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Complex Permittivity of Dielectric Materials with
Periodic Discontinuities
A dissertation submitted to The University of
Manchester for the degree of Master of Science in the
Faculty of Engineering and Physical Sciences
2009
Muhammad Omer FAROOQ.
Student ID: 7367100
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Table of Contents
Table of Contents
Section Page Number
List of Figures……………………………………………………………....4
List of Tables………………………………………………………………..7
Abstract………………………………………………………………........11
Declaration………………………………………………………..……….12
Copyright………………………………………………………………….12
Acknowledgements………………………………………………………..13
Abbreviations……………………………………………………………...14
Symbols……………………………………………………………………16
1. Introduction............................................................................................18
1.1. Aims and Objectives of the project…...…….……………......…….20
2. Literature Review……………………………………………………...22
3.
Back-Ground Theory………………………………………..………...26
3.1. Dielectrics, Polarization and Permittivity…………..………...........26
3.1.1. Basic Concept of Polarization………………………………..27
3.1.2. Dipole in Time Harmonic Field………………………………29
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Table of Contents
3.4.2. TM Mode…………………………………………...………...40
3.5.
Scattering by Conducting Wedge……………...……….………….42
3.6. Maxwell-Garnett Mixing Theory…………………....……...……..43
3.7. S-Parameters...…………………………………………...………..44
4. Extraction of Complex Permittivity from S-Parameters…………...47
4.1. Two Independent Ways of Obtaining S-Parameters…………........47
4.2. Conversion of Scattering Matrix to ABCD Matrix………………..48
4.3. Example of 4-Layer Problem……………………………………...49
4.4. Deembedding of ABCD Matrix of Profiled Layer………...………50
4.5. Calculation of Complex Permittivity of Profiled Layer from its
ABCD Matrix………………………………….................................51
4.6. Software Used for the Calculation of Complex Permittivity……...53
5.
HFSS Simulation and Its Results..........................................................54
5.1. Introduction to the Software…………...…………………………..54
5.2.
Technique Used………………………………………………........54
5.2.1. The Finite Element Method…………………………………..54
5.2.2. Size of Mesh vs. Accuracy……………………...………........55
5.3. Meshing and its Effect on Simulation Results…...………………...55
5.3.1. General Observation during the simulation…………………..55
5.4. Developing the Model in HFSS and Results….……………….......56
5.4.1. Slots…………………………………………………………..57
5.4.2. 60 Degree Grooves…………………………………………...61
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Table of Contents
6.4. Different Sizes and Shapes of the Interface……………..…..…….73
6.4.1.
Rectangular slots…………………………………………......74
6.4.2. 60 Degrees Grooves………………………………………….76
6.4.3. 90 Degree Grooves……………………………………….......77
6.4.4. 120 Degree Grooves………………………………………….78
6.5. Previously Obtained Experimental Results and Problems with
Them……………………………………………………………….80
6.6. Technical Difficulties ……………...……………………………...82
6.7. Steps Involve in this Method ..........................................................83
6.8. Experimental Results……………………………………...………84
7.
Conclusions and Empirical Formulae Derived……………………..92
8. Reference..............................................................................................108
Appendix A Calibration of VNA…................................................................................111
Appendix B Already Known Experimental Results …………………………………..113
Appendix C Example for the Calculation of Complex Permittivity…………………...114
Appendix D C++ Programs Used for calculation of Complex Permittivity ……..........116
Appendix E Simulation Results………………………………………………..............126
Appendix F Experimental Results….………………………………………………….160
Appendix G Datasheet of Perspex….………………………………………………….180
Appendix H Why ( )*Im ε of experimental results are positive in number of
cases………………..................................................................................182
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List of Figures
List of Figures
Figure__ Page Number
Chapter-3
Figure-3.2.1 Polarization of non polar molecule in electric field……………………………27
Figure-3.2.2 Atomic dipole model.........................................................................…...............31
Figure-3.2.3 Oscillation of the electron about the nucleus……………………………………31
Figure-3.2.3 Plot of the real and imaginary parts of the resonant susceptibilityres
χ …………34
Figure-3.5.1 Standard rectangular wave guides……………………………………………….39
Figure-3.5.2 Rectangular Waveguide………………………………………………………….40
Figure-3.6.1 Electric line source near a two dimensional conducting wedge, reference at
bisector………………………………………………………………………...…42
Figure-3.7.1 An arbitrary N-port microwave network..........................................................…..46
Chapter-4
Figure-4.2.1. A two port network……………………………………………………………...48
Figure-4.3.1. 2 and 4-Layer Problem with the plane of calibration specified in each case……49
Chapter-5
Figure-5.4.1. 4-Layers of the problem with specified dimension used in simulating each
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List of Figures
Figure-6.1.3 5.8mm thick Cell which hold the sample inside the waveguide…………………71
Figure-6.1.4 Actual practical setup for the measurement of S-parameters…………………….72
Figure-6.2.1. Perspex prepared sample placed on the cell……………………………………..73
Figure-6.4.1. Picture of rectangular slots used………………………………………………...75
Figure-6.4.2. Profile layer having regular, periodic and rectangular grooves…………………75
Figure-6.4.3. Picture of all the samples of 60 Degrees Grooves………………………………76
Figure-6.4.4. Profile layer having regular and periodic grooves and discontinuities………….77
Figure-6.4.5. Picture of all the samples of 90 Degrees Grooves………………………………78
Figure-6.4.6. Profile layer having regular and periodic grooves and discontinuities………….78
Figure-6.4.7. Picture of all the samples of 120 Degrees Grooves……………………………..79
Figure-6.4.8. Profile layer having regular and periodic grooves and discontinuities with
dimensions……………………………………………………………………….80
Figure-6.5.1. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 6GHz. In addition to this the Maxwell-Garnett mixing
curve is also plotted which is independent of frequency………………………...82
Figure-6.5.2. Plot of real part of complex permittivity for slots and grooves of different angles
and material fill factor at 8GHz In addition to this the Maxwell-Garnett mixing
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List of Figures
Figure-7.2. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 8GHz for the case of
slots………………………………………………………………………………95
Figure-7.3. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 60 degree
grooves…………………………………………………………………………...98
Figure-7.4. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 60 degree
grooves…………………………………………………………….......................98
Figure-7.5. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 90 degree
grooves……………………………………………………..…………………...101
Figure-7.6. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 90 degree
grooves………………………………………………………………………….101
Figure-7.7. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
mixing rule and amended Maxwell-Garnett rule at 6GHz for the case of 120
degree grooves………………………………………………………..………...103
Figure-7.8. Plot of real part of complex permittivity using experimental data, Maxwell-Garnett
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List of Tables
List of Tables
Chapter-3
Table 3.5.1: Characteristics of the rectangular wave guide…..…………………………...…...41
Chapter-5
Table-5.4.1. Complex permittivity of slots with 1.4mm pitch…..……………………………..58
Table-5.4.2. Complex permittivity of slots with 1.7mm pitch…..………………………..........58
Table-5.4.3. Complex permittivity of slots with 2.0mm pitch…..………………………..........58
Table-5.4.4. Complex permittivity of slots with 2.0mm pitch, with depth of 0.577mm………59
Table-5.4.5. Complex permittivity of slots with 2.5mm pitch…..……………………..............59
Table-5.4.6. Complex permittivity of slots with 3.0mm pitch…..………………..……………59
Table-5.4.7. Complex permittivity of slots with 4.0mm pitch…..………………………..........60
Table-5.4.8. Complex permittivity of slots with 4.5mm pitch…..………………………..........60
