8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

1RF Device DataFreescale Semiconductor

RF Power Field Effect TransistorsN-Channel Enhancement-Mode Lateral MOSFETs

Designed for Class A or Class AB base station applications with frequencies

up to 1500 MHz Suitable for analog and digital modulation and multicarrier

amplifier applications

bull Typical Two-Tone Performance at 960 MHz VDD = 28 Volts IDQ = 125 mAPout = 10 Watts PEP

Power Gain mdash 18 dB

Drain Efficiency mdash 32

IMD mdash -37 dBc

bull Capable of Handling 101 VSWR 28 Vdc 960 MHz 10 Watts CWOutput Power

Features

bull Characterized with Series Equivalent Large-Signal Impedance Parameters

bull On-Chip RF Feedback for Broadband Stability

bull Qualified Up to a Maximum of 32 VDD Operation

bull Integrated ESD Protection

bull 225degC Capable Plastic Package

bull RoHS Compliantbull In Tape and Reel R1 Suffix = 500 Units per 24 mm 13 inch Reel

Table 1 Maximum Ratings

Rating Symbol Value Unit

Drain-Source Voltage VDSS -05 +68 Vdc

Gate-Source Voltage VGS -05 +12 Vdc

Storage Temperature Range Tstg - 65 to +150 degC

Case Operating Temperature TC 150 degC

Operating Junction Temperature (12) TJ 225 degC

Table 2 Thermal Characteristics

Characteristic Symbol Value (23) Unit

Thermal Resistance Junction to Case

Case Temperature 80degC 10 W PEP

RθJC

285

degCW

1 Continuous use at maximum temperature will affect MTTF

2 MTTF calculator available at httpwwwfreescalecomrf Select Software amp ToolsDevelopment ToolsCalculators to access

MTTF calculators by product

3 Refer to AN1955 Thermal Measurement Methodology of RF Power Amplifiers Go to httpwwwfreescalecomrf

Select DocumentationApplication Notes - AN1955

Document Number MW6S010N

Rev 5 62009Freescale SemiconductorTechnical Data

MW6S010NR1MW6S010GNR1

450- 1500 MHz 10 W 28 V

LATERAL N-CHANNEL

BROADBAND RF POWER MOSFETs

CASE 1265-09 STYLE 1

TO-270-2

PLASTIC

MW6S010NR1

CASE 1265A-03 STYLE 1

TO-270-2 GULL

PLASTIC

MW6S010GNR1

983209 Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Table 3 ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1A

Machine Model (per EIAJESD22-A115) A

Charge Device Model (per JESD22-C101) III

Table 4 Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113 IPCJEDEC J-STD-020 3 260 degC

Table 5 Electrical Characteristics (T A = 25degC unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc VGS = 0 Vdc)

IDSS mdash mdash 10 micro Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc VGS = 0 Vdc)

IDSS mdash mdash 1 micro Adc

Gate-Source Leakage Current

(VGS = 5 Vdc VDS = 0 Vdc)

IGSS mdash mdash 1 micro Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc ID = 100 micro Adc)

VGS(th) 15 23 3 Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc ID = 125 mAdc Measured in Functional Test)

VGS(Q) 2 31 4 Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc ID = 03 Adc)

VDS(on) mdash 027 035 Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc plusmn 30 mV(rms)ac 1 MHz VGS = 0 Vdc)

Crss mdash 032 mdash pF

Output Capacitance

(VDS = 28 Vdc plusmn 30 mV(rms)ac 1 MHz VGS = 0 Vdc)

Coss mdash 10 mdash pF

Input Capacitance(VDS = 28 Vdc VGS = 0 Vdc plusmn 30 mV(rms)ac 1 MHz) Ciss mdash 23 mdash pF

Functional Tests (In Freescale Test Fixture 50 ohm system) VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP f = 960 MHz Two-Tone Test

100 kHz Tone Spacing

Power Gain Gps 175 18 205 dB

Drain Efficiency ηD 31 32 mdash

Intermodulation Distortion IMD mdash -37 -33 dBc

Input Return Loss IRL mdash -18 -10 dB

Typical Performances (In Freescale 450 MHz Demo Board 50 οhm system) VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP 420-470 MHz

Two-Tone Test 100 kHz Tone Spacing

Power Gain Gps mdash 20 mdash dB

Drain Efficiency ηD mdash 33 mdash Intermodulation Distortion IMD mdash -40 mdash dBc

