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© Semiconductor Components Industries, LLC, 2014 October, 2016 - Rev. 3 1 Publication Order Number: NCP1032/D NCP1032 Low Power PWM Controller with On-Chip Power Switch and Startup Circuits for Telecom Systems The NCP1032 is a miniature high-voltage monolithic switching converter with on-chip power switch and startup circuits. It incorporates in a single IC all the active power control logic and protection circuitry required to implement, with minimal external components several switching regulator applications, such as a secondary side bias supply or a low power DC-DC converter. This converter is ideally suited for 24 V and 48 V telecom and medical isolated power supply applications. The NCP1032 can be configured in any single-ended topology such as forward or flyback converter. The NCP1032 is targeted for applications requiring up to 3 W. The internal error amplifier allows the NCP1032 to be easily configured for secondary or primary side regulation operation in isolated and non-isolated configurations. The fixed frequency oscillator is optimized for operation up to 1 MHz and is capable of external frequency synchronization, providing additional design flexibility. In addition, the NCP1032 incorporates undervoltage and overvoltage line detectors, programmable cycle-by-cycle current limit, internal soft-start, and thermal shutdown to protect the controller under fault conditions. Features On Chip High 200 V Power Switch Circuit and Startup Circuit Internal Startup Regulator with Auxiliary Winding Override Programmable Oscillator Frequency Operation up to 1 MHz External Frequency Synchronization Capability Frequency Fold-down Under Fault Conditions Trimmed ± 2% Internal Reference Programmable Cycle-by-Cycle Current Limit Internal Soft-Start Active Leading Edge Blanking Circuit Line Under and Over Voltage Protection Over Temperature Protection These are Pb-Free Devices Typical Applications POE (Power Over Ethernet)/PD. Refer to Application Note AND8247 Secondary Side Bias Supply for Isolated DC-DC Converters Stand Alone Low Power DC-DC Converter Low Power Bias Supply Low Power Boost Converter Medical Isolated Power Supplies Bias Supply for Telecom Systems. Refer to App Note AND8119/D www. onsemi.com MARKING DIAGRAMS 1032 = Specific Device Marking x = A or B A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package PIN CONNECTIONS (Note: Microdot may be in either location) See detailed ordering and shipping information in the package dimensions section on page 20 of this data sheet. ORDERING INFORMATION WDFN8 MN SUFFIX CASE 511BH 1032x ALYW G G WDFN8 (Top View) GND GND C T V FB COMP V CC V DRAIN CL UV/OV 1
Transcript
Page 1: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

© Semiconductor Components Industries, LLC, 2014

October, 2016 − Rev. 31 Publication Order Number:

NCP1032/D

NCP1032

Low Power PWM Controllerwith On-Chip Power Switchand Startup Circuits forTelecom Systems

The NCP1032 is a miniature high−voltage monolithic switchingconverter with on−chip power switch and startup circuits. Itincorporates in a single IC all the active power control logic andprotection circuitry required to implement, with minimal externalcomponents several switching regulator applications, such as asecondary side bias supply or a low power DC−DC converter. Thisconverter is ideally suited for 24 V and 48 V telecom and medicalisolated power supply applications. The NCP1032 can be configuredin any single−ended topology such as forward or flyback converter.The NCP1032 is targeted for applications requiring up to 3 W.

The internal error amplifier allows the NCP1032 to be easilyconfigured for secondary or primary side regulation operation inisolated and non−isolated configurations. The fixed frequencyoscillator is optimized for operation up to 1 MHz and is capable ofexternal frequency synchronization, providing additional designflexibility. In addition, the NCP1032 incorporates undervoltage andovervoltage line detectors, programmable cycle−by−cycle currentlimit, internal soft−start, and thermal shutdown to protect thecontroller under fault conditions.

Features• On Chip High 200 V Power Switch Circuit and Startup Circuit

• Internal Startup Regulator with Auxiliary Winding Override

• Programmable Oscillator Frequency Operation up to 1 MHz

• External Frequency Synchronization Capability

• Frequency Fold−down Under Fault Conditions

• Trimmed ± 2% Internal Reference

• Programmable Cycle−by−Cycle Current Limit

• Internal Soft−Start

• Active Leading Edge Blanking Circuit

• Line Under and Over Voltage Protection

• Over Temperature Protection

• These are Pb−Free Devices

Typical Applications• POE (Power Over Ethernet)/PD. Refer to Application Note AND8247

• Secondary Side Bias Supply for Isolated DC−DC Converters

• Stand Alone Low Power DC−DC Converter

• Low Power Bias Supply

• Low Power Boost Converter

• Medical Isolated Power Supplies

• Bias Supply for Telecom Systems. Refer to App Note AND8119/D

www.onsemi.com

MARKINGDIAGRAMS

1032 = Specific Device Markingx = A or BA = Assembly LocationL = Wafer LotY = YearW = Work Week� = Pb−Free Package

PIN CONNECTIONS

(Note: Microdot may be in either location)

See detailed ordering and shipping information in the packagedimensions section on page 20 of this data sheet.

ORDERING INFORMATION

WDFN8MN SUFFIX

CASE 511BH

1032xALYW �

ÇÇÇÇÇÇÇÇ

ÇÇÇÇ

WDFN8 (Top View)

GND

GND

CT

VFB

COMP

VCC

VDRAIN

CL

UV/OV

1

Page 2: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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Figure 1. Typical Application – Dual Output Auxiliary Regulated Isolated Flyback

D1

D2

COUT

CVCC

Cin

R3

R4 RCL

CCT

CC RC

CP R1

R2

NCP 1032

VD

RA

IN VCC

CL

COMP

VFBG

ND

CT

UV/OV

VIN VOUT

2.2 �F 22 �F

2.2 �F

Figure 2. NCP1032 Simplified Block Diagram

I1

3.0 V/3.5 V

S R

PWMCOMP

NCL

NSS

30 ns One Shot

−+

2.5 V

ErrorAmplifier

−+

−+

5.7 V

−+

−+

UVComp

OVComp

2.24 V

I2

Duty

LEB

ISET

FB

COMP

OV/UV

7.6 V

10.2 V

FaultLogic

NUVLO

NLOWVCC

HIVCC

NUVLO

NLOWVCC

HIVCC

IN1

IN2IN3IN4

UVBAR

UVBAR

NUV OUT2

NUV

NOV

NOVIN5

IN6nstart

Fault

Fault

Fault

LEBOUT

LEBOUT

CurrentLimitSS

IN7Thermal Trip

12.5 mA

PGND VDRAIN

OUT3

Driver

RT

UVBAR

Internal Bias

nstartVCC

Internal Bias

Internal Bias

(all pins except VDRAIN pin are protected by 10 V ESD diodes)

Cycle= 75%

Delay

2 k�

2 k�

1.0 V

2 k�

2 k�

2 k�

3.5 V

150 k�

2 k�

6.6 V

Q SETCLRQ

Page 3: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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Table 1. FUNCTIONAL PIN DESCRIPTION

Pin Name Function Description

1 GND IC Ground Ground reference pin for the circuit.

2 CT Oscillator FrequencySelection

An external capacitor connected to this pin sets the oscillator frequency up to 1 MHz. Theoscillator can be synchronized to a higher frequency by charging or discharging CT to trip theinternal 3.0 V/3.5 V comparators. If a fault condition exists, the power switch is disabled andthe frequency is reduced.