Table-5.4.9. Complex permittivity of slots with 5.0mm pitch…………………………............60
Table-5.4.10. Complex permittivity of 60 degree grooves having1.2mm pitch……………….61
Table-5.4.11. Complex permittivity of 60 degree grooves having1.3mm pitch……………….61
Table-5.4.12. Complex permittivity of 60 degree grooves having1.4mm pitch……………….62
Table-5.4.13. Complex permittivity of 60 degree grooves having1.7mm pitch………….........62
Table-5.4.14 Complex permittivity of 60 degree grooves having 2.0mm pitch……………….62
Table-5.4.15 Complex permittivity of 60 degree grooves having 2.5mm pitch……………….63
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List of Tables
Table-5.4.22 Complex permittivity of 90 degree grooves having 5.0mm pitch……………….65
Table-5.4.23 Complex permittivity of 90 degree grooves having 6.0mm pitch……………….66
Table-5.4.24 Complex permittivity of 120 degree grooves having4.0mm pitch………………66
Table-5.4.25 Complex permittivity of 120 degree grooves having 4.5mm pitch……………...67
Table-5.4.26 Complex permittivity of 120 degree grooves having 5.0mm pitch……………...67
Table-5.4.27 Complex permittivity of 120 degree grooves having 6.0mm pitch……………...67
Table-5.4.28 Complex permittivity of 120 degree grooves having 7.0mm pitch……………...68
Table-5.4.29 Complex permittivity of 120 degree grooves having 8.0mm pitch……………...68
Chapter-6
Table-6.4.1. Slots of different sizes pitches and air fill factor…………………………………74
Table-6.4.2. Grooves with 60 degree angle with different pitches and air fill factor. ………...76
Table-6.4.3. Grooves with 90 degree angle with different pitches and air fill factor………….77
Table-6.4.4. Grooves with 120 degree angle with different pitches and air fill factor………...79
Table-6.8.1. Measured values of Complex permittivity for the case of slots with 4.0mm
pitch………………………………………………………………………………84
Table-6.8.2. Measured values of Complex permittivity for the case of slots with 4.0mm
pitch………………………………………………………………………………84
Table-6.8.3. Measured values of Complex permittivity for the case of slots with 4.0mm
pitch………………………………………………………………………………85
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List of Tables
Table-6.8.7. Measured values of Complex permittivity for the case of 60 degrees grooves with
1.3mm pitch……………………………………………………………………87
Table-6.8.8. Measured values of Complex permittivity for the case of 60 degrees grooves with
2.5mm pitch……………………………………………………………………87
Table-6.8.9. Measured values of Complex permittivity for the case of 60 degrees grooves with
3.0mm pitch……………………………………………………………………87
Table-6.8.10. Measured values of Complex permittivity for the case of 90 degrees grooves
with 2.0mm pitch………………………………………………………………88
Table-6.8.11. Measured values of Complex permittivity for the case of 90 degrees grooves
with 4.0mm pitch………………………………………………………………88
Table-6.8.12. Measured values of Complex permittivity for the case of 90 degrees grooves
with 5.0mm pitch………………………………………………………………89
Table-6.8.13. Measured values of Complex permittivity for the case of 90 degrees grooves
with 6.0mm pitch………………………………………………………………89
Table-6.8.14. Measured values of Complex permittivity for the case of 120 degrees grooves
with 4.0mm pitch………………………………………………………………89
Table-6.8.15. Measured values of Complex permittivity for the case of 120 degrees grooves
with 5.0mm pitch………………………………………………………………90
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List of Tables
Chapter-7
Table:-7.1. Values of the real pert of complex permittivities for the case of slots obtained from
Experiments, Maxwell-Garnett mixing rule and from Amended Maxwell-Garnett
formula at 6GHz and at 8GHz…………………………………………………...94
Table:-7.2. Values of the real pert of complex permittivities for the case of 60 degrees grooves
obtained from Experiments, Maxwell-Garnett mixing rule and from Amended
Maxwell-Garnett formula at 6GHz and at 8GHz………………………………..97
Table:-7.3. Values of the real pert of complex permittivities for the case of 90 degrees grooves
obtained from Experiments, Maxwell-Garnett mixing rule and from Amended
Maxwell-Garnett formula at 6GHz and at 8GHz……………………….………100
Table:-7.4. Values of the real pert of complex permittivities for the case of 120 degrees
grooves obtained from Experiments, Maxwell-Garnett mixing rule and from
Amended Maxwell-Garnett formula at 6GHz and at 8GHz……………………102
Table-7.5 Amended Maxwell-Garnett formulae in the different cases…………………..…..104
Table-7.6 Comparison between simulation results and experimental one…………………...105
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Abstract
Abstract
When a waveguide cell is used to measure the complex permittivity of granular
material, such as wheat grains then errors are introduced because or the irregular interface
caused by the grain. This non-planer interface causes difficulties in measuring the complex
permittivity and introduces errors. In order to understand the phenomenon this project
includes designing, fabricating, testing and modelling a range of periodic discontinuous
surfaces around a wave guide cell with the intention of measuring S-parameters of such
interfaces using a Vector Network Analyser (VNA). From these measurements the complex
permittivity is calculated using a technique called deembedding of the characteristic (ABCD)
matrix of the profiled layer. The approach taken is to fabricate the samples and use the
available test equipment in MACS group material measurement laboratory. Samples were
loaded into the rectangular wave guide (WG-14) cell and the S-parameters were measured
using a VNA and complex permittivity was extracted using a C++ program, which uses the
mathematical technique of deembedding the ABCD matrix for the profiled layer and the
theoretical background of the waveguide theory. In addition the 3-D problem was also
modelled using a commercial software HFSS for different shapes and depth of the profiled
layer. The simulated and experimental results compared well. The outcomes of this project are
a modified Maxwell-Garnett model and methods for estimating the complex permittivity of
periodic interface surfaces as a function of the geometry of the profiled layer.
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Deceleration
Declaration
No portion of the work referred to in the dissertation has been submitted in support of
an application for another degree or qualification of this or any other university or
other institute of learning.
Copyright
1. Copyright in text of this dissertation rests with the author. Copies (by any
process) either in full, or of extracts, may be made only in accordance with
instructions given by the author. Details may be obtained from the appropriate
Graduate Office. This page must form part of any such copies made. Further
copies (by any process) of copies made in accordance with such instructions
may not be made without the permission (in writing) of the author.
2. The ownership of any intellectual property rights which may be described in
this dissertation is vested in the University of Manchester, subject to any prior
agreement to the contrary, and may not be made available for use by third
parties without the written permission of the University, which will prescribe
the terms and conditions of any such agreement.
3. Further information on the conditions under which disclosures and
exploitation may take place is available from the Head of the School of
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Acknowledgements
Acknowledgements
I would like to express my sincerest gratitude to my supervisor Professor Andrew Gibson, to
whom I will always be indebted, for his inestimable help and guidance through out the MSc
course and during the dissertation stage.
I would also like to extend my deepest appreciation to Dr. Arthur D Haigh for taking interest
in this project and guiding me at all the time when I needed.
I am thankful to the people working in the workshop on the D-floor of Sackville Street
Building (SSB) for making the samples in time and the precision of the samples.
In the end I would like to thank my parents for their unconditional support particularly my
mother who called me daily from Pakistan, to pray for my success and keeping my moral up
without telling about her health which is not good, so that I can concentrate on my studies.
