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ASE Group Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices Presented by: Dr. Harrison Chang, USI, ASE Group Date: Nov 14, 2012 Ver.:0.9
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ASE Group

Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices

Multi-Die Integration Strategies and System Partitions in Mobile WWAN Devices

Presented by: Dr. Harrison Chang, USI, ASE Group

Date: Nov 14, 2012

Ver.:0.9

ASE Group

Outline

• Strategic Thinking

• Smartphone Partition and Challenges

• Tear Down: iPhone5 and iPad3 4G

• Miniaturization Approach

ASE Group

Package vs. Module; Design Rule vs. Design Case

• Generic Package

– For IC of a Wide Range of Industries

– Each Industry May Have Different System Requirement: Power,

Voltage, Frequency, EMI/EMC, Timing, Thermal, Mechanical,

Temperature Ranges, …

– May Need to Qualify for the Conjunction of All Applicable

Requirement

– Comprehensive Design Rule to Accommodate Versatile Applications

• Specialized Module

– For IC of Specific Industries

– These Industries Often Have Similar System Requirement

– Just Need to Qualify for the Intended Application Requirement

– Single Point Design Case for Specific Application

ASE Group

From Multi-Die Integration to

System in Package

Design for

Manufacture &

Performance!!Stress & Reliability Design

ThermalDesign

RF Passive Circuit Design

Package-Module Co-Design

Layout Design

Main BoardDesign

RF Communication Integration

SW Development

Product QualificationFull

Type Approval

ASE Group

Multi-Die Integration: Cost Up or Down

• Cost-up Factors

– New CAPEX

– Cost of Yield: ∏(1-xn) or 1-∑(xn) or in Between

– Volume: Customized vs. Standard

– Fluctuation of Commodity Pricing

• Cost-down Factors

– Less Package and Testing

– Less Material

– Design Cycle: Rule Based to Case Based

– Less Overall System Cost

ASE Group

Who Owns the Multi-Die Integration

• Die Vender #1? Die Vender #2? …

• Module Maker? Device Owner?

• What about GM?

ASE Group

Typical Partitions in Smartphone

PMU

Antenna Switch

Front End Components

RFTransceiver

CommunicationProcessor

ApplicationProcessor

Codec

PMU

POP MemoryWi-FiGPS

Memory

BT Sensors

Out Side of

CMOS Node

ASE Group

Challenges at 3G/4G Modem

EDGE EVOLUTION

3G2G 3.5G 3.9G 4G

ASE Group

3G and 4G BandsEU US LTE Name Uplink Downlink MO LTE Band Name Allocation (MHz) MO

# (MHz) (MHz) Number (MHz)

1 2.1GHz 1920 - 1980 2110 - 2170NTT Docomo

Softbank (TBD)33 TDD2000 Lower 1900 - 1920

2 PCS1900 1850 - 1910 1930 - 1990 34 TDD2000 Upper 2010 - 2025

V 3 1800MHz 1710 - 1785 1805 -1880

KT, SKT(2013)

3-IT (2013)

VF-IT (2013)

EE-UK (TBD)

All Ausie MO (Telstra,

Optus, VF)

35 TDD1900 Lower 1850 - 1910

V 4 AWS 1710 - 1755 2110 - 2155AT&T

TMO-US(TBD2013)36 TDD1900 Upper 1930 - 1990

5 850MHz 824 - 849 869 - 894 LGU, SKT 37 PCS Center Gap 1910 - 1930

6 850 (Japan) 830 - 840 875 - 885 KDDI 38 IMT EXT Gap 2570 - 2620

V 7 2.6GHz (IMT Ext) 2500 - 2570 2620 - 2690

Orange-FR (TBD2012)

SFR

Telefornica-DE

VF-DE

DT-DE

E-Plus-DE

3-IT (2013)

VF-IT (2013)

All Dutch MO(KPN,

VF,TMO)

All Spanish MO in (VF,

Telefornica, Orange)

O2-UK (2013)

3-UK (TBD)

Yota-RUS

39 China TDD 1880 - 1920

8 900Mhz 880 - 915 925 - 960 40 2300MHz 2300 - 2400

9 1700Mhz (Japan#2) 1749.9 - 1784.9 1844.9 - 1879.9 KDDI 41 US 2600 2496-2690

10 Ext1.7/2.1 1710 - 1770 2110 - 2170 42 3500MHz 3400 - 3600

111500 Lower

(Japan#3)1427.9 - 1452.9 1475.9 - 1500.9 43 3700 MHz 3600-3800

12 Lower 700MHz 698 - 716 728 - 746

V 13 Upper C 700MHz 777 - 787 746 - 756 Verizon

14Upper D 700MHz

Public Safety788 - 798 758 - 768 public safety

V 17 Lower B 700MHz 704 - 716 734 - 746 AT&T

18 850 (Japan#4) 815 - 830 860 - 875

19 850 (Japan#5) 830 - 845 875 - 890

V 20 CEPT800 832 - 862 791 - 821

Vodafone

Orange-FR(TBD2012)

