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New era for Materials Technology in Korea
PRICM-8
Waikoloa, Hawaii
August 5, 2013
Dr. Dongwha Kum
Acting Vice President, NAEK
Endowed Chair Researcher, KIST
QUIET & CONTINUOUS improvement in PROPERTIES & COST of conventional materials
Revolution in Materials Technology
PRICM-3(1998)
cost down of ~2,5% per year
3.5~7% productivity increase per year
significant improvement in performance (e.g.
Si 10,000X)
~ 50% decrease in employment
dramatic improvement in working environment
Prof. Thomas Eagar
~ 2.5% new businesses per year in advanced materials
Contents
Introduction
Matured New Materials
Challenge Forwards
Summary & Conclusion
11
22
33
44
Korea at a glance
Land ( ) 99,600
(109th)
Population (million) 49,410
(25th)
GDP (US$, trillion) 1.014 (12th)
GDP per person (US$) 20,759 (29th)
Trade volume (US$, trillion) 1.036 (9th)
KOSPI Total(US$, trillion) 1.010(2012)
Economic Profile(2011)
Scientific papers per1M population during 1990~2001
Korea at glance
R/D Budget(B USD) 450.2(6th) R/D Personnel(FTE) 288.901(6th)
- Public : Private(%) 26.3 : 73.7 Scientific Papers, SCI 44,718(11th)
R/D Budget/GDP 4.03%(2nd) US Patents 12,126(4th)
Science & Technology(2012)
1. Crude Oil
Top 10 Imports (2012)
2. Semiconductors
3. Natural Gas
4. Petrochemical Products
5. Coal
10. Fine Chemicals
6. Steel Plates
9. Fabrication Equipment
8. Computers
7. Iron Ore
Imports$519.6B
Ref: Korea Customs Service
1. Oil & Petrochemical Products
Top 10 Exports (2012)
2.Semiconductors
3. Automobiles
4. Ships & Marine Structures
5. Flat Panel Display & Sensors
6. Automobile Parts
7. Wireless telecommunication
equipment
10. Electronic Goods& Devices
9. Plastics
8. Iron & Steel Products
Exports$547.9B
Ref: Korea Customs Service
Major Industry (2010)
32.4%35%49.3%59%
SamsungHynix
Memory Chip 1st Ship Building 1st 선
30.2%47%
TFT-LCD 1st
Mobile Phone 1st
25.3%30% 3.9%4.2%
Steel 5th Automobile 5th
5.5%5.5%30.2%5.5%
Petrochemicals 5th–
Hyundai STX
SamsungLG
POSCOHyundai
HyundaiKIA, GM Daewoo
SamsungLG, KT
GS CaltexLC
Materials Technology of Korea
Production : 200B USD(18.5% of manufactur-
ing)
Employee : 350,779(13.3% of manufacturing)
Exports : 91.6B USD
Imports : 71.4B USD
* mostly high-tech materials
Materials Industry Profile(2011)
Ref:: kims.re.kr
Materials Technology of Korea
R/D Activity(2011)
R/D Budget(M USD)*
510
Public : Private(%) 40 : 60
R/D Personnel(FTE) 19,259
Scientific Papers, SCI 4,358(4th)
US Patents 259(4th)* 8.7% of total manufacturing
Ref: kims.re.kr
Ethylene Production(2012) : 8.4MT 4th largest in the world 4th largest industry in Korea
Polymer Industry in Korea
Ref: KPA
Foreign Dependence : LCD Story
Cross cut view of LCD
Key Materials for LCD Foreign Dependence Supplyer
Liquid Crystal 100% Meck, Chissco
Alignment Layer Film 100% Nissan, JSP, Chissco
Polarizer Film 100% Nitto Denko
Color Filter 77% JSR, Tokyo Ink, Sumitomo
Photoresist 73% AZEM, TOK. Zeon
Black Matrix 74% TOK, MCSC
Photo Spacer 71% JSR
Over Coat 62% JSR, Chissco
Foreign Dependence : LCD Story
solar cells 82% , secondary Li battery 53%
Key materials from foreign suppliers occupy 55% production cost of LCD in Korea.
Ref: Displaybank
Ou
tpu
t
Time
Market
Market Pull
Laboratory
Technology Push
Valley of Death
Challenge for New Materials
Government effort to improve MCT
20012001 2002 ~ 20112002 ~ 2011 2012 ~ 20202012 ~ 2020
Strengthen ecosystem of materials industry
Basic plan for MCT
Special Act for MCT Promotion
MCT 2010
1.3B USD Proactive R/D Reliability Centers
MCT 2020
Extend the MCT2010
Multi- disciplinary R/D All Value chain
Improved trade balance
Samsung (May, 13, 2013)
Samsung Future Technology Foundation - Selected Materials technology aimed for new industry - Support material design to pilot demonstration
Hyundai Motors (April 29, 2913)
Advanced Materials Initiative for automobile parts and applications
LG Electronics (July 10, 2013)
Vehicle Components R/D Center(Incheon) for green automobile parts and devices
News 1
“R/D personnel increases fast at major companies”Chosun.com , July 3, 2013.