Input Return Loss IRL mdash -10 mdash dB

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

3RF Device DataFreescale Semiconductor

Figure 1 MW6S010NR1(GNR1) Test Circuit Schematic mdash 900 MHz

C9

C2

+

RF

OUTPUT

C5

VBIAS

C3

+ VSUPPLY

RF

INPUT Z1

C1

Z2 Z3 Z4

C8

R1 DUT

C4

B1

C6 C7

C10

Z5

L1

C14

Z6

C17C20

Z7

C11

C12

C13

C15 C16

+

C18

+

C19

+

Z5 0313Prime x 0902Prime Microstrip

Z6 0073Prime x 1080Prime Microstrip

Z7 0073Prime x 0314Prime Microstrip

PCB Rogers ULTRALAM 2000 0031Prime εr = 255

Z1 0073Prime x 0223Prime Microstrip

Z2 0112Prime x 0070Prime Microstrip

Z3 0213Prime x 0500Prime Microstrip

Z4 0313Prime x 1503Prime Microstrip

Table 6 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 900 MHz

Part Description Part Number Manufacturer

B1 Ferrite Bead 2743019447 Fair -Rite

C1 C6 C11 C20 47 pF Chip Capacitors ATC100B470JT500XT ATC

C2 C18 C19 22 microF 35 V Tantalum Capacitors T491D226K035AT Kemet

C3 C16 220 microF 63 V Electrolytic Capacitors Radial 2222 -136 -68221 Vishay

C4 C15 01 microF Chip Capacitors CDR33BX104AKWS Kemet

C5 C8 C17 08-80 pF Variable Capacitors Gigatrim 272915L Johanson

C7 C12 24 pF Chip Capacitors ATC100B240JT500XT ATC

C9 C10 C13 68 pF Chip Capacitors ATC100B6R8JT500XT ATC

C14 75 pF Chip Capacitor ATC100B7R5JT500XT ATC

L1 125 nH Inductor A04T-5 Coilcraft

R1 1 kΩ 14 W Chip Resistor CRCW12061001FKEA Vishay

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 2 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 900 MHz

C3

MW6S010N

C4C7

C10

C6B1C2

C1

C5 C8

C9

R1 L1

C16

C18

C19

C15

C12

C11

C13

C14C17

C20

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 520

MW6S010NR1 MW6S010GNR1

5RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 900 MHz

970

16

48

910

minus26

minus8

IRL

Gps

IMD

f FREQUENCY (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ

= 125 mA 100 kHz Tone Spacing

44minus10

40minus12

36minus14

32minus16

28minus18

24minus20

20minus22

930 950 960

Figure 3 Two-Tone Wideband Performance

Pout = 10 Watts

Pout OUTPUT POWER (WATTS) AVG

15

20

1

IDQ

= 190 mA

VDD = 28 Vdc f = 945 MHz

TwominusTone Measurements

100 kHz Tone Spacing

19

17

16

10 100

Figure 4 Two-Tone Power Gain versus

Output Power

100

minus70

minus10

01

7th Order

VDD = 28 Vdc IDQ = 125 mAf = 945 MHz TwominusTone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

1 10

minus20

minus30

minus40

minus50

minus60

Pout OUTPUT POWER (WATTS) AVG

Figure 5 Intermodulation Distortion Products

versus Output Power

I M D

I N T E R M O D U L A T I O N D I S T O R T I O N ( d B c )

G p s

P O W E R G A I N ( d B )

I R L

I N P U T R E T U R N L O S S ( d B )

I M D

I N T E R M O D U L A

T I O N D I S T O R T I O N ( d B c )

10minus55

minus15

01

7th Order

TWOminusTONE SPACING (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ = 125 mA TwominusTone Measurements

(f1+f2)2 = Center Frequency = 945 MHz

5th Order

3rd Order

minus20

minus25

minus30

minus35

minus40

1 100

Figure 6 Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 4314 dBm (2061 W)

Pin INPUT POWER (dBm)

VDD = 28 Vdc IDQ = 125 mA

Pulsed CW 8 microsec(on) 1 msec(off)

f = 945 MHz

46

44

42

40

38

21 23 25

Actual

Ideal

2719

Figure 7 Pulse CW Output Power versus

Input Power

I M D

I N T E R M O D

U L A T I O N D I S T O R T I O N ( d B c )

P o u t O U T

P U T P O W E R ( d B m )

920 940

18 90 mA

125 mA

P1dB = 4223 dBm (1671 W)

minus50

minus45

minus24

01

η D

D R A I N E F F I C I E N C Y (

) G p s

P O W E R G A I N ( d B )

ηD

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

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MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

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MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

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MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

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MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

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MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Table 3 ESD Protection Characteristics

Test Methodology Class

Human Body Model (per JESD22-A114) 1A

Machine Model (per EIAJESD22-A115) A

Charge Device Model (per JESD22-C101) III

Table 4 Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit

Per JESD22-A113 IPCJEDEC J-STD-020 3 260 degC

Table 5 Electrical Characteristics (T A = 25degC unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc VGS = 0 Vdc)

IDSS mdash mdash 10 micro Adc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc VGS = 0 Vdc)

IDSS mdash mdash 1 micro Adc

Gate-Source Leakage Current

(VGS = 5 Vdc VDS = 0 Vdc)

IGSS mdash mdash 1 micro Adc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc ID = 100 micro Adc)

VGS(th) 15 23 3 Vdc

Gate Quiescent Voltage

(VDD = 28 Vdc ID = 125 mAdc Measured in Functional Test)

VGS(Q) 2 31 4 Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc ID = 03 Adc)

VDS(on) mdash 027 035 Vdc

Dynamic Characteristics

Reverse Transfer Capacitance

(VDS = 28 Vdc plusmn 30 mV(rms)ac 1 MHz VGS = 0 Vdc)

Crss mdash 032 mdash pF

Output Capacitance

(VDS = 28 Vdc plusmn 30 mV(rms)ac 1 MHz VGS = 0 Vdc)

Coss mdash 10 mdash pF

Input Capacitance(VDS = 28 Vdc VGS = 0 Vdc plusmn 30 mV(rms)ac 1 MHz) Ciss mdash 23 mdash pF