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Abbreviations
Abbreviations
2D Two dimensional
3D Three Dimensional
AFF Air Fill Factor
CP Complex Permittivity
CPF Coherent Potential Formula
DC Direct Current
DUT Device under Test
EM Electromagnetic
EMA Effective Medium Approximation
EWS Electromagnetic Wave Scattering
FDTD Finite Difference time domain
FEM Finite Element Method
GTD Geometrical Theory of Diffraction
HM Hybrid Mode
HFSS High Frequency Structure Simulator
MG Maxwell-Garnett
MMA Methacrylate monomer
MMIC Monolithic Microwave Integrated Circuit
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Abbreviations
TEM Transverse electromagnetic mode
TM Transverse magnetic mode
VDU Visual Display Unit
VNA Vector network analyser
VSWR Voltage standing wave ratio.
WG Waveguide
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Symbols
Symbols
eff ε = effective permittivity.
0ε = Absolute permittivity of free space.
*ε = Relative complex permittivity.
r ε = Relative permittivity.
ε ′ = Real part of complex permittivity.
ε ′′ = Imaginary part of complex permittivity
f M f = = Material fill factor.
f
A = Air fill factor.
P
= Macroscopic polarization vector.
p
= Dipole moment.
e χ = Electric susceptibility.
res χ = Susceptibility at resonance.
e= Electronic charge.
m = Mass of electron.
d γ = Damping factor.
ω = Angular frequency.
I = Electric current.
V = Voltage
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Symbols
σ = Electric conductivity.
t
E = Tangential component of electric field.
t H = Tangential component of magnetic field.
β = Phase constant.
ck = Cut-off wave number.
k = Wave number.
λ = Free space wavelength.
cλ = cut-off wavelength.
gλ = Guide wavelength.
pv = Phase velocity.
d α = Attenuation constant.
( )δ tan = Loss tangent.
+nV = Amplitude of the voltage wave incident on port “n”
−
nV = Amplitude of the voltage wave reflected from port “n”
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Introduction
1. Introduction: -
Microwave processing is a field of increasing importance and is receiving more attention
particularly in processing materials with a broad range of compositions, sizes and shapes. In
recent years, microwave processing research and development have been expanded into many
new areas such as calculation and measurement of the complex permittivity of materials like
ceramics, polymers, composites, and chemicals as a function of frequency and temperature.
For example it was shown that the complex permittivity of material must be known to control
the microwave processing of ceramics ]23[ . The real and imaginary parts of the complex
permittivity, ε ′ andε ′′ respectively are parameters that describe the behaviour of a dielectric
material under the influence of a microwave field. Both affect the power absorbed and the
half-power depth. They also describe how microwaves penetrate and propagate through an
absorbing material, reflect and scatter from the dielectric material, and influence the
volumetric heating of a given material.
So complex permittivity of the material determines not only electrical but also affects the
thermal performance of the material and in general it is a function of frequency and
temperature, hence it is very important to measure this electrical property of materials to
characterize them. Knowledge of complex permittivity of the materials at microwave
frequency is a very important in the description of their physical and chemical properties. It is
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Introduction
permittivity of water is very high (according to Cole-Cole equation it is approximately “-10”
at 30 degree centigrade) hence there is lot of electrical energy is being converted in to heat
energy in water at this frequency. As almost all the food contains water hence all microwave
ovens are designed at the above mentioned frequency in order to heat the food stuff. Also to
dry wheat grain and medicines in pharmaceutical industry using microwave techniques as
they may contain water contents hence the frequency of applied electromagnetic wave is so
adjusted to have the maximum heating effect (or loss) that is at that frequency the imaginary
part of the complex permittivity is maximum in magnitude. This needs the complete
knowledge of the complex permittivity of water as a function of frequency. Some more
includes electrosurgery in which the internal bleeding from the tiny blood vessels can be
stopped and diathermy which is the way of making the muscles of human body relaxed using
electrically induced heat shows the importance of the measurement of complex permittivity
and its trends with the frequency.
Often in practice, when particular materials have to be characterized using microwave
technique it is necessary to go through some sample preparation and in order to extract the
complex permittivity from the calibrated measurement setup. Real materials used in industrial
and food processing, frequently came in particulate (powder) form. For example in agro
chemicals, pharmaceutical and food processing industries pallets and grains occur frequently.
These type of granular materials are the most difficult to prepare the experimental
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Introduction
In this project we have designed the systematic approach to understand the irregular interface
problem. These irregularities are implemented in the form of grooves and slots of different
dimensions angles and fill-factor (which depends upon the pitch of grooves or slots) on a
Perspex layer (material used in this work) which is then loaded in a rectangular wave guide
cell (WG-14) to measure S-parameters by using Vector Network Analyzer (VNA). For the
deeper understanding of the problem simulations of the profiled layers in the rectangular
waveguide are performed on commercial software HFSS to get S-parameters. Then these S-
parameters are used to calculate complex permittivity of the profiled layer using a technique
called “Deembedding a characteristic matrix” using the complex permittivity of the Perspex
layer which is calculated to be 02.062.2* j−=ε used the S-parameters which are taken from
the VNA and the length of the layers. It is demonstrated that the approximate formulae like
Maxwell-Garnett equations produces a close fit with very small error to measured and
simulated effective permittivity for the case of slots. Different angles like 60, 90 and 120
degrees of grooves produces different scattering patterns results in different complex
permittivity does not seems to obey original Maxwell-Garnett mixing rule. Hence 8 new
different formulae are calculated here empirically using the numerical techniques which uses
matrix algebra to solve homogeneous simultaneous linear equations and experimental data for
different shapes of discontinuities (slots and grooves). Out of the 8 different formulas 4 are
valid at 6GHz and the others 4 formulae are valid for 8GHz. There are some interesting
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Introduction
2) Exploration of the microwave measurement techniques.
3)
Understanding the concept of ray tracing.
4) Familiarization with software like “High frequency Structure simulator” (HFSS)
which is very sophisticated three dimensional electromagnetic simulation tool.
5) Familiarization with the operation and working of vector network analyzer (VNA).
6) Finally the most important objective of this project is the development of model to
estimate the complex permittivity of 2-phase dielectric medium with regular and
periodic discontinuities by loading them in a rectangular waveguide cell (WG-14).
The project was very challenging and informative. It provide lot of inside and knowledge
about electromagnetic wave theory and electromagnetic wave scattering and because of this
the change in the complex permittivity of the profiled layer.
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Literature Review
CHAPTER No 2
2. LITERATURE REVIEW
The history of microwave measurement of the complex permittivity of the heterogeneous
mixture and discontinuous interface problem and their electromagnetic analysis is very old.
There are number of different mixing formulas some of them are empirical. Analytical
formulas are also available for the calculation of complex permittivity for example those
derived by Tischer ]24[ . In addition to this there are number of different experimental
measurement techniques available for determining the complex permittivity of a material. The
choice of measurement technique depends on number of factors like frequency range, sample
size restriction, expected value of complex permittivity, conducting and non-conducting
nature of the samples, required measurement accuracy, physical conditions of measurements
like temperature and pressure, material properties like homogeneous or isotropic, cost and
form of material like liquid or powder ]7&4,3,1[ .
One of the methods used for the measurement of complex permittivity is the transmission line
technique which is used in this project. This technique was first introduced by Tischer ]24[ .
