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NANOTECHNOLOGIES For 21th Century IV: Nanotech research and applications Device applications of graphene prepared by chemical vapor deposition Shinji Koh College of Science and Engineering Dep. of Electrical Engineering and Electronics Aoyama Gakuin University
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Page 1: NANOTECHNOLOGIES For 21th Century IV: Nanotech research …phantomsfoundation.com/1AND2DM/2020/Presentations/Nanoworks… · NANOTECHNOLOGIES For 21th Century IV: Nanotech research

NANOTECHNOLOGIES For 21th Century IV: Nanotech research and applications

Device applications of graphene prepared by

chemical vapor deposition

Shinji Koh College of Science and Engineering

Dep. of Electrical Engineering and ElectronicsAoyama Gakuin University

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Aoyama Gakuin UniversityPrivate UniversityFounded in 1874

Faculty member ~600Undergradauates ~17,000Graduate students ~1,200

KANAGAWASagamihara campus

I work here!

TOKYOAoyama campus

SHIBUYA

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Nature Index2018

5th positionJapanese academic

institution

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1. CVD growth of graphene on Ir(111)/sapphire

2. Device applications of CVD graphene grown on Cu

a. Optically transparent antennas

b. Free chlorine sensors

OUTLINE

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2-D honeycomb lattice of carbon atoms

GRAPHENE

• Ultrathin ~0.3 nm

• High Conductivity of

Electricity and Heat

• High Mechanical Strength

• High Optical Transparency

(97.7%)

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CVD Growth of Graphene

Chemical vapor deposition (CVD)

Large-area and high-quality graphene sheet

Scalable technology

Suitable for industrial applications

Graphene prepared by scotch tape method

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CVD Growth on Cu substrate

Cu metal catalyst substrate (~0.035 mm)

Low cost

Low carbon solubility

Self-limiting growth of

monolayer graphene

Inte

nsity (

a.u

.)

3000250020001500

Raman Shift (cm-1

)

G

2D

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Transfer of Graphene

We can transfer graphene ontoVarious types of substrates.

Quarts glass, PET, PEN, etc.

→ Device ApplicationsOne-atom-thick graphenetransferred onto SiO2/Si

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Poly-crystalline grapheneon Poly-crystalline Cu

single crystalline graphene

Single Crystalline CVD Graphene

Single crystalline CVD graphene is favorableto utilize 100% of graphene’s properties.

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CVD Growth on Iridium

S. Koh, Y. Saito, H. Kodama, and A. Sawabe,

Appl. Phys. Lett., 109, 023105 (2016).

IridiumHigh melting temperature (~2400℃)Chemical stabilityLow carbon solubility (0.041 at.%)

We demonstrated CVD growth of single-crystalline monolayer grapheneon Iridium metal catalyst substrate

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Electrochemical Transfer

Electrochemical peeling of graphene using H2 gas bubble generation

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Reusability of Ir(111)/Sapphire

3rd

2nd

1st20 µm

1st 2nd 3rd

Inte

nsity (

a.u

.)

3000250020001500

Raman shift (cm-1

)

Reusability of Ir/sapphirein multiple cycles of

CVD and transfer processeswas demonstrated.

A. Sakurai, M. Niki, T. Watanabe, A. Sawabe and S. Koh, To be appeared in JJAP (2020)

S. Koh, Y. Saito, H. Kodama, and A. Sawabe,Appl. Phys. Lett., 109, 023105 (2016).

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1. CVD growth of graphene on Ir(111)/sapphire

2. Device applications of CVD graphene grown on Cu

a. Optically transparent antennas

b. Free chlorine sensors

c. Luminescent graphene

OUTLINE

Doctor course studentMr. Shohei Kosuga

JSPS’s DC2 Research Fellowship for Young Scientists

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Backgrounds: Transparent Antennas

Various things are connected each other

in the network.

High frequency ~27 GHz

Propagation lossbecomes higher.

Propagation distance becomes shorter.

Internet of Things 5G system

We need many ANTENNAS!ANTENNA, ANTENNA, ANTENNA!

Everywhere!

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Optically Transparent Antennas

Optically transparent antennasmaintain transparency of objectsdo not change the landscape.

