8/16/2013

© Samsung

New Directions in Memory Architecture

Bob Brennan Senior Vice President

Memory System Architecture Lab Samsung Semiconductor, Inc. bob.brennan@samsung.com

Legal Disclaimer

2

This presentation is intended to provide information concerning memory industry trends. We do our best to make sure that information presented is accurate and fully up-to-date. However, the presentation may be subject to technical inaccuracies, information that is not up-to-date or typographical errors. As a consequence, Samsung does not in any way guarantee the accuracy or completeness of information provided on this presentation. Samsung reserves the right to make improvements, corrections and/or changes to this presentation at any time.

The information in this presentation or accompanying oral statements may include forward-looking statements. These forward-looking statements include all matters that are not historical facts, statements regarding the Samsung Electronics' intentions, beliefs or current expectations concerning, among other things, market prospects, growth, strategies, and the industry in which Samsung operates. By their nature, forward-looking statements involve risks and uncertainties, because they relate to events and depend on circumstances that may or may not occur in the future. Samsung cautions you that forward looking statements are not guarantees of future performance and that the actual developments of Samsung, the market, or industry in which Samsung operates may differ materially from those made or suggested by the forward-looking statements contained in this presentation or in the accompanying oral statements. In addition, even if the information contained herein or the oral statements are shown to be accurate, those developments may not be indicative developments in future periods.

© Samsung

Agenda

» Environment – BW & Capacity growth

» DRAM – BW & Capacity -> Tiering

» Flash –Scales, Becomes Intelligent, Tiers

» STT-MRAM: New “Persistent Performance”

3 © Samsung

Environment: Mobile & Cloud

4

SmartPhone

Tablet

PC

Unit: M Sets

1,600

180 420

320 300 140 200

© Samsung

Environment: Escalating Demand for DRAM and Storage

5

In-Memory Analytics for Big Data Growing x86 Server Virtualization Density

Escalating Memory-Intensive Workloads Data Center Processor Growth

Forecast

VM

s p

er H

ost

VM Density per Host Server

% of Installed Workloads Running in a VM

Source: EMC and IDC

EXABYT

ES

HPC Graphics

Gaming

2x Volume Growth

Source: Gartner and IDC Unstructured Data Structured Data

Source: Intel Big Data

Financial

© Samsung

Environment – Bandwidth Demand

6

13MP FHD (1920x1080)

F-HD

Display

Camera

N-screen

1080p Video

20+MP UD (3840x2160)

UHD 4K . . .

UHD TV

Server: Core Scaling

Linear to Exponential Bandwidth Demand

© Samsung

[Source: “Memory systems for PetaFlop to ExaFlop class machines” by IBM, 2007 & 2010]

GB/s/node Gb/s/pin

Peta-flops 20Peta-flops Exa-flops

400~600Mbps

3.7x (~1.6Gbps)

12.5x (~5.3Gbps)

Now

10~20GB/s

7.5x (~100GB/s)

100x (~1.4TB/s)

2018 Memory Bandwidth Requirements

Mobile: Display/GFX/Camera

Exponential

Bandwidth Demand

Environment – Capacity Demand

7

1GB

2GB

3GB 4GB

[Source: “Memory systems for PetaFlop to ExaFlop class machines” by IBM, 2007 & 2010]

Memory Capacity/System Memory Capacity/Node

Peta-flops 20Peta-flops Exa-flops

100~200TB

>5x (~750TB)

>70x (~10PB)

Now

2~4GB

>4x (~16GB)

>32x (~128GB)

2018 Memory Capacity Requirements

© Samsung

Mobile: Display/GFX/Camera

~Linear Capacity

Demand

Server: Core Scaling

Linear - Exponential Capacity Demand

Agenda

» Environment – BW & Capacity growth

» DRAM – BW & Capacity -> Tiering

» Flash –Scales, Gets Intelligent, Tiers

» STT-MRAM: New “Persistent Performance”

8 © Samsung

The “Trade-off Triangles”

9

Bandwidth

Latency

Power

Capacity

IOPs

Endurance

Power

Capacity

DRAM Non-Volatile

© Samsung

DRAM: Bandwidth Scaling

10

Bandwidth

Latency

Power

Capacity

[Mbps]

1333 1600 1866 2133

2400/2667

3200

Multi-Drop Bus Challenge:

Higher BW, Lower VDD

3600

4200

DDR5 (?) & New I/F (?) DDR4

2011 2015 2018 [Year]

Subject to cost/energy efficiency, scaling, …

New Solution Needed ! © Samsung

DDR Wall?

Optical (?)

DRAM: Capacity Scaling

11

More & More Difficult: Disruptive Solution Needed

Bandwidth

Latency

Power

Capacity

© Samsung

2005 2000 2010 2015

Tech

nol

ogy

Nod

e (n

m) Performance

Retention Time

Power

Density

Bandwidth ?