3 VFB Feedback Signal Input The regulated voltage is scaled down to 2.5 V by means of a resistor divider. Regulation isachieved by comparing the scaled voltage to an internal 2.5 V reference.

4 COMP Error AmplifierCompensation

The output of the internal error amplifier. External compensation network between COMPand VFB pin is required for stable operation.

5 CL Current Limit ThresholdSelection

A resistor RCL connected between this pin and ground sets the peak current value of thecurrent limit. If the CL pin is left open, the current limit value is set to its initial maximum valueof approximately 12 mA (CLIM_MAX). Programmable current limit threshold, together withinternal soft−start feature effectively limits the primary transformer high current peaks duringstartup phase.

6 UV/OV Input Line Undervoltageand Overvoltage

Shutdown

Input line voltage is scaled down using an external resistor divider. The minimum operatingVin voltage is achieved when the voltage on UV/OV pin reaches UV threshold 1.0 V. Themaximum operating voltage is then limited by 2.4 V on UV/OV pin. A device version withoutOV protection feature is available, see ordering information section.

7 VCC Powers the InternalCircuitry

Supplies power to the internal control circuitry. Connect an external capacitor for energystorage during startup. The Vcc voltage should not exceed 16 V during operation.

8 VDRAIN Drain Connection Connects the power switch and startup circuit to the primary transformer windings.

EP EP Thermal Flag This is the thermal flag for the IC and should be soldered to the ground plane.

Table 2. MAXIMUM RATINGS

Rating Symbol Value Unit

Power Switch and Startup Circuits Voltage BVdss −0.3 to +200 V

VCC Power Supply Voltage VCC −0.3 to +16 V

Power Supply Voltage on all Pins, except VDRAIN and VCC VIO −0.3 to +10 V

Drain Current Peak During Transformer Saturation IDS(pk) 1.0 A

Thermal Resistance Junction−to−Air –W DFN8 3x3, case 511BH(100 sq mm, 2oz) (Note 4)(500 sq mm, 2oz) (Note 4)(100 sq mm,2oz,) (Note 5)

R�JA1096444

°C/W

Maximum Junction Temperature TJMAX 150 °C

Storage Temperature Range TSTG −60 to +150 °C

ESD Capability, Human Body Model Pins 1−7 (Note 1) 4.0 kV

ESD Capability, Machine Model Pins 1−7 (Note 1) 400 V

Pin 8 is connected to the high voltage startup and power switch which is protected tothe maximum drain voltage

200 V

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionalityshould not be assumed, damage may occur and reliability may be affected.1. This device series contains ESD protection and passes the following tests:

Human Body Model (HBM) ± 2.0 kV per JEDEC standard: JESD22−A114.Machine Model (MM) ± 200 V per JEDEC standard: JESD22−A115.

2. This device contains latch−up protection and it exceeds ± 100 mA per JEDEC standard: JESD78 class II3. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J−STD−020A4. EIA JEDEC 51.3, single layer PCB with added heat spreader5. EIA JEDEC 51.7, four layer PCB with added heat spreader

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Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VDRAIN = 48 V, VCC = 12 V, unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit

SUPPLY SECTION AND VCC MANAGEMENT

VCC_ON Vcc Voltage at Which the SwitcherStarts Operation

VCC Increasing 9.9 10.2 10.5 V

VCC_MIN Minimum Operating VCC After Turn onat Which HV Current Source Restarts

VCC Decreasing 7.40 7.55 7.7 V

VCC_RST Vcc Undervoltage Lockout Voltage VCC Decreasing, VFB = VCOMP 6.75 6.95 7.15 V

ICC1 Internal IC Consumption Power Switch Enabled

MOSFET is switching at 300 kHz 2.0 2.9 4.0 mA

ICC2 Internal IC ConsumptionPower Switch Disabled

No Fault condition, VFB = 2.7 V − 2.0 2.5 mA

ICC3 Internal IC ConsumptionPower Switch Disabled

Fault condition,VFB = 2.7 V, VUV/OV < 1.0 V

− 0.75 1.5 mA

POWER SWITCH CIRCUIT

RDSON Power Switch Circuit On−StateResistance

ID = 100 mATJ = 25°CTJ = 125°C

−−

4.24.9

5.18.0

BVdss Power Switch Circuit and StartupBreakdown Voltage

IDS_OFF = 100 �A, VUV_OV < 1.0 VTj = 25°C

200 − − V

IDS_OFF Power Switch Circuit and StartupCircuit Off−State Leakage Current

VDRAIN = 200 V, VUV_OV < 1.0 VTJ = 25°CTJ = −40°C to 125°C

−−

2020

2530

�A

tR Switching Characteristics − Rise Time VDS = 48 V, RL = 480 �, Time(10%−90%)

− 7 − ns

tf Switching Characteristics − Fall Time VDS = 48 V, RL = 480 �, Time(90%−10%)

− 10 − ns

INTERNAL STARTUP CURRENT SOURCE

ISTART1 HV Current Source Vcc = 0 V,Tj = 25°CTj = −40°C to 125°C

10.09.0

12.0−

14.015.0

mA

ISTART2 HV Current Source Vcc = VCC_ON − 0.2 VTj = 25°CTj = −40°C to 125°C

9.08.0

11.0−

13.016.0

mA

Vstart_min Minimum Startup Voltage ISTART2 = 0.5 mA, Vcc = VCC_ON − 0.2 V, Tj = 25°C − 16.3 −