Tischer describe the method of measurement of electromagnetic properties of plasma in
section of wave guide as a test section. This approach has the advantage that it has the
l ti l l ti b id i th bl b d l bl Ti h i hi
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Literature Review
and it requires high resolution from the instrumentation. Open ended co-axial probe
techniques require no sample preparation; it is broad band, simple and convenient, ideal for
lossy materials and used particularly for liquid and sami-liquid materials. In the free space
technique the complex permittivity of the material is computed for the measurement of
transmission co-efficient and reflection co-efficient. It is a convenient technique for non
conducting materials, best for hostile environments like high temperature and pressure, good
for on-line microwave measurements and useful for large and flat materials.
Calculating or predicting the effective response of an inhomogeneous medium or discontinues
interface problem to incident electric and magnetic excitation is a complex and interesting
problem. It requires the careful and rigorous electromagnetic and polarizability analysis of the
material. Many different mixing rules have been suggested ]29[ in addition to the Maxwell
Garnett Theory ]1[ . For different classes of materials formulas are developed which predict the
value of complex permittivity. Chiral]30[
and the other magneto-electric]31[
mixing rules have
appeared in literature in the recent past. These are the deduction from the Maxwell Garnett
paper which was published in 1904. Sihvola ]6[ gave the mixing formula to estimate the
macroscopic properties of the heterogeneous two phase mixture by treating one of the
components as a background medium and the other one as inclusions. These inclusions are
assumed to be spherical and randomly distributed through out the background medium. The
simplest dielectric mixing formula for the effective permittivity effε is named after Maxwell
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Literature Review
Maxwell-Garnett expression that accounts for the density fluctuations of the second medium
on the background medium was given. Sihvola[ ]6
states that “Maxwell-Garnett (MG) mixing
rule has been widely used in dielectrics studies but critics say that it fails to predict the
behaviour of mixtures with high volume fractions or large dielectric constant between the
components”, and agreement with this observation is one of the conclusions of this project
dissertation.
As the large community of scientists don’t believe in the complete validity of Maxwell-
Garnett mixing rule, thus other mixing formulas are also been suggested which can predict the
value of complex permittivity of the mixture of mediums. In ]32[ , a family of mixing rule has
been presented according to the following
( ) ( )oeff o
o
oeff oeff
oeff f
ε ε ν ε ε
ε ε
ε ε ν ε ε
ε ε
−++
−=
−++
−
22 (2.2)
where the additional dimensionless constant parameters “ν ” determines the nature of mixing
rule. For 0=ν in equation (2.2) reduces to Maxwell-Garnett rule equation (2.1). Sihvola in
his paper [ ]6 summarized some of mixing formulas in these words, “Other integer values for ν
gives other well known mixing rules. The value 3 gives the so called coherent potential
formula (CPF). In solid state physics, CPF is known as the GKM rule after Gyorffy, Korrings
and Mills. Correspondingly, 2=ν gives the Bottcher mixing rule [ ]33 . In remote sensing
[ ]34
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Literature Review
In this project complex permittivity is measured experimentally for different shapes and
discontinuities of Perspex layers which can be consider homogeneous mixtures of Perspex
and air. An empirical formula is developed for complex permittivity of the mixture of Perspex
and air at 6GHz and 8GHz as a function of material fill factor (MFF) denoted by f M or f
which is defined as the ratio of the volume of inclusion (material) to the total volume of the
mixture. Finally this formula is related to equation (2.2) mentioned in ]32[ and value of ν are
calculated for different cases.
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CHAPTER No 3
3. BACKGROUND THEORY
This chapter includes the background theory needed to understand the work done in this
dissertation project which includes the revision of electrical properties of materials like
polarization, permittivity and concept of complex permittivity. Waveguides, different modes of
electromagnetic waves and Maxwell-Garnett theory is also given here briefly. Finally the
importance and the theory of S-parameters are discussed. For very basic electromagnetic
theory, the reader can go to the references at the end and the appendices.
3.1. Dielectrics and Polarization
All the materials are made up of atoms or molecules, to understand the behaviour of the
material in the electric filed, it is batter to understand the behaviour of atoms and molecules in
electric field.
There are two types of molecules
1) Non-Polar
2) Polar
Following is the description of the behaviour of these two types of molecules in the time
independent and time dependent electric field.
Electric dipole is induced in the non-polar molecule if it is placed in the static electric field
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2. The entire polarized molecules align themselves parallel to each other and to oppose
the applied electric field.
The following Figure-3.2.1 explains the phenomenon of polarization.
Figure-3.2.1 Polarization of non polar molecule in electric field
In case of the polar molecules in weak electric field only alignment takes place such that the
electric field of the molecule is in opposite direction to that of applied field. At high electric
field the separation between positively charged centre and negatively charges electronic cloud
tends to increase and as the result electric potential energy is stored in the dielectric material
against the applied electric field. This separation increases with the increase in the magnitude
of the applied electric field and when the magnitude of electric field reduces it reduces. But
this happen in some specified range of the magnitude of applied electric field which is
determined by the material. If the electric field of high magnitude is applied so that the
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positive and negative charges against the Coulombs force of attraction and hence produces an
array of microscopic dipoles. These charges are known as bound charges. The molecules can
be arranged in an ordered and predictable manner or may exhibit random positioning and
orientation, as would occur in an amorphous material or a liquid depending upon the nature of
the material and the applied field. The molecule may or may not exhibit permanent dipole
moments (existing before the field is applied), and if they do, they will usually have random
orientations throughout the material volume. The macroscopic polarization vector P
rises
because of the displacement of the charges is defined as the dipole moment per unit volume
and is given mathematically as
∑∆×
=→∆ ∆
=
v N
i
iv
pv
limP0
0
1 (3.1.1)
Where,
v∆ = Very small volume ( 3m ).
N = Total number of dipoles in the volume v∆ .
i p
= Dipole moment of thi molecule/atom (C.m) which is defined as iii d Q p
×= , Where “ iQ ”
is the positive charge out of the two bound charges in thi molecule/atom and “ id
” is a
vector quantity whose magnitude is the distance between the positive and the negative
charges within a molecule/atom and directed towards the positive charge from the
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E P e
χ ε 0= (3.1.2)
Where the electric susceptibility, e χ is the very interesting part of the dielectric constant, and
can be related to this as
er χ ε +=1 (3.1.3)
Therefore to understand the concept and nature of the dielectric constant “ r ε ” we have to
understand the concept and nature of the electric susceptibility “ e χ ” this finally helps us to
understand the behaviour of the polarization P
.
3.1.2. Dipole in the time harmonic field
To understand the concept of the behaviour of the electric dipole in the time harmonic field
that is propagating as a wave through the material one has to go deep into the concept of
polarization and the phase difference between E
and D
field. The result of applying time
dependent E
on dielectric material is oscillating dipole moments are setup, and these in turn
establish a polarization wave that propagates through the material. The effect is to produce
the polarization function ( )t zP ,
, having the same functional form as the field ( )t z E ,
which
produces this. The atoms/molecules don’t move physically throughout the material, but their
oscillating dipole moments collectively exhibit wave motion. This is very important and deep
understanding of wave phenomenon in dielectric. We can form a basic qualitative
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which interact with the next dipole. Radiation from this dipole adds to the previous field as
before and the process repeats from dipole to dipole. The net phase shift at each location
results in the slowing down the phase velocity of the resultant wave. Attenuation of the field
is accounted in the classical model by the partial phase cancellation between the incident and
the radiated fields.