SFR

TMO-DE

Telefornica-DE

VF-DE

DT-DE

VF-IT (2013)

All Spanish MO (VF,

Telefornica, Orange

2014)

EE-UK (TBD)

3-UK (TBD)21 1500 (Japan#6) 1447.9 - 1462.9 1495.5 - 1510.9

24 US L Band 1625-1660 1525-1559

V 25 US PCS + G Block 1850 - 1915 1930 - 1995 Sprint

V 26 800MHz iDEN 859-894 814-849 Sprint (2014)

TDDFDD

Operating

Band

Frequency

Band

Common

Name

UL Frequencies UE

transmit (MHz)

DL Frequencies

UE receive

Channel Number

(UARFCN) UL

Channel Number (UARFCN)

DLRegion

I 2100 IMT 1920 - 1980 2110 - 2170 9612 - 9888 10562 - 10838

Europe, Asia, Africa, Oceania (Telstra,

Optus, Vodafone AU & NZ, Three Mobile

AU, 2° and Telecom NZ), Brazil

II 1900 PCS 1850 - 1910 1930 - 1990

9262 - 9538 additional 12,

37, 62, 87, 112, 137, 162,

187, 212, 237, 262, 287

9662 - 9938 additional 412,

437, 462, 487, 512, 537, 562,

587, 612, 637, 662, 687

Americas (AT&T, Bell Mobility, Telcel, Telus,

Rogers)

III 1800 DCS 1710 - 1785 1805 - 1880 937 - 1288 1162 - 1513 Europe, Asia, Oceania

IV 1700 AWS 1710 - 1755 2110 - 2155

1312 - 1513 additional 1662,

1687, 1712, 1737, 1762,

1787, 1812, 1837, 1862

1537 - 1738 additional 1887,

1912, 1937, 1962, 1987, 2012,

2037, 2062, 2087

USA (T-Mobile, Cincinnati Bell Wireless),

Canada (WIND Mobile, Mobilicity,

Videotron), Chile (VTR, Nextel)

V 850 CLR 824 - 849 869 - 8944132 - 4233 additional 782,

787, 807, 812, 837, 862

4357 - 4458 additional 1007,

1012, 1032, 1037, 1062, 1087

Americas (AT&T, Bell Mobility, Telcel, Telus,

Rogers), Oceania (Telstra, Telecom NZ,

Vodafone AU)VI 800 830 - 840 875 - 885 4162 - 4188 additional 812, 4387 - 4413 additional 1037, Japan (NTT DoCoMo)

VII 2600 IMT-E 2500 - 2570 2620 - 2690

2012 - 2338 additional 2362,

2387, 2412, 2437, 2462,

2487, 2512, 2537, 2562,

2587, 2612, 2637, 2662,

2237 - 2563 additional 2587,

2612, 2637, 2662, 2687, 2712,

2737, 2762, 2787, 2812, 2837,

2862, 2887, 2912

Europe (future)

VIII 900 GSM 880 - 915 925 - 960 2712 - 2863 2937 - 3088

Europe[1], Asia, Oceania (Optus, Vodafone

AU, Vodafone NZ), Dominican Republic

(Orange), Venezuela (Digitel GSM)IX 1700 1749.9 - 1784.9 1844.9 - 1879.9 8762 - 8912 9237 - 9387 Japan (E Mobile, NTT DoCoMo)

X 1700 1710 - 1770 2110 - 2170

2887 - 3163 additional 3187,

3212, 3237, 3262, 3287,

3312, 3337, 3362, 3387,

3412, 3437, 3462

3112 - 3388 additional 3412,

3437, 3462, 3487, 3512, 3537,

3562, 3587, 3612, 3637, 3662,

3687XI 1500 1427.9 - 1447.9 1475.9 - 1495.9 3487 - 3562 3712 - 3787 Japan (Softbank)

XII 700 SMH 698 - 716 728 - 7463612–3678 additional 3702,

3707, 3732, 3737, 3762,

3837–3903 additional 3927,

3932, 3957, 3962, 3987, 3992USA (future) (lower SMH blocks A/B/C)

XIII 700 SMH 777 - 787 746 - 7563792–3818 additional 3842,

3867

4017–4043 additional 4067,

4092USA (future) (upper SMH block C)

XIV 700 SMH 788 - 798 758 - 7683892–3918 additional 3942,

3967

4117–4143 additional 4167,

4192USA (upper SMH block D) (VZW)

More Are

Coming!