Functional Tests (In Freescale Test Fixture 50 ohm system) VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP f = 960 MHz Two-Tone Test

100 kHz Tone Spacing

Power Gain Gps 175 18 205 dB

Drain Efficiency ηD 31 32 mdash

Intermodulation Distortion IMD mdash -37 -33 dBc

Input Return Loss IRL mdash -18 -10 dB

Typical Performances (In Freescale 450 MHz Demo Board 50 οhm system) VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP 420-470 MHz

Two-Tone Test 100 kHz Tone Spacing

Power Gain Gps mdash 20 mdash dB

Drain Efficiency ηD mdash 33 mdash Intermodulation Distortion IMD mdash -40 mdash dBc

Input Return Loss IRL mdash -10 mdash dB

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

3RF Device DataFreescale Semiconductor

Figure 1 MW6S010NR1(GNR1) Test Circuit Schematic mdash 900 MHz

C9

C2

+

RF

OUTPUT

C5

VBIAS

C3

+ VSUPPLY

RF

INPUT Z1

C1

Z2 Z3 Z4

C8

R1 DUT

C4

B1

C6 C7

C10

Z5

L1

C14

Z6

C17C20

Z7

C11

C12

C13

C15 C16

+

C18

+

C19

+

Z5 0313Prime x 0902Prime Microstrip

Z6 0073Prime x 1080Prime Microstrip

Z7 0073Prime x 0314Prime Microstrip

PCB Rogers ULTRALAM 2000 0031Prime εr = 255

Z1 0073Prime x 0223Prime Microstrip

Z2 0112Prime x 0070Prime Microstrip

Z3 0213Prime x 0500Prime Microstrip

Z4 0313Prime x 1503Prime Microstrip

Table 6 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 900 MHz

Part Description Part Number Manufacturer

B1 Ferrite Bead 2743019447 Fair -Rite

C1 C6 C11 C20 47 pF Chip Capacitors ATC100B470JT500XT ATC

C2 C18 C19 22 microF 35 V Tantalum Capacitors T491D226K035AT Kemet

C3 C16 220 microF 63 V Electrolytic Capacitors Radial 2222 -136 -68221 Vishay

C4 C15 01 microF Chip Capacitors CDR33BX104AKWS Kemet

C5 C8 C17 08-80 pF Variable Capacitors Gigatrim 272915L Johanson

C7 C12 24 pF Chip Capacitors ATC100B240JT500XT ATC

C9 C10 C13 68 pF Chip Capacitors ATC100B6R8JT500XT ATC

C14 75 pF Chip Capacitor ATC100B7R5JT500XT ATC

L1 125 nH Inductor A04T-5 Coilcraft

R1 1 kΩ 14 W Chip Resistor CRCW12061001FKEA Vishay

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 2 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 900 MHz

C3

MW6S010N

C4C7

C10

C6B1C2

C1

C5 C8

C9

R1 L1

C16

C18

C19

C15

C12

C11

C13

C14C17

C20

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 520

MW6S010NR1 MW6S010GNR1

5RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 900 MHz

970

16

48

910

minus26

minus8

IRL

Gps

IMD

f FREQUENCY (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ

= 125 mA 100 kHz Tone Spacing

44minus10

40minus12

36minus14

32minus16

28minus18

24minus20

20minus22

930 950 960

Figure 3 Two-Tone Wideband Performance

Pout = 10 Watts

Pout OUTPUT POWER (WATTS) AVG

15

20

1

IDQ

= 190 mA

VDD = 28 Vdc f = 945 MHz

TwominusTone Measurements

100 kHz Tone Spacing

19

17

16

10 100

Figure 4 Two-Tone Power Gain versus

Output Power

100

minus70

minus10

01

7th Order

VDD = 28 Vdc IDQ = 125 mAf = 945 MHz TwominusTone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

1 10

minus20

minus30

minus40

minus50

minus60

Pout OUTPUT POWER (WATTS) AVG

Figure 5 Intermodulation Distortion Products

versus Output Power

I M D

I N T E R M O D U L A T I O N D I S T O R T I O N ( d B c )

G p s

P O W E R G A I N ( d B )

I R L

I N P U T R E T U R N L O S S ( d B )

I M D

I N T E R M O D U L A

T I O N D I S T O R T I O N ( d B c )

10minus55

minus15

01

7th Order

TWOminusTONE SPACING (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ = 125 mA TwominusTone Measurements

(f1+f2)2 = Center Frequency = 945 MHz

5th Order

3rd Order

minus20

minus25

minus30

minus35

minus40

1 100

Figure 6 Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 4314 dBm (2061 W)

Pin INPUT POWER (dBm)

VDD = 28 Vdc IDQ = 125 mA

Pulsed CW 8 microsec(on) 1 msec(off)

f = 945 MHz

46

44

42

40

38

21 23 25

Actual

Ideal

2719

Figure 7 Pulse CW Output Power versus

Input Power

I M D

I N T E R M O D

U L A T I O N D I S T O R T I O N ( d B c )

P o u t O U T

P U T P O W E R ( d B m )