3.2. Complex Permittivity ]13[
3.2.1. The Classical Spring Model
In the classical model, the dielectric mediums are the collection of the identical and fix
electron oscillators, in which Coulombs force of attraction is modelled as the spring between
the electronic cloud and the nuclei. Following Figure3.2.2 shows the single oscillator located
at the position “ z ” in the material and oriented in the x-axis. A uniform plane wave, assumed
to be linearly polarized along “ x ”, propagates in the material in the “ z ” direction. The
electric field in the wave displaces the electron of the oscillator in the x -direction through a
distance represented by the vector d
; a dipole moment is thus established,
( ) ( )t zd et z p ,,
×−= (3.2.1)
Where the applied force is given by
( ) ( )t z E et zF a ,,
×−= (3.2.2)
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phase differences between oscillators is accurately determined by the spatial and temporal
behaviour of ( )t z E ,
.
d k forcerestoring
vm forcedamping
E e forcent displaceme
s
d
−=←
−=←
−=→
γ
Figure-3.2.2: - Atomic dipole model with Coulomb force between
positive and negative charges modelled by that of a spring having spring
constant “ sk ”. An applied electric field displaces the electron through
distance “ d ”, resulting in a dipole moment d e p
×−=
The restoring force on the electron r F
is that produced by the spring which is assumed to obey
Hook’s Law:
( ) ( )t zd k t zF sr ,,
−= (3.2.3)
Where, “ sk = Spring constant (not the propagation constant).
The negative sign shows that the restoring force is in opposite directions to that of the
displacement of the electron from the mean position which is the nucleus in this case. If the
field is turned off the electron is released and will oscillate (as shown in the Figure3.2.3
below) about the nucleus at the resonant frequency, given by the following expression
( ) ( )
k
t zd mt zd k
maF
s
r
=⇒
=
2
0 ,, ω (3.2.4)
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( ) ( )t zvmt zF d d ,,
γ −= (3.2.5)
Where ( )t zv , is the velocity of the electron at the position “ z ” and at time “ t ”.
Dephasing is a very important process which is completely associated with the damping in the
electron of the oscillator in the system. Their relative phasing, once fixed by the applied
sinusoidal field, is destroyed through collisions and dies away exponentially until a state of
totally random phase exists between oscillators.
By applying the Newton second law of motion and write down the vector sum of all the
forces (damping, applied and restoring) equal to the product of the mass of the electron and its
acceleration,
ccsc
d c
d r a
E ed k t
d m
t
d m
F F F am
−=+∂
∂+
∂
∂⇒
++=
γ 2
2 (3.2.6)
Where “ c E
” is the complex form of the electric field at point ( )t z, which includes applied
and radiated field as discussed already. Its general form is given as
t j jkz
c ee E E ω −
= 0
(3.2.7)
As the system is being excited by complex Electric field “ c E
”, one can anticipate a
displacement wave “ cd
” of the form
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( )( ) ( ) t j jkzt j jkzs
t j jkz
d
t j jkz ee E eeed k eed jmeed j jm ω ω ω ω ω γ ω ω −−−− −=++ 0000
(3.2.10)
Dividing by t jme ω , and putting jkzs ed d
−= 0
, jkzs e E E −
= 0
andm
k s=2
0ω the simplified version
of this equation is
[ ]sd s E
m
e jd
−=++−
2
0
2 ω ωγ ω (3.2.11)
Making sd
as subject, the resulting equation takes the form,
( )( )[ ] s
d
s E j
me
d
ωγ ω ω +−
−=
22
0
(3.2.12)
The dipole associated with the displacement “ sd
” is
ss d e p
×−= (3.2.13)
The polarization vector of the medium can be found by assuming that all the dipoles are
identical
sss d eN p N P
×−=×= (3.2.14)
( )[ ] sd
s E j
me N
P
ωγ ω ω +−=⇒
22
0
2
(3.2.15)
Comparing this equation with the 3 2 2 we get the susceptibility at resonance as
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Where
( )( )[ ]
( )
( )[ ]22222002
222
22
00
220
2
d
d res
d
res
m
Ne
m
Ne
γ ω ω ω ε
ωγ χ
γ ω ω ω ε
ω ω χ
+−
=′′
+−
−=′
(3.2.18)
Now, the real and imaginary parts of the permittivity can be found through the real and
imaginary parts of “ res χ ”.
( ) ( ) ( ) resresresresres j j j χ ε χ ε χ χ ε χ ε ε ε ε ′′−′+=′′−′+=+=′′−′= 0000 111 (3.2.19)
Thus it is clear that
( )
res
res
χ ε ε
χ ε ε
′′=′′
′+=′
0
0 1 (3.2.20)
The plot of the real and the imaginary parts of complex susceptibility is shown in Figure
3.2.3.
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The important points to note in the plot are the symmetric behaviour of the “ res χ ′′ ” about
“ 0ω ω = ” whose full- width at its half-maximum amplitude is “ d γ ”. Near the resonant
frequency where res χ ′′ become maximum, so the wave attenuation is at the peak. There is a
still significant variation of “ res χ ′ ” with frequency away from resonance, which leads to the
frequency.
3.2.2. Limitation of the Classical Model
Here it is important to mention that this model which is based on the “Classical Physics”
provide the very accurate prediction of the dielectric constant behaviour with respect to
frequency (particularly off-resonance) and can be use to a certain extent to model absorption
properties. The model is incomplete, specifically, it assumes that the oscillating electron can
assume any one of continuum, of energy state, when infect the energy state in the in any
atomic system are quantized. As a result, the important effects arising from transitions
between discrete energy levels, such as spontaneous and stimulated absorption and emission,
are not included in this classical spring system. Quantum mechanical model must be used to
fully describe the medium polarization properties, but the results of such studies often reduce
to those of the spring model when field amplitude is very small.
3.4. Waveguides
“A id i t t th h hi h l t ti b t itt d f
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In 1897, Lord Rayleigh (John Willim Stutt) mathematically proved that wave propagation is
possible in waveguides both for circular and rectangular. In this project rectangular wave
guides are given more importance because they are easily available in the labs also the
mathematical analysis for rectangular shaped waveguides are simple than that of the circular
waveguides. In addition to this the experimental results with rectangular wave guide are
available. The method developed here is by using rectangular waveguide but this can easily be
generalized for other shapes of waveguides.
“Early microwave systems relied on waveguide and coaxial lines for transmission line media.
Waveguide has the advantage of high power-handling capability and low loss but is bulky and
expensive” ]14[ .
Wave guides, often consisting of simple conductors, support transverse electric (TE) and/or
transverse magnetic (TM) waves, characterized by the presence of longitudinal magnetic or
electric field components respectively.
3.4.1. General Solution for TEM, TE and TM Waves
Pozar in his book ]14[ briefly derived the expressions by using the point form of Maxwell’s
equations for the transverse and longitudinal components of electric and magnetic fields as a
general case, means expressions which are independent of the geometry of the waveguide it
may be parallel plate, rectangular, cylindrical or may be of any shape.
Let’s review these mathematical derivations to understand the working and response of the
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Where
( ) y xe,
= Transverse vector component of electric field.
( ) y xh ,
= Transverse vector component of magnetic field.
( ) y xe z , = Longitudinal component of electric field.
( ) y xh z , = Longitudinal component of electric field.
β = Propagation constant, because attanuaton is zero( 0=α .
ẑ = unit vector in z-direction.
1−= j
For the free space case that is by assuming that wave is travelling in free space, now one can
use the free space Maxwell’s equations in point form which are
H j E
ωµ −=×∇ (3.4.3)
E j H
ωε =×∇ (3.4.4)
Where
ω = Angular frequency of the electromagnetic wave.
ε = Permittivity of the material through which wave is propagating.