ASE Group

Challenges at the Connectivity

• Connectivity 2.4GHz, 5GHz, 60GHz

• WiFi, BT, GPS, FM, NFC, …

• Co-existence with LTE

• Mobile and WiFi Digital Integration

ASE Group

Challenge on PCB Area

Side View (from Bottom)

PCB

Metal Shield

Battery 2.3mm

1.5mm

0.7mm

3.75mm

4.5mm

W = 56mm

PCB

Metal Shield

Battery

Metal Shield

33.3 mm 19.5 mm

Phone T: 7.1mm vs. 7.6mm

Moto Droid Razr Apple iPhone5Moto Droid Razr(4G LTE) iPhone4s(3G) iPhone5(4G LTE)LCD 4.3" 3.5" 4"L(mm) 130.7 115.2 123.8W(mm) 68.9 58.6 60.1T(mm) 7.1 9.3 7.6Area(mm^2) 9005.2 6750.7 7442.2Capacity(Whr) 1780mAh3.7V/5.3Whr

(1420mAh)3.8V/5.45WhrL(mm) 94.5 82.0 87.5W(mm) 56.0 33.3 33.3T(mm) 2.3 4.0 3.75Size (mm^3) 12171.6 10922.4 10922.4L 94.5 92.0 79.1W 56.0 18.0 19.5T 2.2 4.0 3.75Area(mm^2) 5292.0 3312.0 3084.4

Phone SizeBatteryPCBA

ASE Group

iPhone5 Example

ASE Group

iPhone5 Example (Continue)

• Skyworks 77352-15 GSM/GPRS/EDGE power amplifier module

• SWUA 147 228 RF antenna switch module

• Triquint 666083-1229 WCDMA / HSUPA PA/ duplexer module for UMTS bands

• Avago AFEM-7813 dual-band LTE B1/B3 PA+FBAR duplexer module

• Skyworks 77491-158 CDMA power amplifier module

• Avago A5613 ACPM-5613 LTE band 13 power amplifier

• Qualcomm PM8018 RF power management IC

• Hynix H2JTDG2MBR 128 Gb (16 GB) NAND flash

• Apple 338S1131 dialog power management IC*

• Apple 338S1117 Cirrus Logic device (second image)

• STMicroelectronics L3G4200D (AGD5/2235/G8SBI ) low-power three-axis

• Murata/USI 339S0171 Wi-Fi module

ASE Group

iPhone5 Example (Continue)

• STMicroelectronics LIS331DLH (2233/DSH/GFGHA) ultra low-power, high performance, three-axis linear accelerometer

• Texas Instruments 27C245I touch screen SoC

• Broadcom BCM5976 touchscreencontroller

• Apple A6 application processor• Qualcomm MDM9615M LTE modem• Qualcomm RTR8600 Multi-band/mode RF

transceiver

ASE Group

iPAD3 4G Example

ASE Group

iPAD3 4G Example (Continue)

• Texas Instruments CD3240 driver device• Broadcom BCM4330 802.11a/b/g/n

MAC/baseband/radio with integrated Bluetooth 4.0+HS and FM transceiver

• 2 x 4Gb Elpida LP DDR2 = 1 GB DRAM in separate packages in a 64-bit configuration

• Fairchild FDMC 6683• Broadcom BCM5973 I/O controller• Broadcom BCM5974 microprocessor• Apple 338S0987 (Cirrus Logic audio

codec)

• Apple A5X processor• Apple 343S0561 - This IC looks like an

updated version of the 343S052 that we found in the iPad 2, and is used for power management.

• The NAND, part number THGVX1G7D2GLA08 is a 16 GB 24 nm MLC Flash from Toshiba

• Qualcomm MDM9600 - 3G and 4G wireless modem

• Skyworks 77469• Avago A7792

ASE Group

Miniaturization Technology RoadmapUSI ASE USI/ASE Third Party

High

Density

SMT

dPhase 2,

d=6

Phase 3,

d=4Phase 4,

d=3

2011 20142012 2013 20162015

Compartment

Shielding

X Y

17

IPD

IPD for RF IPDHi-Cap + Hi-Q IND

XY Reduction

Shielding

Z Reduction/3D Stacking

Conformal

Shielding Molding &

Shielding

Selective/Irregular

Molding/Coating

Composite

Molding/Coating

MUF (CFS)

MoM

3D

Module

FO WLP

TVM

3D FO WLP

Development

Research

FO-TVM

Version #

ASE Group

Q & A

ASE Group

191919


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