920 940

18 90 mA

125 mA

P1dB = 4223 dBm (1671 W)

minus50

minus45

minus24

01

η D

D R A I N E F F I C I E N C Y (

) G p s

P O W E R G A I N ( d B )

ηD

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

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MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

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MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

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MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 320

MW6S010NR1 MW6S010GNR1

3RF Device DataFreescale Semiconductor

Figure 1 MW6S010NR1(GNR1) Test Circuit Schematic mdash 900 MHz

C9

C2

+

RF

OUTPUT

C5

VBIAS

C3

+ VSUPPLY

RF

INPUT Z1

C1

Z2 Z3 Z4

C8

R1 DUT

C4

B1

C6 C7

C10

Z5

L1

C14

Z6

C17C20

Z7

C11

C12

C13

C15 C16

+

C18

+

C19

+

Z5 0313Prime x 0902Prime Microstrip

Z6 0073Prime x 1080Prime Microstrip

Z7 0073Prime x 0314Prime Microstrip

PCB Rogers ULTRALAM 2000 0031Prime εr = 255

Z1 0073Prime x 0223Prime Microstrip

Z2 0112Prime x 0070Prime Microstrip

Z3 0213Prime x 0500Prime Microstrip

Z4 0313Prime x 1503Prime Microstrip

Table 6 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 900 MHz

Part Description Part Number Manufacturer

B1 Ferrite Bead 2743019447 Fair -Rite

C1 C6 C11 C20 47 pF Chip Capacitors ATC100B470JT500XT ATC

C2 C18 C19 22 microF 35 V Tantalum Capacitors T491D226K035AT Kemet

C3 C16 220 microF 63 V Electrolytic Capacitors Radial 2222 -136 -68221 Vishay

C4 C15 01 microF Chip Capacitors CDR33BX104AKWS Kemet

C5 C8 C17 08-80 pF Variable Capacitors Gigatrim 272915L Johanson

C7 C12 24 pF Chip Capacitors ATC100B240JT500XT ATC

C9 C10 C13 68 pF Chip Capacitors ATC100B6R8JT500XT ATC

C14 75 pF Chip Capacitor ATC100B7R5JT500XT ATC

L1 125 nH Inductor A04T-5 Coilcraft

R1 1 kΩ 14 W Chip Resistor CRCW12061001FKEA Vishay

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 420 4

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 2 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 900 MHz

C3

MW6S010N

C4C7

C10

C6B1C2

C1

C5 C8

C9

R1 L1

C16

C18

C19

C15

C12

C11

C13

C14C17

C20

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 520

MW6S010NR1 MW6S010GNR1

5RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 900 MHz

970

16

48

910

minus26

minus8

IRL

Gps

IMD

f FREQUENCY (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ

= 125 mA 100 kHz Tone Spacing

44minus10

40minus12

36minus14

32minus16

28minus18

24minus20

20minus22

930 950 960

Figure 3 Two-Tone Wideband Performance

Pout = 10 Watts

Pout OUTPUT POWER (WATTS) AVG

15

20

1

IDQ

= 190 mA

VDD = 28 Vdc f = 945 MHz

TwominusTone Measurements

100 kHz Tone Spacing

19

17

16

10 100

Figure 4 Two-Tone Power Gain versus

Output Power

100

minus70

minus10

01

7th Order

VDD = 28 Vdc IDQ = 125 mAf = 945 MHz TwominusTone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

1 10

minus20

minus30

minus40

minus50

minus60

Pout OUTPUT POWER (WATTS) AVG

Figure 5 Intermodulation Distortion Products

versus Output Power

I M D

I N T E R M O D U L A T I O N D I S T O R T I O N ( d B c )

G p s

P O W E R G A I N ( d B )

I R L

I N P U T R E T U R N L O S S ( d B )

I M D

I N T E R M O D U L A

T I O N D I S T O R T I O N ( d B c )

10minus55

minus15

01

7th Order

TWOminusTONE SPACING (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ = 125 mA TwominusTone Measurements

(f1+f2)2 = Center Frequency = 945 MHz

5th Order

3rd Order

minus20

minus25

minus30

minus35

minus40

1 100

Figure 6 Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 4314 dBm (2061 W)

Pin INPUT POWER (dBm)

VDD = 28 Vdc IDQ = 125 mA

Pulsed CW 8 microsec(on) 1 msec(off)

f = 945 MHz

46

44

42

40

38

21 23 25

Actual

Ideal

2719

Figure 7 Pulse CW Output Power versus

Input Power

I M D

I N T E R M O D

U L A T I O N D I S T O R T I O N ( d B c )

P o u t O U T

P U T P O W E R ( d B m )

920 940

18 90 mA

125 mA

P1dB = 4223 dBm (1671 W)

minus50

minus45

minus24

01

η D

D R A I N E F F I C I E N C Y (

) G p s

P O W E R G A I N ( d B )

ηD

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 620 6

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 820 8

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 420 4

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 2 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 900 MHz

