© 2004 Hewlett-Packard Development Company, L.P.
Nanoimprint lithography Nanoimprint lithography at Hewlettat Hewlett--PackardPackard
William M. TongWilliam M. TongQuantum Science Research, HP Labs (Palo Alto)Quantum Science Research, HP Labs (Palo Alto)Applied Molecular Systems, Inkjet Printing Platform (Corvallis)Applied Molecular Systems, Inkjet Printing Platform (Corvallis)Hewlett Packard CompanyHewlett Packard [email protected]
2004Ž9ž21 William M. Tong 2
OutlineOutline
•• Overview of hp’s portfolio in nanotechnologyOverview of hp’s portfolio in nanotechnology
low-cost nanoscale fabrication
•• The problems with photolithographyThe problems with photolithography
Potential solutions will only get more expensive: only highfabricated.
•• Why hp is interested in nanoimprint lithographyWhy hp is interested in nanoimprint lithographyA disruption technology that can provide low-cost, high tech solution for
our customers.
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Nanotechnology research @ hpNanotechnology research @ hp
Lawrence Berkeley National LabLawrence Berkeley National LabDr. Deirdre OlynickDr. Deirdre OlynickDr. Alex LiddleDr. Alex Liddle
UCLAUCLAProf. F. Stoddart Prof. F. Stoddart –– Dept. Chemistry & Dept. Chemistry & BiochemBiochemProf. Prof. Yong Chen Yong Chen –– Dept. Mech. Eng. Dept. Mech. Eng.
Caltech Caltech Prof. Jim Heath Prof. Jim Heath –– Dept. ChemistryDept. Chemistry
Quantum Science Research, Palo Alto
Director Dr. R. Stanley Williams Nanimprint: Dr. William Tong
Dr. Gun-Young Jung Dr. Wei Wu
Nanofabrication: Dr. Saif IslamMs. Xuema Li
Chemistry: Mr. Douglas A. A. OhlbergDr. Zhiyong Li
Bottoms-up fab: Dr. Ted Kamins Dr. Shashank Sharma
Electrical metrology: Dr. Duncan Stewart Comp architecture: Mr. Phil Kuekes
Mr. Greg Snider Mr. Warren Robinett
Theory Dr. Alexander Bratkovski
Applied Molecular Sys., Corvallis
Managers: Ms. Susan RichardsDr. Ken AbbotDr. James Stasiak
Nanofabrication: Mr. Jim EllensonMr. Tim Hostetler Dr. Ken KramerDr. Kevin PetersDr. Jennifer WuDr. Qingqiao WeiDr. Tim Meyer
Chemistry: Dr. Garry HinchDr. Tom Etheridge
Electronic materials: Dr. Sven Moeller Dr. Randy Rannow
*Funding partly provided by DARPA*Funding partly provided by DARPA
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Areas of research for QSRAreas of research for QSR
•• Why go “nano”?Why go “nano”?• Because certain intrinsic properties of
matter, e.g color, chemical reactivity, and electrical resistivity, depends strongly on the size and shape at the nanoscale.
Molecular electronicsMolecular electronics
EOM
mux/demux
PD
λ drop λ add
Photonics
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n-SiNW
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Sensors
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Y. Chen, G. Jung, et al. “Nanoscale molecular-switch crossbar circuits”, Nanotechnology, 14, 462 (2003)
Nanoimprinted crossbar molecular switch Nanoimprinted crossbar molecular switch memorymemory
100 nm
Cell density : 6.4 Gbit/cm2
Switch off"0"
Switch on"1"
Read bit(measure
resistance)
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“HPinvent”R
(106
ohm
)
H P i n v e n t
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Y. Chen, G. Jung, et al. “Nanoscale molecular-switch crossbar circuits”, Nanotechnology, 14, 462 (2003)
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SubSub--50 nm hp resolution achieved50 nm hp resolution achieved
G. Y. Jung (HP Labs), to appear in Nano LettersG. Y. Jung (HP Labs), to appear in Nano Letters
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Vision: Nanophotonic crystal waveguide for on board communicationsVision: Vision: NanophotonicNanophotonic crystal waveguide for crystal waveguide for on board communicationson board communications
Advantages:Advantages:üüHigh speedHigh speedüüLow lossLow lossüüCost effectiveCost effective
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Photonic crystal waveguide successfully Photonic crystal waveguide successfully fabricated by nanoimprint lithographyfabricated by nanoimprint lithography
----Jim Ellenson, Tim Jim Ellenson, Tim HostetlerHostetler, Ray Beausoleil, , Ray Beausoleil, Hewlett PackardHewlett Packard
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c-ss-DNA
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DNA identification sensor: toward single DNA identification sensor: toward single molecule detectionmolecule detection
ØØ Use complimentary DNA as a Use complimentary DNA as a selective receptor.selective receptor.
ØØ Captured DNA alters current Captured DNA alters current through nanowirethrough nanowire T
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Charge in a DNA can influence the Charge in a DNA can influence the current of a nanowirecurrent of a nanowire
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Successful sensing of DNA oligonucleotides on Si nanowire plateformSuccessful sensing of DNA Successful sensing of DNA oligonucleotides oligonucleotides on Si nanowire on Si nanowire plateformplateform
50nmn-Si Nanowire
50% drop of conductance
20µm
50nm
Top surface
1µm2Zhiyong Li, HPLZhiyong Li, HPL
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Why hp is interested in nanoimprint Why hp is interested in nanoimprint lithography?lithography?