µ = Permeability of the material through which wave is propagating.
By inserting equations (3.4.1) and (3.4.2) in the above equations and using the definition of
vector product to convert these vector equations in to simple algebraic equations on can get
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x y z E j H j
y
H ωε β =+
∂
∂ (3.4.8)
y z
x E j x
H H j ωε β =
∂
∂−− (3.4.9)
z x y E j
y
H
x
H ωε =
∂
∂−
∂
∂ (3.4.10)
These six equations can be solved for the four transverse field components in terms of the
longitudinal components of electric and magnetic field.
∂
∂−
∂
∂=
x
H
y
E
k
j H z z
c
x β ωε 2 (3.4.11)
∂
∂+
∂
∂−=
y
H
x
E
k
j H z z
c
y β ωε 2 (3.4.12)
∂
∂+
∂
∂−=
y
H
x
E
k
j E z z
c
x ωε β 2 (3.4.13)
∂∂+
∂∂−=
x H
y E
k j E z z
c
z ωε β 2 (3.4.14)
Where222 β += k k c (3.4.15)
“ ck ”Is defined as the cut-off wave number.
Equations (3.4.11) to (3.4.15) are derived from the six fundamental equations (3.4.5) to
(3.4.10) which are relatively more general. TEM waves cannot be derived from equations
(3 4 11) to (3 4 15) but they can be explained completely using equations (3 4 5) to (3 4 10)
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very small. The Figure-3.5.1 shows some of the standard rectangular wave guides
components that are available
Figure 3.5.1: - Standard rectangular wave guides
The hollow rectangular waveguide can support TM and TE modes, but not TEM mode of
electromagnetic waves because TEM mode need more then one conductor while rectangular
waveguide consists of only single conductor.
Rectangular waveguide has a cut-off frequency below which propagation is not possible for
TM and TE mode.
3.5.1. TE Mode
TE (Transverse Electric) wave are the waves in which the component of electric field in the
direction of propagation of the wave is zero. It may have the non-zero component of magnetic
field in the direction of propagation of the wave that is the reason it is also known as the H-
waves. In this analysis as the direction of propagation of wave is +z-axis thus mathematically
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( ) a xat y xe y ,00, == (3.5.2)
3.5.2. TM Mode
TM (Transverse Magnetic) wave are the waves in which the component of magnetic field in
the direction of propagation of the wave is zero. It may have the non-zero component of
electric field in the direction of propagation of the wave that is the reason it is also known as
the E-waves. In this analysis as the direction of propagation of wave is +z-axis thus
mathematically TM mode can be defined as 0≠ z E and 0= z H . As far as the boundary
conditions are concern they are same as that in TE-Mode. That is with reference to Figure-
3.5.2.
( ) b yat y xe x ,00, == (3.5.1)
( ) a xat y xe y ,00, == (3.5.2)
The following Table-3.5.1 ]14[ will show the summary of the results of the study of rectangular
wave guide. In this table time-harmonic field with a t je ω dependence and wave propagation
along the z-axis and the electric and magnetic fields of the form of Equation (3.4.1) and
(3.4.2) are assumed.
Considering
k = wave number.
ck = Cut off wave number.
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d α = attenuation constant.
δtan = loss tangent.
QUANTIT
Y mnTE MODE mnTM MODE
k εµ ω εµ ω
ck ( ) ( )22 bnam π π + ( ) ( )22 bnam π π +
β 22ck k −
22
ck k −
cλ ck
2
ck
π 2
gλ
β
2
β
π 2
pv β
ω
β
d α β
tanδk 2
2
β
tanδk 2
2
Z
β
η k
β
η k
z E 0 z j β
mn eb
ynπ sin
a
xmπ sin B −
z H z j β
mn eb
ynπ cos
a
xmπ cos A −
0
x E z j β
mn2
c
e
b
ynπ sin
a
xmπ cos A
bk
nπ jω −
µ
z j β
mn2
c
e
b
ynπ sin
a
xmπ cos B
ak
mπ j β −
−
y E z j β
mn2
c
eb
ynπ cos
a
xmπ sin A
ak
mπ jωω −
−
z j β
mn2
c
eb
ynπ cos
a
xmπ sin B
bk
nπ j β −
−
ynπxmπmπjβ ynπxmπnπjω ε
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3.6. Scattering by Conducting Wedge ]10[
Scattering of electromagnetic waves from some regular shaped objects are studied in which
scattering from the conducting wedge is the most important one because the wedge is a
canonical problem that can be used to represent locally (near the edge) the scattering of more
complex structures, asymptotic forms of its solution have been utilized to solve numerous
practical problems. The asymptotic forms of its solution are obtained by taking the infinite
series modal solution and first transforming it into an integral by the so-called Watson
transformation]21,20[ . The integral is then evaluated by the method of steepest descent (saddle
point method) ]22[ . The resulting terms of the integral evaluation can be recognized to
represent the geometrical optics fields, both incident and reflected geometrical optics fields,
and the diffracted fields, both incident and reflected diffracted fields. These forms of the
solution have received considerable attention in the geometrical theory of diffraction (GTD)
which has become a generic name in the area of antennas and scattering.
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Balanis, used the incident field on the conducting wedge from the infinite electric line source
in which the currente
I is following and is of the form,
( ) ( )( ) ( )
( ) ( )( ) ( )
′≥′
′≤′
−=
∑
∑∞
−∞=
′−
∞
−∞=
′−
m
jm
mm
m
jm
mm
ei
z
e H J
e H J I
E
ρ ρ βρ ρ β
ρ ρ ρ β βρ
ωε
β
φ φ
φ φ
2
2
2
4 (3.6.1)
The z-component of the total electric field because of the incident (Electric field of infinite
Electric Line Source as mentioned above, in equation (3.6.1)) and scattered electric field from
the wedge in circular cylindrical co-ordinate system with total internal wedge angle WA= 2
is calculated in reference ]10[ by considering the reciprocity and is given by
( ) ( )( ) ( )[ ] ( )[ ]
( ) ( )( ) ( )[ ] ( )[ ]
′≥−×−′′
′≤−×−′′
=+=∑
∑
v
vvv
v
vvvs
z
i
z
t
zvv H J a
vv H J a
E E E ρ ρ α φ α φ βρ ρ β
ρ ρ α φ α φ ρ β βρ
,sinsin
,sinsin
2
2
(3.6.2)
The corresponding magnetic field components can be obtained by using Maxwell’s Equations
as
φ ρ ωµ ρ
∂
∂−=
t
zt E
j H
11 (3.6.3)
ρ ωµ φ
∂
∂=
t zt E
j H
1 (3.6.4)
3.7. Maxwell- Garnett Mixing Theory
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was published in 1904. It basically treated the impurities as spherical shaped object with
different complex permittivity was present in the material.
The two other papers which were studies are ]3,2[ , they basically based on the application of
the Maxwell-Garnett theory in special cases. In the reference ]2[ Maxwell Garnett theory was
proved mathematically and then checked by the three experiments only by taking the
homogenous medium in which the shape of the impurity was considered spherical.
In the reference]3[ Maxwell Garnett Theory was applied for the mixtures of anisotropic
inclusions with conducting polymers. The effective dielectric function eff ε for a medium of
anisotropic inclusions embedded in an isotropic host is calculated using the Maxwell Garnett
approximation. For uniaxial inclusions,eff ε depends on how well the inclusions are aligned.
