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7/28/2019 Nanowire Sensor, Nano-Tera Conference 2013
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PI: Christian Schnenberger
Department of Physics andSwiss Nanoscience Insitute
@ University of Basel
Nanowire Sensor
Integrateable Si Nanowire Sensor
Platform for Ion- and Biosensing
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More than Moore
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Electronic Biochip Concept
label free, disposable (cheap) electronic chip
biomolecular-
molecular
interface
electronic-side
electronic
interface
Lieber et al. Science 2001
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Ion Sensitive FET (IS-FET)
source drain
channel conductance (i.e. threshold)depends on gate charge
p-channel, threshold regime
(gate potential)
--
-
-
(source-draincurrent)
--
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Ion Sensitive FET (IS-FET)
source drain
channel conductance (i.e. threshold)depends on gate charge
(gate potential)
(source-draincurrent)
-
- -
-
- -
p-channel, threshold regime
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Ion Sensitive FET (IS-FET)
source drain
channel conductance (i.e. threshold)depends on gate charge
(gate potential)
(source-draincurrent)
-
-
-
-- -
-
e.g. heparime binding on protamie
SHIFT
p-channel, threshold regime
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Concept & Team
AnalyteReceptor
TransducerSignal processing
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Nanowire fabrication
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Nanowire fabrication
PMMA
80nm
145nm
~10nm
p-type (100) SOI
SiO2
Si handle wafer
Si
step 1.
step 4.+5. step 6.+7.
step 11.to14.
metal
SU-8
step 2.+3.
wire length:6um
width: 100nm-1um
silicon
silicon oxide
resist
metal
ALD oxide
epoxy
100nm
Weff= Wtop + 2Wwalls
Kristine Bedner et al.
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Nanowire fabrication
operation enhancement mode
insulator Layer HfO2, tins = 5 nm,
poly-Si Gates wg = 25 nm, hg = 50 nm
fin Body hSi = 100 nm, wSi = 50nm
doping Na = 51016
A partially double-gated fin field effect transistor (DG-FinFET) is the
electronic sensing architecture.
S.Rigante, M.Najmzadeh and A. M. Ionescu, EPFL
_
_
_
_
_
_
_
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Nanowire fabrication
Solid nanowire array
Particle based nanowire array
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SOI-based NWs
48 silicon nanowires/sample
top width: 100nm 1m
5m
nanowire
drain
micro-
channel
AlSi contacts
wire
bonds
back gatecontact
epoxy
SU-8
10mm
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FinFET NWsOne die incorporates:
o FinFET based sensors and metal gate transistors
(single and multi wires)
o Amplifying architectures based
on two FinFET components
Au 25 m wire ball bonding
Epotecny conductive glue
SU-8
AlSi connections
Sensor
FinFETs
SU-8
AlSi
SiO2
Si Fin
Si Bulk
PtA-B
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Microfluidics
Devices location in -fluidic channels
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in the lab in operation
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System Concept
PCBSi-NW chip CMOS chip
Micro fluidics
low-noise circuitry
on chip biasing and modulation technique
A/D conversion
nanowires can be integrated on the chip orcan be interfaced via a PCB board
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System Architecture
Paolo Livi et al.
16 nanowires can be interfaced in parallel voltage across each nanowire is kept constant, and the current flowing through is measuredTwo different analog-to-digital converter architectures are used (12 bits resolution) Current range: 1 nA to 5 A
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CMOS readout
Paolo Livi et al.
Power consumption: 35 mW
I2F resolution:
8 bits (50 pA
1 A range) 10 bits (10 nA 400 nA range)
Sigma-Delta resolution: 12 bits in the range 2 A
18
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System Architecture
Nanowire Sensor Chip
CMOS Readout ChipPaolo Livi et al.