C3

MW6S010N

C4C7

C10

C6B1C2

C1

C5 C8

C9

R1 L1

C16

C18

C19

C15

C12

C11

C13

C14C17

C20

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 520

MW6S010NR1 MW6S010GNR1

5RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 900 MHz

970

16

48

910

minus26

minus8

IRL

Gps

IMD

f FREQUENCY (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ

= 125 mA 100 kHz Tone Spacing

44minus10

40minus12

36minus14

32minus16

28minus18

24minus20

20minus22

930 950 960

Figure 3 Two-Tone Wideband Performance

Pout = 10 Watts

Pout OUTPUT POWER (WATTS) AVG

15

20

1

IDQ

= 190 mA

VDD = 28 Vdc f = 945 MHz

TwominusTone Measurements

100 kHz Tone Spacing

19

17

16

10 100

Figure 4 Two-Tone Power Gain versus

Output Power

100

minus70

minus10

01

7th Order

VDD = 28 Vdc IDQ = 125 mAf = 945 MHz TwominusTone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

1 10

minus20

minus30

minus40

minus50

minus60

Pout OUTPUT POWER (WATTS) AVG

Figure 5 Intermodulation Distortion Products

versus Output Power

I M D

I N T E R M O D U L A T I O N D I S T O R T I O N ( d B c )

G p s

P O W E R G A I N ( d B )

I R L

I N P U T R E T U R N L O S S ( d B )

I M D

I N T E R M O D U L A

T I O N D I S T O R T I O N ( d B c )

10minus55

minus15

01

7th Order

TWOminusTONE SPACING (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ = 125 mA TwominusTone Measurements

(f1+f2)2 = Center Frequency = 945 MHz

5th Order

3rd Order

minus20

minus25

minus30

minus35

minus40

1 100

Figure 6 Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 4314 dBm (2061 W)

Pin INPUT POWER (dBm)

VDD = 28 Vdc IDQ = 125 mA

Pulsed CW 8 microsec(on) 1 msec(off)

f = 945 MHz

46

44

42

40

38

21 23 25

Actual

Ideal

2719

Figure 7 Pulse CW Output Power versus

Input Power

I M D

I N T E R M O D

U L A T I O N D I S T O R T I O N ( d B c )

P o u t O U T

P U T P O W E R ( d B m )

920 940

18 90 mA

125 mA

P1dB = 4223 dBm (1671 W)

minus50

minus45

minus24

01

η D

D R A I N E F F I C I E N C Y (

) G p s

P O W E R G A I N ( d B )

ηD

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 620 6

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 720

MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 820 8

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

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AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

5RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 900 MHz

970

16

48

910

minus26

minus8

IRL

Gps

IMD

f FREQUENCY (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ

= 125 mA 100 kHz Tone Spacing

44minus10

40minus12

36minus14

32minus16

28minus18

24minus20

20minus22

930 950 960

Figure 3 Two-Tone Wideband Performance

Pout = 10 Watts

Pout OUTPUT POWER (WATTS) AVG

15

20

1

IDQ

= 190 mA

VDD = 28 Vdc f = 945 MHz

TwominusTone Measurements

100 kHz Tone Spacing

19

17

16

10 100

Figure 4 Two-Tone Power Gain versus

Output Power

100

minus70

minus10

01

7th Order

VDD = 28 Vdc IDQ = 125 mAf = 945 MHz TwominusTone Measurements

100 kHz Tone Spacing

5th Order

3rd Order

1 10

minus20

minus30

minus40

minus50

minus60

Pout OUTPUT POWER (WATTS) AVG

Figure 5 Intermodulation Distortion Products

versus Output Power

I M D

I N T E R M O D U L A T I O N D I S T O R T I O N ( d B c )

G p s

P O W E R G A I N ( d B )

I R L

I N P U T R E T U R N L O S S ( d B )

I M D

I N T E R M O D U L A

T I O N D I S T O R T I O N ( d B c )

10minus55

minus15

01

7th Order

TWOminusTONE SPACING (MHz)

VDD = 28 Vdc Pout = 10 W (Avg)

IDQ = 125 mA TwominusTone Measurements

(f1+f2)2 = Center Frequency = 945 MHz

5th Order

3rd Order

minus20

minus25

minus30

minus35

minus40

1 100

Figure 6 Intermodulation Distortion Products

versus Tone Spacing

29

48

P3dB = 4314 dBm (2061 W)

Pin INPUT POWER (dBm)

VDD = 28 Vdc IDQ = 125 mA

Pulsed CW 8 microsec(on) 1 msec(off)

f = 945 MHz

46

44

42

40

38

21 23 25

Actual

Ideal

2719

Figure 7 Pulse CW Output Power versus

Input Power

I M D

I N T E R M O D

U L A T I O N D I S T O R T I O N ( d B c )

P o u t O U T

P U T P O W E R ( d B m )

920 940

18 90 mA

125 mA

P1dB = 4223 dBm (1671 W)

minus50

minus45

minus24

01

η D

D R A I N E F F I C I E N C Y (

) G p s

P O W E R G A I N ( d B )

ηD

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

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MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

TYPICAL CHARACTERISTICS mdash 900 MHz

A C P R ( d B c )

0 minus60

Pout OUTPUT POWER (WATTS) AVG

50 minus10

40 minus20

30 minus30

20 minus40

10 minus50

01 1 10

Gps

ACPR

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

Figure 8 Single-Carrier CDMA ACPR Power

Gain and Power Added Efficiency

versus Output Power

100

15

20

01

0

50

TC = minus30C

25C

minus30

C

101

19

18

17

16

40

30

20

10

Pout OUTPUT POWER (WATTS) CW

Figure 9 Power Gain and Power Added

Efficiency versus Output Power

G p s

P O W E R G A I N ( d B )