Then the approximation to study eff ε for a model of quasi-one-dimensional organic polymers
was performed. The polymer is assumed to be made up of small single crystals embedded in
an isotropic host of randomly oriented polymer chains. The host dielectric function is
calculated using the effective-medium approximation (EMA) The resulting frequency-
dependent ( )ω ε eff closely resembles experiment. The formula used to approximate the total or
effective permittivity is
( )2121
2122 2
ee f ee
eee f eeeff
−−+
−×+= (3.7.1)
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with unique voltages and currents defined at any point in the circuit. In this situation the
circuit dimensions are small enough so that there is negligible phase change from one point in
the circuit to another. In addition, the fields can be considered as TEM fields supported by
two or more conductors. “This leads to a quasi-static type of solution to Maxwell's equations,
and to the well-known Kirchhoff voltage and current laws and impedance concepts of circuit
theory”]8[
. Simply there are very familiar helpful and easy laws like Kirchhoff voltage and
current laws governs the low frequency circuits and the theory used for their analysis is
known as circuit theory. But this theory or these laws are not applicable for high frequency
circuits like at microwave frequency, or one can say that microwave circuits are not in the
domain of circuit theory because of their less generality.
To solve high frequency circuits (with frequency greater than 1GHz) scientist and engineers
usually use Maxwell’s Equations which are the complete classical description and solution of
any electromagnetic phenomenon at any frequency. But the problem with this method is the
difficulty level and the mathematic involved in it. The analysis of any electromagnetic
phenomenon using Maxwell’s Equations is known as field analysis. One more problem with
field analysis is that it gives much more information about the particular problem under
consideration then one really wants or need. That is because the solution to Maxwell equation
for a given problem is complete; it gives the electric and magnetic field at all points in space
and at all times.
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elements together and find the response without the field analysis. Field analysis using
Maxwell’s Equations for such problems be hopelessly difficult.
S-parameters are basically the relation between incident voltage wave and reflected voltage
wave from the ports. For some components and circuits, the scattering parameters can be
calculated using network analysis technique. Otherwise the scattering parameters can be
measured directly with the help of Vector Network Analyzer (VNA).
Pozar ]14[ has defined the S-parameters by considering the N-Port network shown in Figure-
3.7.1. where +n
V is the amplitude of the voltage wave incident on port “n” and −n
V is the
amplitude of the voltage wave reflected from port “n”. The scattering matrix or [ ]S matrix is
defined in relative to these incident and reflected voltage wave as
=
+
+
+
n
2
1
nnn2n1
1n2221
1n1211
-
n
-
2
-
1
V
V
V
SSS
SSS
SSS
V
V
V
⋮
⋯
⋮⋮⋮⋮
⋯
⋯
⋮
[ ] += VSV -
A specific element of the [ ]S -matrix can be determined as
jk ≠∀=
++
=
0V1
-
1ij
k
V
VS
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CHAPTER No 4
4. EXTRACTION OF COMPLEX PERMITTIVITY FROM
S-PARAMETERS
This chapter includes complete mathematical derivation to calculate the complex permittivity
from the S-parameters of the multilayer problem. Firstly S-parameters for all layers are
converted into ABCD matrix then by knowing this and the ABCD matrices of the known
layers, ABCD matrix of the profiled layer is calculated using a mathematical technique called
“Deembedding” , and finally mathematical formulation is given to derive the complex
permittivity of that layer from this known characteristic matrix.
4.1. Two Independent Ways of Obtaining the S-Parameters
In this project S-parameters of the samples are taken from following two different
independent sources
1. HFSS Simulations, which will be discussed in Chapter No 5 of this report.
2. Experimental Measurements using Vector Network Analyzer (VNA), which will
be discussed in Chapter No 6 of this report.
After measuring the S-parameters from the experimental setup one has to convert it into the
normal rectangular form, because Vector Network Analyser (VNA) gives output magnitude
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4.2. Conversion of Scattering Matrix to ABCD Matrix
At low frequency the behaviour of two-port network can easily be characterise by the,
z, y, h or ABCD parameters because at low frequency it is relatively easy to do short and open
circuit experimentally. But at higher frequencies like at microwave frequencies these
parameters cannot be measured accurately because the required short circuit and open circuit
tests are difficult to achieve over a broadband range of microwave frequencies.
A set of parameters which are then useful at higher frequencies are Scattering parameters
known as S-parameters, which deals with the incident and reflected voltage waves at a
particular node or port rather then input port impedance, admittance, total current or voltage.
According to Pozar ]14[
“The scattering matrix relates the voltage wave’s incident on the ports to those reflected from
the ports”
These are mathematically defined in article 3.7 at page 40 of this report.
If the network is the cascaded version of two or more then two two-port networks then
another set of parameters known as ABCD-parameters are very useful. For two-port network
as shown in figure 4.2.1 ABCD parameters can be written as 22× matrix of the form
[ ]
=
d c
ba A` (4.2.1)
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The well-defined relationship between ABCD matrix and Scattering matrix derived in
Pozar [ ]14 , given by
( )( )
( )( )
( )( )
( )( )
21
21122211
021
21122211
0
21
21122211
21
21122211
2
11
1
2
11
2
11
2
11
S
S S S S d
Z S
S S S S
c
Z S
S S S S b
S
S S S S a
×
++−=
×
−−−
=
×
−++=
×
+−+=
(4.2.2)
For the ABCD matrix mentioned above.
4.3. Example of 4-Layer Problem (Calculation of S-Parameters of 4-Layers)
Consider a four layer problem as shown in the two dimensional figure 4.3.1 below,
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In case of simulation in HFSS the length of layer-1 and layer-4 (see figure 4.3.1) which are
basically filled with air plays an important role and one cannot neglect this because these
layers makes the problem as 4-layer problem. So the S-parameters taken from the simulation
data are the S-parameters of the 4-layers.
After taking the S-parameters from simulation data these are converted in transmission
parameters (ABCD-parameters) for the four layers using the relations in equations (4.2.2)
(with 10 = Z ) and the matrix obtained is named as [ ]5A .
4.4. Deembedding of ABCD Matrix of Profiled Layer
Characteristic matrices for the layers 1, 2 and 4 are also calculated which in this report are
denoted by [ ] [ ]21 A,A and [ ]4A respectively. The general form of these matrices is
[ ] ( ) ( )
( ) ( )
×=
mmmmm
mmmmm
mlγcosh zlγsinh
zlγsinhlγcoshA (4.4.1)
Where
ml = Physical length of layer-m
2
*2
−=
c
mm jγλ
λ ε
λ
π
= Complex propagation constant in the waveguide with cut-off wavelength
cλ filled with the material of complex permittivity*
mε
Extraction of Complex Permittivity from S-Parameters
“Th h i i i f ll f l i l h d f h h i i
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“The characteristic matrix of all four layers is equal to the product of the characteristic
matrices of the individual layers in the order of their physical existence.”
[ ][ ][ ][ ] [ ]54321 AAAAA = (4.4.2)
Where [ ]3A is the characteristic matrix of the layer-3 (profiled layer) whose complex
permittivity is to be determined. [ ]5A is determined experimentally or from the simulation
results and the other three matrices [ ] [ ]21 A,A and [ ]4A are calculated from the physical
length, the known complex permittivities of the respective materials, free space wave length
and cut-off wave length for a particular wave guide which in this case is WG-14.
4.5. Calculation of Complex Permittivity of Profiled Layer from its ABCD
Matrix
The extraction of [ ]3A from equation-1 is known as Deembedding of [ ]3A . It consists of 3-
steps.