•• New applications emerging from nanotechnology research require lNew applications emerging from nanotechnology research require lowow--cost, high volume manufacturing of nanoscale devicecost, high volume manufacturing of nanoscale device
•• Currently, inkjet cartridges are made with trailing edge photoliCurrently, inkjet cartridges are made with trailing edge photolithography thography (I(I--line 365 nm)line 365 nm)
•• Hp is not interested in making nanoimprinter. Our goal is to heHp is not interested in making nanoimprinter. Our goal is to help enable lp enable the technologythe technology
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Moore’s LawMoore’s Law
Increase in processor speed is largely achieved by shrinking of Increase in processor speed is largely achieved by shrinking of the devicesthe devices
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Moore’s Second Law: Cost of a chip fab will Moore’s Second Law: Cost of a chip fab will double every two yearsdouble every two years
Cost of Fab$60B
$50B
$40B
360B
$20B
$10B
$0B1992 1995 1998 2001 2004 2007 2010
Year
MooreMoore’’s laws law
Consequence: Consequence: As device size shrink, only high cost devices in As device size shrink, only high cost devices in
large volumes can be produced.large volumes can be produced.(Pentiums)(Pentiums)
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Photolithography is hitting a brick wallPhotolithography is hitting a brick wall
Immersion lithography: $30M!!Immersion lithography: $30M!! EUV Lithography: >$50M!!!EUV Lithography: >$50M!!!
Problem: Problem: features size (>90 nm) is features size (>90 nm) is smaller than wavelength of smaller than wavelength of light usedlight used
Cost of a stepper today: $20M!Cost of a stepper today: $20M!
90 nm90 nm
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Problem with EUVL: throughputProblem with EUVL: throughput
•• Targetted Targetted for 32 nm node (Y2013)for 32 nm node (Y2013)•• Uses 13 nm photons.Uses 13 nm photons.•• Requires Requires multilayer multilayer maskmask
•• IssuesIssues• Defects on mask easy to print• A high power EUVL photon source
is yet to be found.• Photons have high energy, therefore
low countsà Line edge roughness.• Chemically-Amplified Resists are
needed (CAR)
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Exposed Exposed areaarea
Acid diffusion limits linewidth to ~35 nmAcid diffusion limits linewidth to ~35 nm
Source: Source: PostnikovPostnikov, S. V. et al., , S. V. et al., ““ A study of A study of rosolution rosolution limits due to intrinsic bias in chemically limits due to intrinsic bias in chemically amplified amplified photoresistsphotoresists,,”” to appear in JVST B. (Grant Willson, UT Austin)to appear in JVST B. (Grant Willson, UT Austin)
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Key challenges in nanoimprint lithographyKey challenges in nanoimprint lithography
•• AlignmentAlignment• No expensive optics to take advantage of.• Solution in development: Moire pattern• Sub-pixel detection: 1/40 pixel (1 pixel ~ 100nm) feasible by
commercial software e.g. Cognex
•• Mold patterningMold patterning• Mold is 1x instead of 4x as in current photomask
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Patterning OPC features requires unprecedented Patterning OPC features requires unprecedented accuracy on accuracy on maskmakingmaskmaking
•• SubSub--wavelength printing puts wavelength printing puts a great burden on the mask a great burden on the mask patterning.patterning.
•• OPC, Assist features, phase OPC, Assist features, phase shift mask push cost shift mask push cost • Current mask (90nm
generation) cost >$1M per set
Source: T. Newman et al., Source: T. Newman et al., ““Evaluation of OPC mask printing with a raster scan Evaluation of OPC mask printing with a raster scan pattern generationpattern generation”” (2002)(2002)
400nm400nm
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EE--beam patterning can already achieve 30 nm hpbeam patterning can already achieve 30 nm hp
Nanoimprint mold patterned byNanoimprint mold patterned byDeirdre Olynick, Alex Liddle, Lawrence Berkeley National LaboratDeirdre Olynick, Alex Liddle, Lawrence Berkeley National Laboratoryory
Dense lines @ 30 nm halfDense lines @ 30 nm half--pitchpitch
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Nanoimprint lithography can achieve the same Nanoimprint lithography can achieve the same resolution as photolithography, but is much more costresolution as photolithography, but is much more cost--effectiveeffective
Immersion lithography: $30M!!Immersion lithography: $30M!! EUV Lithography: >$50M!!!EUV Lithography: >$50M!!!
Problem: Problem: features size (>90 nm) is features size (>90 nm) is smaller than wavelength of smaller than wavelength of light usedlight used
Cost of a stepper today: $20M!Cost of a stepper today: $20M!
90 nm90 nmNanonex Nanonex machines machines pic pic herehere
CommericalCommerical nanoimprinter: $0.5nanoimprinter: $0.5--1.6M1.6M
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Nanoimprint lithography is on the ITRS Nanoimprint lithography is on the ITRS roadmap 2003 as an official NGLroadmap 2003 as an official NGL
HP is interested in nanoimprint lithography HP is interested in nanoimprint lithography because it enables lowbecause it enables low--cost, highcost, high--volume volume manufacturing, potentially allowing us to manufacturing, potentially allowing us to
leapfrog over our competitors who employ leapfrog over our competitors who employ photolithographyphotolithography
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SummarySummary
•• Overview of hp’s portfolio in nanotechnologyOverview of hp’s portfolio in nanotechnology• Molecular electronics, photonics, sensors• All require low-cost nanoscale fabrication
•• The problems with photolithographyThe problems with photolithography• Cause: Features to be patterned are smaller than the wavelength of light
used.• Potential solutions will only get more expensive: only high cost devices can
be fabricated. (Intel Pentiums)
•• Why hp is interested in nanoimprint lithographyWhy hp is interested in nanoimprint lithography• A disruption technology that can provide low-cost, high tech solution to
fabricate our nanoscale devices.
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Thank you!Thank you!