News 2
Ref: Chosun Daily
Contents
Introduction
Matured New Materials
Challenge Forwards
Summary & Conclusion
11
22
33
44
Issues in Materials Community
Conventional Materials - continuous innovation in manufacturing processes
- challenge to new materials and technologies
Matured New Materials - high demand for improved and advanced materials
- cooperative efforts to overcome death valley
Nano-Materials - strong emphasis on potential applications
- cultivate new business with collective efforts
Emerging New Materials - more proactive in emerging fields
Prod.(M tpy)
30
20
10
1980 1990 20001970 2010
’73 1st Phase Constr. at Pohang Completed(1.03M tpy)’68
Est.
’83 Pohang SteelworksConst. Completed (9.1M tpy)
’92 Gwangyang Steelworks Const. Completed (20.8 M tpy)
’94 Listed on the NYSE(1st Korean Company)
’00 Privatization
37 M tpy (6th)
The most competitive steel company
Steel Success StrategyJune, 2013, NY
Steels : POSCO
Ref: wsd.com
New Process : POIST
POSCO-Saarstatl-BOP
Compact Endless Casting – Rolling Mill
FINEX Process
Low-grade raw materialsEco-friendly processLow construction cost
Athermal converter
Seamless process
Ref: OJ Kwon, POSCO
TWIP steel for AutomobileBumper Beam, HydroformingFIAT New Panda(201)
New Plate Steels: Fe-Mn Alloy
« ferriteaustenite
• non-magnetic• twin defects• strong & low-T toughness• Good absorption of vibration
Fe-3~27%Mn Alloys
Ref: OJ Kwon, POSCO
Portable Devices Electric Vehicle
Capacity < 10 Wh 40 kWh
Energy density 150 Wh/kg 300 Wh/kg
Power density 150 W/kg 600 W/kg
Cycle life 500 5,000
Safety -10 to 60 °C Up to 200 °C
Cost $1000/kWh $300/kWh
Cell Chemistry (+)LiCoO2 / C(-) (+)LiNixCoyMnzO2 / C(-)
(+) Cathode LiCoO2 ↔ Li1-xCoO2 + xLi + xe-
(−) Anode Cn + xLi + xe- ↔ CnLix
LiCoO2 + Cn ↔ Li1-xCoO2 + CnLix
Battery Needs for EV
Ceramic Layer
Ceramic Layer
PO Separa-tor
Secondary Li Battery : LG Chem
PO Separator Polymer membrane Solvent : EC/DMC/EMC Electrolyte : Li4PF6
Ceramic layers prevent shrinkageless than 10%
LiMn2O4
Ref: LG Chem
Scale down of Semiconductor Memory
50nm50nm
40nm
30nm
20nm
10nm
2008 2009 2010 2011 2012 2013 2014
DRAM
NAND
source: SK Hynix
Tech
no
log
y n
od
e
DRAM Cell Capacitor
Technology node
oxide
70nm 50nm60nm 30nm40nm 20nm
100
80
40
60
20
Toxide
9Å8Å
7Å
5Å
11Å
Asp
ect ratio o
f storag
e no
de
Ref: SJ Hong, SK Hynix
Dielectric Materials for DRAM
Ref: DS Kil, SK Hynix
Future of Semiconductor Memory
?50nm50nm
40nm
30nm
20nm
10nm
2008 2009 2010 2011 2012 2013 2014
DRAM
NAND Cell design : 4F2, : 2F2, 3D
New materials/processes: high k, pattern
Efficiency & stacking: multi-bit, 3DIC TSV
NVM: PRAM, FeRAM, STT-RAM
Ref: SK Hynix
Tech
no
log
y n
od
e
16Gb Memory: eight 2Gb NAND flashes w/ TSV connection
High Density High Speed Less Power Less Noise Lower Profile Smaller Form Factor
Packaging : 3D IC TSV
3D DRAM dies w/ TSV connection
Ref: i-micronews.com
TSV: Trough Silicon Via
Progress of LED Materials
White LED150lm/W
Rhombohedral : Rc a = 4.757A
c = 12.983A M.P. = 2,050oC
TEC a =7.5x10-6K -1
c = 8.5x10-6K -1
Basal slip : (0001)<110>Prism slip: (110)<100>Pyramidal slip: (101)<101>
Etch pit density according to growing direction Other defects: bubbles, GB. lineages
a-axis c-axis
Sapphire(α-Al2O3)
Ref: Sapphire Technology
VHGF : Vertical Horizontal Gradient Freezing
growing cycle total charge production electricity
-37% -28% -42%
+43%
VHGF Growth of Sapphire
a-axis
c-axis
Ref: Sapphire Technology
Growth axis
Growth Method
EPD FWHM Manufacturer
A-axis
VHGF ≤3x102/cm2 < 9arcsec Sapphire Technology