V

ERROR AMPLIFIER

VREF Reference Voltage VCOMP = VFB, Follower ModeTJ = 25°CTJ = −40°C to 125°C

2.452.40

2.52.5

2.552.60

V

REGLINE Line Regulation VCC = 8 V to 16 V, TJ = 25°C − 1.0 3.0 mV

IVFB Input Bias Current VFB = 2.3 V − 70 150 nA

ISRC COMP Source Current VFB = 2.3 V 80 95 125 �A

ISNK COMP Sink Current VFB = 2.7 V 500 700 900 �A

VC_MAX COMP Maximum Voltage ISRC = 0 �A, VFB = 2.3 V 3.95 4.17 4.5 V

VC_MIN COMP Minimum Voltage ISNK = 0 �A, VFB = 2.7 V − 91 200 mV

AVOL Open Loop Voltage Gain (Note 6) − 80 − dB

GBW Gain Bandwidth Product (Note 6) − 1.0 − MHz

Page 5: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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Table 3. ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = −40°C to +125°C, VDRAIN = 48 V, VCC = 12 V, unless otherwise noted)

Symbol UnitMaxTypMinConditionsParameter

CURRENT LIMIT AND PWM COMPARATOR

CLIM_MAX Max Current Limit Threshold CL pin Floating, TJ = 25°C,(di/dt = 0.5 A/�s) 420 512 600

mA

CLIM_MIN Min Current Limit Threshold RCL = 20 k�, TJ = 25°C, (di/dt = 0.1 A/�s) − 57 −

mA

TPLH Propagation Delay from Current Limit Detection to theDrain OFF State (Note 6)

− 100 − ns

TON_MIN Min On Time Pulse Width FSW = 300 kHz (Note 6) − 240 − ns

Tss Soft−Start Duration (Note 6) − 2.0 − ms

LINE UNDER/OVERVOLTAGE PROTECTIONS

Vuv Undervoltage Lockout Threshold VFB = VCOMP, Vin decreasing 0.95 1.067 1.18 V

VUV_hys Undervoltage Lockout Hysteresis − 70 − mV

Iuv Input Bias Current VFB = 2.3 V − 0 1 �A

VOV Overvoltage Lockout Threshold VFB = VCOMP, Vin increasing (Note 7) 2.3 2.41 2.5 V

Vov_hys Overvoltage Lockout Hysteresis − 158 − mV

TEMPERATURE MANAGEMENT

TSD Thermal Shutdown (Note 6) 165 °C

Hysteresis in Shutdown (Note 6) 20 °C

INTERNAL OSCILLATOR

fOSC1 Oscillation Frequency, 300 kHz CT = 560 pF (Note 8)TJ = 25°CTJ = −40°C to 125°C

275270

300−

325335

kHz

fOSC2 Oscillation Frequency, 960 kHz CT = 100 pF, TJ = 25°C − 960 − kHz

ICT_C Timing Charge Current VCT = 3.25 V − 172 − �A

ICT_D Timing Discharge Current VCT = 3.25 V 517 �A

VR_pk Oscillator Ramp Peak Voltage − 3.492 − V

VR_VLY Oscillator Ramp Valley − 2.992 − V

DCMAx Maximum Duty Cycle 70 76.5 80 %

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.6. Guaranteed by design and characterized7. The OV/UV option is disabled on the NCP1032B version8. Oscillator frequency can be externally synchronized to the maximum frequency of the device

Page 6: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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TYPICAL OPERATING CHARACTERISTICS – Dual Output Isolated Flyback Converter

Figure 3. Efficiency vs. IOUT at VIN = 24, 36, 48and 72 V, T1 = CoilCraft B0226−EL

Figure 4. VCC Pin Load Regulation at VIN = 24,36, 48 and 72 V

IOUT (mA) IOUT (mA)

20017515010075502500

10

20

30

50

60

70

80

200175150100755025012.060

12.065

12.070

12.075

12.080

12.090

12.095

12.100

Figure 5. Startup Sequence, RCL Open, OutputLoad = 80 � (IOUT = 150 mA), 1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC, 3 VIN 10.0 V/

div DC, 4 IPRI 100 mA/div DC, T = 20 ms/div

Figure 6. Soft−Start, RCL open, Output NoLoad 1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC,

3 VIN 10.0 V/div DC, 4 IPRI 100 mA/div DC,T = 500 �s/div

Figure 7. Soft−Start, RCL = 32 k� (CLIM =250 mA), Output Load = 240 � (IOUT = 50 mA),1 VCC 3.0 V/div DC, 2 VOUT 3.0 V/div DC, 3 VIN

10.0 V/div DC, 4 IPRI 100 mA/div DC,T = 1.0 ms/div

Figure 8. Discontinuous Conduction Mode(DCM), IOUT = 150 mA, 2 VDRAIN 20 V/div DC, 3 ISEC 30 mA/div DC, 4 IPRI 100 mA/div, DC,

T = 500 ns/div

EF

FIC

IEN

CY

(%

)

VO

UT (

V)

125 225

40

36 V48 V

72 V

24 V

18 V

125 225

12.085

36 V

48 V 72 V24 V

18 V

Page 7: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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TYPICAL OPERATING CHARACTERISTICS

Figure 9. Frequency vs. Timing Capacitor CTat 25�C

Figure 10. Oscillator Frequency vs. JunctionTemperature

CAPACITANCE (pF) AMBIENT TEMPERATURE (°C)

24802000152010405608050

100

200

400

800

1600

100806040200−20−40300

400

500

600

800

900

1000

1100

Figure 11. Maximum Duty Ratio vs.Temperature

Figure 12. Maximum Duty Ratio vs. VCCVoltage

AMBIENT TEMPERATURE (°C) VCC (V)

100806040200−20−4074.0

74.2

74.6

74.8

75.0

75.4

75.8

76.0

1514131211109874.0

74.3

74.6

74.9

75.2

75.5

Figure 13. Minimum On Time vs. VCC Figure 14. Power Switch Circuit and StartupCircuit Leakage Current vs. Drain Voltage

VCC (V) DRAIN VOLTAGE (V)

15141312111098100

120

160

180

220

240

280

300

240200160120804000

4

8

12

16

20

2830

FR

EQ

UE

NC

Y (

kHz)

SW

ITC

HIN

G F

RE

QU

EN

CY

(kH

z)

DU

TY

CY

CLE

(%

)

DU

TY

CY

CLE

(%

)

MIN

ON

TIM

E (

ns)

I DS

(off)

, PO

WE

R S

WIT

CH

AN

D S

TAR

TU

PC

IRC

UIT

S L

EA

KA

GE

CU

RR

EN

T (�A

)

120

700

CT = 82 pF

CT = 220 pF

CT = 560 pF

120

74.4

75.2

75.6 1.04 MHz597 kHz320 kHz

128 kHz

16

VDRAIN = 100 V

VDRAIN = 48 V

VDRAIN = 15 V

16

140

200

260

VDRAIN = 100 V

VDRAIN = 48 V

VDRAIN = 15 V24

6

10

14

18

22

26

2

125°C

25°C

−40°C

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NCP1032

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TYPICAL OPERATING CHARACTERISTICS

