crystal structures, orientation planes and their effects, nature and effects

of impurities like carbon, oxygen etc., Parametric problems and effects in fabrication, circuit

sensitivities 8

Unit-2

Yield, Yield loss, failure and models of failure analysis, Gate level testing’s and their fault models, chip level testing and their fault models 8

Unit-3

Introduction to five valued logic, truth table generation of standard gates, Boolean algebra, its

use and testing, Stuck-at faults 8

Unit-4

CMOS test methods, Functionality and manufacturing test principles, ATPG, Fault grading,

delay fault testing, Statical fault analysis design strategies 8

Unit-5

Functional testing, Adhoc scan based testing, self testing and IDDQ Testing, Chip level & system

level testing examples 8

Text Books:

1. Lala P.K.”Fault Tolerant and Fault Testable Hardware Design” BS Publication

2. Sze S.M. “VLSI Technology” TMH Publication

3. Weste Neil H.E., Eshraghian Kamran “Principle of CMOS VLSI Design” 2nd

ed Pearson

4. Hurst Stanley Leonard “VLSI Testing” IEEE Circuits and Devices Series

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 1

III Semester

S.No Code Subject Periods Evaluation

L T P Sessional Examination Total

Subject

1 GEC 301 Elective-I (Advanced

D.S.P.)

3 1 0 50 100 150

2 GEC 302 Elective-II (Current Mode

VLSI)

3 1 0 50 100 150

3 GEC 303 Seminar 3 - - 50 50

4 GEC 351 Project/M.Tech. -

- 6 100 - 100

Total 9 2 6 250 200 450

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 2

Advance Digital Signal Processing (GEC-301)

L T P

3 1 0

Unit 1

Discrete time signals and systems, Characterization & Classification of signals, Time domain

characterization of LTI Discrete –Time systems, Discrete –Time Fourier Transform, Discrete

Fourier Transform, Fast Fourier Transform, Z-Transform .

8

Unit 2

Design of IIR filters from Analog filters: Approximation of derivatives, Design of IIR filter

using impulse invariance technique, Design of IIR filter using bilinear transformation, matched

z-transform.

Realization of Digital Filters: Direct form I and II realization, signal flow graph, Cascade form

and Parallel form structure.

8

Unit 3

Design of FIR Filters using windows: Rectangular window, Triangular window, Hanning

window, Hamming window, Blackman window and Kaiser window .

Realization of FIR Filters: Transversal structure, Linear phase realization and Polyphase

realization of FIR filter.

8

Unit 4

Multirate Signal Processing: Introduction Down Sampling, Spectrum of the Down Sampled

Signal, Upsampling, Spectrum of the Up-sampled, Transversal Structure for Decimator and

Interpolator, Multistage Implementation of Sampling Rate Conversion.

8

Unit 5

Statistical Digital Signal Processing: Introduction,Statistical Properties of Random Signal, mean,

mean square, variance, autocorrelation of random process, autocovariance of random process,

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 3

Crosscorrelation of random processes and Crosscovariance of random processes, Power Density

Spectrum.

8

Reference Books:

1. Sanjit K.Mitra,’’Application DSP a Computer based approach’’,TMH

2. Allan Y.Oppenhem & Ronald W.Schater,’’Digital Signal Processing’’,PHI

3. S.Salivahanan,A.Vallavaraj & C.Gnanapriya,’’Digital Signal Processing,TMH

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 4

Current Mode VLSI Circuits & Applications (GEC-302)

(Elective-II)

L T P

3 1 0

Unit I

Voltage Mode/Current Mode Overview: Comparison of Digital & Analog principles & systems,

Voltage Mode /Current Mode circuit principles,Comparison, Advantages of current mode circuits,

BJT, MOSFET and their analog models, power and fT considerations.

7

Unit II

Current mode operations: Current Mirror, Its Types(Simple cascade, high swing, regulated) and thier

performances, Translinear principle in BJT and MOS (Subthreshold and ohmic regions), Analog

switches, Differential pair and its DC/AC characteristics, Logic function realization & latches,

Multipliers.

8

Unit III

Transcondutance Amplifiers: Differential pair gm cell, fixed gain gm cell, linearized gain gm cell,

multiple differential pair gm cell, CMOS gm cell, Ohmic transistor gm cell, fixed and variable bias gm

cells, Active transistor gm cell, OTA structures and its applications.

8

Unit IV

Current conveyors(CC): Classification and generations of CCs, characteristic features, CC as analog

building block, design considerations with CC, circuit realization of CC’s, Translinear CC, I order

BJT CCI, class AB CCI, CMOS CCI, CMOS CCII, differential pair based CC cells, ±CC circuits,

MOCC, multi-X/multi-Y CCs, CCIII realization, UCC, GCC, Fully differential CMOS CCII, CC

applications.

9

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 5

Unit V

Switched current techniques and applications: Switched capacitor and switched current techniques,

switched current (SI) principle, SI building blocks: Switch, Current copier, Current comparator, I

and II order integrators, Bilinear integrator, Memory cell, Multiplier applications.

8

Text Books:

1. Liu, Kramer,Indeveri,Delbruck,Douglas“Analog VLSI: Circuits and Principles”, Pearson,

Education India

2. Ananda Mohan “Current Mode VLSI Analog Filters” Springer, Anne Books, India

3. Giuseppe Ferri, Nicola Carlo Guerrini “Low-voltage low-power CMOS current conveyors”

Springer

Reference Books

1. M Ismail and Terri Fiez “Analog VLSI: Signal and Information Processing” McGraw Hill.

2. R.J.Baker “CMOS: Circuit Design, Layout, and Simulation” 3rd Ed, Wiley, IEEE Press

3. C.toumazou, F.J.Lidgey, D.G.Haigh“Analog IC design: the current mode approach” IEE

circuits and systems series-2

4. Edgar Sánchez-Sinencio, Andreas G. Andreou “Low-voltage/low-power integrated circuits

and systems: low-voltage mixed-signal circuits” IEEE Solid-State Circuits Society

M.Tech Electronics Circuit & System (Full Time)

ECE Department, Faculty of Engineering, Integral University, Lucknow Page 1

IV Semester

S.N

o

Code Subject Periods Evaluation

L T P Sessional Examination Total Subject

1 GEC

451

Project/M.Tec

h.

-

- 12 200 200 400

Total - - 12 200 200 400