Kyropoulos ≤10x102/cm2 ~ 12arcsec Rubicon, Monocrystal
EFG ≤105~6/cm2 > 20arcsec Namiki
C-axis Czochralski ≤103~4/cm2 > 12arcsec Kyocera
Quality of VHGF Sapphire
XRD (0006) rocking curve of 6” sapphire crystal
CL(MonoCL4+) Imageof (002)GaN on sapphire
σ = 1.97 ±0.28 x 10+8/cm2
FWHM = 214.4 ± 5.9 arcsec
Ref: Sapphire Technology
ETL
Substrate(Glass, plastics, metal foil)
ITO
HIL
HTL
Cathode
EML
EIL-
+
Exciton
low work function metals; Li, Ca, Mg - mixed layer structure - insulator/metal design
Metal-organic complex; Alq3, Gaq3
Amine type materials w/ high hole mobility
Amine type materials; CuPc - good contact w/ anode - smoothing effect on ITO
Flexible display; Polyimide - colorless, low TEC, low-k, high modulus
Emitting materials
DPVBi Alq3
NO
NON
O Al
NO
NC CN
Ir(ppy)3 DCJTB
Ir
N
N
N
AMOLED : Materials Issues
Introduction
Matured New Materials
Challenge Forwards
Summary & Conclusion
11
22
33
44
Activity Summary
Overcome the valley of death and accelerate market evo-
lution of new materials.
Maturing advanced materials through integrated efforts
among all actors in the value chain.
Increase basic research to continue accumulation of
knowledge stock with competent IP policy.
Active use of IT-based research tools (i.e., computational
materials, materials informatics)
Biomaterials for Orthopedic Applications: Mg
Mg-Ca-X
Mg-Ca
Mg
Ti
Immersion time [hr]0 10 20 30 40 50 60
H2
evol
utio
n [m
l/cm
2 ]
0.00
0.50
1.00
1.50
2.00
5% Ca
10% Ca
Pure
Mg-Ca (2.5hrs.)
Mg-Ca-X(298hrs.)
Mg-Mg2Ca Eutectic
CT Imageafter 6months
Ref: HK Seok, KIST
Den
sity
NAND Flash
NOR Flash
FeRAM
Process Speed
MRAM
DRAM
STTMRAM
PRAM
SRAM
Non Volatile Memory
Die
lect
ric
Die
lect
ricTime
Opt
ical
Pul
se Sub
stra
te
refl
ecct
ive
Electrical Memory (PRAM)
2
Electrode
Chalcogenide
conductive
Dielectric
conductive
Time
Ele
ctric
al P
ulse
Tm
Tc
Time
Tem
per
atu
re
Write(Reset) Erase(Set)
Read(Sense) “0” “1”
Optical Memory
PRAM
Ref: BK Chung, KIST
10
20
30
40
50
020100 30 40 50
Sb2Te3
GeTe
Ge2Sb2T
e5 ; ~50ns
Ge1Sb2T
e4 ; ~40ns
Ge1Sb4T
e7
; ~30ns
200ns30ns
100ns
50ns
70ns
Ge
Te Sb
Ge (at%)
Sb (at%)
60
70
80
90
60 70 80 90
Ge-doped SbTe
Commercial PCM: Ge2Sb2Te5
Ge-Sb-Te phase diagram
BEC
PCM
TE
7.5nm
17nm
BEC
PCM
TE
BEC
PCM
TE
7.5nm
17nm
Dash-type cell for high performance PRAM (SEC, 2010 VLSI)
DRAM-like performances with high scalability
Prototype PRAM
Prototype PRAM
Ref: BK Chung, KIST
MRAM
STT-MRAM
Select Half-select
Transistor OFFTransistor OFF
Transistor OFFTransistor OFF
Transistor
ON
Transistor
ON
Transistor
ON
Transistor
ON
Perfect selectivity
Data: Spin Up vs. Down
STT-RAM
-100 0 100500
1000
1500
Re
sist
an
ce (
)
Magnetic field (Oe)
‘0’
‘1’
-1.0 -0.5 0.0 0.5 1.0500
1000
1500
Res
ista
nce
()
Voltage (V)
‘1’
‘0’
Ref: JY Chang, KIST
n
Vbias
pInSb
A
In In
high (“1”) current ≡ avalanche state
low(“0”) current
Two current states: High & Low
curr
ent
(mA
)
Vbias
100
50
11.1311.0
B B
B B
R1
R2
Magnetic Controlled Logic Device
Ref: JY Chang, KIST
2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012
Nanotechnology Development Promotion Act
Korea Nanotechnology Initiative II
Nanotechnology Research Association
Nanotechnology Information Support System
Korea Nanotechnology Research Society
National NanoFab Center
Korea Advanced NanoFab Center
Nanotechnology Roadmap
National Nanotechnology Policy Center
Nano-Convergence2020 Program
Korea Nanotechnology Initiative I
Korea Nanotechnology Initiative III
Nanocluster Centers
Nanotechnology in Korea
Ref: Korea Nanotechnology Annual 2012
Dominant
Niche
Ivory Tower
Minor League
U.S.