Figure 15. Power Switch RDSON vs. JunctionTemperature

Figure 16. Vdrain Startup Threshold overTemperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

100806040200−20−402.93.1

3.5

3.9

4.3

4.7

5.1

5.5

100806040200−20−4016.10

16.14

16.18

16.22

Figure 17. Startup Current vs. JunctionTemperature

Figure 18. Undervoltage Lockout Thresholdvs. Junction Temperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

100806040200−20−4010.210.4

10.8

11.2

11.611.8

12.4

12.8

100806040200−20−406.930

6.935

6.940

6.945

6.950

6.955

6.960

6.965

Figure 19. Supply Voltage Thresholds vs.Junction Temperature

Figure 20. VCC Input Current at 12 V with an18 V applied Drain voltage 25�C VS Oscillator

Frequency

TJ, JUNCTION TEMPERATURE (°C) FREQUENCY (kHz)

100806040200−20−407.257.50

8.00

8.50

9.00

9.50

10.00

10.50

8007006005004003002001002.002.25

3.003.25

3.75

4.25

4.75

5.25

RD

S(o

n), P

OW

ER

SW

ITC

H O

NR

ES

ISTA

NC

E (�

)

VC

C(r

eset

), U

ND

ER

VO

LTA

GE

LOC

KO

UT

TH

RE

SH

OLD

(V

)

I STA

RT,

STA

RT

UP

CU

RR

EN

T (

mA

)

VC

C(r

eset

), U

ND

ER

VO

LTA

GE

LOC

KO

UT

TH

RE

SH

OLD

(V

)

UV

TH

RE

SH

OLD

(V

)

INP

UT

CU

RR

EN

T (

mA

)

120

3.3

3.7

4.1

4.5

4.9

5.3

VCC = 16 V

VCC = 12 V

VCC = 8 V

16.12

16.16

16.20

16.24

16.30

16.34

16.38

16.28

16.32

16.36

16.40

16.26

120

120

10.6

11.0

11.4

12.012.2

12.6

VCC = VCC(on) − 0.2 V

VCC = 0 V

120

120

7.75

8.25

8.75

9.25

9.75

10.25Startup Threshold

Minimum Operating Threshold

900 1000

2.502.75

3.50

4.00

4.50

5.00

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TYPICAL OPERATING CHARACTERISTICS

Figure 21. Operating Supply Current vs.Supply Voltage at 320 kHz

Figure 22. VCC Input Current vs. Temperatureover Frequency span VDrain = 48 V

VCC, SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (°C)

151413121110982.12.3

2.7

2.9

3.1

3.5

3.7

4.1

100806040200−20−402.0

2.5

3.5

4.0

4.5

5.5

6.0

6.5

Figure 23. COMP Clamp Voltage vs. JunctionTemperature

Figure 24. Reference Voltage vs. JunctionTemperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

100806040200−20−404.114.12

4.14

4.16

4.18

4.20

4.21

4.23

100806040200−20−402.488

2.490

2.491

2.493

2.495

2.496

2.498

2.500

Figure 25. COMP Source Current vs. JunctionTemperature

Figure 26. COMP Sink Current vs. JunctionTemperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

100806040200−20−4094.00

94.25

94.75

95.00

95.25

95.75

96.00

96.50

100806040200−20−40620

640

680

700

720

740

780

800

I CC

1, O

PE

RA

TIN

G S

UP

PLY

CU

RR

EN

T (

mA

)

INP

UT

CU

RR

EN

T (

mA

)

Vc

CLA

MP

(V

)

RE

FE

RE

NC

E V

OLT

AG

E (

V)

SO

UR

CE

CU

RR

EN

T (�A

)

SIN

K C

UR

RE

NT

(�A

)

16

2.5

3.3

3.9 VDRAIN = 48 VTJ = 25°CCT = 560 pF

120

3.0

5.0

1.04 MHz

597 kHz

320 kHz

128 kHz

2.489

2.492

2.494

2.497

2.499

120

VCC = 16 V

VCC = 12 VVCC = 8 V

120

94.50

95.50

96.25 VCC = 16 V

VCC = 12 V

VCC = 8 V

120

660

760

120

4.13

4.15

4.17

4.19

4.22

Page 10: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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TYPICAL OPERATING CHARACTERISTICS

Figure 27. Undervoltage Threshold vs.Junction Temperature

Figure 28. Overvoltage Threshold vs. JunctionTemperature

TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

100806040200−20−401.0601.061

1.063

1.065

1.067

1.069

1.070

1.072

100806040200−20−402.394

Figure 29. Under/Overvoltage Hysteresis vs.Junction Temperature

Figure 30. Current Limit Threshold vs. RCL,Current Slew Rate = 0.5 A/�s

TJ, JUNCTION TEMPERATURE (°C) RISET (k�)

100806040200−20−4060

80

90

110

130

150

160

180

1801401201008060402050

100

150

200

250

350

400

450

Figure 31. Current Limit Threshold vs. CurrentSlew Rate

Figure 32. Current Limit Threshold vs. TJ,Current Slew RISET = Open = 0.5 A/�s, RISET= 55 k� = 0.3 A/�s, RISET = 22 k� = 0.1 A/�s

CURRENT SLEW RATE (mA/�S) TJ, JUNCTION TEMPERATURE (°C)

10008007004003002001000270

280

290

300

310

320

330

340

100806040200−20−4050

100

200

250

300

400

500

550

UV

TH

RE

SH

OLD

(V

)

OV

TH

RE

SH

OLD

(V

)

VU

V/O

V(h

ys),

HY

ST

ER

ES

IS (

mV

)

I LIM

, CU

RR

EN

T L

IMIT

TH

RE

SH

OLD

(m

A)

I LIM

, CU

RR

EN

T L

IMIT

TH

RE

SH

OLD

(m

A)

VCC = 16 V

VCC = 12 V

VCC = 8 V

120

1.062

1.064

1.066

1.068

1.071 VCC = 16 V

VCC = 12 V

VCC = 8 V

120

2.3962.3982.4002.4022.4042.4062.4082.4102.4122.4142.4162.4182.4202.422

70

100

120

140

170

120

OV Hysteresis

UV Hysteresis

160 200

300

600500 900

25 V 72 V

120 �H

I LIM

, CU

RR

EN

T L

IMIT

TH

RE

SH

OLD

(m

A)