DRAM: Latency Challenge

12

[tRC, ns]

10

20

[Year]

60

2005 2015

Subject to cost/energy efficiency, scaling, …

More & More Difficult: Disruptive Solution Needed

Bandwidth

Latency

Power

Capacity

© Samsung

30

40

50

2010 2020

~Constant Low Latency Needed

DRAM: “Go Wide” for Bandwidth

13 Good BW & Latency – Still Need Capacity

ITEM Mobile WIO2 HBM (High B/W Memory)

DRAM Base die + DRAM

Bottom die N/A Buffering & Signal re-routing

BW (GB/s) 25.6~51.2 128~256

Pin Speed 0.4~0.8 Gbps 1~2 Gbps

# I/O 512 1,024

#Bump Logic 1~2K 6K~8K

DRAM 1~2K ~3K

Cube (GB) 1 / 2 1 / 2 / 4

# TSV stack 1 / 2 / 4 1 / 2 / 4

DRAM density 8Gb 8Gb

Application

GFX card ○ ○

ULT ○ -

HPC - ○

Server - ○(Cache)

Mobile ○ -

WIO2

AP PKG PCB

Si Interposer GPU

HBM

Base

Bandwidth

Latency

Power

Capacity

© Samsung

DRAM: New Hierarchy Needed

14

Mobile

Server

New Memory

Controller

CPU

SOC

WIO

WIO

WIO

High BW DRAM

LP4

LP4

LP4

LP4

CPU CPU CPUs

New

New

DDR

DDR

New Memory Controller

CPU CPU CPU

High Bandwidth Tier

High Capacity Tier

Bandwidth

Latency

Power

Capacity

“Wide” BW + Tiered Capacity © Samsung

1st Step: Tiering DRAM

15

DDR

DDR

High Bandwidth Tier

High Capacity Tier

DRAM DRAM DRAM

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

© Samsung

Agenda

» Environment – BW & Capacity growth

» DRAM – BW & Capacity -> Tiering

» Flash –Scales, Becomes Intelligent, Tiers

» STT-MRAM: New “Persistent Performance”

16 © Samsung

Flash

17

IOPs

Endurance

Power

Capacity

© Samsung

Flash: Capacity Scaling

18

120nm 1Gb

70nm 4Gb 90nm 2Gb

60nm 8Gb

1ynm 128Gb

40nm 32Gb

50nm 16Gb

Scaling Becomes Difficult – Need a New Solution

IOPs

Endurance

Power

Capacity

© Samsung

Flash: Endurance

19

IOPs

Endurance

Power

Capacity

NAND Flash Endurance

10K

100K

2004 2008 2012

100K 50K ~100K

10K

5K 3K

1.5K

2016

MLC Endurance

SLC Endurance Shrink Rate Slows Down

Reliability Degrades

Performance Deteriorates

Years

SSD Requirement

Increasing Intelligence & Sophistication

Adaptive Algorithms on Controllers / Accelerators, Tuned for Process

Application & Usage Awareness

© Samsung

Flash: Performance

20

ms

0

2000

4000

6000

8000

10000

12000

0

2

4

6

8

10

12

14

16

7.2K RPM 15K RPM SSD

Rotational Latency AVG Seek IOPS

<0.3ms

Latency & IOPS

2004 2006 2008 2010 2012 2014 2016

0 500

1000 1500 2000 2500 3000 3500 4000 4500 5000

2005 2008 2011 2014

HDD

SAS

SATA

MB/s PCIe x4

Interface & Performance

>100x

Interface Unlocks Bandwidth: PCIeG2->G3->G4

Solution needs to scale: Controllers, Algorithms, & Flash Organization

Increasing Intelligence & Sophistication

IOPs

Endurance

Power

Capacity

© Samsung

Flash: Inherent Intelligence

21

IOPs

Endurance

Power

Capacity

Intelligent IOPs

Intelligent Endurance 3D Scaling

© Samsung

2nd Step: Tiering Flash/HDDs

22

DDR

DDR

High Bandwidth Tier

High Capacity Tier

DRAM DRAM DRAM

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

HDD

DDR

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

Intelligent Flash Tier

HDD

HDD

HDD HDD HDD HDD HDD

© Samsung

Agenda

» Environment – BW & Capacity growth

» DRAM – BW & Capacity -> Tiering

» Flash –Scales, Becomes Intelligent, Tiers

» STT-MRAM: New “Persistent Performance”

23 © Samsung

Opportunity for New Technology

24

40 60 20 Bandwidth (GB/s)

1

10

100

1,000

10,000

100,000

1,000,000

10,000,000

Late

ncy

(ns)

Persistent Performance

HDD

Flash

DRAM

LLC

© Samsung

STT-MRAM

25

Outer Better

Retention

Tech. Maturity

Speed (RD/WT)

Standby Power

Endurance Bit cost

(Scalability)

DRAM

STT-MRAM

STT-MRAM Cell Structure

Promising Technology, Not Mature Yet

© Samsung

3rd Step: New possibilities

26

DDR

DDR

High Bandwidth Tier

High Capacity Tier

DRAM DRAM DRAM

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

DDR

HDD

DDR

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

Intelligent Flash Tier

HDD

HDD

HDD HDD HDD

NEW

NEW

NEW

NEW

NEW

NEW

NEW

NEW

Persistent Performance Tier

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

FLASH

Intelligent Flash Tier

HDD HDD

Higher Bandwidth Tier

DRAM DRAM DRAM

NEW

NEW

NEW

© Samsung

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