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MuTr Chamber properties

Date post: 13-Jan-2016
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MuTr Chamber properties. K.Shoji Kyoto Univ. Measurement of MuTr raw signal. Use oscilloscope & LabView Read 1 strip HV 1850V Gas mixture Ar:CO 2 :CF 4 =50%:30%:20%. Total resistance 10kohm. Typical Pulse Shape. 3000 samples. Fit to these region. Ground Level Noise Subtract. - PowerPoint PPT Presentation
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MuTr Chamber propertie s K.Shoji Kyoto Univ.
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Page 1: MuTr Chamber properties

MuTr Chamber properties

K.Shoji

Kyoto Univ.

Page 2: MuTr Chamber properties

Measurement of MuTr raw signalUse oscilloscope & LabView

Read 1 strip

HV 1850V

Gas mixture Ar:CO2:CF4=50%:30%:20%

Total resistance

10kohm

Page 3: MuTr Chamber properties

Typical Pulse Shape

Page 4: MuTr Chamber properties

Fit to these region

Ground Level Noise Subtract

Event-by-event ground level noise subtract

Use linear function y=gradient*x+intercept

3000 samples

Page 5: MuTr Chamber properties

Decay time

Detector Capacitance C

Total ResistanceR=9800ohm ~ 10Kohm

Exp(-t/CR)

Fit Error <300nsec

CR ~ 2.8usec C⇒ ~ 300pF (?)

Page 6: MuTr Chamber properties

Pulse Height and Charge distribution

Distribution of 1 StripTypical Charge is 200fCBut I used narrow scintillator for trigger,These distribution has dependence of place

Pulse height

chargePulse Height Charge

Page 7: MuTr Chamber properties

Correlation of Pulse Height & Charge

There is clear correlation.But little bit rise where pulse height is lowBecause of the Noise?

Page 8: MuTr Chamber properties

Simple Model

Cross mark isProfile of pulseheight&charge

Red is Model Line

Page 9: MuTr Chamber properties

ASD Chip for MuTr LL1 Trigger

4 Channels for 1 Chip

Input Impedance 370ohmPreamp Integration Time 80nsecPreamp gain 0.8mV/fCENC 2000electrons for 300pF⇒Analog output

Main amp gain 7Comparator with LVDS outputThreshold voltage : common for all 4 channels⇒Digital output

Page 10: MuTr Chamber properties

Expected Response of ASD Chip

Input Impedance 370ohm

Preamp Integration Time 80nsec

Preamp gain 0.8mV/fC

C ~ 300pF  ⇒ CR ~ 110nsec

Analog outputRise time : few ~ 10nsec

Page 11: MuTr Chamber properties

Linearity of ASD Chip1Kohm load

Linearity of Analog output is wrong where charge>500fC

Page 12: MuTr Chamber properties

From now…

• Correlation with neighbor strips• Try to Change HV or Gas mixture• Time Response

Leading edge fluctuation from ion drift time<100nsec• ENC 2000electrons for 300pF

~ 0.3fC

Requirement is less than 1%• Can we get 100um resolution with ASD Chip?


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