Metal(Ag) mesh antennasITO transparent antennas

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CVD Graphene for Antennas

Metal free material

High optical transparency

(~97.7 %)

Flexibility

Excellentelectrical conductivity

UltralightTunableelectrical conductivity

𝛔 = qnμ

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Graphene Transparent Antennas

5 mm

Feeding line

Antenna elements

(Graphene)

Au (power feeding)

Graphene antenna elements• Transparency (~97 %)• High conductivity• Flexibility• Metal Free

S. Kosuga et al., Appl. Phys. Lett. 110, 233102 (2017). S. Kosuga et al., PIERS, Singapore (2017)

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S. Kosuga et al., Microwave. Opt. Technol. Lett. 60, 2992-2998 (2018).S. Kosuga et al., 30th Asia-Pacific Microwave Conference, Kyoto, Japan, 7 Nov. (2018)

We demonstrated microwave radiation at ~20 GHzfrom monolayer graphene antenna.

Dielectric behavior of monolayer grapheneHigh Sheet resistance Rs ~ 700 Ω/sq

Graphene Transparent Antennas

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Stacking & Doping

Monolayer 3 layers

Sheet resistivity

700 Ω/sq. 80 Ω/sq.

Optical transparency at 550 nm

97.0% 90.6%

Chemical p-doping

Fabrication of transparent antennasis now underway.

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1. CVD growth of graphene on Ir(111)/sapphire

2. Device applications of CVD graphene grown on Cu

a. Optically transparent antennas

b. Free chlorine sensors

OUTLINE

Assistant ProfessorDr. Takeshi Watanabe

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ISD-Vg

Constant VSD

Solution Top-Gated GFET

Conductivity modulation by top-gating

Vg0

ISD

FermiLevel

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Top-gated GFET in Electrolyte

Positive Gate Voltage Vg

ISD-Vg

e e e e

+ + + +

+

Electron increases (n-type).

FermiLevelgo up

ISD

increases

--- -

+++

Vg0

ISD

Constant VSD

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GFET Free Chlorine Sensors

Negative Gate Voltage Vg

ISD-Vg

-

--

-

++

++

h h h h- - - -

Hole increases (p-type).

FermiLevel

go down

ISD

increases

Top-gated GFET in Electrolyte

ISD-Vg

Vg0

ISD

Constant VSD

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Dirac pointE”F

P-type

E’F

N-type

N-typeP-type

Charged CarrierHoles

Ambipolar Characteristics of GFET

Vg

0

ISD

Charged CarrierElectrons

Dirac point

Dirac point

ISD-Vg

Dirac pointEF at Vg=0

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GFET-Based Sensors

Ions, Molecules etc.

Charge transfer

Graphene

Dirac point

Vg

0

ISD

Charge transfer at the graphene surfacecauses carrier doping, resulting in

Shift of Fermi Level.

Charge transfer intaractionis observed as the shift ofISD-Vg curves.

e

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GFET Free Chlorine Sensors

Chlorine for disinfection of water

Too LowNot effective at killing bacteria and viruses

Too HighHarmful for human

Conventional methods

Colorimeteric method: Not applicable to continuous measurementsElectrochemical method using Pt: High cost, Oxidation of Pt surface

Free chlorine: hypochlorous acid (HOCl) and hypochlorite (OCl-) ion

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GFET Free Chlorine Sensors

Dirac point shifts to positive voltageas free chlorine concentration increases.

Graphene channel

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GFET Free Chlorine Sensors

Detection ofFree Chlorine Conc.0.08 ~ 40 ppm

High sensitivitywas obtained with

Graphene channelGraphene top gate

Chlorine sensor.

JSAP Autumn meeting 2019, 21a-PB1-44, Hokkaido Univ. 21th Sep. (2019).

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Summary

1. CVD growth of graphene on Ir(111)/sapphire

CVD growth of single-crystalline monolayer graphene

Reusability of Ir(111) substrates

2. Device applications of CVD-grown graphene

Optically transparent antennas

Free chlorine sensors

Nippon Sheet Glass Foundation for Materials Science and Engineering


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