120

150

350

450RISET = OPEN

RISET = 50 k�

RISET = 22 k�

Page 11: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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CT Ramp

CT ChargeSignal

PWMComparator

Output

Power SwitchCircuit Gate Drive

PWM LatchOutput

Leading EdgeBlanking Output

Current LimitPropagation

Current LimitThreshold

Output OverloadNormal PWM Operating Range

Figure 33. Pulse Width Modulation Timing Diagram

Delay

Output OverloadNormal OperationStartupMode

DynamicSelf Supply

VCC(on)

VCC(off)VCC(reset)

0 VISTART

0 mA

0 V

3.0 V

2.5 V

0 V

0 V

Figure 34. Auxiliary Winding Operation with Output Overload Timing Diagram

VDRAIN

VFB

VUV

Page 12: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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IntroductionThe NCP1032 is a monolithic voltage−mode switching

regulator designed for isolated and non−isolated bias supplyapplications. The internal startup circuit and the MOSFETare rated at 200 V, making them ideal for 24 V through 48 Vtelecom and 42 V automotive applications. In addition, theNCP1032 can operate from an existing 12 V supply. Theregulator is optimized for operation up to 1 MHz.

The NCP1032 device incorporates all of the active power,control logic, protection circuitry, and power switch in asingle IC. The compact design allows the designer to useminimal external components on several switchingregulator applications, such as a secondary side bias supplyor a low power DC−DC converter.

The NCP1032 is available in the space saving WDFN83 x 3 mm package and is targeted for applications requiringup to 3 W.

The NCP1032 has an extensive set of features includingprogrammable cycle−by−cycle current limit, internalsoft−start, input line under and over voltage detectioncomparators with hysteresis, regulator output undervoltagelockout with hysteresis and over temperature protectionproviding protection during fault conditions. A descriptionof each of the functional blocks is given below and thefunctional block diagram is shown in Figure 2.

Startup Supply Circuit and Undervoltage LockoutThe NCP1032 contains an internal 200 V startup regulator

that eliminates the need for external startup components.The startup regulator consists of a 12 mA (typical) currentsource that supplies power from the input line (VDRAIN)pin to charge the capacitor on the VCC pin (CVCC). The actof charging the CVCC capacitor until it reaches 10.2 V whileholding the power switch off is called Startup Mode (SM).Once the current source charges the VCC voltage to 10.2 V(typical) the startup circuit is disabled and if no faults arepresent, the power switch circuit is enabled. The internalcontrol circuitry will draw its current from the energy heldby the CVCC capacitor. The startup regulator turns on againonce VCC reaches 7.55 V. The charging of the CVCCcapacitor to 10.2 V by the current source and the dischargingby the control circuitry to 7.55 V will be henceforth referredto as Dynamic Self Supply (DSS).

If VCC falls below 7.55 V while switching, the deviceenters a Restart Mode (RM). While in the RM the CVCCcapacitor is allowed to discharge to 6.95 V while the powerswitch is enabled. Once the 6.95 V threshold is reached, thepower switch circuit is disabled, and the startup regulator isenabled to charge the CVCC capacitor. The power switch isenabled again once the VCC voltage reaches 10.2 V.Therefore, the external CVCC capacitor must be sized suchthat a voltage greater than 6.95 V is maintained on the VCCpin while the converter output reaches regulation. Theoutput is delayed 0.4 ms (TSS_Delay) from the releasedundervoltage lockout to the first switching pulse. Thesoft−start time TSS is fixed at 2 ms to ramp the current from

its minimum value to its maximum value. The soft−starttime is load and RCL dependent and can be computed in thesoft−start section. The designer must evaluate the currentdraw of the regulator at the desired switching frequency overthe VCC and temperature operating range shown in Figures20 − 22. CVCC is calculated using the following equation:

CVCC �ICC � �TSS_Delay � TSS

�VCC_ON � VCC_MIN

2.95 �F �4.0 mA � �0.4 ms � 2.0 ms�

10.2 V � 6.95 V

(eq. 1)

ICC includes the NCP1032 bias current (ICC1_MAX) andany additional current used to bias the feedback (if used).Assuming an ICC1_MAX of 3.5 mA plus a 0.5 mA biascurrent for the feedback sensing resistors (if used), and Tssof 2 ms, CVCC is calculated at 2.95 �F and should be roundedup to ensure design margin to 3.3 �F. Please note that if thefeedback sensing resistors are connected to the VCC pin(isolated main output topology) and CVCC is increased tomatch COUT, the transient response of the converter willsuffer. The poor transient response is due to the imbalancedcapacitance to current ratio. The auxiliary winding has asignificantly greater capacitance to current ratio than theoutput winding, taking it longer for CVCC to follow COUTduring a transient condition.

After initial startup, the VCC pin should be biased aboveVCC_min using an auxiliary winding. This will prevent thestartup regulator from turning on during normal operation,reducing device power dissipation. A load should not bedirectly connected to the VCC pin. A load greater than12 mA will override the startup circuit possibly damagingthe part. The maximum voltage rating of the startup circuitis 200 V. Power dissipation should be observed to avoidexceeding the maximum power dissipation of the package.Figure 35 shows the recommended configuration for anon−isolated flyback converter.

Figure 35. Non−Isolated Bias SupplyConfiguration

D1

D2

COUT

CVCC

Cin

R3

R4RCL

CCT

CC RC

CPR1

R2

VD

RA

IN VCCCL

COMP

VFBGN

D

CT

UV/OV

VIN VOUTT1

Lsec

Lbias

Lpri

NCP1032

Page 13: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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Soft−StartThe NCP1032 features an internal soft−start which

reduces power−on stress and also contributes to the loweroutput overshoot. Once the VCC_ON threshold is reachedand there are no fault conditions, the power switch is enabledand the cycle−by−cycle current limit is ramped up slowly tothe current limit threshold set by the CL pin. If the CL pinis open, the current limit will be set to its maximum value

and the soft−start time will be 2 ms as shown in Figure 36.The equation below can be used to calculate the soft−starttime for all other current limit set values.

TSSR �SetCurrent � MinCurrentMaxCurrent � MinCurrent

� TSS �

1.07 ms �300 mA � 57 mA

512 mA � 57 mA� 2 ms

(eq. 2)

COMP Voltage

4.2 V3.5

3.0 V

PWM Signal

Ramp

Inductor Current

Current Limit

57 mA

Set Limit

Soft−Start Time CorrectionTime

Figure 36. Soft−Start Time

The compensation of the converter must be manipulatedto minimize the overshoot of the output voltage duringstartup, details are in the compensation section.