Japan
Germany
Korea
Taiwan
Israel
Sweden
Singapore
Switzerland
Australia
Russia
France
ChinaU.K.
Netherlands
Italy
India
Brazil
2007 2008 2009
Technology Development Strength
Nan
ote
ch A
ctiv
ity
1 3 51
3
5
Canada
Ref: Lux Research (2010)
World Picture of Nanotechnology
2
4
2 4
Nano Convergence 2020 Program
Heat spreaders for high power LED lamps
Air purification for indoor applications
Ceramic inks for printed porcelains
High-yield light extraction, OLED
Thermal insulation & smart films
Sensor kits for illegal light oil
source: JK Park, Nano Convergence Foundation
Metals CNT (C) Graphene (G)
Physics Mechanics Quantum Mechanics Quantum Mechanics
Electrical Resistivity (Ω cm) 1.6 x10 -6(Au) 1.6 x10-6 1.0 x10-6 (Au)
Mobility (Cm2/Vs) ~ 10,000 8,000(CVD)
Thermal Conductivity (W/mK)
380(Cu) 3,00 ~ 3,500 5,300
Heat Conductivity (W/m-K) 11~12 3500 5300
Surface Area (m2/g) ~ ~1,500 ~2,630
Young’s Modulus (GPa) 220(Steel) 1,000 ~ 2,000 ~1,000
Tensile Strength (GPa) <2(Steel) 30 ~ 180 ~130
Failure Strain (%) ~ > 11 > 18
Price ($/m2)50 (ITO)
≈ 70N/A
Graphene
Physical Characteristics of Graphene
cost competitive to CNT
easy dispersion as additives in composites
layered structure with high-barrier characteristics
thickness : 0.34 ~ 10 nm length/width : 0.3 ~ 100 micron
Industrial strength graphene sheets : - pilot plant for large area (Samsung Techwin, 2012) graphene nanoplatelets : - 300ton/year (SSCP, 2013) - 1kg/day (Enbarotech, 2013) - 200ton/year (POSCO/HWC w/ XG Science, 2014)
Application
Basic
Graphene in Korea
Academic strength Scientific papers US patents
Ref: Korea Nanotechnology Annual 2011
SC backsheetBarriers againstwater, oxidationHeat & vac. shield
EMI PaintPrinting Ink
Home appliancesAutomobileBuilding
FlexibleTouch panel
Flexible &TransparentElectrode
EMI Shield
HighBarrier
Materials
OLED
Touch Panel
Coating
GrapheneSheets
+Nano
platelets
Main Thrust Area
Graphene Initiative(2013)
source: SH Hong, MKE
Computational Materials Science
Combinatorial Experiment
In-situ Multiple Analysis
Materials Informatics
Creative
Materials
Discovery
Energy Materials Designed by Quantum Alchemy
Structural and Environmental Materials of Extreme Properties
IT Materials to Overcome the Scaling Limit
Materials for Augmented Sensing
Creative Materials Discovery Program
Source : MEST(on discussion)
Summary & Conclusion
Materials technology has made remarkable progress through continuous evolution in Korea.
Innovation in materials and processing technology makes the bread-earning industries competitive.
Translational R/D to bridge the valley of death is strongly emphasized.
Group efforts covering all value chains is strongly asked in Government R/D of key materials and components.
Coordination of inter- & multi-disciplinary corperation becomes more important in newly converging fields (IT+NT+BT).
Suggestion
PRICM Innovation Forum - on specific public issues - produce tangible outcomes - possibly young scientist program