Gps

Pout OUTPUT POWER (WATTS) CW

Figure 10 Power Gain versus Output Power

IDQ = 125 mA

f = 945 MHz

1415

19

0 12

17

16

18

4 6 8

G p s P

O W E R G A I N ( d B )

0

24

500

minus25

5

S21

f FREQUENCY (MHz)

Figure 11 Broadband Frequency Response

S11

20 0

16 minus5

12 minus10

8 minus15

4 minus20

120011001000900800700600

VDD = 28 Vdc

Pout = 10 W CW

IDQ = 125 mA

S 1 1 ( d B )

S 2 1 ( d B )

85C

25C

85C

16102

VDD = 28 Vdc

IDQ = 125 mA

f = 945 MHz

VDD = 24 V28 V 32 V

ηD

η D

D R A I N E F F I C I E N C

Y ( ) G p s

P O W E R G A I N ( d B )

ηD

η D D R A I N

E F F I C I E N C Y ( )

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

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MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 720

MW6S010NR1 MW6S010GNR1

7RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS

Figure 12 MTTF Factor versus Junction Temperature

250

108

90

TJ JUNCTION TEMPERATURE (degC)

This above graph displays calculated MTTF in hours when the device

is operated at VDD = 28 Vdc Pout = 10 W PEP and ηD = 32

MTTF calculator available at httpwwwfreescalecomrf Select

Software amp ToolsDevelopment ToolsCalculators to access MTTF

calculators by product

106

105

104

110 130 150 170 190

M T T F

( H O U R S )

210 230

107

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 820 8

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1020 10

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1120

MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

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RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 820 8

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

800

820

840

31 + j19

27 + j22

28 + j17

101 + j23

83 + j25

82 + j33

VDD = 28 Vdc IDQ = 125 mA Pout = 10 W PEP

860

880

900

31 + j34

29 + j37

33 + j38

98 + j48

106 + j56

95 + j55

920

940

960

28 + j44

32 + j49

30 + j47

101 + j59

110 + j64

118 + j66

980 36 + j52 121 + j71

Figure 13 Series Equivalent Source and Load Impedance mdash 900 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measured

from drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 800 MHz

f = 980 MHz

Zo = 25 Ω

f = 800 MHz

f = 980 MHz

Zload

Zsource

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1020 10

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1120

MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1220 12

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 920

MW6S010NR1 MW6S010GNR1

9RF Device DataFreescale Semiconductor

Figure 14 MW6S010NR1(GNR1) Test Circuit Schematic mdash 450 MHz

C5

C2

+

RF

OUTPUT

C6

VBIAS

VSUPPLY

RF

INPUT Z1

C9

Z5

R6

DUT

B2

C4

Z6

L1

C12 C11C10

Z5 0475Prime x 0330Prime Microstrip

Z6 0475Prime x 0325Prime Microstrip

Z8 1250Prime x 0080Prime Microstrip

PCB Rogers ULTRALAM 2000 0030Prime εr = 255

Z1 0540Prime x 0080Prime Microstrip

Z2 0365Prime x 0080Prime Microstrip

Z3 0225Prime x 0080Prime Microstrip

Z4 Z7 0440Prime x 0080Prime Microstrip

C7

Z2

C8

Z3 Z4

C3

C1

+

R2R5

R1T1

R3

R4

T2

Z8Z7

B1

C13 C14 C15

+

Table 7 MW6S010NR1(GNR1) Test Circuit Component Designations and Values mdash 450 MHz

Part Description Part Number Manufacturer

B1 B2 Ferrite Bead 2743019447 Fair -Rite

C1 1 microF 35 V Tantalum Capacitor T491C105K050AT Kemet

C2 C15 22 microF 35 V Tantalum Capacitors T491X226K035AT Kemet

C3 C14 01 microF Chip Capacitors C1210C104K5RAC Kemet

C4 C9 C10 C13 330 pF Chip Capacitors ATC700A331JT150XT ATC

C5 43 pF Chip Capacitor ATC100B4R3JT500XT ATC

C6 C11 06-80 pF Variable Capacitors 27291SL Johanson

C7 C8 C12 47 pF Chip Capacitors ATC100B4R7JT500XT ATC

L1 39 microH Chip Inductor ISC-1210 Vishay

R1 10 Ω Chip Resistor CRCW080510R0FKEA Vishay

R2 1 kΩ Chip Resistor CRCW08051001FKEA Vishay

R3 12 kΩ Chip Resistor CRCW08051201FKEA Vishay

R4 22 kΩ Chip Resistor CRCW08052201FKEA Vishay

R5 5 kΩ Potentiometer 1224W Bourns

R6 1 kΩ Chip Resistor CRCW12061001FKEA Vishay

T1 5 Volt Regulator Micro 8 LP2951CDMR2G On Semiconductor

T2 NPN Transistor SOT-23 BC847ALT1G On Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1020 10