Step-1: -
Multiplying with the multiplicative inverse of [ ]4A that is [ ]1
4A −
on the right side of the
equation-1 to get [ ]6A
[ ] [ ][ ][ ][ ][ ] [ ][ ]
[ ][ ][ ] [ ][ ]==
==
−
−−
1
1
45
1
443216
AAAAA
AAAAAAAA
(4 5 1)
Extraction of Complex Permittivity from S-Parameters
[ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ] 111
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[ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ]
[ ][ ] [ ] [ ]
−
−
=
==
==
−
−−−
66
66
11
11
77
77
6
1
132
1
45
1
1321
1
17
AAAA
AAAAAAAA
d c
ba
d c
ba
d c
ba
(4.5.2)
Step-3: -
Multiplying with the multiplicative inverse of matrix [ ]2A that is [ ]1
2A −
to the left side of
equation-3 to get [ ]8A
[ ] [ ] [ ] [ ] [ ] [ ] [ ] [ ]
[ ] [ ] [ ]
−
−
=
==
==
−
−−−−
77
77
22
22
88
88
7
1
23
1
45
1
1
1
232
1
28
AAA
AAAAAAAA
d c
ba
d c
ba
d c
ba
(4.5.3)
Finally [ ]8A is obtained which is the characteristic matrix of the layer-3 (profiled layer) from
which the complex permittivity can be calculated using the following steps
[ ]
( ) ( )( ) ( )( )[ ]
[ ]8 8 8 10
3
0010
3
33310
3
cbalogl
1
Z γlsinh Z γlsinhγlcoshlogl
1
cbalogl
13layer for constant n propagatio
×+=
+=
×+=−=3γ
Where 3l = physical length of the profiled layer, and finally the following equation helps us to
Extraction of Complex Permittivity from S-Parameters
4 6 Soft are Used for the Calc lation of Comple Permitti it
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4.6. Software Used for the Calculation of Complex Permittivity
The complete algorithm for the extraction of the complex permittivity from the ABCD matrix
of the 4-layers in the case of the simulation results or 2-layers in the case of the experimental
results is given above. The calculations are very lengthy so in order to do all these calculation
manually four programs are written C++. These programs are included as the appendix-D to
this dissertation report. C++ language is selected because it can handle the complex numbers
easily and it easy to program. Two of them are for 4-layers and rest of 2 are for the 2-layers
one. Out of two programs for 4 layers one takes complex permittivity and lengths of each
layers as an input and gives the result in the form of S-parameters and the second one is the
reverse of this, it takes S-parameters and the physical lengths as an input and results in
complex permittivity of the layer whose complex permittivity is to be determined. Same is the
case of the two programs for 2-layers.
HFSS Simulation and its Results
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CHAPTER No 5
5. HFSS- SIMULATION AND ITS RESULTS
This chapter deals with the simulations perform to check the experimental data. The software
used for simulation in this project is three dimensional electromagnetic simulation tool named
HFSS which is the abbreviation of “High Frequency Structure Simulator”. Method of
developing a model and ways of getting results are also discussed. This software uses
meshing technique for FEM method and the effect of meshing on simulation results is also
discussed. Finally the results in the form of complex permittivity of the four layer problem for
different shapes and sizes of discontinuities in the Perspex layer are given. For the results of
simulation in the form of S-parameters see Appendix-E.
5.1. Introduction to the Software
HFSS is a commercial solver for electromagnetic structures from Ansoft Corporation. The
acronym originally stood for high f requency structural simulator. It is one of the most popular
and powerful applications used for antenna design and the design of complex RF electronic
circuit elements including filters, transmission lines, and packaging. It is also very good to
handle scattering problems.
5.2. Technique Used
The simulation technique used in HFSS software to calculate the full 3 D electromagnetic
HFSS Simulation and its Results
smaller regions and represents the field in each sub-region (called element) with a local
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smaller regions and represents the field in each sub region (called element) with a local
function.
In HFSS, the geometric model is automatically divided into a large number of tetrahedral,
where a single tetrahedron is a four-sided pyramid. The collection of tetrahedral is refined as
the finite mesh.
The value of a vector field like H-field or E-field at points inside each tetrahedron is
interpolated from the vertices of the tetrahedron.
5.2.2. Size of Mesh vs. Accuracy
There is a trade-off among the size of the mesh, the desired level of accuracy, and the amount
of available computer resources.
The accuracy of the solution depends on the size of each of the individual elements
(tetrahedron). Generally one can say that the solution considering thousands of elements are
more accurate then the solution based on the mesh using relatively few numbers of elements.
To generate the precise description of a field quantity, each element must occupy a region that
is small enough for the field to be adequately interpolated from the base-function.
5.3. Meshing and its effect on simulation results
To produce the optimal mesh, HFSS uses an iterative process, called an adaptive analysis, in
which the mesh is automatically refined in critical or in sharp end regions. First, it generates a
solution based on a coarse initial mesh. Then, it refines the mesh in area of high density and
HFSS Simulation and its Results
days etc. but it is found that it has no important effect on the results of simulations”.
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days etc. but it is found that it has no important effect on the results of simulations .
This observation is made number of times during the project time and at last it is
concluded that the meshing technique used in the software take care of the error in the
final result and reduces the mesh size automatically where it is needed like on some
sharp corners and edges where there is a chance of having high rate of change of fields
with respect to space.
2. It is also observed that the time taken for simulation in the case of slots is small
compared to the time taken in the cases of angled grooves.
3. Maximum time taken for simulation is in the case of 60 Degree and 120 Degree
grooves.
5.4. Developing the Model in HFSS and Results
Rectangular slots are made by defining the 3-D box objects at the specific location. Assign the
material which is Perspex with the following electrical properties
( ) 00763358.062.2
02.0tan
02.062.2*
==⇒
−=
δ
ε j
Then the port are defined and the boundary conditions which is perfect-E because of the very
good electrical conductivity of the boundary of the rectangular waveguide which is made of
copper. 90 degree, 120 degrees and 60 degrees grooves were obtained from the regular
polygons like hexagon or octagon etc.
HFSS Simulation and its Results
The two dimensional picture of a four layer problem which are made in HFSS for simulation
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p y p
with all the lengths mentioned is shown in the Figure-5.4.1. In this figure the layer-3 is the
profiled layer and layer 2 is the layer of Perspex having thickness 4.8mm.
Three dimensional figure from HFSS model is shown below I figure-5.4.2.
Figure-5.4.3. Three Dimensional model developed in HFSS for simulation.
The dimensions and the position of each object in the model was really very important, hence
lot of attention was paid on that.
5.4.1. Slots
The simulation for the case of rectangular slots for different cases gave the results in the form
f h S Th S d l l h l i i i f h
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Rectangular Slots with pitch of 1.4mm, width of 1mm, depth of 1mm
and with air fill factor (AFF)=0.714285
Frequency Complex Permittivity
6GHz 1.408-j0.0284
7 GHz 1.344-j0.0283
8 GHz 1.285-j0.0226
Table-5.4.1. Complex permittivity of slots with 1.4mm pitch
Rectangular Slots with pitch of 1.7mm, width of 1mm,depth of 1mm
and with air fill factor (AFF)=0.58824
Frequency Complex Permittivity
6GHz 1.613-j0.024
7 GHz 1.55-j0.0365
8 GHz 1.487-j0.0189
Table-5.4.2. Complex permittivity of slots with 1.7mm pitch.
Rectangular Slots with pitch of 2.0mm, width of 1mm, depth of 1mm
and with air fill factor (AFF)=0.5
HFSS Simulation and