VDS = 200 mV
sigma-delta modulator
read-out of 4 Si-NW, 9.-10. Nov. 2011
S
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System Architecture
Cross section: 31 nm x 15 nm
Length: 380 m Patterned via e-beam and lift-off
SU-8 microchannel for
measurement in liquid
0 50 100 150 200 250 300 350 400 450 500142
143
144
145
146
Time [s]
Resistance[k
]
Average
Measurement
Adsorption of Cl-
(resistance
increases)
Adsorption of Na+
(resistance
decreases)
Reference Electrode
Voltage
+ 500 mV
- 500 mV
0 V
S
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Sensor parameters
o sensitivity
o selectivityo referencing
o resolution
o signal-to-noise
o reproducibility
o stability
o drift
o response time
extensive studies addressing these parameters using
Si nanowires with ALD passivation
S t
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Sensor parameters
-0.5 0.0 0.5 1.0 1.5 2.00
2
4
6
8
Vsd
=0.1V
NW 1
NW 2
G(S)
Vref
(V)
Vbg
=-6V
pH 7
10-10
10-9
10-8
10-7
10-6
10-5
width =1m
G(S)
120mV/dec
G(
S)
G(S)
Vref (V)
reproducibility
pH response & sensitivity
-0.5 0.0 0.5 1.0 1.5 2.00.0
1.5
3.0
4.5
6.0
7.5
9.0
120mV/dec
Vsd
=0.1V
G(S)
Vref(V)
width =1m
pH 3, 5, 7, 9
Vbg
=-6V
10-10
10-9
10-8
10-7
10-6
10-5
G(S
)
G(
S)
G(S
)
Vref (V)
with good ALD oxides, HfO2 and Al2O3always reach maximum sensitivity of
~ 60 mV/pH
(low p-doped wires in accumulation with
p+-implanted and alloyed contacts)
N t li it d l bilit
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Nernst limit and scalability
Vbg
VrefVlg
A
V
drain
source
VsdA
max sensitivity down to the smallestnanowire with < 100 nm in width both
for Al2O3 and HfO2
K. Bedner et al.
S t
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibility and low hysteresis
Si ISFET f
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Si-ISFET: reference
octadecyldimethylmethoxysilane
(C18 alkane silane) passivation
A. Tarasov et al. Langmuir 28, 9899 (2012)
0 1 2 3 4 5 6 70
20
40
60
80
100
120
contactangle[]
time [days]
Contact angle measurements:
S t
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibility and low hysteresis
b) a transistor that does not respond to protons (reference)
S ifi i
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Specific ion sensor
Detection of potassium
- differential signal: active and control channel
Vth= (Vth,active Vth,control) = 39 mV/dec,
negative Vth
, due to adsorption of positively
charged K+
- selective detection
control experiment: no response to Na+
M. Wipf et al.
S ifi i
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Specific ion sensor
Detection of sodium
- differential measurement setup
elimination of non-specific Cl- ion adsorptoin,
drift, etc.Vth= 44 mV/dec
- selective detection
control experiment: no response to K+
S t
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibility and low hysteresis
b) a transistor that does not respond to protons (reference)
c) a transistor that can sense other ions selectively
N i M t
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Noise Measurements
A. Tarasov and K. Bedner et al. , e.g. APL, 98, 012114, (2011)
-1.5 -1.0 -0.5 0.0 0.5 1.0 1.50
1
2
3
4
5
6
100nm
200nm
400nm
1m
G(S)
Vgate
(V)
Al2O
3, V
sd=0.1V
1 10 10010
-15
10-14
10-13
10-12
10-11
10-10
10-9
10-8
10-7
10-6
10-5
1.16M
1.49M
3.14M
5.73M
9.26M
14.07M
28.14M
58.60M
321k
321k
498k
802k
S
v(V2 rm
s/Hz)
f (Hz)
67mM, pH 7, Vsd
=0.1V
Wtop
=100nm, Al2O
3 1/f
time
signal
FFT
Noise Measurements
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Noise Measurements
- SVG noise increases with decreasing SiNW width
after normalization by SVGWeff : same noise for all the nanowire widths
- sensor resolution: SVG= 110-5V/Hz1/2, which corresponds to ~100ppm of pH
101
102
103
10-10
10-9
SVG
at10Hz(V2/Hz)normalizedbyW
eff
100nm
200nm
400nm1m
RWeff
(cm)
pH 7 solution
SiNW regimecontact regime
101
102
103
10-10
10-9
SVG
at10Hz(V2/Hz)
100 nm
200 nm
400 nm1 m
RWeff
(cm)
pH 7 solution
noise-source = trapping detrapping noise
Sensor parameters
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibilty and low hysteresis
b) a transistor that does not respond to protons (reference)
c) a transistor that can sense other ions selectively (and fast)
d) resolution can reach 100ppm/sqrt(Hz) for a 1m-wide wire.