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1120

MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1220 12

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1020 10

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

Figure 15 MW6S010NR1(GNR1) Test Circuit Component Layout mdash 450 MHz

MW6S010N 450 MHz

C5

C10

C6C7 C8

C9 R6

C4

C2C3

B1

R5

C1R2 R1

R3

R4

T1

T2B2

C14

C13

C15

L1

C12

C11

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1120

MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1220 12

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1120

MW6S010NR1 MW6S010GNR1

11RF Device DataFreescale Semiconductor

TYPICAL CHARACTERISTICS mdash 450 MHz

I R L

I N P U T R E T U R N L O

S S ( d B )

A C P R ( d B c ) A L T 1 ( d

B c )

500400

IRL

Gps

ACPR

f FREQUENCY (MHz)

Figure 16 2-Carrier W-CDMA Broadband Performance Pout = 3 Watts Avg

minus21

minus6

minus9

minus12

minus15

VDD = 28 Vdc Pout = 3 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB

001 Probability (CCDF)

184

204

minus65

37

34

31

28

minus40

minus45

minus50

minus55

η D

D R A I N

E F F I C I E N C Y ( )

ηD

G p s

P O W

E R G A I N ( d B )

25

minus60 minus18

202

20

198

196

194

192

19

188

186

410 420 430 440 450 460 470 480 490

ALT1

IRL

f FREQUENCY (MHz)

Figure 17 2-Carrier W-CDMA Broadband Performance Pout = 75 Watts Avg

ηD

minus50

I R L

I N P U T R E T U R N L O S S ( d B )

A C P R ( d B c ) A L T 1 ( d B c )

500400minus14

minus4

minus6

minus8

minus10

165

19

minus55

55

50

45

40

minus30

minus35

minus40

minus45

η D

D R A

I N

E F F I C I E N C Y ( )

G p s P O W E R G A I N ( d B )

35

minus12

188

185

183

18

178

175

173

17

168

410 420 430 440 450 460 470 480 490

S11

f FREQUENCY (MHz)

Figure 18 Broadband Frequency Response

VDD = 28 VdcPout = 10 WIDQ = 150 mA

65050

5

30

minus25

0

minus5

minus15

minus20

S 1 1

S 2 1

minus10

25

20

15

10

100 150 200 250 300 350 400 450 500

S21

550 600

VDD = 28 Vdc Pout = 75 W (Avg) IDQ = 150 mA2minusCarrier WminusCDMA 10 MHz Carrier Spacing384 MHz Channel Bandwidth PAR = 85 dB 001 Probability (CCDF)

ALT1

ACPR

Gps

Figure 19 Single-Carrier N-CDMA ACPR ALT1

and ALT2 versus Output Power

minus80

Pout OUTPUT POWER (WATTS) AVG

minus10

minus20

minus30

minus40

minus70

01 1 10

minus50

ACPR

VDD = 28 Vdc IDQ = 150 mA

f = 450 MHz NminusCDMA ISminus95 Pilot

Sync Paging Traffic Codes 8

Through 13

A L T 1 amp A L T 2

C H A N N E L P O W E R

d B c

A C P R

A D J A C E

N T C H A N N E L P O W E R R A T I O ( d B c )

minus60

ALT2

ALT1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1220 12

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1220 12

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

f

MHz

Zsource

Ω

Zload

Ω

400

420

440

90 + j38

96 + j66

88 + j54

150 + j14

143 + j33

150 + j47

VDD = 28 Vdc IDQ = 150 mA Pout = 10 W PEP

460

480

500

106 + j95

115 + j139

107 + j126

163 + j73

164 + j111

169 + j127

Figure 20 Series Equivalent Source and Load Impedance mdash 450 MHz

Zsource = Test circuit impedance as measured fromgate to ground

Zload = Test circuit impedance as measuredfrom drain to ground

Zsource

Zload

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

f = 400 MHz

Zo = 25 Ω

Zload

Zsource

f = 500 MHz

f = 400 MHz

f = 500 MHz

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1320

MW6S010NR1 MW6S010GNR1

13RF Device DataFreescale Semiconductor

PACKAGE DIMENSIONS

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1420 14

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1520

MW6S010NR1 MW6S010GNR1

15RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1620 16

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1720

MW6S010NR1 MW6S010GNR1

17RF Device DataFreescale Semiconductor

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1820 18

RF Device DataFreescale Semiconductor

MW6S010NR1 MW6S010GNR1

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 1920

MW6S010NR1 MW6S010GNR1

19RF Device DataFreescale Semiconductor

PRODUCT DOCUMENTATION TOOLS AND SOFTWARE

Refer to the following documents to aid your design process

Application Notes

bull AN1907 Solder Reflow Attach Method for High Power RF Devices in Plastic Packages

bull AN1949 Mounting Method for the MHVIC910HR2 (PFP- 16) and Similar Surface Mount Packages

bull AN1955 Thermal Measurement Methodology of RF Power Amplifiers

bull AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages

Engineering Bulletinsbull EB212 Using Data Sheet Impedances for RF LDMOS Devices

Software

bull Electromigration MTTF Calculator

bull RF High Power Model

For Software and Tools do a Part Number search at httpwwwfreescalecom and select the ldquoPart Numberrdquo link Go to the

Software amp Tools tab on the partrsquos Product Summary page to download the respective tool