Line Under and Over Voltage DetectorsThe NCP1032 incorporates Vin input line under voltage

(UV) and over voltage (OV) shutdown circuits. If theUV/OV pin is set below 1.0 V or above 2.4 V thresholds thepower switch will stop switching and the part will use DSSuntil the problem is corrected. The comparators incorporatetypical voltage hysteresis of 70 mV (UV) and 158 mV (OV)to prevent noise from inadvertently triggering the shutdowncircuit. The UV/OV sense pin can be biased using anexternal resistor divider from the input line as shown inFigure 37. The UV/OV pin should be bypassed using a 1 nFcapacitor to prevent triggering the UV/OV circuit duringnormal switching operation.

R3

VIN

1 nFR4 1 V

2.4 V

OVComparator

UVComparator

Fault

OV Enable

Figure 37. UV/OV Resistor Dividerfrom the Input Line

CUV

Logic

The resistive network impedance must not be too high tokeep good voltage accuracy and not too low to minimizepower losses. A 200 k� to 1.2 M� range is recommendedfor the high side resistor R3. If the designer wanted to set theundervoltage threshold to 32 V, the resistor divider should bedesigned according to the following equation:

R4 �VUV � R3

VIN_UV � VUV�

34.49 k� �1.067 � 1 M�

32 V � 1.067 34.0 k� (R96 Value)

(eq. 3)

Page 14: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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The OV threshold monitored at the UV/OV pin is 2.41times higher than the UV threshold, leading to an OVthreshold of 73.3 V for the calculated R96 value. Designerscan quickly set the OV/UV thresholds by referencingFigure 38.

Figure 38. UV/OV Resistor Divider Thresholdswith R4 Set to 10 k

R3 (k�)

450400 5003503002502001501020

40

50

70

90

100

120

INP

UT

VO

LTA

GE

(V

)

30

60

80

110

Overvoltage Threshold

Undervoltage Threshold

The UV/OV pin can also be used to implement a remoteenable/disable function. If an external transistor pulls theUV/OV pin below 1.0 V (or above 2.4 V) the converter willbe disabled and no switching is allowed. A device version isavailable without the OV protection feature, see the orderinginformation section.

Error AmplifierThe internal error amplifier (EA) regulates the output

voltage of the bias supply. The scaled signal is fed into thefeedback pin (VFB) which is the inverting input of the erroramplifier. It compares a scaled voltage signal to an internaltrimmed 2.5 V reference connected to its non−invertinginput.

The output of the error amplifier is internally connectedto a PWM comparator and also available externally throughthe COMP pin for frequency compensation. To insurenormal operation, the EA compensation should be selectedsuch that the EA frequency response crosses 0 dB below80 kHz.

The error amplifier feedback bias current is less than200 nA over the operating range. The output source and sinkcurrents are typically 95 �A and 700 �A, respectively.

Under load transient conditions, COMP may need tomove from the bottom to the top of the CT ramp. A largecurrent is required to complete the COMP swing if smallresistors or large capacitors are used to implement thecompensation network. In which case, the COMP swing willbe limited by the EA source current. Optimum transientresponses are obtained if the compensation componentsallow the COMP pin to swing across its operating range in1 cycle.

Oscillator, Voltage Feed Forward, and Sync CapabilityThe oscillator is optimized for operation up to 1 MHz and

its frequency is set by the external timing capacitor (CT)connected to the CT pin. The oscillator has two modes ofoperation: free running and synchronized (sync). While infree running mode, an internal current source sequentiallycharges and discharges CT generating a voltage rampbetween 3.0 V and 3.5 V. Under normal operatingconditions, the charge (ICT_C) and discharge (ICT_D)currents are typically 172 �A and 515 �A, respectively. Thecharge/discharge current ratio of 1:3 discharges CT in 25%of the total period. The power switch is disabled while CT isdischarging, guaranteeing a maximum duty cycle of 75% asshown in Figure 39.

25%

75%Signal

Power SwitchEnabled

COMP

Max DutyCycle

Figure 39. Auxiliary Winding Operation withOutput Overload Timing Diagram

CT Ramp

CT Charge

The oscillator frequency should be set no more than 25%below the target sync frequency to maintain an adequatevoltage ramp and provide good noise immunity. A possiblecircuit to synchronize the oscillator is shown in Figure 40.

C1R1 R2

2

Figure 40. External FrequencySynchronization Circuit

CT

CT

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NCP1032

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Voltage feed forward can be implemented by connectinga resistor from the input voltage to the CT pin. RFF suppliesa current that allows the input voltage to modify themaximum duty cycle rather than the standard 75%maximum. If the designer wanted to implement a fixedlower duty cycle, a resistor can be tied to a fixed voltagesource such as VAUX or a voltage reference. If voltage feedforward is used, the frequency can shift dramaticallydepending on the value of the resistor.

Cin

RFF

CCT

NCP1032VD

RA

IN

GN

D

CT

VIN

Z14 V

IFF2.2 �F

OffOn

TimeOff

TimeOn

Time66%

OffOn

Time75% 58% 53%

OffTime

OnTime

42%

OffTime

OnTime

38%

Off Time

OnTime

29%

OffTime

On

21%

OffTime

On

Feed Forward Voltage

CT PIN Voltage

Figure 41. Voltage Feed Forward

RVFF �VINMIN � Ramp

ICT_D � DMAX � �ICT_C � ICT_D��

320 k� �32 V � 3.25 V

517 �A � 62% � �172 �A � 517 �A�

(eq. 4)

PWM Comparator and LatchThe Pulse Width Modulator (PWM) comparator

compares the error amplifier output (COMP) to the CT rampand generates a proportional duty cycle. The power switchis disabled while COMP voltage is below the CT rampsignal. Once COMP reaches the ramp signal, the powerswitch is enabled. If COMP is at the bottom of the CT ramp,the converter operates at minimum duty cycle. While COMPincreases, the duty cycle increases until COMP reaches thepeak of the CT ramp, at which point the controller operatesat maximum duty cycle.

The CT charge signal is filtered through a one shot pulsegenerator to set the PWM latch and enable switching at thebeginning of each period. Switching is allowed while the CTramp is below COMP and a current limit fault is not present.

The pulse width modulation technique is seen inFigure 39.

The PWM comparator and latch propagation delay areless than 200 ns. If the system is designed to operate with aminimum on time less than 200 ns (no or light load), theconverter will skip pulses. Skipping pulses is usually not aproblem, unless operating at a frequency close to the audiblerange. Skipping pulses is more likely when operating at highfrequencies during high input voltage and minimum loadconditions.