Note: the resolution (signal-to-noise) is better for wider wires !!!(nano is not always better)
Reproducibility & Stability
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Reproducibility & Stability
-0.5 0.0 0.5 1.0 1.5 2.00
2
4
6
8
Vsd
=0.1V
NW 1
NW 2
G(
S)
Vref
(V)
Vbg
=-6V
pH 7
10-10
10-9
10-8
10-7
10-6
10-5
width =1m
G(S)
120mV/dec
0 24 48 72 96 1200.200
0.205
0.210
0.215
0.220
0.225
0.230
0.235
Vth
[V]
Time (h)
HfO2
gate oxide
pH 6 buffer solution
Stability measurements 5.5 days
FinFET sample (EPFL) 8nm HfO2 gate oxpH6 buffer solution
4 different nanowires Max. Drift ~2mV/day differential drift ~ 0mV
Sensor parameters
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibilty and low hysteresis
b) a transistor that does not respond to protons (reference)
c) a transistor that can sense other ions selectively (and fast)
d) resolution can reach 100ppm/sqrt(Hz) for a 1m-wide wire.
Note: the resolution (signal-to-noise) is better for wider wires !!!(nano is not always better)
e) reproducible and high long term stability
Sensor parameters
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Sensor parameters
we have
a) a transistor that maximally responds to protons (sensor)with high reproducibilty and low hysteresis
b) a transistor that does not respond to protons (reference)
c) a transistor that can sense other ions selectively (and fast)
d) resolution can reach 100ppm/sqrt(Hz) for a 1m-wide wire.
Note: the resolution (signal-to-noise) is better for wider wires !!!(nano is not always better)
e) reproducible and high long term stability
what about biomolecules ???
Smallmolecule
Si
HN
O
O
O
O
O
HO
OHOH
NHAc
~10 nm
~1 nm
Antibody
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Protein Sensing II (FimH)
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Protein Sensing II (FimH)
strongly lectin binding glycoconjugate ligand inactive glycoconjugate control
buffer: 20mM HEPES, 150 mM NaCl, 1mM CaCl2, pH=7.4
2 g/mL =107 nM FimH 10 g/mL = 536 nM FimH
O
HOHO
OH
O
OH
OH
O
2 g/mL =107 nM FimH 10 g/mL = 536 nM FimH
Jolanta Kurz, Arjan Odedra Arjan,
Florian Binder and Giulio Navarra
Conclusions
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Conclusions
1. maximum sensitivity (Nernst limit) can be achieved (Al2O3 and HfO2)
2. oxide surfaces (Al2O3 and HfO2) can be highly selective to protons(yielding ideal pH sensor up to buffer conc. of 10 mM)
3. maximum sensitivity also for the narrowest nanowires
4. charge detection limit best for the narrowest wire, but
5. highest resolution in concentration best for wide wires
6. full passivation possibleideal reference electrode
7. full sensitivity with high selectivity to other ions can be achieved (here
tested K) on functionalized electrodes
8. unclear yet (and also in the literature) whether useful for direct biomolecule
sensing
ISFET application
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ISFET application
ion-torrent
Thanks to
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Thanks to....
Michel Calame
Uni Basel
physics
Oren
KnopfmacherWangyang Fu
Alexey TarasovChristian
Schnenberger
Beat Ernst
EPFL
Adrian Ionescu Kristine Bedner
Bernd
DielacherJolanta KurzUwe Pieles
Andreas
HierlemannPaolo Livi
Arjan Odedra
Sara RiganteMohammadNajmzadeh
Janos Vrs
Robert
MacKenzie
Yihui Chen
BirgitPivnranta
VitaliyGuzenko
ChristianDavid
ETHZ UniBas
pharma
Jens Gobrecht
PSI
D-BSSEFHNW
Matthias Sreiff
Sensirion
Mathias Wipf
RenatoMinamisawa
Ralph Stoop
Floriian Binder
Thanks to
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Thanks to ...
Felix Mayer
CEO Sensirion
Matthias Sreiff
http://localhost/var/www/apps/conversion/tmp/scratch_4/Sensirion_Support.ppt