REVISION HISTORY

The following table summarizes revisions to this document

Revision Date Description

4 Dec 2008 bull Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for

standardization across products p 1

bull Removed Total Device Dissipation from Max Ratings table as data was redundant (information already

provided in Thermal Characteristics table) p 1

bull Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150degC p 1

bull Operating Junction Temperature increased from 200degC to 225degC in Maximum Ratings table related

ldquoContinuous use at maximum temperature will affect MTTFrdquo footnote added and changed 200degC to 225degC in

Capable Plastic Package bullet p 1

bull Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q) and added ldquoMeasured in Functional

Testrdquo On Characteristics table p 2

bull Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection

Dynamic Characteristics table p 2bull Updated Part Numbers in Tables 6 7 Component Designations and Values to RoHS compliant part

numbers p 3 9

bull Removed lower voltage tests from Fig 10 Power Gain versus Output Power due to fixed tuned fixture

limitations p 6

bull Replaced Fig 12 MTTF versus Junction Temperature with updated graph Removed Amps2 and listed

operating characteristics and location of MTTF calculator for device p 7

bull Replaced Case Outline 1265-08 with 1265-09 Issue K p 1 13-15 Corrected cross hatch pattern in

bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed

from Min-Max 290-320 to 290 Min E3 changed from Min-Max 150-180 to 150 Min) Added JEDEC

Standard Package Number

bull Replaced Case Outline 1265A-02 with 1265A-03 Issue C p 1 16-18 Corrected cross hatch pattern and

its dimensions (D2 and E2) on source contact (D2 changed from Min-Max 290-320 to 290 Min E3

changed from Min-Max 150-180 to 150 Min) Added pin numbers Corrected mm dimension L for

gull-wing foot from 490-506 Min-Max to 046-061 Min-Max Added JEDEC Standard Package Number

bull Added Product Documentation and Revision History p 19

5 June 2009 bull Modified data sheet to reflect MSL rating change from 1 to 3 as a result of the standardization of packing

process as described in Product and Process Change Notification number PCN13516 p 2

bull Added AN3789 Clamping of High Power RF Transistors and RFICs in Over- Molded Plastic Packages to

Product Documentation Application Notes p 19

bull Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software p 19

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom

8122019 MW6S010N

httpslidepdfcomreaderfullmw6s010n 2020

MW6S010NR1 MW6S010GNR1

Information in this document is provided solely to enable system and software

implementers to use Freescale Semiconductor products There are no express or

implied copyright licenses granted hereunder to design or fabricate any integrated

circuits or integrated circuits based on the information in this document

Freescale Semiconductor reserves the right to make changes without further notice to

any products herein Freescale Semiconductor makes no warranty representation or

guarantee regarding the suitability of its products for any particular purpose nor does

Freescale Semiconductor assume any liability arising out of the application or use of

any product or circuit and specifically disclaims any and all liability including without

limitation consequential or incidental damages ldquoTypicalrdquo parameters that may be

provided in Freescale Semiconductor data sheets andor specifications can and dovary in different applications and actual performance may vary over time All operating

parameters including ldquoTypicalsrdquo must be validated for each customer application by

customerrsquos technical experts Freescale Semiconductor does not convey any license

under its patent rights nor the rights of others Freescale Semiconductor products are

not designed intended or authorized for use as components in systems intended for

surgical implant into the body or other applications intended to support or sustain life

or for any other application in which the failure of the Freescale Semiconductor product

could create a situation where personal injury or death may occur Should Buyer

purchase or use Freescale Semiconductor products for any such unintended or

unauthorized application Buyer shall indemnify and hold Freescale Semiconductor

and its officers employees subsidiaries affiliates and distributors harmless against all

claims costs damages and expenses and reasonable attorney fees arising out of

directly or indirectly any claim of personal injury or death associated with such

unintended or unauthorized use even if such claim alleges that Freescale

Semiconductor was negligent regarding the design or manufacture of the part

Freescale and the Freescale logo are trademarks of Freescale Semiconductor Inc

All other product or service names are the property of their respective owners

copy Freescale Semiconductor Inc 2005-2006 2008- 2009 All rights reserved

How to Reach Us

Home Pagewwwfreescalecom

Web Supporthttpwwwfreescalecomsupport

USAEurope or Locations Not ListedFreescale Semiconductor IncTechnical Information Center EL5162100 East Elliot Road

Tempe Arizona 852841-800-521-6274 or +1-480-768-2130wwwfreescalecomsupport

Europe Middle East and AfricaFreescale Halbleiter Deutschland GmbHTechnical Information CenterSchatzbogen 781829 Muenchen Germany+44 1296 380 456 (English)+46 8 52200080 (English)+49 89 92103 559 (German)+33 1 69 35 48 48 (French)wwwfreescalecomsupport

JapanFreescale Semiconductor Japan LtdHeadquarters ARCO Tower 15F1-8-1 Shimo-Meguro Meguro-kuTokyo 153-0064Japan0120 191014 or +81 3 5437 9125supportjapanfreescalecom

AsiaPacificFreescale Semiconductor China LtdExchange Building 23FNo 118 Jianguo RoadChaoyang DistrictBeijing 100022China+86 10 5879 8000supportasiafreescalecom

For Literature Requests OnlyFreescale Semiconductor Literature Distribution Center1-800-441-2447 or +1-303-675-2140Fax +1- 303-675- 2150LDCForFreescaleSemiconductorhibbertgroupcom