A 2 k� series resistor is included for ESD protectionbetween the internal EA output and the COMP pin. Undernormal operation, a 220 mV offset is observed between theCT ramp and the COMP crossing points. The series resistordoes not interact with the error amplifier transfer function.

Programmable Current LimitThe power switch circuit incorporates SENSEFET®

technology to monitor the drain current. A sense voltage isgenerated by driving a sense element, RSENSE, with a currentproportional to the drain current. The sense voltage iscompared to an externally programmable reference voltageon the non−inverting input of the current limit comparator.If the sense voltage exceeds the setup reference level, thecomparator resets the PWM latch and the switching cycle isterminated. The reference level threshold is programmableby a resistor (RCL) connected to the CL pin shown inFigure 42.

By limiting the peak current to the needs of theapplication, the transformer sizing can be scaledappropriately to the specific requirements which allows thePCB footprint to be minimized. The NCP1032 maximumdrain current limit thresholds are 512 mA.

Please refer to Figure 30 for ILIM vs. RCL relationship.

Current LimitComparator

Fault Logic

SenseMOSFET

DRIVER

Leading EdgeBlanking GND

VDRAIN

100 ns

RCL

Soft−Start Ramp++

CL

Figure 42. Current Limit Threshold andPropagation Delay

3.2 �A

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NCP1032

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The propagation delay is measured from the time anovercurrent fault appears at power switch circuit drain, to thestart of the turn−off transition as shown in Figure 43. Thecurrent limit propagation delay time is typ. 100 ns. Thepropagation must be accounted for when designing thepower supply, as it will result in a constant power outputthrough the transformer when the output is shorted. Theconstant power can cause the transformer to rise intemperature permanently damaging the magnetics. This canbe mitigated by placing a 10 � resistor in series with theoutput rectification diode.

t

Figure 43. Current Limit Threshold andPropagation Delay

ISW

ILIM

TPHL

VINLP

� TPHL

Adaptive Leading Edge BlankingEach time the power switch circuit is turned on, a narrow

voltage spike appears across RSENSE. The spike is due to thepower switch circuit gate to source capacitance, transformerinterwinding capacitance, and output rectifier recoverytime. The spike can cause a premature reset of the PWMlatch. A proprietary active Leading Edge Blanking (LEB)circuit masks the current signal to prevent the voltage spikefrom resetting the PWM latch. The active LEB masks thecurrent signal until the power switch turn on transition iscomplete. The adaptive LEB period provides better currentlimit control compared to a fixed blanking period.

Power Switch Circuit ProtectionThe NCP1032 monolithically integrates a 200 V power

switch with control logic circuitry. The power switch isdesigned to directly drive the converter transformer. Thegate drive is tailored to control switching transitions andhelp limit electromagnetic interference (EMI).

For a Flyback topology a large transient voltage spikeappears at the transformers primary side after the powerswitch turns off. These spikes are a function of thetransformer leakage inductance (LLP) on either the primaryor secondary side. A circuit is needed to clamp the leakagespike, limiting the voltage drain excursion to a safe value.The operating VDRAIN_MAX is 200 V as depicted inFigure 44. Two such circuits are the passive RCD networkor a zener clamp as depicted in Figure 45 and Figure 46.

t

Figure 44. Power Switch Waveforms with Clamping

VIN

VCLAMPVR

VDRAIN

VLS (leakage spike)

VDRAIN_MAX (180 V)

Vin

D_Clamp

Cclamp−

+Cin D1

+

Rcl

T1

Cvcc

Cout

Rcl

amp

U?

NCP1032_33

VCC 7

VD

RA

IN8

CL 5

VFB3

COMP 4

GN

D1

UV/OV6

CT

2Figure 45. Passive RCD Clamp Network

VF

The passive RCD network is the most standard circuitryand the formula below is used to calculate RCLAMP andCCLAMP.

RCLAMP �2 � VCLAMP � �VCLAMP � (VOUT � VF) � N�

LLP � IPEAK2 � FSW

CCLAMP �VCLAMP

VLS � FSW � RCLAMP

(eq. 5)

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NCP1032

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The voltage leakage spike (VLS) is usually selected 50 to70% above the reflected value VR = N x (VOUT + VF) and(VIN + VCLAMP) must be below the operating VDRAIN−MAXwhich is 200 V. The diode used for the clamping circuitneeds to be at minimum fast or ultrafast recovery and anMURA110 represents a good choice. One major drawbackof the RCD network lies in its dependency upon the peakcurrent. The worse case occurs when IPEAK and VIN are atthe maximum.

Dz_clampVin

D_Clamp−

+Cin D1

+

Rcl

T1

Cvcc

Cout

U?

NCP1032_33

VCC7

VD

RA

IN8

CL 5

VFB3

COMP4

GN

D1

UV/OV6

CT

2

Figure 46. Zener Clamp Network

VF

The zener diode is probably the most expensive but offersthe best protection and a very precise clamping level. Selectthe zener voltage to set VLS level between 10 to 15 V abovethe reflected voltage VR so VZener = VLS + VR. The zenerdiode must be able to handle the voltage rating and powerdissipation during the switch turn−off time. For theNCP1032, a 0.5 W zener diode, like the MMSZ47T1 issuitable.

Thermal ShutdownInternal thermal shutdown circuitry is provided to protect

the integrated circuit in the event that the maximum junctiontemperature is exceeded. When activated at 165°C, thepower switch circuit is disabled. Once the junctiontemperature falls below 145°C, the NCP1032 is allowed toresume normal operation. This feature is provided to preventcatastrophic failures from accidental device overheating. Itis not intended to be used as a substitute for proper heatsinking.

Application Considerations

Typical ApplicationsA 12 V / 3 W bias supply for 36 V to 75 V telecom systems,

1500 V isolation DC−DC converters. The NCP1032 isconfigured in Flyback topology and operates inDiscontinuous Conduction Mode (DCM) to offer alow−cost, high efficiency solution. The circuit schematic isshown in Figure 47. Transformer T1 is available as aCoilCraft B0226−EL. Capacitor CCT sets the switchingfrequency at approximately 300 kHz.

Output voltage regulation and overall efficiency areshown in Figure 3 and Figure 4 on page 6. The resistordivider formed by R3 and R4 sets the undervoltage lockoutthreshold at about 32 V.

Application Note AND8119/D describes the design ofthis bias supply system.

+

2.2 �FCin

D2

NRVB0540

R25.1 K

R119.6 K

2.2 �FCvcc

D1

MBR140

22 �FCout

+

Cc100 nF

Rc18 K

Cp 68 pF

R31 M

R432.4

560 pFCct

T1

Lsec

Lpri

Lbias

U1

NCP1032

VCC 7

VD

RA

IN8

CL5

VFB3

COMP4

GN

D1

UV/OV6

CT

2

L1 2.2�H

Cclp

1 nF

MBR1H100

Dclp

Rclp18 k

1000 pFC1

1 nFCuv

Figure 47. 48 V to Isolated 12 V / 3 W Bias Supply Schematic

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NCP1032

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Layout RecommendationsTo prevent EMI problems high current copper traces

which have high frequency switching should be optimized.Therefore, use short and wide traces for power current pathsand for power ground traces especially transformer traceconnections (primary and secondary). When power istransferred from input to output, there is a period of timewhen the power switch is on, referred to as “on time,” anda period of time when the switch is off, referred to as “offtime.” When the power switch is on, the input voltage isapplied across the primary side of the transformer andcurrent increases in the primary inductance. Further, whenthe power switch is on the output current is supplied from theoutput capacitance. When the power switch is off, current onthe primary side conducts through the clamp or snubbercircuit. On the secondary side current is conducting throughthe rectification diode, providing power to the output andreplenishing energy in the output capacitances as shown inFigure 48. Electromagnetic radiation is minimized bykeeping VDRAIN leads, output diode, and output bypasscapacitor leads as short as possible. It is important tominimize the area of the VDRAIN nodes and used theground plane under the switcher circuitry to preventinterplane coupling and minimize cross−talk to sensitive

signals and ICs. The exposed pad of the package must beconnected to the ground plane of the board which isimportant for EMI and thermal management. Finally, it isalways good practice to keep sensitive traces such asfeedback connection (VFB and COMP) as far away fromswitched signal connections (VDRAIN) as possible.Figure 48 shows an example of an optimized PCB layout.

Thermal ConsiderationsCareful attention must be paid to the internal power

dissipation of the NCP1032. Power dissipation is a functionof efficiency and output power. As output powerrequirements increase, proper component selection includesadjusting RDSON, forward voltage of diodes, and enlargingpackages. For example, if a transformer’s size wereincreased to lower the DCR or/and increase the inductanceefficiency will improve at heavier loads. The exposedthermal pad is designed to be soldered to the ground planeused as a heat sink. The ground plane size should bemaximized and connected to the internal and bottom copperground planes with thermal vias placed directly under thepackage to spread heat generated by the NCP1032 asdepicted Figure 48.

Figure 48. Recommended PCB Layout

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NCP1032

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+

2.2 �FCin

R220 K

R120 K

D1

MBR140SFT1G

22 �FCout

+

Cc100 nF

Rc18 K

Cp 68 pF

R31 M

R432.4

560 pFCct

Vin 32 to 75 V

LsecLpri

U1

NCP1032

VCC

7

VD

RA

IN8

CL5

VFB3

COMP 4

GN

D1

UV/OV6

CT

2

Cclp

1 nF

MBR1H100SFT3G

Dclp

Rclp18 k

1 nFCuv

− Vout 5.0 V600 mA

D4MMSZ5243BT1G

Q1NSS1C201LT1G

R718 k

T14:1

1.0 �FCvcc

Figure 49. 48 V to 5.0 V DC−DC Converter Without Auxiliary Winding

+

2.2 �FCin

R220 K

R120 K

D1

MBR140SFT1G

22 �FCout

+

Cc100 nF

Rc18 K

Cp 68 pF

R31 M

R432.4

560 pFCct

Lpri

Vin 32 to 75 V

Lsec

U1

NCP1032

VCC7

VD

RA

IN8

CL5

VFB3

COMP 4

GN

D1

UV/OV6

CT

2

Cclp

1 nF

MBR1H100SFT3G

Dclp

Rclp18 k

1 nFCuv

− Vout 12.0 V300 mA

T13:1

100 nFCvcc

Figure 50. 48 V to 12.0 V DC−DC Converter Without Auxiliary Winding

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NCP1032

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D1

MURA115 COUT22 �F

Cin1 �F

R3294 k�

RCL40.2 k�

CCT

CC 1.5 nF

CP 100 pF

R178.7 k�

NCP1032

VD

RA

IN

VCC

CL

COMP

VFB

GN

D

CT

UV/OV

VIN VOUT

560 �F100 V

50 mA

R410 k�

R22 k�

RC100 k�

Figure 51. Typical Application Circuit Boost Circuit Configuration

ORDERING INFORMATION

Device OV Protection Marking Package Shipping†

NCP1032AMNTXG Enable 1032A WDFN8 3x3(Pb−Free)

3,000 / Tape & Reel

NCP1032BMNTXG Disable 1032B WDFN8 3x3(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.

Page 21: NCP1032 - Low Power PWM Controller with On-Chip Power Switch

NCP1032

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PACKAGE DIMENSIONS

WDFN8 3x3, 0.65PCASE 511BH

ISSUE O

NOTES:1. DIMENSIONING AND TOLERANCING PER

ASME Y14.5M, 1994.2. CONTROLLING DIMENSION: MILLIMETERS.3. DIMENSION b APPLIES TO PLATED

TERMINAL AND IS MEASURED BETWEEN0.15 AND 0.30 MM FROM TERMINAL TIP.

4. COPLANARITY APPLIES TO THE EXPOSEDPAD AS WELL AS THE TERMINALS.

ÇÇÇÇÇÇÇÇÇÇÇÇ

AD

E

B

C0.10

PIN ONE

2X

REFERENCE

2X

TOP VIEW

SIDE VIEW

BOTTOM VIEW

LD2

E2

C

C0.10

C0.10

C0.08A1

SEATINGPLANE

8X

NOTE 3

b8X

0.10 C

0.05 C

A BB

DIM MIN MAXMILLIMETERS

A 0.70 0.80A1 0.00 0.05

b 0.25 0.35D 3.00 BSCD2 2.20 2.40E 3.00 BSC

E2 1.40 1.60e 0.65 BSC

L 0.20 0.40

1 4

8

*For additional information on our Pb−Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.65PITCH

1.66 3.30

1

DIMENSIONS: MILLIMETERS

0.538X

NOTE 4

0.408X

DETAIL A

A3 0.20 REF

A3

ADETAIL B

L1

DETAIL A

L

ALTERNATECONSTRUCTIONS

ÉÉÉÇÇÇA1

A3

L

ÇÇÇÇÇÇÉÉÉ

DETAIL B

MOLD CMPDEXPOSED Cu

ALTERNATECONSTRUCTIONS

L1 −−− 0.15

OUTLINEPACKAGE

e

RECOMMENDED

K 0.45 REF

5

2.46

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